Effect of low-voltage spark discharge parameters on the spectral line intensities of sulfur and halogens

The influence of various circuit parameters on the spectral line intensities of sulfur and the halogens when excited in a low-voltage spark discharge have been investigated. The intensities were maximum for a discharge current of 6–8 A and a 1.0–1.5 mm spark gap. In ac spark discharges the maximum intensities occurred with capacitances of 20–50F and an inductance of 15H for primary circuit resistance of 200 ohm, and with 50–100F and 30–60H for 400 ohm. The intensities attained with dc sparks were higher than those with ac sparks. The intensity increased if the specimen served as the cathode and, in this case, occurred with capacitances of 100–800F and inductances of 30–60H for an ignition frequency of 12 sec^–1.     

Growth and properties of Ti-Cu films with respect to plasma parameters in dual-magnetron sputtering discharges

Properties of different methods of magnetron sputtering (dc-MS, dual-MS and dual-HiPIMS) are studied and compared with respect to intermetallic Ti-Cu film formation. The quality and features of thin films are strongly influenced by the energy of incoming particles. The ion velocity distribution functions (IVDFs) were measured by time-resolved retarding field analyzer (RFA) in the substrate position. Thin films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffractometry (XRD) and X-ray reflectometry (XR). Properties and crystallography of Ti-Cu films are discussed as a function of ion energy which is affected by the mode of sputtering. It was found that IVDFs measured in pulsed discharges exhibit double-peak distribution. The IVDFs reach the maximum at ion energies about  ~8 eV. The ion saturated current is highest in dual-HiPIMS discharge (~5 μA/cm²) and is mostly represented by Cu⁺ and Ar⁺ ions. The mode of sputtering influences chemical composition and film formation. The copper forms polycrystalline fcc-phase while much smaller Ti particles enwraps the copper crystallites or are part of a solid solution.     

Prospects of developing multibeam systems for low-voltage electron lithography

The prospects of developing tiny multibeam systems for electron lithography have been considered. Designs of tiny basic elements of electron-optical systems, including a magnetic lens with an open magnetic circuit and a lens with aligned axially symmetric fields (whose magnetic circuit simultaneously plays the role of electrodes of an electrostatic lens), are represented, as well as their analysis. The results of the investigation of high-speed one-turn deflection systems without or with a core and the analysis of a stigmator are reported. Radically new approaches to design of tiny electron-optical systems have been considered, which make it possible to increase the efficiency of electron beam formation and pass to micro-and nanotechnological design of vacuum microsystems.     

Effects of ultrasound on electrode damage and spectrum intensity for a low-voltage discharge

Journal of Applied Spectroscopy -     

Synthesis of electrodes for relativistic electron streams

The condition for geometrical similarity of trajectories given by Dryden has been modified to be relativistically correct, thus allowing the complete Dryden-Harker procedure to be used to design electrodes for relativistic electron streams of limited velocity spread. The magnetic field in the cathode region has been modelled by an analytic expression, to allow converging field to be simulated while similarity of the magnetic force is retained. Examples are given of the use of the revised method for design of high-voltage and external electron guns for gyrotrons.     

Annealing effect of platinum-based electrodes on physical properties of PZT thin films

This study examined the crystal structure and surface morphology, including the Ti segregation mechanism on the surface due to the inter-diffusion between Pt, Ti and TiO_x as a glue layer, according to the annealing temperature and growth orientation of a Pt film. In addition, the fatigue mechanism of ferroelectric PZT thin films deposited on a Pt-based electrode was also investigated. The nano-structure, orientation mapping, and micro-morphologies of the triangular Pt hillocks were investigated by scanning electron microscopy with an electron backscatter diffraction (EBSD) function. The D–E hysteresis loop of the ferroelectric films was measured using a Sawyer–Tower circuit at 1 kHz to obtain the remanent polarization and coercive field.     

Equivalent cylinder model for describing the field of a low-voltage electron gun

Problems of electron gun operation at low voltages are discussed. The gun characteristics are analyzed within the equivalent cylinder model. A formula for the cut-off voltage is obtained. The minimum crossover size is determined by the cathode depth for low potentials in the Wehnelt bore. The dependences of the minimal crossover size on bias are plotted for different geometries.     

Simple model for electron inelastic mean free paths: Application to condensed organic materials

A simple, ‘one-mode’ approximation for the wavevector- and frequency-dependent energy-loss function is employed to derive an expression for the electron inverse mean free path, λ_v^?1, including the effect of exchange between the incident electron and the electrons in the medium. Relation to optical data is made by averaging λ_v^?1, over the optical oscillator strength distribution, which is proportional to ωIm[— 1/?(ω)]. For materials for which the optical oscillator strength distribution may be approximated by a single, Drude-type function, especially organic materials, the general results may be cast in a particularly simple form. Using a few constants derived from optical data for a given material, electron mean free paths in that material can be predicted for electron energies ? 150 eV. An approximate expression is also deduced for estimating electron mean free paths in materials for which no optical data are available. Mean free paths determined using this approximate expression agree well with those obtained in our earlier ‘universalcurve’ predictions. For polyethylene, the excellent agreement between results from the model presented here and those from a more detailed insulator model gives additional support for this simple theoretical approach. Agreement between theoretical predictions and experimental measurements of electron mean free paths in organic compounds, which in some cases is quite good, is on the whole less than satisfactory.     

A comparative study of electron transport in benzene molecule covalently bonded to gold and silicon electrodes for pioneering the electron transport properties of silicon quantum dot-molecule hybrid polymers

In order to pioneer the electron transport properties of silicon (Si) quantum dot-molecule hybrid polymers, we investigate the electron transport properties of the benzene molecule in silicon (Si) semiconductor electrodes, based on nonequilibrium Green's function (NEGF) method coupled with density functional theory (DFT), in comparison with conventional gold (Au) metal electrodes, with three different anchoring linker groups: thiol for dithiol-benzene (DTB), methylene for dimethyl-benzene (DMB), and direct bonding for benzene (Ph). It is interestingly found that, due to band gap nature of the Si semiconductor electrodes, the molecular junctions with the Si electrodes show no current up to the bias voltage of around 0.8 V. In addition, the DTB molecular junctions in the Si semiconductor electrodes connected with Si–S bond show higher conducting properties than other DMB and Ph molecular junctions directly coupled to the electrodes with the Si–C bonds (DMB < Ph < DTB). The electron transport properties of the molecules in the two different electrodes are analyzed on the basis of the understanding transmission spectra, projected density of states (PDOS), and molecular orbitals. We believe that the use of thiol linker may open new possibility in the molecular electronics with the Si semiconductor electrodes and the Si QD-molecule hybrid polymers concept.     

Emission properties of a plasma cathode based on a glow discharge for generating nanosecond electron beams

The emission properties of a plasma cathode based on a nanosecond pulsed glow discharge with currents of up to 200A at a pressure of 5×10⁻² Pa are studied experimentally. Stable ignition and burning of the discharge are ensured if the current in the auxiliary pulsed discharge is 25–30% of that in the main discharge and its pulse duration exceeds that of the main discharge by more than an order of magnitude. Emission current pulses from the cathode with amplitudes of up to 140A fully reproduce the discharge current and are determined by the transparency of the grid anode. Zh. Tekh. Fiz. 69, 62–65 (November 1999)     

Na||Sb-Pb-Sn液态金属电池电极的价电子结构与热-电性能计算

应用固体与分子经验电子理论系统地研究液态金属池Na||Sb-Pb-Sn电极的价电子结构与热、电性能.研究结果表明:电极合金的价电子结构与其性能密切关联.阴极合金Na_1–xIA_x (IA=K, Rb, Cs)的晶格电子随着掺杂量的增加而减少,诱发合金的熔点、结合能随掺杂量的增加而降低. Na离子输运到阳极,与阳极Sb-Sn-Pb形成产物NaSb_3, NaSn, Na₁₅Sn_4, NaPb.其理论熔点与实验相符. NaSb_3的平均晶格电子数最少,开路电压最高.研究表明:对于Na||Sb-Pb-Sn液态金属电池体系而言,晶格电子扮演重要的角色,可以调控电极的热、电性能.     

The influences of gas and electron temperatures on electron attachment in gas electrical discharges

Various electron attachment processes are reviewed, emphasising the way in which the rates and products of some selected reactions vary with the attaching gas temperatureT _g, the temperature,T _e, and the energy of the attaching electrons. The examples illustrating the variety of reactions are the efficient dissociative attachment reaction to CCl₄, attachment to SF₆ which involves both dissociative and non-dissociative attachment, attachment to CHCl₃ which requires activation energy, and attachment to CCl₃Br which results in both Cl- and Br- product ions. A model has been presented which is able to quantitatively explain the difference influences ofT _g andT _e on the rates of some of these reactions. Also described are the unusually efficient attachment properties of the fullerene molecules C₆₀ and C₇₀ as revealed by our FALP experiments, noting that these molecules have potential importance as efficient suppressers of electrical breakdown through gases such as those used to insulate high voltage devices. We emphasise throughout this paper the importance of an understanding of the separate influences of gas and electron temperature on attachment reactions for the modelling of practical gas discharge media such as etchant plasmas. We dedicate this paper to Professor Jan Janča on the occasion of his sixtieth birthday in recognition of his major contributions to gas discharge physics.