白光LED用红色荧光粉CaSnO3:Eu3+的制备及光学性质

采用水热法制备了CaSnO3:Eu3+红色荧光粉,利用X射线粉末衍射、场发射扫描电镜和荧光光谱对CaSnO3:Eu3+粉末进行了表征.实验结果表明,这种新型的荧光粉可以被紫外光280 nm、近紫外光395 nm和蓝光465nm有效地激发,发射主峰位于614nm.光谱分析结果表明,Eu3+离子在晶体结构中占据了非反演对称...     

白光LED用红色荧光粉KLa（MoO4）2:Eu3+的制备及发光性能

采用水热法制备红色荧光粉KLa(MoO4)2:Eu3+,通过X射线粉末衍射(XRD)、场发射扫描电镜(FE-SEM)和荧光光谱(PL)对样品进行了表征。实验结果表明:pH值是合成样品KLa(MoO4)2:Eu3+的关键因素,当溶液pH值接近7时,荧光粉的纯度较高,分散性良好、粒度均匀、呈规则球形。这种荧光材料可以被紫外光279 nm、近紫外光395 nm和蓝光465 nm有效激发,发射主峰位于617 nm,是一种可应用于白光LED转换用的新型红色荧光粉。     

白光LED用红色荧光粉Gd_2Mo_3O_9∶Eu~(3+)的制备及表征

利用Na2CO3作为助熔剂,采用高温固相反应方法制备了三价铕离子激活的Gd2Mo3O9红色荧光粉。利用XRD和荧光光谱,研究了助熔剂的量、制备时的温度以及激活剂Eu3 的浓度对荧光粉的晶体结构和发光性能的影响。测试结果表明,这种新型的荧光粉可以被紫外光280nm,近紫外光395nm和蓝光465nm有效激发,发射主峰位于613nm,并且证明Eu3 离子在晶体结构中占据了非反演对称中心的位置。395,465nm的吸收与目前广泛应用的紫外和蓝光LED芯片的输出波长相匹配。因此,这种荧光粉是一种可能应用在白光LED上的红色荧光粉材料。     

发光二极管用红色荧光粉SrMoO4:Eu3+的制备和发射性质

采用化学共沉淀法制备了适合于紫外、近紫外、蓝光发光二极管(LED)激发的红色荧光粉SrMoO4:Eu3+.研究了样品的晶体结构和发光性质.结果表明:化学共沉淀法合成的SrMoO4:Eu3+荧光粉为四方纯相,其激发光谱包括一个宽带峰和一系列尖峰,峰值位于280nm(宽带峰中心),395nm,465nm,可以被紫外LED和蓝光LED有效激发.在395nm的激发下,测得发射光谱的强发射峰位于613nm,对应Eu3+离子的5D0→7F2跃迁.Eu3+离子掺杂浓度的改变对基质的晶格常数、Eu3+离子在晶体中对称性及发光性能有较大影响.通过对比不同掺杂浓度Eu3+离子的发射谱,发现在SrMoO4基质中Eu3+离子掺杂存在浓度猝灭现象,其最佳掺杂浓度为15%.     

白光LED用红色荧光粉Gd2Mo3O9：Eu3+的制备及表征

利用Na₂CO₃作为助熔剂,采用高温固相反应方法制备了三价铕离子激活的Gd₂Mo₃O₉红色荧光粉。利用XRD和荧光光谱,研究了助熔剂的量、制备时的温度以及激活剂Eu³⁺的浓度对荧光粉的晶体结构和发光性能的影响。测试结果表明,这种新型的荧光粉可以被紫外光280nm,近紫外光395nm和蓝光465nm有效激发,发射主峰位于613nm,并且证明Eu³⁺离子在晶体结构中占据了非反演对称中心的位置。395,465nm的吸收与目前广泛应用的紫外和蓝光LED芯片的输出波长相匹配。因此,这种荧光粉是一种可能应用在白光LED上的红色荧光粉材料。     

LED用La2(WO4)3∶Eu3+红色荧光粉合成及光谱性能

 采用水热法并进行热处理成功合成了Eu3+掺杂La2(WO4)3红色荧光粉.通过粉末X射线衍射、扫描电子显微镜,以及能谱来表征荧光粉的晶体结构、颗粒大小、形貌及成分|用激发光谱和发射光谱以及荧光衰减曲线来表征荧光粉的荧光性能.X射线衍射分析确认了水热的前驱体和后期热处理的样品主要相分别为三斜晶系的La2W2O9和单斜晶系的La2(WO4)3.激发光谱表明La2(WO4)3∶Eu3+荧光粉样品在395 nm处有一个最强的吸收峰,与紫外InGaN LED芯片发射波长相匹配|而且La2－xEux(WO4)3荧光粉在395 nm激发下有强红光发射.因此,La2－xEux(WO4)3荧光粉有望成为新一代白光LED用的红色荧光粉.     

红色荧光粉MMoO4:Eu3+ (M=Ca,Sr,Ba)的水热合成及光谱性质

采用水热合成法制备了红色荧光粉MMoO4:Eu3+ (M=Ca,Sr,Ba),用XRD、SEM、荧光激发和发射光谱对其物相、形貌以及发光性能进行表征和研究.结果表明,在800℃时可得到MMoO4(M=Ca,Sr,Ba)物相结构,荧光粉粒径小且粒度分布均匀.分别以395 nm的近紫外光和465 nm的蓝光激发样品,MMoO4:Eu3+(M=Ca,Sr,Ba)荧光粉发红光,对应于Eu3+的4f-4f跃迁,其中以616nm发光最强.荧光粉在395nm和465nm的吸收分别与紫外光和蓝光LED芯片的发射相匹配.     

白光LED用红色荧光粉α-Gd2(MoO4)3:Eu的制备及其发光性能研究

以Gd2O3,MoO3,Eu2O3为原料,采用传统的高温固相反应方法制备了一种新的白光LED用红色荧光粉材料α相Gd2(MoO4)3:Eu.利用XRD,SEM,激发和发射光谱对其进行了研究.分析了助熔剂和激 .活剂对样品的晶体结构,表面形貌和发光性能的影响.结果表明这种荧光粉可以被近紫外光(395 nm)和蓝光(465 nm)有效激发,发射峰值位于613 nm(Eu3 离子的5D0→7F2跃迁)的红光,激发波长与目前广泛使用的蓝光和紫外光LED芯片相符合.因此,三价Eu离子激活的α相Gd2(MoO4)3是一种可能应用在白光LED上的红色荧光粉材料.     

红色荧光粉NazCa1-x-2y-zBiyMoO4∶Eu3+x+y发光研究

采用高温固相法制备系列红色荧光粉Naz Ca1-x-2y-zBiyMoO4 ∶ Eu3+x+y (y,z=0,x=0.24,0.26,0.30,0.34,0.38; x=0.30,y=0.01,0.02,0.03,0.04,0.05,0.06,0.07,z=0; x=0.30,y=0.04,z=0.38).用X射线粉末衍射(XRD)法测试了所制样品晶相结构.采用荧光光谱仪对样品的发光性能进行了表征,结果表明:当Eu3+单掺杂量浓度x=0.30时,荧光粉(Ca0.70 MoO4∶Eu3+0.30)的发光强度最强;当Eu3+-Bi3+共掺杂量浓度y=0.03时,电荷迁移带(CTB)强度达到最强,而对于Eu3+特征发射峰,当共掺杂浓度y＜0.03时,位于393 nm处的激发峰强度比464 nm强,共掺浓度y＞0.03时,464 nm峰比393 nm峰强,共掺浓度为y=0.04时,393和464 nm处两峰位置强度都达到最强.作为电荷补尝剂的Na2 CO3掺入上述荧光粉中后,荧光粉激发和发射强度明显地增强.结果表明,通过调节Bi3+ /Eu3+掺杂比例可以改变位于近紫外光393 nm和蓝光区464 nm处激发光相对强度.     

水热法合成LuVO4:Eu3+红色荧光粉及其光谱性能研究

利用水热法经过或未经过进一步热处理合成LuVO4:Eu3+亚微米(或纳米)荧光粉。通过X射线粉末衍射、扫描电子显微镜、光致发光光谱、衰减曲线对所得的荧光粉进行性能表征。LuVO4:Eu3+荧光粉的激发光谱在275 nm的吸收峰主要来源于Eu→O电荷跃迁,Eu3+的f-f跃迁在紫外和可见光区域有395 nm和466nm两个强峰。从最佳掺杂摩尔分数的LuVO4:8%Eu3+荧光粉中观察到Eu3+在619 nm处强烈的发射峰对应于5D0→7F2跃迁。实验结果表明LuVO4:Eu3+可作为潜在的红色荧光粉应用于显示与照明领域。     

Fine structure and isotope shift of the 3s4d 3 D-3s3p 3 P, 3s5d 3 D-3s3p 3 P and 3p 2 3 P-3s3p 3 P Transitions of MgI

Summary We report the measurements of the³ D(3s4d)-³ P(3s3p)³ D(3s5d)-³ P(3s3p), and³ P(3p ²)-³ P(3s3p) transition frequency of MgI, the fine-structure separation and isotope shift between²⁴Mg and²⁶Mg. The measurements have been performed in a metastable atomic beam; a good agreement is found for data already existing in the literature. The accuracy of the measurements reported in this paper is mainly limited by the Doppler broadening of theI ₂ transitions used as a reference and by the precision in the knowledge of the related wavelengths.     

LaGaO3:RE3+(RE3+=Eu3+,Ho3+)的光谱

本文用固态反应合成了钙钛矿型的LaGaO3和LaGaO3:RE3+(RE3+=Eu3+,Ho3+)荧光体,并观察了物相随不同的激活离子浓度的变化。测量了化合物在室温下的反射光谱,激发光谱和荧光光谱。研究了Eu3+的D0→7F2和Ho3+的5S2→5I8的荧光强度与激活离子浓度的关系,发现了浓度猝灭,并得到了最大荧光强度的浓度值。     

The gas phase infrared band contours of s-triazine and s-triazine-d3: The fundamentals of C3N3H3 and C3N3D3 and some overtone and combination bands of C3N3H3

The systematic application of band contour techniques to account for most of the observed features of the ir spectra of s-triazine and s-triazine-d₃ have been made as well as a critique as to the limitations of such methods. The experimental and computer methods used to study the gas phase infrared band contours of s-triazine and s-triazine-d₃ are out-lined. Contours of the five E′ fundamentals of s-triazine have been recorded under moderate resolution and analyzed to give the Coriolis constants $\text{ζ}{}_{\mathrm{i}}{}^{\mathrm{z}}$, i = 6–10. The effects of l-resonance are very apparent for ν₈ and ν₉, in the form of holes in the Q branches of these bands. Under the highest resolution available, ν₆ and ν₁₀ also show l-resonance effects. Values of the l-doubling constants $\text{q}{}_{\mathrm{i}}{}^{\mathrm{(+)}}$ were obtained for these four fundamentals. One of the parallel A₂″ fundamentals of C₃H₃N₃ (ν₁₂) has also been studied. It lies close to ν₁₀(E′) and an A × E type of second-order Coriolis resonance may be the cause of the intensity enhancement observed in the inner wings of the ν₁₂ and ν₁₀ bands. Hot bands of the type (ν_i + nν₁₄ ? nν₁₄) have been observed in the contours of ν₈, ν₁₀, and ν₁₂. This is felt to be responsible for the large difference between our observed zeta sum (?1.30) and the theoretical sum (?1.00).The gas phase infrared band contours of the five E′ and 2A₂″ fundamentals of C₃N₃D₃ have also been recorded under moderate resolution. From P-R separations and by computer simulation of the contours, values of the Coriolis constants $\text{ζ}{}_{\mathrm{i}}{}^{\mathrm{z}}$ have been obtained for the E′ modes. The effects of l-resonance have been observed for ν₈(E′) and ν₁₀(E′) and values of the l-doubling constants $\text{q}{}_{\mathrm{i}}{}^{\mathrm{(+)}}$ have been estimated. An extensive series of hot bands of the type (ν₁₂ + nν₁₄ ? nν₁₄) has been observed in the contour of the ν₁₂ (A₂″) fundamental. The mass effect on the Coriolis constants has been discussed.Infrared band contours of the overtone 2ν₇ and seven degenerate E′ combination bands of C₃N₃H₃ have been recorded under moderate resolution. Analysis of these contours using the P-R separation method and computer simulation of the contours has given values of $\text{ζ}{}_{\mathrm{<mtext>eff</mtext>}}{}^{\mathrm{z}}$ for these bands. Fermi resonance between 2ν₇ and ν₆ has been analyzed. The importance of considering both the observed contour as well as the observed frequency when assigning higher tone bands is illustrated.     

Infrared spectra of matrix isolated BH3NH3, BD3ND3, and BH3ND3

The infrared spectra of ammonia-borane, BH₃NH₃, and two of its deuterated isotropic species, BD₃ND₃ and BH₃ND₃, isolated in argon matrix at liquid hydrogen temperature have been measured. Well resolved bands for these three isotopic species have been observed for all the fundamentals. A complete frequency assignment based on C₃v molecular symmetry has been made. A set of force constants have been calculated from the data for the two isotopes BH₃NH₃ and BD₃ND₃ using a valence force field. The agreement between experiment and frequencies calculated from these force constants for the mixed isotopic species, BH₃ND₃, substantiates the present assignment.     

Dielectric investigations of solid solutions SrTiO3-KTaO3 and SrTiO3-KNbO3

The temperature dependences of the dielectric constant and dielectric hysteresis loops in ceramic samples of (1 ? x)SrTiO_3?x KNbO₃ and (1 ? x)SrTiO_3?x KTaO₃ (0 ≤ x ≤ 0.3) solid solutions prepared using different heat treatments have been investigated. Phase diagrams of the studied solid solutions have been constructed in the T-x coordinates. It has been shown that, after quenching of samples (spontaneous cooling at room temperature after long-term heating at the sintering temperature of the ceramic samples), the temperature of the induced phase transition increases because of the weakening of random electric fields associated with nonisovalent impurities due to their “frozen” nonequilibrium redistribution. For small concentrations x, strong dielectric relaxation is observed in the temperature range of 150–250 K. A model of relaxing centers, which is based on the local charge compensation of heterovalent impurities, has been proposed.     

Ba3La(BO3)3基质中Tb3+的光致发光

以高温固相法合成了Ba3La(BO3)3∶Tb3 发光材料。在254nm紫外光激发下,研究了Ba3La(BO3)3∶Tb3 的激发光谱、发射光谱、发光强度与Tb3 浓度的关系。确定了Ba3La(BO3)3基质中Tb3 的自身浓度猝灭机理;探讨了助熔剂LiCO、敏化剂Ce3 、Bi3 的加入对荧光粉的发光强度的影响。     

Terahertz Vibrational Modes in CH3NH3PbI3 and CsPbI3 Perovskite Films

JETP Letters - Films of CH3NH3PbI3 organometallic perovskite, which is currently considered as a promising basic material for new-generation solar cells, as well as films containing CsPbI3...     

Modulated magnetic structures of ErPb3, HoPb3, ErTl3 and HoTl3

Neutron diffraction experiments have been carried out on the magnetically ordered phases of ErPb₃, HoPb₃, ErTl₃ and HoTl₃. The magnetic moments were found to be sinusoidally modulated with a propagation vector of (0, 0.2, 0.5) for the Pb-compounds and (0.38, 0.38, 0.16) for the Tl-compounds.Work supported by the Bundesministerium für Forschung und Technologie     

CH_3NH_3 Formed by Electron Injection at Heterojunction Inducing Peculiar Properties of CH_3NH_3PbI_3 Material

The effect of formed CH_3NH_3 at the heterojunction on properties of CH_3NH_3PbI_3 material is investigated based on experiment and theoretical calculation. Our calculation results show that the giant dielectric constant, anomalous hysteresis and long-lasting polarization for CH_3NH_3PbI_3 originate from the formed CH_3NH_3 at the heterojunction. It is found that the induced weak EPS by the reorientation of CH_3NH_3 sub-group along the built-in electric field enables us to effectively increase the ordering of entire lead-halide framework. In addition, the heterojunction has an advantage of channel separation between carrier transport and electron diffusion. These properties of the heterojunction are the main origin of the high efficiency of CH_3NH_3PbI_3 solar cells.