基于同步载波提取的光纤传感器相位生成载波解调方法

利用3×3耦合器和法拉第旋转镜等光学元件,构造了一个基于迈克尔逊干涉系统的光纤振动传感器.使用外调制的方法对传输光进行相位生成载波调制,并将该光纤振动传感器应用于长距离的安全监测中.通过对该传感器的干涉输出信号进行贝塞尔展开分析,发现干涉输出信号中含有与外调制所使用的载波频率相同的信号成分.因此,使用一个中心频率为载波频率且通带很窄的带通滤波器,可以同步地提取载波信号.同步提取的载波信号用于干涉输出信号的相位生成载波被动零差解调,可以得到作用于光纤振动传感器上的外界振动信号.本文提出了从输出信号中同步提取载波的方法,通过理论推导得出了该方法的可行性,并且通过软件仿真和实验验证了该理论的正确性.文中还对提取的载波受低频信号干扰,造成其幅度不稳定的现象进行分析并提出了解决方法.研究表明,同步载波提取法适用于相位调制器与干涉信号输出端距离较远,相位生成载波解调需要的同源载波获取较困难的情况.     

调制激光致硅晶圆载流子辐射扫描成像试验研究

建立了调制激光诱发硅晶圆少数载流子密度波一维模型, 仿真分析了少数载流子输运参数对调制激光诱发载流子辐射信号频域响应的影响. 利用调制激光诱发载流子辐射扫描成像系统对含有表面划痕的硅晶圆进行了扫描成像试验研究. 通过少数载流子密度波模型与多参数拟合方法反求得到了扫描区域的输运参数二维分布图. 该方法得到的少数载流子寿命与利用传统光电导方法测量的少数载流子寿命结果相符; 分析了划痕对载流子输运参数造成的影响, 与光电导方法比较, 该方法可以测量不同位置的全部载流子输运参数且分辨率高.     

Electron scattering mechanisms in indium-tin-oxide thin films prepared at the various process conditions

The carrier concentrations and mobilities of indium-tin-oxide (ITO) thin films by DC magnetron sputtering at the various process conditions were measured by means of the Hall technique. The relationship between the carrier concentration and mobility showed two distinct features: (i) roughly up to the carrier concentration of 9.0 × 10²⁰/cm³, both the carrier concentration and mobility increased together; (ii) above the carrier concentration of 9.0 × 10²⁰/cm³, the carrier mobility decreased as the carrier concentration further increased. The distinct behavior of the carrier concentration and mobility was due to the transition of the dominant electron scattering mechanism. ITO thin film with a low degree of crystallinity was governed by the grain boundary scattering. However, the ionized impurity scattering was dominant in ITO thin film with a high carrier concentration over 9.0 × 10²⁰/cm³. The overall characterizations related to the carrier concentration and mobility were also performed using X-ray diffractometer, UV-vis-NIR spectrometer, scanning electron microscope, atomic force microscope.     

Voltage-induced metal-insulator transition in polythiophene field-effect transistors

We have extensively studied the carrier transport in regio-regular polythiophene field-effect transistors (FETs) from room temperature to 4.2 K. At low temperatures, Zabrodskii plots (dlnsigma/dlnT) demonstrate that the gate voltage and source-drain voltage combine to induce the insulator-to-metal transition at a carrier density of 5x10(12) cm-2. The carrier transport in the insulating regime is well described by phonon assisted hopping in a disordered Fermi glass with Coulomb interaction between the hopping charge carrier and the opposite charge left behind, as described by Efros and Shklovskii.     

大剪切电子散斑干涉的载频调制与位移场测量

将电子散斑干涉场的载波调制引入到大剪切电子散斑干涉中,通过对参考物的微小偏转引入载波条纹;利用傅里叶变换法,解调出了变形场的相位,从而实现了物体变形场的精确测量。讨论了大剪切载频的调制机理,理论分析表明,调制条纹的空间频率与参考面偏转的角度成正比;因此,控制参考面的偏转角度可实现不同位移量系统的调制。利用中心加载周边固定圆盘进行了典型实验,实验结果证明在大剪切电子散斑干涉技术中可以通过参考面的旋转高质量地实现电子散斑干涉条纹的调制,求解位移场。该系统具有系统简单,不需要专门引入参考光,条纹质量好等优点。该技术可扩展电子散斑干涉的应用范围,有一定的实际应用价值。     

Noise improves modulation detection by cochlear implant listeners at moderate carrier levels

Envelope detection and processing are very important for cochlear implant (CI) listeners, who must rely on obtaining significant amounts of acoustic information from the time-varying envelopes of stimuli. In previous work, Chatterjee and Robert [JARO 2(2), 159-171 (2001)] reported on a stochastic-resonance-type effect in modulation detection by CI listeners: optimum levels of noise in the envelope enhanced modulation detection under certain conditions, particularly when the carrier level was low. The results of that study suggested that a low carrier level was sufficient to evoke the observed stochastic resonance effect, but did not clarify whether a low carrier level was necessary to evoke the effect. Modulation thresholds in CI listeners generally decrease with increasing carrier level. The experiments in this study were designed to investigate whether the observed noise-induced enhancement is related to the low carrier level per se, or to the poor modulation sensitivity that accompanies it. This was done by keeping the carrier amplitude fixed at a moderate level and increasing modulation frequency so that modulation sensitivity could be reduced without lowering carrier level. The results suggest that modulation sensitivity, not carrier level, is the primary factor determining the effect of the noise.     

A fringe carrier technique for unambiguous determination of fringe orders in shearography

Shearography is an interferometric method which measures displacement derivatives. This paper presents a technique which eliminates the ambiguity in shearographic fringe interpretation. The technique is based on generating a carrier fringe pattern. Introduction of the carrier fringes results in the formation of a fringe pattern which has monotonically increasing fringe orders, thus allowing fringe orders to be determined in a straightforward manner and without ambiguity. The phase change due to deformation alone is then obtained by simply subtracting the known undeformed carrier fringe orders from the deformed carrier fringe orders. Elimination of fringe ambiguity has paved a way for automatic data acquisition in shearography.     

Investigation of Cu2ZnSnS4 thin-film solar cells with carrier concentration gradient

To investigate the effect of carrier concentration gradient on Cu₂ZnSnS₄ (CZTS) thin-film solar cells, the properties of CZTS solar cells were studied by numerical method. The photovoltaic performances of carrier concentration gradient CZTS solar cells were calculated by the solutions of Poisson's equation, continuity equation, and current density equation using AFors-Het v2.4 program. The carrier concentration gradient was changed to analyze its effect. Compared with CZTS solar cells without carrier concentration gradient, the photovoltaic performances of CZTS solar cells can be enhanced by using carrier concentration gradient absorber. The carrier concentration gradient can extend the distribution region of built-in electric field, which is beneficial to the drift of photo-generated carriers. However, the carrier concentration gradient also affects the recombination and series resistances of solar cells. When the defect density of CZTS layer is high, the photo-generated carriers are affected significantly by recombination, resulting in slight effect of carrier concentration gradient. Therefore, the defect density should be reduced to enhance the effect of carrier concentration gradient on improving conversion efficiency of CZTS thin-film solar cells.     

结合线性回归的离轴数字全息去载波相位恢复算法

为实现仅用一幅离轴数字全息图便能直接恢复相位,提出一种利用空间载波相移技术(spatial carrier phase shift, SCPS)和线性回归相结合的离轴数字全息去载波相位恢复算法.首先,利用SCPS将一幅离轴数字全息图分为四幅含有载波相移的全息图,其中载波相移由沿行、列两个方向的正交载波所引入;然后,将四幅载波相移全息图作为输入,将所求物体相位和两个正交的载波作为未知量,结合最小二乘法和线性回归同时求出载波和相位信息.相较于已有的去载波技术,本算法无需背景全息图作为参考,便可准确地去除载波,实现高质量的相位重建.本文结合数值仿真和具体实验结果验证本算法的有效性和优越性.     

DPVBi/Alq3基有机发光二极管中载流子复合区移动的研究

制备了以结构ITO/PCBM:PVK(x Wt%,～40nm)/DPVBi(30 nm)/Alq3(30 nm)/Al为基础的一系列有机发光二极管,利用电致发光光谱分析了DPVBi/Alq3基有机发光二极管中载流子复合区的移动.通过氟化锂的阴极修饰,改变了器件的载流子注人情况;通过PCBM的浓度变化,改变了载流子的输运情况,讨论了这些因素对载流子复合区形成的影响.同时通过改变对器件所加的电压,讨论了电压对载流子复合区形成的影响,并分析了其影响的本质.     

硅太阳能电池的调制载流子红外辐射动态响应与参数分析

建立了调制激光诱发硅太阳能电池的少数载流子密度波数学模型,并利用光致载流子辐射检测掺杂浓度、阻抗及载流子输运参数. 对频域响应曲线中的双弯曲效应进行了研究,构建了小交流信号作用的太阳能电池等效电路拓扑结构,仿真分析了不同掺杂浓度、阻抗电阻和载流子传输参数对频响曲线拐点的影响. 通过光致载流子辐射频域扫描实验与多参数拟合检测了单晶硅太阳电池的施/受主浓度、并联电阻和载流子输运参数. 结果表明：光致载流子辐射技术检测大面积太阳能电池频响曲线的双弯曲是由电容效应所引起的,建立的数学模型可定量描述和预测检测结果,并用于测量太阳能电池的掺杂浓度、电阻和载流子输运参数. 关键词： 调制自由载流子辐射 扫频检测 PN结电容 参数测量     

Transient Dynamics of Super Bloch Oscillations of a 1D Holstein Polaron under the Influence of an External AC Electric Field

Theoretical formalism for DC‐field polaron dynamics is extended to the dynamics of a 1D Holstein polaron in an external AC electric field using multiple Davydov trial states. Effects of carrier–phonon coupling on detuned and resonant scenarios are investigated for both phase and nonzero phase. For slightly off‐resonant or detuned cases, a beat between the usual Bloch oscillations and an AC driving force results in super Bloch oscillations, that is, rescaled Bloch oscillations in both the spatial and the temporal dimension. Super Bloch oscillations are damped by carrier–phonon coupling. For resonant cases, if the carrier is created on two nearest‐neighboring sites, the carrier wave packet spreads with small‐amplitude oscillations. Adding carrier–phonon coupling localizes the carrier wave packet. If an initial broad Gaussian wave packet is adopted, the centroid of the carrier wave packet moves with a certain velocity and with its shape unchanged. Adding carrier–phonon coupling broadens the carrier wave packet and slows down the carrier movement. Our findings may help provide guiding principles on how to manipulate the dynamics of the super Bloch oscillations of carriers in semiconductor superlattice and optical lattices by modifying DC and AC field strengths, AC phases, and detuning parameters.     

A novel flotation technique combining carrier flotation and cavitation bubbles to enhance separation efficiency of ultra-fine particles

In this paper, a novel flotation technique that combines nano-scale bubbles generated by hydrodynamic cavitation (HC) and carrier flotation is proposed to promote the flotation efficiency of a high-ash (43%) ultra-fine coal sample (<45 µm). We investigated the mechanism by which cavitation bubbles enhance the separation efficiency of carrier flotation using focused beam reflectance measurements, polarizing microscopy, and extended Derjaguin–Landau–Verwey–Overbeek theory. The carrier particles (polystyrene (PS)) and fine coal were pre-treated in a venturi tube and then floated in a laboratory mechanical flotation cell. The flotation results indicate that the presence of cavitation bubbles significantly improved the carrier flotation performance of high-ash ultra-fine coal. This improvement was attributed to the presence of highly hydrophobic PS, which creates additional gas nuclei in the flotation system. The nano-bubbles, which were produced by the venturi tube and adhered to the fine coal particle surfaces, were conducive to the agglomeration of fine coal particles into large aggregates. Moreover, the nano-bubbles functioned as “bridges” of interaction between the carrier particles and large aggregates of fine coal particles. This paper mainly focused on the effect of carrier (PS) and HC on high-ash fine coal. The influence of different HC intensities on carrier (PS) flotation was discussed. Two models for the interactions between the coal particles, nano-bubbles, and PS during cavitation were proposed and were proved using the E-DLVO theory.     

载波相移云纹干涉法研究

通过对载波技术研究,提出载波相移云纹干涉法,采用该方法可以实现云纹干涉条纹信息的自动识别,给出了灵敏度和载波频率的定量关系式;同时,对载波数字相移云纹干涉法测试的精度进行了系统分析。     

Extraction of periodic signals in chaotic secure communication using Duffing oscillators

This paper presents a novel approach to extract the periodic signals masked by a chaotic carrier. It verifies that the driven Duffing oscillator is immune to the chaotic carrier and sensitive to certain periodic signals. A preliminary detection scenario illustrates that the frequency and amplitude of the hidden sine wave signal can be extracted from the chaotic carrier by numerical simulation. The obtained results indicate that the hidden messages in chaotic secure communication can be eavesdropped utilizing Duffing oscillators.     

Refractive index of high-carrier-doped InGaAs/AlAsSb coupled double quantum wells

The carrier density dependence of the refractive index of Si-doped InGaAs/AlAsSb coupled double quantum wells (CDQWs) was studied. The refractive index of the CDQWs changed due to two effects that arose from: (1) a change in the optical absorption and (2) the carrier plasma effect. The refractive index changes due to these two effects were separately evaluated by experimental methods and found to agree well with reference values obtained by a prism coupling technique. By considering the carrier density dependence of the refractive index of the CDQWs and the fundamental requirements for practical devices, we found that the carrier density of the CDQWs should be low with sufficient optical absorption strength due to intersubband transitions     

Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors

The impact of internal irradiation with secondary Compton electrons, generated by gamma-photons, on the characteristics of III-N/GaN-based devices was explored. N-channel AlGaN/GaN high-electron-mobility transistors (HEMTs) were exposed to gamma-radiation from a ⁶⁰Co source for doses up to 600?Gy. Temperature-dependent electron beam-induced current (EBIC) was employed to measure minority carrier transport properties. For low doses below ～250?Gy, the minority carrier diffusion length in AlGaN/GaN HEMTs is shown to increase by about 40%. This increase is likely due to longer minority carrier lifetime induced by internal Compton electron irradiation. An associated decrease in activation energy, extracted from temperature-dependent EBIC, was also found. The obtained increase in transconductance and decrease in gate leakage current indicate an improvement in performance of the devices after low doses of irradiation. For high doses of gamma-irradiation, above ～300?Gy, the performance of HEMTs showed a deterioration. The deterioration results from the onset of increased carrier scattering due to additional radiation-induced defects, as is translated in a decrease of minority carrier diffusion length.     

Heisenberg principle applied to the analysis of speckle interferometry fringes

Optical techniques that are used to measure displacements utilize a carrier. When a load is applied the displacement field modulates the carrier. The accuracy of the information that can be recovered from the modulated carrier is limited by a number of factors. In this paper, these factors are analyzed and conclusions concerning the limitations in information recovery are illustrated with examples taken from experimental data.     

Carrier–envelope phase stabilization of 5-fs, 0.5-mJ pulses from adaptive phase modulator

We compressed high-power laser pulses to 5 fs and 0.5 mJ using a neon-filled hollow-core fiber and a high-throughput 4f system. The carrier–envelope phase of the two-cycle pulses was measured directly by using their over-one-octave output spectrum. The carrier–envelope phase was stabilized by feedback controlling the grating separation of a stretcher in a chirped pulse amplifier. To the best of our knowledge, this is the first time that carrier–envelope phase locked few-cycle pulses were generated by using an adaptive phase modulator.     

Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions

We present the study involving the dependence of carrier concentration of InN films, grown on GaN templates using the plasma assisted molecular beam epitaxy system, on growth temperature. The influence of InN carrier concentration on the electrical transport behavior of InN/GaN heterostructure based Schottky junctions is also discussed. The optical absorption edge of InN film was found to be strongly dependent on carrier concentration, and was described by Kane's k.p model, with non-parabolic dispersion relation for carrier in the conduction band. The position of the Fermi-level in InN films was modulated by the carrier concentration in the InN films. The barrier height of the heterojunctions as estimated from I–V characteristic was also found to be dependent on the carrier concentration of InN.