ZnO/TiO2复合光阳极染料敏化太阳能电池的研究

采用醇热法制备ZnO纳米粉体,采用水热法制备TiO2纳米粉体,将不同质量分数的ZnO与TiO2混合制备浆料,采用刮涂法在掺氟的SnO2透明导电玻璃(FTO)上制备ZnO/TiO2纳米复合薄膜光阳极,与Pt对电极和电解质组装成染料敏化太阳能电池.采用X射线衍射仪(XRD)、X射线光电子能谱仪(XPS)和扫描电镜(SEM)对所制备的样品进行表征,通过光电性能测试和电化学阻抗谱测试,研究了添加不同质量分数的ZnO对电池性能的影响.结果表明:不添加ZnO纳米粉时,纯TiO2光阳极的电池光电转换效率为7.95;,而添加了2wt; ZnO的ZnO/TiO2复合光阳极电池的效率达到9.54;,比纯TiO2电池的效率提高了20;.     

染料敏化太阳能电池的电子传输和复合特性研究

采用丝网印刷方法在透明导电玻璃上制备了不同厚度的TiO2纳米颗粒多孔薄膜光阳极,并与Pt对电极和I-/I3-电解液组装成染料敏化太阳能电池.通过电池的I-V特性、强度调制光电流谱、强度调制光电压谱和电化学阻抗谱分析,获得了电池的光伏性能和反映电子传输、复合和收集的动力学参数.结果表明:随着TiO2光阳极厚度从5μm逐渐增加到14 μm,电池的光电转换效率从4.67;逐渐增加到8.21;,光生电子在光阳极中的传输时间从2.74 ms逐渐增加到7.84 ms,电子扩散系数从3.88×10-5 cm2·s-1增加到1.10×10-4cm2 ·s-1,电荷收集效率逐渐减小,结合这些参数,分析了染料敏化电池中电子传输、复合和收集的动力学过程.     

Yb3+-Ho3+-F-共掺杂TiO2纳米晶的上转换发光性能及其在染料敏化太阳能电池中的应用

采用溶胶-水热法制备了Yb3-Ho3+-F-共掺杂的TiO2(简写为UC-F-TiO2)纳米粉末.通过XRD,TEM,拉曼光谱,XPS和发光光谱,研究了yb3掺杂浓度对UC-F-TiO2纳米粉末的结构、形貌和上转换发光性能的影响规律.结果表明:UC-F-TiO2纳米粉末颗粒的大小约20 nm,由金红石和锐钛矿两种结构混合组成,且随着yb3+掺杂浓度的增加,金红石结构的TiO2所占比例增加;在980 nm激光激发下,UC-F-TiO2发射出中心在543 nm、647 nm和751 nm处的三个发光带.研究了基于UC-F-TiO2和纯TiO2纳米多孔薄膜光阳极的染料敏化电池的光伏性能.结果表明:与纯TiO2制备的电池相比,将UC-F-TiO2应用于染料敏化电池,电池的光电转换效率提高了29.7;.     

敏化条件对染料敏化太阳能电池性能的影响

通过实验方案,对影响染料敏化太阳能电池(DSSC)的敏化条件进行了优化设计,在光阳极初始默认的制作条件下,从海带中提取叶绿素,分别对影响DSSC光电性能的敏化染料溶液浓度、pH值、温度、受光时间、敏化时间、对电极背景色等影响因素逐一进行研究,最终确定了光阳极敏化的最优条件:醇水溶液的最佳稀释比为1:2,最佳敏化pH=8,最佳敏化温度为30℃,最佳敏化时间24 h,黑暗环境下敏化效果最好,且对电极采用镜面背景最佳,最终获得光电转换效率0.76;.     

掺杂SrTiO3∶Sm3+的纳米TiO2光阳极的制备及其光电性能研究

采用水热法制备SrTiO3∶Sm3+纳米粉体,将其作为下转换剂掺杂于纳米TiO2光阳极.用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、能谱分析仪(EDS)和荧光光谱仪对SrTiO3∶Sm3+粉体进行表征,并探讨了SrTiO3∶Sm3+掺杂量对染料敏化纳米TiO2太阳能电池光电性能的影响.结果表明:合成的SrTiO3∶Sm3+纳米粉体具有下转换功能,将紫外光转换为592 nm处的黄光,拓宽了光谱响应范围;随着SrTiO3∶Sm3+掺杂量的增加,电池的短路电流密度显著增大,当其掺杂量为10wt;时,电池的暗电流密度最小,光电转换效率最大为4.38;,相对于纯TiO2效率提高了27;.     

ZnO纳米棒阵列/纳米颗粒团聚复合膜的制备及其光电性能

采用恒温水浴法在FTO导电玻璃上制备出了ZnO纳米棒阵列,然后对其进行二次生长后得到了ZnO纳米棒阵列/纳米颗粒团聚复合膜,最后它们分别与Pt形成对电极并与电解质溶液组装成染料敏化太阳能电池(DSSC)。结果表明:当在模拟太阳光照射(AM 1.5,100 mW/cm2)下时,ZnO纳米棒阵列/纳米颗粒团聚复合膜太阳能电池的短路电流密度Jsc为11.7 mA/cm2,开路电压Voc为0.661 V,填充因子FF为0.384,光电转换效率为3.17%,均明显的高于ZnO纳米棒阵列太阳能电池和ZnO纳米颗粒团聚球太阳能电池。其主要原因是由于ZnO纳米棒阵列/纳米颗粒团聚复合膜染料敏化太阳能电池在具有较高的光生电子传输效率的同时,增加了比表面积和提高了光子的收集效率。     

用海娜花天然染料为敏化剂制备纳米TiO2太阳能电池

以无水乙醇为溶剂,从海娜花中提取天然染料,用其作为敏化剂制备了纳米TiO2太阳能电池.采用高效液相色谱-二极管阵列检测器(HPLC-DAD)对天然染料组成进行分析,用紫外-可见(UV-Vis)吸收光谱对不同pH值下的海娜花染料进行测试,并对其敏化的纳米TiO2太阳电池进行光电性能分析.结果表明:海娜花天然染料主要成分为指甲花醌、木犀草素,次要成分为类胡萝卜素、叶绿素a及芹菜素等;在中性(原始pH值)条件下,在可见光区约420 nm、470 nm、670 nm处有吸收峰,在紫外光区约340 nm处有吸收峰;在碱性条件下,由于指甲花醌、木犀草素、芹菜素等酚羟基质子解离,紫外吸收峰发生红移并且吸收强度增加;在酸性条件下叶绿素a失去卟啉环中的镁成为脱镁叶绿素,主要吸收峰都在420 nm和670 nm左右;在pH =5时,海娜花天然染料作为敏化剂制备的纳米TiO2太阳能电池的光电性能比较好,开路电压为0.39 V、短路电流密度为0.66 mA·cm-2、填充因子为0.60、光电转换效率为0.15;,400nm处IPCE为1.7;.     

染料敏化太阳电池工艺参数的优化

染料敏化纳晶TiO2薄膜太阳电池的性能受TiO2浆料组成、薄膜厚度、烧结工艺、染料浸渍时间、导电玻璃类型以及电极处理工艺等因素影响是很明显的.通过对上述各工艺参数的研究,探讨了它们对电池性能的影响规律,获得了最佳的工艺参数组合.     

高比表面纳米二氧化钛胶体、多孔电极及DSC电池的制备

以钛酸四丁酯为前驱物,冰醋酸为水解抑制剂,浓硝酸为胶溶剂,结合溶胶-凝胶与水热处理法成功制备了具有高比表面积的纳米二氧化钛胶体.除水、酸后,浓缩并添加有机粘结剂制成了纳米TiO2浆料.刷制多孔电极并组成电池后测试了其光电特性.调整胶溶剂-浓硝酸的添加量,制备了具有不同颗粒大小、晶型、比表面积的TiO2纳米颗粒.为了提高多孔薄膜的光散射效应,在浆料中添加了400 nm TiO2粉体,研究了其掺入量对电池特性的影响.结果表明,当硝酸加入量为 1 mL、掺入20;大颗粒TiO2时,制备的电池效率达到4.19;(Jsc=8.32 mA/cm2, Voc=0.76 V, FF=66.31;).     

TiCl4处理对TiO2薄膜显微结构以及染料敏化太阳电池性能的影响

本文通过粉末涂敷法制备了纳米TiO2多孔膜,并用40 mM的TiCL4水溶液对多孔膜进行了表面处理,发现TiCl4处理对多孔薄膜的显微结构有重要影响.通过纳米TiO2多孔膜的表面形貌分析,发现TiCl4处理降低了薄膜因高温烧结而出现的"龟裂"现象,同时薄膜中微空洞数量增加,分布更均匀,进而显著提高了染料敏化太阳电池的光电转化效率.     

GeSe基薄膜太阳电池模拟研究

硫化亚锗(GeSe)具有合适的禁带宽度、高的吸收系数和高的载流子迁移率等优异的光电特性,且组分简单、低毒和储量丰富,特别适合作为光伏吸收材料。本文基于新型太阳电池吸收层材料GeSe构筑了结构为金属栅线/AZO/i-ZnO/CdS/GeSe/Mo/玻璃的薄膜太阳电池,分别模拟分析了缓冲层和吸收层的厚度、掺杂浓度,以及吸收层体缺陷密度对器件性能的影响。经过优化CdS缓冲层厚度和掺杂浓度以及GeSe吸收层厚度和掺杂浓度,器件获得高达27.59%的转换效率。这些结果表明GeSe基薄膜太阳电池有成为高效光伏器件的潜力。     

射频溅射功率对ZnO透明导电薄膜光电性能的影响

采用磁控溅射技术在不同溅射功率下制备了ZnO薄膜.研究了薄膜的沉积速率、光电特性以及不同功率条件下制备的ZnO薄膜对HIT电池开路电压的影响.结果表明:在溅射功率为200 W时制备的薄膜,具有良好的导电性和光透过性;将其应用到HIT电池中,得到的开路电压最高.该研究对提高HIT电池性能具有一定的参考意义.     

本征微晶硅薄膜和微晶硅电池的制备及其特性研究

本文对VHF-PECVD制备的本征微晶硅薄膜和电池进行了电学特性和结构特性方面的测试分析研究.电学测试结果给出制备薄膜的激活能为0.51eV,符合电池对材料的电学参数要求;拉曼散射谱测试结果计算得到样品的晶化率为63;;X射线衍射结果也证明材料晶化,同时(220)方向择优;首次在国内用VHF-PECVD方法制备出效率为5;的微晶硅电池(Jsc=21mA/cm2,Voc=0.46V,FF=51;,Area=0.253cm2).     

Ca3NbGa3Si2O14晶体的拉曼散射及密度泛函研究

根据空间群理论(SPT)计算了Ca3NbGa3S i2O14晶体(简称CNGS)的拉曼光谱,并测量了CNGS的室温拉曼光谱。根据晶体结构,构造了两个团簇(Ca3NbGa2S iO12,Ca3NbGaS i2O12),利用密度泛函理论(DFT)对拉曼光谱进行了计算和模拟。结果表明理论与实验非常吻合,CNGS良好的压电性起源于两个团簇大的极化率各向异性。     

液相沉积法处理TiO2纳米晶膜对其光电性能的影响

将涂有TiO2纳米晶膜的导电玻璃浸渍于氟钛酸铵、硼酸和水的液相沉积(Liquid Phase Deposition,简称LPD)反应溶液中,利用反应液中氟的金属配位离子和金属氟化物之间的化学平衡反应,在TiO2纳米晶多孔膜(简称nc-TiO2膜)上沉积一层TiO2纳米粒子,从而实现对TiO2纳米晶膜进行化学处理。以经过LPD处理的TiO2纳米晶膜作为光阳极组装染料敏化太阳能电池(DSSC)并测试其伏安特性曲线,研究了不同反应时间条件下LPD处理nc-TiO2膜对DSSC光电性能的影响。结果表明:在一定条件下用LPD处理TiO2纳米晶膜可显著提高其DSSC光电性能,短路电流密度最高提高13.13%,能量转化效率最高提高13.95%。论文对LPD处理TiO2纳米晶膜提高DSSC光电转化性能的原因进行了分析。     

单层n型MoS2/p型c-Si异质结太阳电池数值模拟

单层二硫化钼(MoS₂)是一种具有优异光电性能的半导体材料,在太阳能能量转换中表现出很大的应用潜力。本文基于AMPS模拟软件,对单层n型MoS₂/p型c-Si异质结太阳电池进行了数值模拟与分析。通过模拟优化,n型MoS₂的电子亲和能为3.75 eV、掺杂浓度为10¹⁸ cm^-3,p型c-Si的掺杂浓度为10¹⁷ cm^-3时,太阳电池能够取得最高22.1%的转换效率。最后模拟了n型MoS₂/p型c-Si异质结界面处的界面态对太阳电池性能的影响,发现界面态密度超过10¹¹ cm^-2·eV^-1时会严重影响太阳电池的光伏性能。     

A density functional theory study on multiple exciton generation in lead chalcogenides

Abstract

Quantum confined structure-based solar cell is promising two folds increment of the maximum theoretical photovoltaic conversion efficiency i.e., > 60% in comparison with that of the bulk analogs e.g., silicon-based and dye sensitized solar cell (ca. 32% of maximum theoretical efficiency). The key to the significant increment is the ability of the fluorophore to exhibit multiple exciton generation upon absorption photon with sufficient energy. Small size of lead chalcogenides (PbS, PbSe, PbTe) crystals have been reported and proven experimentally could exhibit this unique property. We have investigated few clusters of narrow bandgap lead chalcogenides nanocrystals i.e., (PbS)n, (PbSe)n and (PbTe)n; which n?=?4 - 80. The cluster models were optimized using quantum chemical calculations to the lowest energy geometry at B3LYP/lanl2dz level of theory. The predicted realistic (PbS)₈₀, (PbSe)₅₀, and (PbTe)₇₄ clusters with the size, and bandgap of 4.58?nm (2.00?eV), 4.03?nm (1.51?eV), and 4.84?nm (1.55?eV) are smaller than that of their exciton Bohr radius i.e., 5.01, 13.1, and 24.8?nm respectively. Therefore, the occurrence of multi exciton generation in the clusters is hypothesized upon absorption of photon with E_photon = 2E_g.     

Microcrystalline silicon–germanium thin films prepared by the chemical transport process using hydrogen radicals

We propose microcrystalline silicon–germanium (μc-SiGe) as a bottom cell material of triple-junction solar cells in order to improve the conversion efficiency of thin film solar cells. The μc-SiGe thin films were prepared by the chemical transport process using Si and Ge targets exposed to hydrogen radicals. We successfully produced highly photosensitive μc-SiGe films with relatively low Ge composition by increasing the gas pressure, and observed the photovoltaic effect in pin solar cell structures. However, it was difficult to produce μc-SiGe films with higher Ge composition. We found that a small amount of argon introduction into the chemical transport process enables us to increase Ge composition at the high pressure. Moreover, the argon introduction seems effective to maintain the electrical properties in relatively high Ge composition. The results suggest that the μc-SiGe thin films prepared by the chemical transport process are one of the candidates for new photovoltaic materials.     

Photostimulated changes of properties of CdTe films

The effect of illumination during the close‐spaced sublimation (CSS) growth on composition, structural, electrical, optical and photovoltaic properties of CdTe films and CdTe/CdS solar cells were investigated. Data on comparative study by using X‐ray diffraction (XRD), scanning electron microscopy (SEM), absorption spectra and conductivity‐temperature measurements of CdTe films prepared by CSS method in dark (CSSD) and under illumination (CSSI) were presented. It is shown that the growth rate and the grain size of CdTe films grown under illumination is higher (by factor about of 1.5 and 3 respectively) than those for films prepared without illumination. The energy band gap of CdTe films fabricated by both technology, determined from absorption spectra, is same (about of 1.50 eV), however conductivity of the CdTe films produced by CSSI is considerably greater (by factor of 10⁷) than that of films prepared by CSSD. The photovoltaic parameters of pCdTe/nCdS solar cells fabricated by photostimulated CSSI technology (J_sc = 28 mA/cm², V_oc =0.63 V) are considerably larger than those for cells prepared by CSSD method (J_sc = 22 mA/cm², V_oc = 0.52 V). A mechanism of photostimulated changes of properties of CdTe films and improvement of photovoltaic parameters of CdTe/CdS solar cells is suggested. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical properties and synthesis of CuInSe2 thin films by selenization of Cu/In layers

In this paper, we report the effect of annealing temperature on the properties of copper indium diselenide (CuInSe₂) thin films. The CuInSe₂ thin films were fabricated at 500 °C for 2 h by annealing Cu‐In layers (as precursors) selenized in a glass tube with pure selenium powder. The structural and morphological properties of the CuInSe₂ thin films were characterized respectively by means of x‐ray diffraction (XRD) and field‐emission scanning electron microscope (FE‐SEM). The type of CuInSe₂ thin film has been identified as direct allowed and the band gap value was determined. The study of UV/Visible/NIR absorption shows that the band gap value of CuInSe₂ thin film is about 1.07 eV, which is within an optimal range for harvesting solar radiation energy. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)