Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

A novel lateral double-gate tunnelling field effect transistor （DG-TFET） is studied and its performance is presented by a two-dimensional device simulation with code ISE. The result demonstrates that this new tunnelling transistor allows for the steeper sub-threshold swing below 60mV/dec, the super low supply voltage （operable at VDD 〈 0.3 V） and the rail-to-rail logic （significant on-state current at the drain-source voltage VDS = 50mV） for the aggressive technology assumptions of the availability of high-k/metal stack with equivalent gate oxide thickness EOT =0.24 nm and the work function difference 4.5 eV of materials.     

Electrical Characterization of Copper Phthalocyanine Thin-Film Transistors with Fluoride Gate Insulator

Different fluoride materlals are used as gate dielectrics to fabricate copper phthalocyanine （CuPc） thin film transistors （OTFTs）. The fabricated devices exhibit good electrical characteristics and the mobility is found to be dependent on the gate voltage from 10^-3 to 10^-1 cm^2V^-1 s^-1. The observed noticeable electron injection at the drain electrode is of great significance in achieving ambipolar OTFTs, The same method for formation of organic semiconductors and gate dielectric films greatly simplifies the fabrication process. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for integration in organic displays.     

SILC during NBTI Stress in PMOSFETs with Ultra-Thin SiON Gate Dielectrics

Negative bias temperature instability （NBTI） and stress-induced leakage current （SILC） both are more serious due to the aggressive scaling lowering of devices. We investigate the SILC during NBTI stress in PMOSFETs with ultra-thin gate dielectrics. The SILC sensed range from -1 V to 1 V is divided into four parts： the on-state SILC, the near-zero SILC, the off-state SILC sensed at lower positive voltages and the one sensed at higher positive voltages. We develop a model of tunnelling assisted by interface states and oxide bulk traps to explain the four different parts of SILC during NBTI stress.     

Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode

In order to reduce the reset current of cllalcogenide random access memory; a W sub-microtube heater electrode with outer/inner diameter of 260/100nm, which was fabricated with standard 0.184-μm technology, is proposed for the first time to achieve a reset current of about 0.5 mA. The reasons may be that sub-microtube increases the number of electrode edge and thermal efficiency is improved greatly because the thermal density on the edge of sub-microtube electrode is generally the highest.     

Hot-Carrier Stress Effects on GIDL and SILC in 90nm LDD-MOSFET with Ultra-Thin Gate Oxide

Hot-carrier degradation for 90 nm gate length lightly-doped drain （LDD） NMOSFET with ultra-thin （1.4 nm） gate oxide is investigated under the low gate voltage stress （LGVS） and peak substrate current （Isub max） stress. It is found that the degradation of device parameters exhibits saturating time dependence under the two stresses. We concentrate on the effect of these two stresses on gate-induced-drain leakage （GIDL） current and stress induced leakage current （SILC）. The characteristics of the GIDL current are used to analyse the damage generated in the gate-to-LDD region during the two stresses. However, the damage generated during the LGVS shows different characteristics from that during Isub stress. SILC is also investigated under the two stresses. It is found experimentally that there is a linear correlation between the degradation of SILC and that of threshold voltage during the two stresses. It is concluded that the mechanism of SILC is due to the combined effect of oxide charge trapping and interface traps for the ultra-short gate length and ultra-thin gate oxide LDD NMOSFETs under the two stresses.     

Degradation of Ultra-Thin Gate Oxide NMOSFETs under CVDT and SHE Stresses

Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT)stresses are studied using NMOSFET with 1.4- nm gate oxides. The degradation of device parameters and the degradation of the stress induced leakage current (SILC) under these two stresses are reported. The emphasis of this paper is on SILC and breakdown of ultra-thin-gate-oxide under these two stresses. SILC increases with stress time and several soft breakdown events occur during direct-tunnelling (DT) stress. During SHE stress, SILC firstly decreases with stress time and suddenly jumps to a high level, and no soft breakdown event is observed. For DT injection, the positive hole trapped in the oxide and hole direct-tunnelling play important roles in the breakdown. For SHE injection, it is because injected hot electrons accelerate the formation of defects and these defects formed by hot electrons induce breakdown.     

Performance Improvement of Organic Thin Film Transistors Based on Gate Insulator Polymethyl-Methacrylate-co-Glyciclyl-Methacrylate

Organic thin transistors （OTFTs） on indium tin oxide glass substrates are prepared with polymethyl-methacrylate-co-glyciclyl-methacrylate （PMMA-GMA） as the gate insulator layer and copper phthalocyanine as the organic semiconductor layer. By controlling the thickness, the average roughness of surface is reduced and the OTFT performance is improved with leak current decreasing to 10^-11 A and on/off ratio of 10^4. Under the condition of drain-source voltage -20 V, a threshold voltage of -3.5 V is obtained. The experimental results show that PMMA-GMA is a promising insulator material with a dielectric constant in a range of 3.9-5.0.     

Mechanism of NBTI Recovery under Negative Voltage Stress

Recovery phenomenon is observed under negative gate voltage stress which is smaller than the previous degradation stress. We focus on the drain current to study the degradation and recovery of negative bias temperature instability (NBTI) with a real-time method. By this method, different recovery phenomena among different size devices are observed. Under negative recovery stress, the drain current gradually recovers for the large size devices and gets into recovery saturation when long recovery time is involved. For small-size devices, a step-like recovery of drain current is observed. The recovery of the drain current is mainly caused by the holes detrapping and tunnelling back to the channel surface which are trapped in oxide. The model of hole detrapping explains the recovery under negative voltage stress reasonably.     

Properties of Seamless W Sub-Micro Electrode Used for Phase Change Memory

In order to improve the reliability of C-RAM devices, a seamless sub-micro W heating electrode in diameter 260 nm is fabricated with standard 0.18 μm CMOS processing line. Then we successfully manufacture a chalcogenide random access memory device using this seamless sub-micro W heating electrode. The results show good electrical performance, e.g. the reset current of 1.3mA and the set/reset cycle up to 10^9 have been achieved.     

Electrical Characteristics of Copper Phthalocyanine Thin-Film Transistors with Polyamide-6/Polytetrafluoroethylene Gate Insulator

Polyamide-6（PA 6）/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors. The same method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices. The fabricated transistors show good electrical characteristics. Ambipolar behaviour is observed even when the device is operated in air.     

Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

Carrier mobifity enhancement from 0.09 to 0.59cm2/Vs is achieved for pentacene-based thin-film transistors （TFTs） by modifying the Hf02 gate dielectric with a polystyrene （PS） thin film. The improvement of the transistor＇s performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HI02 surface, the Stranski- Krastanov growth mode on the smooth and nonpolar PS/HfO2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski-Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility.     

Thermodynamics Properties of Mesoscopic Quantum Nanowire Devices

We investigate the thermodynamics properties of mesoscopic quantum nanowire devices, such as the effect of electron-phonon relaxation time, Peltier coefficient, carrier concentration, frequency of this field, and channel width. The influence of time-varying fields on the transport through such device has been taken into consideration. This device is modelled as nanowires connecting to two reservoirs. The two-dimensional electron gas in a GaAs- AlGaAs heterojunction has a Fermi wave length which is a hundred times larger than that in a metal. The results show the oscillatory behaviour of dependence of the thermo power on frequency of the induced field. These results agree with the existing experiments and may be important for electronic nanodevices.     

Field-effect transistor based on a combination of nanometer film and undoped semiconductor

The metal oxide nanometer film semiconductor field-effect transistor (MONSFET) is reported. In this device, a combination of undoped semiconductor and nanometer film serves as the active layer. When a negative gate-source voltage is applied, electrons from the nanometer film enter into the semiconductor layer to form the conducting channel, and the drain current increases without saturation. This structure makes more materials available for the active layer, and thus suggests a new route to enrich the applications as well as to enhance the performances.     

A Distributed Fibre Bragg Grating Sensor Interrogator Employing a Reformative Arrayed Waveguide Grating

We present an interrogating technique employing a reformative arrayed waveguide grating without output waveguides in combination with a linear charge coupled device. A simple and effective data processing method called area equalized point is used to improve the system resolution. The simulation results show that the wavelength shift of a fibre Bragg grating with temperature can be precisely measured by this interrogation technique. The temperature accuracy and wavelength resolution of the sensor system are smaller than 0.08℃ and 0.8pm, respectively. If the FBG 3dB-bandwidth is 0.2nm with the wavelength spacing between two adjacent FBGs of 1.4 nm, the temperature and wavelength errors caused by crosstalk are respectively 0.01℃ and 0. 1 pm.     

Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

The two-dimensional electron gas distribution in AlGaN/GaN high electron mobility transistors is determined from the solution of the coupled Schr?dinger’s and Poisson’s equations. Considering the piezoelectric effect, the two-dimensional electron gas concentration is calculated to be as high as 7.7×10¹⁹ cm^-3. In order to obtain an understanding of how the two-dimensional electron gas distribution is influenced by dopants in GaN, we observed the two-dimensional electron gas concentration and occupation of sub-bands versus dopant concentration in the GaN layer of an AlGaN/GaN heterostructure. Our results show that the two-dimensional electron gas concentration is slightly increased at higher doping levels in GaN, while the quantum confinement in the AlGaN/GaN heterostructure is weakened with the increase of donor concentration in the GaN layer. Received: 26 May 2001 / Accepted: 23 July 2001 / Published online: 23 January 2002     

Room temperature fabrication Oxide TFT with Y2O3 as a gate oxide and Mo contact

In this investigation, an operating voltage as low as 5 V has been achieved for Oxide TFT with Y₂O₃ as a gate oxide and a-IGZO as an active layer. The OTFT has been fabricated at room temperature using RF sputter. The mobility and threshold voltages are 11.3 cm²/V s and 3.4 V for the device with W/L = 0.8, respectively. The annealing at 400 °C in N₂ containing 5% H₂ ambient has been utilized to improve the electrical performance of TFT. The on-off current which is determined by gate dielectric has been observed to be 10⁴. It has also been observed that the dielectric properties of gate oxide deteriorate on annealing. The dielectric constant of Y₂O₃ is observed in the range between 5.1 and 5.4 measured on various devices.     

Continuous tuning of the threshold voltage of organic thin-film transistors by a chemically reactive interfacial layer

For the design and manufacture of complex integrated circuits, control over the threshold voltage of the transistors is essential. In the present contribution, we present a non-invasive method to tune the threshold voltage of organic thin-film transistors after device assembly over a wide range without any significant degradation of the device characteristics. This is realized by incorporating a thin, chemically reactive siloxane layer bonded to the gate oxide. This results in threshold voltages of around 70 V in the as-prepared devices. By exposing a transistor modified in this way to ammonia at different concentrations, the threshold voltage can be tuned in steps of only a few volts. This treatment affects only the charge density at the semiconductor–dielectric interface, leaving the overall shape of the transistor characteristics and the charge-carrier mobility largely unaltered.     

Fabrication of an Integrated Pixel with an Organic Light-Emitting Diode Driven by Copper Phthalocyanine Organic Thin Film Transistors

An organic integrated pixel with organic light-emitting diodes （OLEDs） driven by organic thin film transistors （OTFTs） is fabricated by a greatly simplified processing. The OTFTs are based on copper phthalocyanine as the active medium and fabricated on indium-tin-oxide （ITO） glass with top-gate structure, thus an organic integrated pixel is easily made by integrating OLED with OTFT. The OTFTs show field-effect mobility of 0.4cm^2/Vs and on/off ratio of 10^3 order. The OLED is driven well and emits the brightness as large as 2100cd/m^2 at a current density of 14.6 μA /cm^2 at -19.7 V gate voltage. This simple device structure is promising in the future large-area flexible OLED displays.     

Fabrication of a graphene field effect transistor array on microchannels for ethanol sensing

A new approach to the fabrication of back-gated graphene FET (field effect transistor) arrays on microchannels was investigated. Narrow walls fabricated on a substrate with SU-8 (a negative photoresist), with top metal electrodes were pressed onto another silicon/SiO₂ substrate with predeposited graphene pieces such that the electrodes came into contact with graphene pieces and formed the source and drain contact. The SU-8 narrow walls with the top metal layer were fabricated by the conventional lift-off process. The graphene pieces were reduced chemically from graphite oxide. The I_DS changed immediately by more than 17% when the device was exposed to an ethanol atmosphere. The current recovered very well after the ethanol gas was pumped out. The SU-8 microchannels served as gas flow passages that helped the ethanol vapor reach the sensitive region of the device: the graphene channel. This work provides a convenient way of constructing back-gated graphene FETs for sensing applications. This method could potentially be scaled up for mass production.     

Spectroscopic trace-gas sensor with rapidly scanned wavelengths of a pulsed quantum cascade laser for in situ NO monitoring of industrial exhaust systems

Development of a pulsed quantum cascade laser (QCL)-based spectroscopic trace-gas sensor for sub-part-per-million detection of nitric oxide (NO) and capable of monitoring other molecular species such as CO₂, H₂O, and NH₃ in industrial combustion exhaust systems is reported. Rapid frequency modulation is applied to the QCL to minimize the influence of fluctuating non-selective absorption. A novel method utilizes only a few laser pulses within a single wavelength scan to probe an absorption spectrum at precisely selected optical frequencies. A high-temperature gas cell was used for laboratory evaluation of the NO sensor performance. A noise-equivalent sensitivity (1) of 100 ppb × m/ at room temperature and 200 ppb × m/ at 630 K was achieved by measuring the NO R(6.5) absorption doublet at 1900.075 cm^–1.