Oxygen permeability of surfactant/polymer composite films with multibilayer and inverted hexagonal structure

The permeability of oxygen through horizontally oriented multibilayer films of polyion complexes prepared from quaternary ammonium-type surfactants [CH₃(CH₂)_n-1]₂N⁺(CH₃)₂Br^?(n = 14, 16, 18), and poly(p-styrenesulfonate) or poly[2-(acrylamido)-2-methyl-1-propanesulfonate], was measured in water using an oxygen electrode. The permeability depended mainly on the phase of the multibilayers. Thus, it increased abruptly (about 10-fold) near each phase transition temperature because of the fluidity enhancement of the multibilayer. Inverted hexagonal type nonbilayer films prepared from the polyion complexes and cholesterol had greater permeability (2–20-fold) than the multibilayer films in both phases. The large permeability of the nonbilayer films was attributed to the lack of a barrier such as the bilayer and lower crystallinity of the films. It was associated neither with an increase in thermal movement of the lipid surfactant molecules nor with an increase in the water content of the films by the addition of cholesterol. © 1993 John Wiley & Sons, Inc.     

Synthesis,characterization and catalytic properties of trivalent iron substituted hexagonal mesoporous aluminophosphates

Trivalent iron substituted hexagonal mesoporous aluminophosphate molecular sieve has been synthesized and characterized for the first time, which showed excellent catalytic activity and reusability for the cyclohexane oxidation reaction under mild conditions.     

Vacuum annealing phenomena in ultrathin TiD y /Pd bi-layer films evaporated on Si(100) as studied by TEM and XPS

Using a combination of TEM and XPS, we made an analysis of the complex high-temperature annealing effect on ultrathin titanium deuteride (TiD _y ) films evaporated on a Si(100) substrate and covered by an ultrathin palladium layer. Both the preparation and annealing of the TiD _y /Pd bi-layer films were performed in situ under UHV conditions. It was found that the surface and bulk morphology of the bi-layer film as well as that of the Si substrate material undergo a microstructural and chemical conversion after annealing and annealing-induced deuterium evolution from the TiD _y phase. Energy-filtered TEM (EFTEM) mapping of cross-section images and argon ion sputter depth profiling XPS analysis revealed both a broad intermixing between the Ti and Pd layers and an extensive inter-diffusion of Si from the substrate into the film bulk area. Segregation of Ti at the Pd top layer surface was found to occur by means of angle-resolved XPS (ARXPS) and the EFTEM analyses. Selected area diffraction (SAD) and XPS provided evidence for the formation of a new PdTi₂ bimetallic phase within the top region of the annealed film. Moreover, these techniques allowed to detect the initial stages of TiSi phase formation within the film–substrate interlayer.     

IR laser ablative degradation of poly(phenylene ether-sulfone): Deposition of films containing ether, sulfone, sulfoxide and sulfide groups

Pulsed infrared laser-induced ablation of poly(1,4-phenylene ether-sulfone) (PES) results in the extrusion of SO₂, CO and hydrocarbon molecules and allows deposition of dark solid paramagnetic carbonaceous films that were analysed by FTIR, UV, XP, Raman and EPR spectroscopy and by electron microscopy and revealed as poor in S and containing CO, SO₂, -SO- and C-S-C units. The films show pronounced conjugation of sp²-C atoms and their EPR spectra are sensitive function of the presence of molecular oxygen. The laser process differs from the conventional pyrolysis of PES which yields SO₂ and phenol as major volatile products and a carbonaceous char.     

Si/C Phases from the IR Laser-induced Decomposition of Silacyclobutane and 1,3-Disilacyclobutane

CO₂ laser-induced infrared multiphoton decomposition (IRMPD) and SF₆ photosensitized decomposition (LPD) of silacyclobutane (SCB) and 1,3-disilacyclobutane (DSCB) in the gas phase results in the very efficient deposition of Si/C/H and SiC materials, and it is inferred that the process is dominated by formation of transient silene; silene rearrangement to methylsilylene; silene and methylsilylene dehydrogenation; and polymerization of SiCH_n (n < 4) species. The deposits are sensitive to oxygen. Decomposition and SiC formation are favoured with IRMPD experiments conducted with high-energy fluxes. The laser technique is promising for low-temperature chemical vapour deposition of amorphous SiC.     

Investigation of structure, stability, phase composition and magnetic ordering in ultrathin iron/nickel films

By thermal and chemical treatment of Langmuir-Blodgett (LB) films, oxidic and metallic Fe and Ni layers can be prepared. The films are characterised, where differences e.g. in the lateral homogeneity are found. The metallic Fe containing samples show a higher corrosion stability as compared with films prepared by other coating techniques. Mixed Fe/Ni oxidic and metallic layers, respectively, are prepared, where the Ni concentration in the oxidic films can be determined as a function of the ratio of initially transferred numbers of LB layers. The phase composition of the metallic Fe changes systematically with the Ni concentration.In partial fulfilment of his thesis     

Growth,characterization and interfacial reaction of magnetron sputtered Pt/CeO2 thin films on Si and Si3N4 substrates

Growth of magnetron sputtered Pt/CeO₂ thin films on Si and Si₃N₄ were characterized by X‐ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and X‐ray photoelectron spectroscopy (XPS). Interaction of Pt/CeO₂ films with Si on Si and Si₃N₄ substrates was extensively investigated by XPS. XRD studies show that films are oriented preferentially to (200) direction of CeO₂. XPS results show that Pt is mainly present in +2 oxidation state in Pt/CeO₂/Si film, whereas Pt⁴⁺ predominates in Pt/CeO₂/Si₃N₄ film. Concentration of Pt⁴⁺ species is more than four times on Si₃N₄ substrate as compared with that on Si. Ce is present as both +4 and +3 oxidation states in Pt/CeO₂ films deposited on Si and Si₃N₄ substrates, but concentration of Ce³⁺ species is more in Pt/CeO₂/Si film. Interfacial reaction between CeO₂ and Si substrate is controlled in the presence of Pt. Pt/Ce concentration ratio decreases in Pt/CeO₂/Si₃N₄ film upon successive sputtering, whereas this ratio decreases initially and then increases in Pt/CeO₂/Si film. Copyright © 2015 John Wiley & Sons, Ltd.     

IR laser ablative decomposition and depolymerisation/repolymerisation of poly(ethylene succinate)

Pulsed IR laser ablation of poly(ethylene succinate) results in the formation of volatile products (mainly carbon oxides, hydrogen, C₁-C₄ hydrocarbons) and affords deposition of polymeric films. Composition, structure and molecular weight distribution of the latter products were examined by EDX-SEM, FTIR, UV and NMR spectroscopy and gel permeation chromatography and revealed to be virtually identical to the initial poly(ethylene succinate). The deposited films and poly(ethylene succinate) decompose in the same way, as proved by TGA analysis. The formation of the volatile products is accounted for by random cleavages of the polymer backbone. The deposition of the polymeric products is judged to be due to molecular ester group interchange and/or a sequence of the C-C bond homolysis and recombination of the produced radicals.     

Electrochemically deposited ZnO films: an XPS study on the evolution of their surface hydroxide and defect composition upon thermal annealing

Electrodeposition from ZnCl₂ aqueous solution was performed to grow ZnO thin films on the surface of polycrystalline copper plates. Electrochemical parameters for deposition were optimized by means of cyclic voltammetry (CV). The morphology of the deposits was studied via scanning electron microscopy (SEM), and their chemical composition was ascertained by means of X-ray photoelectron spectroscopy (XPS). The effects of changing the deposition bath temperature (T _bath) and the role played by post-deposition treatments, such as temperature and time of annealing in air, were studied. SEM images of freshly deposited vs. annealed samples have shown that in the former case the films display a rough morphology with mixed grain/hexagonal platelets structures and in the latter smaller but more uniformly dispersed cubic grains. T _bath is found to be the key parameter to induce the different morphology in the deposited films, which reflects in a different chemical reactivity of surface species, as found on the basis of the binding energies and relative quantitative ratios between Zn 2p and O 1s peaks. In fact, a higher T _bath favours a more efficient desorption of OH groups upon annealing, the O 1s peak resulting to much more drastically modified oxide/hydroxide intensity ratio with respect to the case of the sample deposited at lower T _bath.     

Matrix IR spectra of new organic silanones, (MeO)2Si=O and Ph2Si=O

Translated from Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, No. 9, pp. 2187–2188, September, 1988.     

Pentamethyldisilylmethyl and related complexes of iron involving skeletal rearrangements,FeCSiSi → FeSiCSi

For the new complex Me₃ SiMe₂ SiCH₂ Fe(CO)₂Cp the metalcarbon bond undergoes normal insertion reactions;however, under certain conditions the SiSiCFe framework rearranges to the siliconiron bonded system SiC SiFe.     

Comparison of the annealing behavior of thin Ta films deposited onto Si and SiO<Subscript>2</Subscript> substrates

Structural changes at annealing temperatures (T_an) of 500–1,100°C were investigated for thin Ta films which were sputter-deposited onto pure Si substrates and onto thermally oxidized Si. In the as-deposited state, the Ta layers predominantly consist of metastable tetragonal -Ta, whereby the [001] texture is independent of the substrate material. At lower annealing temperatures, the microstructural evolution is essentially the same for both Ta films. Incorporation of O atoms causes an increase of the intrinsic compressive stress, and diffusion of C atoms into the Ta layer leads to the formation of Ta₂C. Additionally, a partial transformation of the original -Ta phase into a second phase with tetragonal unit cell (denoted as -Ta) occurs. For the Ta/Si system, the formation of a Ta–Si intermixing layer is initiated at T_an=550°C, and nucleation of crystalline TaSi₂ occurs at T_an=620°C. The formation of a second Ta silicide was not detected up to T_an=900°C. In the case of the Ta film deposited onto the SiO₂ substrate, the metastable -Ta and the -Ta transform completely into the thermodynamically stable cubic -Ta at T_an=750°C. A marked reaction with the substrate indicated by the formation of Ta₂O₅ and Ta₅Si₃ occurs at T_an=1,000°C.     

Thermal- and UV-induced cis/trans isomerization of undoped polyacetylene films. An ESR and IR investigation

The UV- and thermal-induced cis→trans isomerization of undoped polyacetylene (PA) films has been investigated. The results have shown that temperature and UV light promote the isomerization of PA with a similar mechanism. We suggest that the formation of paramagnetic defects in trans PA takes place by bond rehybridization, in agreement with previous hypotheses, and that both spin concentration and spin delocalization depend on the temperature of isomerization. It was found that under UV irradiation thermal cis→trans isomerization of polyacetylene also takes place at temperatures at which the sole thermal treatment isomerization is much lower or nil, and we suggest that the possibility of preparing trans PA under relatively mild conditions may lead to a better material.     

Investigation of silyl-substituted alkylthioacetates by IR and UV spectroscopy,1H and29Si NMR,and mass spectrometry

Conclusions The IR, UV, NMR, and mass spectra of silyl-substituted alkylthioacetates have been investigated. Intramolecular coordination of the carbonyl group with the silicon atom has been shown to exist in molecules of trifluoroaeetylthiomethylsilane in the condensed state and in a polar solvent (acetonitrile).Translated from Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, No. 10, pp. 2224–2228, October, 1985.     

Interaction of Na, Mg, Al, Si with carbon nanotube (CNT): NMR and IR study

A Quantum Mechanics (QM) is used for investigated the nature of metals transport and interaction with single-walled carbon nanotubes (SWCNTs) inter membranes. Metal species can be transported actively by a combination of SWCNT-membranes conducting channels that have been used for bio-molecular and detection. This study is based on the interaction of Na, Mg, Al, and Si with the structural features of SWCNTs in the ground state ab initio, HF theory and DFT calculation have been performed with the program Gaussian A7 package suite of programs. We used HF and DFT (B3LYP) method for calculation energy, chemical shift nucleus magnetic resonance and proportion thermodynamic by DFT-IR and DFT-NMR for RWCNT in absence and presence metals. The basis set used 6-31G and 6-31G* that increasing electronegativity metals increased the total energy. The proportion SWCNTs were changed by them. In this study presented a comprehensive on effects of metals on SWCNTs, which are on theirs electronic structure, and transfer of charge from metal to SWCNTs. The results are presented for T = 310 K, the temperature of human’s body.     

Influence of thermal annealing on the microstructure,hardness and corrosion behavior of TiAlSiCuN nanocomposite films

Nanocomposite TiAlSiCuN films were deposited on high speed steels by filtered magnetic arc ion plating. Detailed properties of the films annealed at various temperatures are studied. After thermal annealing at different temperatures ranging from 400 to 800 °C, changes in the film micro‐structure, chemical and phase composition, surface morphology, hardness and polarization curve properties were systematically characterized by X‐ray diffraction, X‐ray photoelectron spectroscopy, scanning electron microscopy, nano‐indenter and electrochemical workstation, respectively. It was found that the TiAlSiCuN films could be fully oxidized at 800 °C, Al and Ti atoms all diffused outwards and formed dense protective Al₂O₃ and TiO₂ layer. Simultaneously, the TiAlN phase gradually disappeared. The films annealed at 400 °C obtained the highest hardness because of the certain grain growth and little generated oxides. Besides, the certain formation of dense protective Al₂O₃ layer made the TiAlSiCuN film annealed at 600 °C present the least corrosion current density and the corrosion voltage. Copyright © 2016 John Wiley & Sons, Ltd.     

Electronic and crystalline structure of Si/SiO2 interface modified by ArF excimer laser

The native oxide layers on Si(100) surface were irradiated under UHV conditions by an ArF excimer laser pulses with energy density varied between melting and evaporating thresholds. The resulting changes were studied by LEED, AES and UPS. The increase of the energy density up to evaporation threshold results in the recrystallisation of native oxide layer. The pulses with energy densities just above the evaporation threshold ablate the top layer leaving an ordered and atomicaly clean surface. The observed (1x1) surface reconstruction is probably stabilised by strains introduced during rapid melting and quenching of the topmost layers. The surface electronic structure is dominated by random satisfaction of dangling bonds swearing a well defined surface states observed on (2x1)Si(100) surface.     

Studies of site selective hydrogen atom abstractions by Cl atoms from isobutane and propane by laser flash photolysis/IR diode laser spectroscopy

The kinetics of chlorine atom abstractions from normal and selectively deuterated propane and isobutane have been measured at room temperature and 195 K using a laser flash photolysis system, and following the course of the reaction via IR diode laser absorption measurements of HCl product. In conjunction with the kinetic measurements, a comparison of the HCl signal heights from pairs of measurements on normal and selectively deuterated systems has allowed the determination of the branching fractions of the reactions at the primary, secondary (propane) and tertiary (isobutane) positions. The kinetic data (all in units of cm(3) molecule(-1) s(-1)) for the reaction of Cl atoms with propane ((1.22 +/- 0.02) x10(-10), 195 K; (1.22 +/- 0.03) x10(-10) 298 K) and isobutane ((1.52 +/- 0.02) x10(-10), 195 K; (1.25 +/- 0.04) x10(-10), 298 K) are generally in good agreement with literature data. No data are available for comparison with our measurements for the reactions of Cl atoms with CH(3)CD(2)CH(3) ((1.02 +/- 0.03) x10(-10), 195 K; (1.09 +/- 0.02) x10(-10), 298 K) or (CH(3))(3)CD ((1.32 +/- 0.03) x10(-10), 195 K; (1.12 +/- 0.04) x10(-10), 298 K). Rate coefficients at 195 K for the reactions of Cl atoms with ethane ((5.04 +/- 0.08) x10(-11) and n-butane ((2.19 +/- 0.03) x10(-10)) were also measured. The branching fractions for abstraction at the primary position increased with temperature for both propane ((40 +/- 3)% at 195 K to (48 +/- 3)% at 298 K) and isobutane ((49 +/- 4)% at 195 K to (62 +/- 5)% at 298 K). The direct measurements from this study are in good agreement with most calculations based on structure activity relationships.     

Interface diffusion and chemical reaction of PZT layer/Si (111) sample during the annealing treatment in air

The interface diffusion and chemical reaction between a PZT (PbZrxTi1-xO3) layer and a Si(111) substrate during the annealing treatment in air have been studied by using XPS (X-Ray Photoelectron Spectroscopy) and AES (Auger Electron Spectroscopy). The results indicate that the Ti element in the PZT precursor reacted with residual carbon and silicon, diffused from the Si substrate, to form TiCx, TiSix species in the PZT layer during the thermal treatment. A great interface diffusion and chemical reaction took place on the interface of PZT Si also. The silicon atoms diffused from silicon substrate onto the surface of PZT layer. The oxygen atoms, which came from air, diffused into silicon substrate also and reacted with Si atoms to form a SiO2 interlayer between the PZT layer and the Si (111) substrate. The thickness of SiO2 interlayer was proportional to the square root of treatment time. The formation of the SiO2 interlayer was governed by the diffusion of oxygen in the PZT layer at low annealing tempera     

Characterisation and properties of magnetron sputtered nanoscale bi‐layered Ni/Ti thin films and effect of annealing

Single‐bi‐layer of Ni–Ti thin film was deposited using DC and RF magnetron sputtering technique by layer‐wise deposition of Ni and Ti on Si(100) substrate in the order of Ni as the bottom layer and Ti as the top layer. The deposition of these amorphous as‐deposited thin films was followed by annealing at 300 °C, 400 °C, 500 °C, and 600 °C temperature with 1‐h annealing time for each to achieve crystalline thin films. This paper describes the fabrication processes and the novel characterization techniques of the as‐deposited as well as the annealed thin films. Microstructures were analysed using FESEM and HRTEM. Nano‐indentation and AFM were carried out to characterize the mechanical properties and surface profiles of the films. It was found that, for the annealing temperatures of 300 °C to 600 °C, the increase in annealing temperature resulted in gradual increase in atomic‐cluster coarsening with improved ad‐atom mobility. Phase analyses, performed by GIXRD, showed the development of silicide phases and intermetallic compounds. Cross‐sectional micrographs exhibited the inter‐diffusion between the two‐layer constituents, especially at higher temperatures, which resulted either in amorphization or in crystallization after annealing at temperatures above 400 °C. Copyright © 2015 John Wiley & Sons, Ltd.