Effect of a Coulomb well in (In,Ga)As/GaAs quantum wells

Magnetooptical investigation of exciton transitions in high-quality quantum wells of an (In, Ga)As/GaAs heterosystem has been carried out. Investigation of transmission of free-hanging samples detached from the substrate in the magnetic fields of up to 12 T revealed a rich fine structure associated with various heavy-hole and light-hole exciton transitions. In particular, transitions from the excited states of light holes localized in a Coulomb potential produced by an electron along the heterojunction axis (a Coulomb well) have been detected. Taking into account consistently stresses, formation of Landau levels, the binding energies of excitons (diamagnetic excitons), and the effect of a Coulomb well, we have succeeded to describe the experimental results with the use of a self-consistent variational procedure. As a result, new features in the structure of optical transitions have been explained and the effective masses of electrons and holes of excitons formed by both heavy and light holes have been determined with a high accuracy.     

生长温度对In_(0.5)Ga_(0.5)As/GaAs量子点尺寸的影响

采用分子束外延(MBE)技术制备In_(0.5)Ga_(0.5)As/GaAs量子点,利用扫描隧道显微镜(STM)对不同衬底温度下生长的样品进行表征分析.研究表明量子点密度随温度升高先增大后减小,其尺寸随温度的升高而增大.另外,量子点以S-K模式生长并受Ostwald熟化机制影响,其尺寸增大所需的能量来自应变能和温度提供的能量,高温条件下表面原子的解吸附作用会限制量子点的生长.     

Lateral carrier tunnelling in stacked In(Ga)As/GaAs quantum rings

Exciton recombination dynamics in vertical stacks of InGaAs quantum rings have been studied by means of continuous wave and time resolved photoluminescence under low excitation density conditions. We have paid special attention to the effect of the carrier coupling on the exciton radiative lifetime: weak (14 nm spacer sample), intermediate (4.5 nm spacer sample), where the size filtering effects (towards small rings) compensate partially that arising from carrier coupling (towards lower energies), and strong electron and hole coupling (1.5 nm spacer sample) between layers. Experimental decay times in the latter two cases have been compared to the times simulated with a multi-quantum well based model, which accounts for the observed change of carrier coupling regime. The most important effect is observed when the hole wave function overlap along the growth direction becomes important (1.5 nm spacer sample). This situation makes important the lateral tunneling of excitons between rings, given their large lateral size, which is characterized by times around 5 ns at the emission peak energy (rings with the most probable size of the distribution).     

Weak localization in Al0.25Ga0.75As/In0.2Ga0.8As/GaAs wires

The phase coherence length L_Ø, its temperature dependence and the spin-orbit scattering length L_SO in Al_0.25Ga_0.75As/In_0.2Ga_0.8As/GaAs wires fabricated by electron-beam lithography and CH₄/H₂ Reactive Ion Etching (RIE), were extracted by fitting a 1-dimensional weak localization theory to two-terminal measurements in the temperature range between 2 K and 50 K. The scattering mechanism was found to be Nyquist (electron-electron collisions with small energy transfer).     

Anomalous behavior of excitons at light holes in strained (In, Ga)As/GaAs heterostructures

Additional localization of holes due to Coulomb attraction to the electron located in a quantum well is important for light-hole excitons in the heterostructure (In, Ga)As/GaAs. The fine structure of the optical and magneto-optical spectra of these quantum wells is examined in detail with the formation of a “Coulomb well” and deformations taken into account. Fiz. Tverd. Tela (St. Petersburg) 40, 797–799 (May 1998)     

Optical generation of spin coherence in single-charged (In,Ga)As/GaAs self-assembled quantum dots

The generation of electron spin coherence has been studied in n-modulation-doped (In,Ga)As/GaAs self-assembled quantum dots (QDs) which contain on average a single electron per dot. The doping has been confirmed by pump–probe Faraday rotation experiments in a magnetic field parallel to the heterostructure growth direction. For studying spin coherence, the magnetic field was rotated by 90° to the Voigt geometry, and the precession of the electron spin about the field was monitored. The coherence is generated by resonant excitation of the QDs with circularly polarized laser pulses, creating a coherent superposition of an electron, and a trion state. The efficiency of the generation can be controlled by the pulse intensity, being most efficient for (2n+1)π pulses.     

Optical control of spin coherence in singly charged (In,Ga)As/GaAs quantum dots

Electron spin coherence has been generated optically in n-type modulation doped (In,Ga)As/GaAs quantum dots (QDs) which contain on average a single electron per dot. The coherence arises from resonant excitation of the QDs by circularly polarized laser pulses, creating a coherent superposition of an electron and a trion. Time dependent Faraday rotation is used to probe the spin precession of the optically oriented electrons about a transverse magnetic field. The coherence generation can be controlled by pulse intensity, being most efficient for (2n+1)pi pulses.     

Very large tunneling anisotropic magnetoresistance of a (Ga,Mn)As/GaAs/(Ga,Mn)As stack

We report the discovery of a very large tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The key novel spintronics features of this effect are as follows: (i) both normal and inverted spin-valve-like signals; (ii) a large nonhysteretic magnetoresistance for magnetic fields perpendicular to the interfaces; (iii) magnetization orientations for extremal resistance are, in general, not aligned with the magnetic easy and hard axis; (iv) enormous amplification of the effect at low bias and temperatures.     

Diffusion thermopower of (Ga,Mn)As/GaAs tunnel junctions

We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and thus has a strongly anisotropic response to the direction of magnetization in the material. The effect will have relevance to the operation of semiconductor spintronic devices, and may indeed already play a role in correctly interpreting the details of some earlier spin injection studies.     

Photomagnetic effect in In(Ga)As/GaAs heteronanostructures with quantum dots and wells

The influence of quantum-size layers (InAs quantum dots, In_0.2Ga_0.8As quantum wells, and combined quantum-well/quantum-dot layers) and heteroepitaxial passivation of surface by an In_0.5Ga_0.5P layer on the photomagnetic effect in epitaxial n-GaAs layers has been investigated. Original Russian Text ? I.A. Karpovich, O.E. Khapugin, 2009, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2009, Vol. 73, No. 1, pp. 119–123.     

Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction

Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5 x 0.3 microm2 device revealed that magnetization switching occurs at low critical current densities of 1.1-2.2 x 10(5) A/cm2 despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed.     

Quantum light emission of two lateral tunnel-coupled (In,Ga)As/GaAs quantum dots controlled by a tunable static electric field

Lateral quantum coupling between two self-assembled (In,Ga)As quantum dots has been observed. Photon statistics measurements between the various excitonic and biexcitonic transitions of these lateral quantum dot molecules display strong antibunching confirming the presence of coupling. Furthermore, we observe an anomalous exciton Stark shift with respect to static electric field. A simple model indicates that the lateral coupling is due to electron tunneling between the dots when the ground states are in resonance. The electron probability can then be shifted to either dot and the system can be used to create a wavelength-tunable single-photon emitter by simply applying a voltage.     

Carrier spin polarization in ferromagnet-semiconductor (Ga,Mn)As/GaAs structures

The effect of ferromagnetic layers on the spin polarization of holes and electrons in ferromagnet-semiconductor superlattices with a fixed Mn δ-layer thickness of 0.11 nm and different GaAs interlayer thicknesses varying in the range from 2.5 to 14.4 nm and a fixed number of periods (40) is studied by means of hot-electron photoluminescence (HPL). Here, our study of the HPL demonstrates that the holes in δ-layers of (Ga,Mn)As DMS occupy predominantly the Mn acceptor impurity band. The width of the impurity band decreases with the increase of the interlayer distance. We also found that an increase in the GaAs interlayer thickness softens the magnetic properties of the ferromagnetic layers as well as reduces the carrier polarization. It is demonstrated that the hole spin polarization in the DMS layers and spin polarization of electrons in nonmagnetic GaAs are proportional to the sample magnetization.     

Scattering mechanisms in (Al, Ga)As/GaAs 2DEG structures

We have prepared a large number of high mobility two-dimensional electron gas (2DEG) structures, with undoped spacer thicknesses ranging from 9 to 3200Å. For samples with 400Å of (Al, Ga)As Si-doped at 1.3×10¹⁸ cm⁻³, there is a peak in the 4K mobility at spacers of 400–800Å, with a maximum value of 2×10⁶ cm² V⁻¹ s⁻¹. Increasing the thickness of the doped (Al, Ga)As to 500Å produced an increase in mobility to 3×10⁶ cm² V⁻¹ s⁻¹ for a 400Å space sample. We have compared these results with published analyses of scattering processes in 2DEG structures, and conclude that a combination of ionised impurity and acoustic phonon scattering gives a qualitative explanation of the behaviour, but that the experimental mobility values are generally higher than those predicted theoretically.     

Technology of the (Al,Ga)As/GaAs double heterostructure lasers

Conclusion Even thqugh the LPE growth of (Al,Ga)As layers is now largely a matter of industrial development or routine, there still remain some problems that need fundamental study. We have pointed to two of them: growth of very thin layers and the influence of ambient atmosphere. The problem of automation of the growth process, while being connected with industrial LPE installations, also has a bearing on the fundamental research, e.g. it is important for reproducible preparation of very thin layers.We did not include in this paper work done in our laboratories in the field of integrated optics. A hybrid combination of DH coherent source with a MESFET GaAs device has been tested; integrated version of this optoelectronic circuit is in preparation.Invited talk at the International Conference on Radiative Recombination and Related Phenomena in III–V Compound Semiconductors, Prague, 4–7 October, 1983.     

Coulomb blockade transport across lateral (Ga,Mn)As nanoconstrictions

We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature dependent measurements down to the millikelvin range we compare the models currently used to describe transport through (Ga,Mn)As nanoconstrictions. We provide an explanation for the observed spin-valve like behavior during a magnetic field sweep by means of the magnetization configurations in the device. Furthermore, we prove that Coulomb blockade plays a decisive role for the transport mechanism and show that modeling the constriction as a granular metal describes the temperature and bias dependence of the conductance correctly and allows to estimate the number of participating islands located in the constriction.     

Real-Code Genetic Algorithm for Ground State Energies of Hydrogenic Donors in GaAs-(Ga,Al)As Quantum Dots

We present a global optimization method, called the real-code genetic algorithm (RGA), to the ground state energies. The proposed method does not require partial derivatives with respect to each variational parameter or solving an eigenequation, so the present method overcomes the major difficulties of the variational method. RGAs also do not require coding and encoding procedures, so the computation time and complexity are reduced. The ground state energies of hydrogenic donors in GaAs-(Ga,Al)As quantum dots have been calculated for a range of the radius of the quantum dot radii of practical interest. They are compared with those obtained by the variational method. The results obtained demonstrate the proposed method is simple, accurate, and easy implement.     

Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots

Current–voltage and low frequency excess electrical noise characteristics of two different—Schottky diode and n-i-n diode—GaAs structures embedded with self-assembled In(Ga)As quantum dots are reported. We find the growth of quantum dots induces defects not only near the quantum dot but also extended to quite a distance toward the growth direction. In Schottky diode structure, comparing with the reference sample without the quantum dot layer, the current dependence of the low frequency noise spectral density indicated that the noise is from the generated interface states with the density increasing towards the band tail. Also the crystal quality of the Schottky diode including the quantum dot layer, deduced from the Hooge parameter, was slightly worse than that of the reference sample. For n-i-n diode structure, the current–voltage relation was linear, and a quadratic current dependence of the noise spectral density was observed. The Hooge parameter for the n-i-n structure was determined to be on the order of unity indicating the general degradation of the structure.     

Investigation of barrier tunneling characteristics of symmetrical double quantum well in In0.25Ga0.75As/GaAs/In0.25Ga0.75As heterostructure

The optical and electrophysical properties of the GaAs/In_0.25Ga_0.75As heterostructure with a symmetric double quantum well have been investigated. The influence of tunneling electrons and holes through an internal barrier of the quantum well on the shift and splitting of the quantum levels is analyzed. The theoretical estimates are compared with the results of the photoluminescence and photoconductivity measurements. The Hall measurements indicate that the barrier strongly affects the mobility of charge carriers.     

Kondo and Coulomb Interaction Effects in Spin-Polarized Transport through Double Quantum Dots

By means of the slave-boson mean-field approximation, we theoretically investigate the Kondo and Coulomb interaction effects in spin-polarized transport through two coupled quantum dots coupled to two ferromagnetic leads by the Anderson Hamiltonian. The density of states is calculated in the Kondo regime for the effect of the interdot Coulomb repulsion with both parallel and antiparallel lead-polarization alignments. Our results reveal that the interdot Coulomb interaction between quantum dots greatly influence the density of states of the dots.