Optical coefficients of Hg1 − x − y Cd x Eu y Se crystals

Optical properties of Hg_{1 ? x ? y} Cd _x Eu _y Se crystals grown by the Bridgman method have been investigated based on the independent reflectance and transmittance measurements, which were performed on a Nicolet 6700 spectrometer at T = 300 K in the wavelength range 0.9 ≤ λ ≤ 26.6 μm. The values of refractive index n, absorption index k, and absorption coefficient α have been determined for the crystals studied. Based on the dependences α = f(hν), the presence of direct allowed interband optical transitions in the crystals is established and the band-gap values are determined. The influence of temperature on the transmittance and band gap are investigated in the range T = 114–300 K.     

Cathodoluminescence spectra of Cd1−x Zn x Te solid solutions

An investigation is made of the cathodoluminescence, electrical properties, and structural features of crystals of Cd_1−xZn_xTe solid solutions with composition x ranging from 0.02 to 0.20 mole fraction as compared with CdTe and ZnTe. The main bands of the cathodoluminescence spectra are identified within the range 500–2700 nm. The role of oxygen in Cd_1−xZn_xTe cathodoluminescence is shown. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 1, pp. 96–100, January–February, 2000.     

Studies on the synthesis and characterization of Zn1− x Cd x S and Zn1− x Cd x S:Mn2+ semiconductor quantum dots

Quantum dots (3–4?nm) of Zn_{1? x} Cd _x S (both free of Mn²⁺ and with Mn²⁺ incorporated) were synthesized through a novel solvothermal-microwave irradiation technique. Detailed structural analysis of the Zn_{1? x} Cd _x S and Zn_{1? x} Cd _x S:Mn²⁺ (x?=?0, 0.25, 0.5, 0.75 and 1) materials was carried out using powder X-ray diffraction technique. For all the compositions, the crystallite size was controlled to less than 1.5?nm. The optical energy gap for Zn_{1? x} Cd _x S was found to vary from 3.878 to 2.519?eV and for Zn_1?x Cd _x S:Mn²⁺ it varies from 3.830 to 2.442?eV when x is increased from 0 to 1. Overall, the optical energy gap could be tuned from a minimum of 2.442?eV to a maximum of 3.878?eV. DC conductivity analysis (from 40°C to 150°C) and electrical energy gap analysis for all the compositions were also performed. The dc conductivity for Zn_{1? x} Cd _x S solid solutions varies from 0.3840?×?10^?10 to 8.7782?×?10^?10?mho/m at 150°C and for Zn_{1? x} Cd _x S:Mn²⁺ it varies from 0.5751?×?10^?10 to 9.8078?×?10^?10 mho /m at 150°C (for x?=?0 to x?=?1). The method of synthesis and the results observed in this investigation may assist in the fabrication of optical devices when the required operational performance falls under the range observed in the study.     

Properties of Hg implanted Hg1−x Cd x Te infrared detectors

Experimental performance parameters of Hg implanted Hg_1?x Cd _x Te photovoltaic detectors are analyzed. At 77K, for 8–14 μm band, a comparison is made between performances and theoretical ultimate diffusion limits in low frequency direct detection. Experimental features are well-explained by a model based on the Auger band-to-band process for carrier recombination. Peak detectivities exceeding 10¹¹ cm Hz^1/2W^?1, external quantum efficiencies as high as 90%, and zero-bias resistance-area products better than 1 Ω·cm² have been achieved in devices with 12 μm cutoff wavelengths. In the 3–5 μm band performances are far from the diffusion limit. Notwithstanding, at 77K zero-bias resistance-area products are better than 10⁴Ω·cm² and detectivities of the order of 10¹² cm Hz^1/2W^?1 were observed at 5 μm. Predominant generation-recombination contribution are present at room temperature in 1–1.3 μm photodiodes whose detectivities, primarily limited by the Johnson noise, at 1.3 μm are higher than 10¹¹ cm Hz^1/2W^?1 at 300 K. The high frequency response of the photodiodes is also discussed. Response times as low as 0.5 ns are reached despite some limitations arising from the implanted layer sheet resistance.     

LaAg x In1−x

The structures of LaAg _x In_1–x alloys withx=0.75, 0.89 are determined by neutron diffraction on powder samples. The space group isI4/mmm (D _4h ^/17 ). The lattice constants splitting, the order parameter and the mean square vibrational amplitudes of the atoms are given in the temperature range from 20 KT300 K.     

ODMR Study of Zn1−x Mn x Se/Zn1−y Be y Se and (Cd1−x ,Mn)Te/Cd1−y Mg y Te Diluted Magnetic Semiconductor Quantum Wells

The effects of microwave pumping with a frequency of 60 GHz on the magneto-optical properties of diluted magnetic semiconductors (DMSs) are studied in (Zn,Mn)Se/(Zn,Be)Se and (Cd,Mn)Te/(Cd,Mg)Te quantum wells. Resonant heating of the Mn²⁺ ions in the electron spin resonance conditions leads to an increase in the Mn-spin temperature, which exceeds the bath temperature by up to 5.2 K, as detected by the shift of exciton emission line and decrease of its integral intensity. Nonresonant heating mediated by free carriers is also observed through variation of the polarization degree of emission. Direct measurements of spin–lattice relaxation times for both materials using time-resolved optically detected magnetic resonance (ODMR) technique have been performed. The mechanisms of ODMR in nanostructures of DMSs are discussed.     

Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

Photosensitive In-n ⁺-CdS-n-CdS _x Te_{1 ? x} -p-Zn _x Cd_{1 ? x} Te-Mo film structures based on II–VI semiconductors and operating in the wavelength range λ = 0.490–0.855 μm have been fabricated. These structures in the forward current direction at high bias voltages operate as injection photodiodes and exhibit a high integrated sensitivity S _int ≈ 700 A/lm (14500 A/W) at room temperature. It has been found that, in the fabricated structures at low illuminance levels and low forward bias voltages (0.05–0.50 V), the diffusion and drift fluxes of nonequilibrium charge carriers are directed toward each other. This effect leads to the sign reversal of the photocurrent, which makes it possible on the basis of these structures to create selective photodetectors with injection properties. In the reverse direction of the photocurrent, these structures also operate in the mode of internal amplification of the primary photocurrent, but the integrated sensitivity in this mode is considerably less than that in the forward current direction.     

Magnetism of colossal magnetoresistance material Fe1−x Cd x Cr2S4

The magnetism of the colossal magnetoresistance material FeCr₂S₄ was studied through substitution by nonmagnetic element Cd. With the increase of Cd content, the high-field magnetization measured at 5 K increases, demonstrating a ferromagnetic Cr–Cr interaction in CdCr₂S₄. As comparing with the anti-ferromagnetic material ZnCr₂S₄, it is deduced that the ferromagnetic interaction in CdCr₂S₄ is favored by its larger Cr–Cr distance. On the other hand, due to Cd substitution, the low-field magnetization irreversibility between zero-field-cooling and field-cooling magnetization weakens with the increase of Cd content and disappears at last when x = 1 in the Fe_1?x Cd _x Cr₂S₄ (0 ≤ x ≤ 1.0) system. By taking account of the single-ion anisotropy of the ferrous ion on the tetrahedral site, the picture of irreversible magnetic behavior induced by magnetic anisotropy is examined.     

Negatron effects in CdSe1 − x Te x and ZnS1−x Se x films

Various negatron effects in films of alloys of II–VI compounds deposited from solutions as a function of the deposition mode and heat treatment are studied. It is found that the negative photocapacitance effect, which was first discovered in ZnS_1?x Se _x films, and the slowly relaxing negative photoelectric effects, which are caused by the transition of electrons located in a nanoscale surface layer from the shallow energy levels of trapping centers to deeper levels with a lower polarizability and by the presence of nanoscale clusters in these materials, which play the role of a “reservoir” for minority charge carriers, occur according to a single mechanism. A model to explain the basic laws of negative photoconductivity in CdSe_{1 ? x} Te _x films deposited from a solution is proposed. Negative residual conductivity is explained in terms of double-barrier relief model, while negative differential photoconductivity is attributed to the presence of nanoscale electric domains.     

Effect of Cd content on the structural characteristic and some physical properties of Zn1−x Cd x Se

The present work focuses on the structural, optical, and electrical properties of Zn_1?x Cd _x Se (0.1≤x≤0.25) compounds. The compounds were synthesized by solid state reaction. X-ray diffraction (XRD) patterns confirm that the samples have cubic single phase (zinc-blende) crystal structure with space group F-43m. The crystal structural parameters were refined by the Rietveld method using the FullProf program. It was found that the lattice parameters increase linearly with increasing the Cd content and obeys Vegard’s law. The refined values of the crystallite size and the bond lengths increase with increasing the Cd content. The energy band gap of the samples has been calculated and it was found that it decreased as Cd increased. The conductivity of the samples increases with increasing both of composition parameter x and temperature, and showing semiconducting behavior.     

Supertransferred Hyperfine Magnetic Fields at 111Cd Impurity Sites in Cd x Fe3−x O4 and Zn x Fe3−x O4

The hyperfine magnetic field at ¹¹¹Cd impurities substituting iron in the mixed spinels Cd _x Fe_3−x O₄ and Zn _x Fe_3−x O₄ has been determined by means of the Perturbed Angular Correlation technique. Compounds with different concentrations x were investigated as a function of temperature. The possibility of determining the lattice location of probes at octahedral or tetrahedral sites through the magnitude of the electric field gradient is analyzed. The measured hyperfine magnetic field at impurities in tetrahedral sites is discussed in terms of the populations of magnetic ions in the nearest neighbor sites. This revised version was published online in September 2006 with corrections to the Cover Date.     

Laser radiation of Cd x Zn1−x S semiconductor targets of the gas diode

The experimental results on the study of radiation of Cd _x Zn_1?x S semiconductor targets (STs) of the gas diode (GD) for the pressure variation from 10^?1 Torr to the atmospheric pressure are presented. Pulses 0.5–1 ns long with an amplitude to 200 kV were applied to the GD cathode. Laser radiation (509 nm) was generated in the ST under a beam of accelerated runaway electrons to a pressure of 2.5 Torr. At atmospheric pressure, generation in the ST was observed in discharge channels when the streamer moved from one ST surface to another. In this case, as the electric fields strength increased, radiation sequentially arose at three spectral lines, 509, 480, and 469 nm. Possible causes of the observed phenomena are considered.     

Photoluminescence properties of Eu3+-doped Cd1−x Zn x S quantum dots

Eu³⁺-doped Cd_1−x Zn _x S (0 ≤ x ≤ 0.5) quantum dots (QDs) have been synthesized using wet chemical precipitation method. X-ray diffraction and transmission electron microscope have been used for the crystallographic and morphological characterization of synthesized nanomaterials. In order to understand the spectral characteristics of doped QDs, N₂-laser induced time resolved spectra have been recorded. Excited state lifetime values for dichromatic emission (red and violet) attributed to ⁵D₀ → ⁷F_J (J = 1, 2) transitions of Eu³⁺ and host lattice transitions have been calculated from the recorded luminescence decay curves. Decay time dependence on the dopant concentration (0.01–10 at. wt% of Cd²⁺) has been studied in detail.     

EXAFS Studies of the Local Structure Around Zn in Cd1−x Zn x Te

X-ray absorption spectroscopy has been used to obtain information on the local structure around Zn atoms in CdTe. The Zn–Te distance is 5% smaller than the Cd–Te bond-length in the bulk, but slightly larger than in pure ZnTe. A similar effect is predicted by FLAPW calculations. This revised version was published online in September 2006 with corrections to the Cover Date.     

On the nature of a lattice vibrational mode at a frequency of 135 cm−1 in Hg1 − x Cd x Te alloys

The vibrational spectrum of a cadmium impurity atom in the HgTe crystal has been calculated using the microscopic theory of lattice dynamics in the approximation of a low impurity concentration. Within this theory, the behavior of the local and quasi-local modes induced upon substitution of the lighter Cd atom for the Hg atom in the region of the zero or very low one-phonon density of states in the HgTe crystal has been considered. It has been found that, apart from the local mode at a frequency of 155 cm^?1, the calculated vibrational spectra exhibit a weak (but clearly pronounced) feature at a frequency of 134 cm^?1, which coincides with the experimentally observed vibrational mode (the “minicluster” mode) at a frequency of 135 cm^?1 in the Hg_{1 ? x} Cd _x Te (x = 0.2–0.3) alloys at 80 K.     

Martensitic transformation in La1−x Yb x Ag1−y In y

The structural phase transformation of La_1–x Yb _x Ag_1–y In _y has been studied on single crystals by low temperature Laue-technique. The martensitic transformation in this pseudobinary intermetallic alloy has to be characterized as a weak orthorhtombic distortion of a single I centered unit cell (c/a1.04;a/b1.006) and a collective slipping or twinning of these cells that gives a fixed orientation between the remaining cubic room temperature structure and the martensitic phase. Above room temperature exists an order-disorder transformation from the CsCl-B2 structure to an at room temperature metastable W-A2 structure. There is no dramatic change in the physical properties of this alloy by substituting La by Yb, so we may approximate our results to LaAg_1–y In _y .This paper is dedicated to Prof. Dr. S. Methfessel on the occasion of his 60^th birthday     

Electronic structure of ordered ferro- and antiferromagnetic phases of Cd1−x Mn x Te semimagnetic semiconductor

Self-consistent, spin-polarized SDF band structure calculations for the ordered ferromagnetic and antiferromagnetic phases of Cd_0.5Mn_0.5Te and MnTe are reported. The electronic structure, the spin-ordering-dependent hybridization mechanism and the nature of optical excitations are discussed. Also, striking differences between cubic and hexagonal phases of MnTe are discussed and explained.     

Orthorhombic symmetry of valence-band states in CdTe/Cd1−x MnxTe quantum wells

A study is reported of the anisotropy in magnetic-field-induced linear polarization in (001) CdTe/Cd_1−x Mn_xTe quantum wells. The observed limiting anisotropy is shown to be due to the low C _2v symmetry of the quantum well. The relations obtained for the C _2v point group are in a good agreement with experiment. Considered on the microscopic scale, the effect is associated with the heavy-hole g-factor anisotropy in the well plane. Fiz. Tverd. Tela (St. Petersburg) 41, 903–906 (May 1999)     

Phase transitions in La1−x CaxMnO3−x/2 manganites

The crystal structure parameters and magnetic and electrical properties of La_1?x Ca_xMnO_3?x/2 reduced manganites with 0≤x≤0.5 are established. These investigations contribute to the understanding of magnetic interactions in manganites without Mn⁴⁺ ions. It is found that these manganites show a long-range antiferromagnetic order up to x=0.09 and transform into spin glasses at 0.09<x≤0.35. The compositions in the range 0.35<x≤0.5 show a strong increase in the spontaneous magnetization and critical point associated with the appearance of spontaneous magnetization and can therefore be viewed as inhomogenious ferromagnets. The magnetic and crystal structure peculiarities of La_0.5Ca_0.5MnO_2.75 are established by the neutron diffraction method. The strongly reduced samples show a large magnetoresistance below the point where the spontaneous magnetization develops. The magnetic phase diagram of La_1?x Ca_xMnO_3?x/2 is established by magnetization measurements. The magnetic behavior is interpreted assuming that the Mn³⁺-O-Mn³⁺ magnetic interaction is anisotropic (positive-negative) in the orbitally ordered phase and isotropic (positive) in the orbitally disordered phase. Introduction of the oxygen vacancies changes the magnetic interaction sign from positive to negative, thereby leading to a spin glass state in strongly reduced compounds. The results obtained reveal unusual features of strongly reduced manganites such as a large ferromagnetic component, a high magnetic ordering temperature, and a large magnetoresistance despite the absence of Mn³⁺-Mn⁴⁺ pairs. In order to explain these results, the oxygen vacancies are supposed to be ordered.