Electrical transport in electron beam irradiated polyacetylene

Electrical conductivity of non-doped (CH)_x decreases a little and its activation energy increases a little by the electron beam irradiation. The increase of the electrical conductivity of the irradiated (CH)_x by I₂ doping is not so remarkable compared with that of non-irradiated (CH)_x. The conductivity of heavily irradiated (CH)_x is very low even after halogen dopings.On the other hand, the effect of the electron beam irradiation on the conductivity of previously I₂ doped (CH)_x is much less compared with that doped after the electron beam irradiation. These results are explained tentatively by the role of I₂ molecules in the initial stage of radiolysis and the suppression of the cross-linking.     

High-transmission spectrograph with a large range of simultaneously measured energies of charged particles

Computer simulation has been performed for a high-transmission electrostatic spectrograph, and charged particle energies in the range E_max/E_min = 25 and 50 have been measured simultaneously. The spectrograph has been designed in the form of two coaxial cylinders with plane endface electrodes; the cylinder of a larger diameter has been cut into fragments with a potential that varies according to a linear law. For this device, the geometric and electrical parameters that ensures a beam that focuses in the entire range of recorded energies with the energy resolution interval (0.4–1.1)% are determined in the regime when the object under investigation is placed outside the field.     

Theory of degenerate four-wave mixing in three-level atoms

We derive a theoretical model for phase conjugation in three level atoms. The atoms are assumed to be at rest and the intensities I₁ and I₂ of the pump beams can take arbitrary large values. We calculate the lineshape for a thin optical medium in the case of plane waves and of gaussian beams. In the case of a thick optical medium, we show that the gain saturates if I₁ ≠ I₂.     

Genetic Algorithms for Design of Discrete Phase-only Reconfigurable Array Antennas with Fixed Dynamic Range Ratio

In this paper, we present a new method based on real-coded Genetic Algorithm (GA) with elitist model for optimal design of a reconfigurable symmetrical dual-beam uniformly spaced linear isotropic antenna array with phase-only control of quantized phase shifters. The problem is to find a common amplitude distribution that will generate a pencil beam with zero phases and a flat-top beam with discrete phases of a six-bit discrete phase shifter, without or with pre-fixing the value of dynamic range ratio (|I _max/I _min|) of excitation current amplitude distribution equal to or less than five.     

100 keV质子辐照对空间GaAs/Ge太阳电池光电效应的影响

利用空间环境模拟设备,用固定能量为100keV、注量为1×10⁹—3×10¹²cm^-2的质子,对空间实用GaAs/Ge太阳电池进行了辐照试验.利用伏安(I-V)特性、光谱响应和光致发光(PL)光谱测试,研究分析了电池的光电效应.试验表明,电池的各种电性能参数如短路电流(I_sc)、开路电压(V_oc)、最大输出功率(P_{m< 关键词： GaAs/Ge太阳电池 质子辐照 光电效应}     

Thermocapillary self-focusing of a laser beam: A theoretical analysis

A gaussian laser beam reflected from a thermocapillary liquid surface self-focuses at a distance L from the sample surface at a time-instant t_s after the beginning of the irradiation. The theoretical relation t_s(L) is calculated as a function of the liquid physical properties and the laser power.     

Ablation depth control with 40 nm resolution on ITO thin films using a square,flat top beam shaped femtosecond NIR laser

We reported on the ablation depth control with a resolution of 40 nm on indium tin oxide (ITO) thin film using a square beam shaped femtosecond (190 fs) laser (λ_p=1030 nm). A slit is used to make the square, flat top beam shaped from the Gaussian spatial profile of the femtosecond laser. An ablation depth of 40 nm was obtained using the single pulse irradiation at a peak intensity of 2.8 TW/cm². The morphologies of the ablated area were characterized using an optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS). Ablations with square and rectangular types with various sizes were demonstrated on ITO thin film using slits with varying x–y axes. The stereo structure of the ablation with the depth resolution of approximately 40 nm was also fabricated successfully using the irradiation of single pulses with different shaped sizes of femtosecond laser.     

Focal switch of cosine-Gaussian beams

The focal switch of cosine-Gaussian (CsG) beams passing through a system with the aperture and lens separated is studied analytically and numerically. It is shown that the focal switch of CsG beams can appear not only for the apertured case, but also for the unapertured case. The necessary condition for the focal switch is that truncation parameter α > α_c and the beam parameter β > β_c, α_c, β_c being the corresponding critical values. There exists a maximum of the relative transition height Δz _sw as α varies, and Δz _sw increases with increasing β and decreasing N _w. The normalized axial intensity minimum I _min / I _max decreases with an increase of α and β, and I _min / I _max remains unchanged as N _w varies.     

Power loss mechanisms in small area monolithic-interconnected photovoltaic modules

Power loss mechanisms in small area monolithic-interconnected photovoltaic modules (MIM) are described and evaluated. Optical and electrical losses are quantified and individual loss components are derived for loss mechanisms of small area radial (radius?=?1?mm) pie-shaped six-segment GaAs MIM laser power converter. At low monochromatic homogeneous illumination (G_low?=?1.8?W/cm², λ₀?=?809?nm) conversion efficiency of the cell, designed for a low irradiance, is reduced by 3.7%_abs. due to isolation trench optical losses and by 7.0%_abs. due to electrical losses (mainly perimeter recombination). Electrical losses in a device designed for a high irradiance, result in 18%_abs. decrease of output power under homogeneous monochromatic illumination (G_high?=?83.1?W/cm², λ₀?=?809?nm), while 11.6%_abs. losses are attributed to optical reasons. Regardless the irradiance level, optical losses further increase if the device is illuminated with a Gaussian instead of an ideal flattop beam profile. In this case, beam spillage losses occur and losses due to isolation trenches and reflections from metallization are elevated. On top of that, additional current mismatch losses occur, if individual MIM’s segments are not equally illuminated. For the studied device, a 29?μm off center misalignment of a Gaussian shaped beam (with 1% spillage) reduces the short circuit current I_sc by 10%_abs. due to the current mismatch between segments.     

Polarization-dependent intensity transmittance of optical systems

The intensity transmittance α of a linear nondepolarizing optical system is investigated as a function of the state of polarization of the incident light. For totally polarized incident light the state of polarization is completely described by a single complex variable χ. In the χ-plane, the loci of incident polarizations that experience equal attenuation or amplification [α(χ)=constant] upon passing through the system constitute a family of nonintersecting coaxal circles. The zero-radius point circles of the coaxal family represent two orthogonal polarizationsχ _max andχ _min that pass through the system with maximum and minimum transmittances, respectively. Simple elegant expressions are derived for α in terms of the propertiesχ _max,χ _min;α _max andα _min of the system. When χ is expressed in terms of the azimuth and the ellipticity of the polarization ellipse a generalized version of Malus' law is obtained which is applicable to any optical system. Special cases of optical systems are discussed. The condition that a Jones matrix represents an active system is derived. Such a system may amplify polarization states inside a circular domain in the complex χ-plane and attenuate all other states. The results for totally polarized incident light are used to derive the polarization-dependent intensity transmittance of the system for unpolarized and partially polarized incident light. A new set of three parameters is introduced to describe the state of polarization of partially polarized light. The polarization-dependent intensity transmittance is completely determined by four real quantities which can be measured photo-ellipsometrically.     

On a new method of causing sensitized luminescence in CaF2:Ce:Mn phosphors

Cathode ray irradiation provides a new method of causing sensitized luminescence in the system CaF₂:Ce:Mn. Energy transfer efficiencies (η = I_Mn/I_total, where I_Mn and I_total are the emission intensity corresponding to the characteristic emission of the Mn²⁺ ions and the total cathodoluminescence, respectively) observed in samples with varying concentrations of Ce and Mn and at different temperatures of excitation indicate a near constancy of these values up to 100°C. This result and the result that transfer efficiencies for cathode ray excitation are greater than those for optical excitation are also explained.     

Design optimization of tunneling field-effect transistor based on silicon nanowire PNPN structure and its radio frequency characteristics

Recently, a number of semiconductor devices have been widely researched in order to make breakthroughs from the short-channel effects (SCEs) and high standby power dissipation of the conventional metal-oxide-semiconductor field-effect transistors (MOSFETs). In this paper, a design optimization for the silicon nanowire tunneling field-effect transistor (SNW TFET) based on PNPN multi-junction structure and its radio frequency (RF) performances are presented by using technology computer-aided design (TCAD) simulations. The design optimization was carried out in terms of primary direct-current (DC) parameters such as on-current (I_on), off-current (I_off), current ratio (I_on/I_off), and subthreshold swing (SS). Based on the parameters from optimized DC characteristics, basic radio frequency (RF) performances such as cut-off frequency (f_T) and maximum oscillation frequency (f_max) were analyzed. The simulated device had a channel length of 60 nm and a SNW radius of 10 nm. The design variable was width of the n-doped layer. For an optimally designed PNPN SNW TFET, SS of 34 mV/dec and I_on of 35 μA/μm were obtained. For this device, f_T and f_max were 80 GHz and 800 GHz, respectively.     

Contribution of tilt boundaries to the total energy spectrum of grain boundaries in polycrystals

By measuring temperatures T _w for the transition from the incomplete to complete wetting of grain boundaries in poly- and bicrystals, the width of the spectrum of tilt grain boundaries and their contribution to the total energy spectrum of grain boundaries in polycrystals have been experimentally estimated. It has been shown that the tilt grain boundaries correspond to a rather narrow (only 5–10%) portion in the total energy spectrum of grain boundaries in polycrystals. In metals with a low stacking fault energy (copper, tin, zinc), the tilt grain boundaries belong to 10–20% of the grain boundaries with the highest transition temperatures T _w (hence, with low energies). In a metal with a high stacking fault energy (aluminum), the values of T _w for the tilt grain boundaries lie nearly in the middle between the minimum (T _w,min) and maximum (T _w,max) transition temperatures from the incomplete to complete wetting of grain boundaries. This means that grain boundaries with the structure corresponding to a lower energy than that of the symmetric twin boundaries (or stacking faults) can exist in aluminum.     

Rotations as coherent states of SU(6) quadropole phonons in the SU(3) limit

Analytic expressions for the wavefunctions of the ground-state rotational band for even and odd nuclei are derived in terms of spherical quadropole phonons truncated at N_max phonons. For N_max → ∞ the Bohr-Mottelson rotational states are generated as an asymptotic gaussian distribution of quadropole phonons.     

Si-SiO2膜的椭圆偏振光谱

我们建立了椭圆偏振光谱仪装置,提出一种较简便的测定方法(测I_max,I_min,θ_min,算(ψ,Δ)-λ),并对具有不同厚度氧化硅膜的硅样品进行了测量。还在理论上计算了光谱曲线,与实验结果基本相符。最后,对比了测定膜厚的偏振光谱法与消光法。 关键词：     

Self-pulsation and optical chaos in self-pumped photorefractive BaTiO3

Sinusoidal intensity oscillations of the phase conjugated wave reflected from a self-pumped photorefractive BaTiO₃ crystal have been observed. The oscillation amplitude is shown to be increased by providing optical feedback of the light scattered during grating formation. The oscillation frequency ? can be tuned from 0.024 Hz to 2 Hz by changing the light intensity I₀ of the object beam from 0.7 W/cm² to 100 W/cm². A power law ? ∝ I^β₀ ∝ σ with β = 0.89 was observed over this range of intensities (σ = photoconductivity). Transitions to a chaotically oscillating or a stable reflecting state have been observed at higher power levels or with increased optical feedback. An additional pump beam near the entrance face of the signal beam can decrease the build-up time for the self-pumping process by a factor of five or more.     

Responsivity–dark current relationship of quantum dot infrared photodetectors (QDIPs)

We studied the responsivity–dark current relationship of quantum dot infrared photodetector (QDIP) devices published by several research groups. We found that the dark currents (I_ds) of these devices increased in proportion to the square of responsivity (R). Taking into consideration the photoconductive gain (g), which is considered to be equivalent to the noise gain (g_n), we found that this proportionality was because g (and g_n) is proportional to the square root of I_d. This result indicates that, in order to improve a device’s signal-noise characteristics, it is essential to improve its internal quantum efficiency.     

3D fractalization over natural colloidal microinclusions

Results of micro- and nanodimensional investigations into fractal structures arising in mineral water sediments prepared by the drop method are presented. The qualitative analysis of attendant physical processes makes it possible to formulate conditions for 3D fractalization, which take into account the sizes of colloidal particles, their distances to the center of the drop, and the height of the drop: r _min = R _max = h _max and r _max = R _min = h _min. It is shown that surface tension forces and Coulomb forces make a major contribution to fractalization under normal conditions.     

Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors

In this work, the effects of underlapping drain junction on the performances of gate-all-around (GAA) tunneling field-effect transistors (TFETs) have been studied in terms of direct-current (DC) characteristics including on-current (I_on), off-current (I_off), subthreshold swing (S), and I_on/I_off ratio. In addition, the dependences of intrinsic delay time (τ) and radio-frequency (RF) performances including cut-off frequency (f_T) and maximum oscillation frequency (f_max) on gate–drain capacitance (C_gd) with the underlapping were investigated as the gate length (L_gate) is scaled. A GAA TFET with asymmetric junctions, with an underlap at the drain side, demonstrated DC and RF performances superior to those of a device with symmetric junctions.     

光谱开关与多色光场的奇点光学效应

推导出多色高斯光束和高斯-谢尔模型光束通过杨氏实验双缝传输的谱强度公式.对完全空间相干光和部分空间相干光照明杨氏实验装置出现的光谱开关作了详细研究,并判断其是否属于奇点光学效应. 结果表明：多色场奇点光学效应的判据应当是光谱开关出现时的谱强度极小值S_min=0,而不是总光强极小值I_min=0. 当用多色高斯-谢尔模型光束照明杨氏实验装置时,在近场和远场产生的光谱开关都不属于奇点光学效应. 当用多色高斯光束照明杨氏实验装置时,只有远场产 关键词： 光谱开关 奇点光学效应 完全相干和部分相干 多色光场