纳米粉体对Na2SO4·10H2O过冷及相分层现象的影响

采用物理和化学分散相结合的方法分别制备了Cu-Na2SO4·10H2O,Al-Na2SO4·10H2O及C-Na2SO4·10H2O纳米复合相变储能材料,探讨纳米Cu粉,纳米Al粉及纳米C粉对Na2 SO4·10H2O过冷及相分层的影响,并对CNa2 SO4·10H2O复合相变储能材料的导热系数,热扩散系数,比热,相变潜热及形貌进行分析.结果表明:纳米材料的添加使得Na2 SO4·10H2O的过冷显著降低,分别为1.8℃,2.1℃,1.2℃;纳米Cu粉及纳米Al粉复合相变储能材料相变循环后失效,而纳米C粉复合相变储能材料无明显相分层现象;随着纳米C含量的增加,复合相变储能材料导热系数增高,热扩散系数增高,比热降低,复合相变储能材料在融化和结晶状态下,导热系数都随着温度升高而增大;相变循环50次后的4; C-Na2SO4·10H2O复合材料相变潜热值为188.3 J/g.     

二维石墨烯片增强芒硝基复合相变材料导热性研究

探究了二维石墨烯片(GNPs)对复合相变材料导热性的影响,以芒硝基复合相变材料(SCNa)为原料,制备出石墨烯片增强芒硝基复合相变材料(SCNaG).探讨了GNPs添加量对SCNa相变材料导热率的影响,并对其过冷机理进行了讨论.结果表明:复合相变材料导热系数随着GNPs添加量呈线性增加,当GNPs=0wt;时,相变材料导热系数为0.854 W/(m·K);当GNPs=3wt;时,相变材料导热系数为1.405 W/(m·K);随着GNPs添加量的增大相变材料过冷度先减小后增大,当GNPs=0.5wt;时,过冷度低于纯SCNa相变材料,为2.5℃C,当GNPs=3wt;时,过冷度增大至10.9℃.GNPs的添加量对相变材料相变温度影响不大,相变潜热略有减小.     

硬脂酸/插层高岭石复合相变材料的制备和热性能研究

高岭石(K)是一种常见的黏土矿物,具有低成本、阻燃、多层结构等固有优点。本文采用真空浸渍法将硬脂酸(SA)吸附到插层高岭石(IKL)和二甲基亚砜(DMSO)复合物的孔隙中来制备用于储热的复合相变材料。通过X射线衍射(XRD)、红外光谱(FT-IR)、热重分析(TG)、差示扫描量热法(DSC)、扫描电子显微镜(SEM)和比表面积分析仪(BET)表征了复合材料的热性能、结构和主要组分。由于插层复合物形成后高岭石层间距增大,对SA的吸附率达到32.3%,熔化和凝固潜热值分别为43.36 J/g和43.16 J/g,熔化和凝固温度分别为51.9 ℃和51.7 ℃。此外,该复合相变材料具有较好的热稳定性。由于SA/IKL复合相变材料具有高吸附量、高潜热、良好的热稳定和低成本等优点,因此,其在实际的应用中具有潜在的价值。     

无机盐／微结构陶瓷基复合储能材料的制备工艺和热物理性能

本文讨论了微结构陶瓷/无机盐复合储能材料的制备工艺及其对热物理性能和组织结构的影响.将NaNO2-NaNO3,Na2SO4,Na-BaCO3等无机盐嵌入多孔陶瓷体内的微米级多孔网络中,从而形成显热和潜热复合储能的新型储能材料.这种材料不仅蓄热量大,可以定形且可与流体直接接触换热.文章介绍了混合烧结和熔盐自浸渗两种制备工艺,详细分析了各制备工艺对微结构陶瓷/无机盐复合储能材料性能的影响.对材料进行了TW、DSC热分析和XRD、SEM显微结构分析,得出不同制备工艺下材料的热物理性能,其最大值可达:相变潜热92.67 J/g,比热1.54 J/g·℃,蓄热密度240 J/g(△T=100℃).     

二氧化硅包覆芒硝基相变储能微胶囊制备及性能表征

将四乙氧基硅烷(TEOS)和3-氨丙基三乙氧基硅烷(APTES)作为硅源,芒硝基相变储能微胶囊作为芯材,通过乳液聚合的方法制备了二氧化硅包覆的芒硝基相变储能微胶囊.测得芒硝基相变储能微胶囊的熔化焓和凝固焓分别为136.4 J/g和76.9 J/g,融化和凝固温度分别为23.6℃和17.6℃.微胶囊的核-壳结构减轻了无机水合盐固液分离程度,抑制了相分层现象的发生.在100次循环后,熔化焓为64.3 J/g,具有较好的循环稳定性,可用于热能存储等领域.     

物理法制备芒硝基复合相变材料及其性能研究

以芒硝(Na2SO4· 10H2O)为主相变材料,采用物理共混法,筛选出合适添加辅助材料组成多元混盐体系,制备出相变温度在25℃左右的Na2SO4· 10H2O基复合相变材料,研究了原料配比对相变材料相变温度和相变潜热的影响.通过热重分析、T-history曲线、差示扫描量热法等表征了制备的芒硝基相变储能材料性质.结果表明:二元相变材料相变温度随着Na2CO3·10H2O增加而先降低后增大;相变材料相变潜热密度基本不变.三元相变材料相变温度随着NaCl、KCl、NH4Cl量增加相变温度降低;相变材料相变潜热密度相比于二元体系有所减小,且在一定范围内随着成核剂硼砂含量的增加该体系相变潜热密度基本保持不变,过冷度有明显下降.当Na2SO4· 10H2O量为86.4;、Na2CO3 · 10H2O量为9.6;、NaCl量为4;,对该配方改性添加3;的硼砂和0.1;的羧甲基纤维素钠时,此相变材料的相变温度为24.6℃,过冷度为0.3℃,相变潜热密度为179.6 J/g.     

钾明矾/纤维多孔陶瓷基复合蓄热材料的制备工艺优化

本文以纤维多孔陶瓷为基体,无机水合盐为相变材料,熔融浸渍法制备了复合蓄热材料.通过对制备工艺的优化,得出浸渍方式为完全浸渍,浸渍温度为98 ℃,浸渍时间为12 min的条件下制备出蓄热性能良好的复合蓄热材料,浸渍率高达83.17;.     

新型SiC/SiBCN复合陶瓷的析晶性能

通过热解聚碳硅烷(PCS)和聚硼硅氮烷(PBS)两种有机先驱体混合物,制得非晶态SiC/SiBCN复合陶瓷,然后对复合陶瓷进行高温热处理,研究其析晶规律及影响因素.利用热分析(TG-DTA)、X射线衍射(XRD)及透射电子显微镜(TEM)分别研究先驱体的热解机理,先驱体的组成、热解温度和时间对SiC/SiBCN复合陶瓷结晶性的影响,以及复合陶瓷的微观结构.结果表明,先驱体的组成和热处理温度对复合陶瓷的析晶行为有重要影响.当PBS/PCS=1(w/w),1100 ℃/2 h制得非晶态SiC/SiBCN复合陶瓷;1400 ℃/4 h PCS热解转变的非晶SiC开始结晶,晶粒尺寸～3 nm;1500 ℃/4 h 得到产物的相结构为～10 nm 的SiC纳米晶均匀弥散在PBS热解得到的非晶态SiBCN中;1700 ℃/2 h SiC的晶粒尺寸～16 nm;1800 ℃/2 h非晶态SiBCN开始析晶,SiC晶粒尺寸～35 nm.     

静电纺丝技术制备TiO2/NiO复合中空纳米纤维及光催化性能

采用醋酸镍与钛酸丁酯为前驱体制备壳层纺丝液,芯层选用芝麻油,通过同轴静电纺丝技术,制得醋酸镍-钛酸丁酯/PVP复合纤维,在550℃烧结2h后,得到TiO2/NiO复合中空纳米纤维.研究不同内外推进速度比对复合纤维中空结构的影响,采用XRD对样品的组成进行表征,通过SEM和TEM对样品形貌进行观察,并检测样品在紫外光照射下对亚甲基蓝的催化降解率.结果表明:制得的TiO2/NiO复合中空纳米纤维平均直径为111.6±57.2nm,当内外推进速度比为1∶6时复合纤维的中空结构良好.在90 min紫外灯照射后,对浓度为0.4 mg/L的亚甲基蓝分解率为82.1;,较TiO2纳米纤维和TiO2/NiO复合纳米纤维分别提高了57.2;和13.9;.     

硅藻土/纳米氧化锌/氧化石墨烯复合光催化材料的制备及其光催化性能研究

采用溶胶-凝胶与负压负载法结合,以硝酸锌为前驱物,无水乙醇为溶剂,聚乙二醇为分散剂,硅藻土为载体,制备硅藻土/纳米氧化锌,并与Hummers法制得的氧化石墨烯进行复合,得到硅藻土/纳米氧化锌/氧化石墨烯复合光催化材料,通过SEM、XRD、BET、IR对样品进行了表征分析,研究了硅藻土/纳米氧化锌/氧化石墨烯复合光催化材料的结构、形貌、孔径分布情况,氧化石墨烯的引入对光催化性能的影响.结果表明:硅藻土对纳米氧化锌的负载,采用负压负载方法优于普通负载方法,氧化石墨烯的质量分数为5;时,硅藻土/纳米氧化锌/氧化石墨烯复合光催化材料的2 h的光降解率达到最大值88.7;,比同时间的纯纳米氧化锌高出63;,比硅藻土高出83.3;.     

Calculation of phase diagrams in AlxIn1−xAs/InP,AsxSb1−xAl/InP and AlxIn1−xSb/InSb nano-film systems

The models for calculation of phase diagrams of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. The phase diagrams of the Al_xIn_1−xAs and As_xSb_1−xAl thin films grown on the InP (1 0 0) substrate, and the Al_xIn_1−xSb thin films grown on the InSb (1 0 0) substrate at various thicknesses were calculated. The calculated results indicate that when the thickness of film is less than 1 μm, the strain-induced zinc-blende phase appears, the region of this phase extends with decreasing of the layer thickness, and there is small effect of surface energies of liquid and solid phases on the phase diagrams.     

Elastic properties of GexAsySe100−x−y glasses

The elastic properties of Ge_xAs_ySe_100−x−y (0x30; 10y40) glasses have been studied. The results were analyzed in terms of the dependence on the theoretical mean coordination number (mean number of covalent bonds per atom) m (m=2+(2x+y)×0.01). Three ranges of m (2.1m2.51, 2.51<m2.78, 2.78<m3) were revealed, where different dependencies of elastic moduli (Young’s modulus, shear modulus) and Poisson’s ratio of glasses on m were observed.     

Crystal growth of NdAl3(BO3)4 from K2O/MoO3/Nd2O3/B2O3/KF flux

NdAl₃(BO₃)₄ single crystals were grown by the flux method and the TSSG technique using a K₂O/3MoO₃/B₂O₃/0.5Nd₂O₃/KF flux system. Light-violet clear crystals could be obtained. The effects of fluoride on the growth of NAB crystals were investigated. As the content of KF was gradually increased, the growth form of NAB was changed from the equant to the columnar and the primary crystalline region of NAB was shrinked. At the ratio of KF/K₂O = 0.75, NAB crystals could not be grown.     

Synthesis and structure of new phases of the Am?1Bi2BmO3m+3 (m = 2) type

Three polycrystalline bismuth-containing layered perovskite-like oxides are synthesized by high-temperature solid-state reactions. One of these compounds was described previously, namely, Bi₃Ti_1.5W_0.5O₉, for which the unit cell parameters a = 5.372(5) Å, b = 5.404(4) Å, and c = 24.95(2) Å are determined in this study. The other two compounds, namely, Na_0.75Bi_2.25Nb_1.5W_0.5O₉ with the unit cell parameters a = 5.463(1) Å, b = 5.490(7) Å, and c = 24.78(0) Å and Ca_0.5Bi_2.5Ti_0.5Nb_1.5O₉ with the unit cell parameters a = b = 3.843(2) Å and c = 24.97(6) Å, are synthesized for the first time. The compositions of these compounds are based on the composition of the well-known compound Bi₃TiNbO₉ with a high Curie temperature (T _C = 1223 K), in which bismuth, niobium, and titanium atoms are partially or completely replaced by other atoms. The experimental and calculated interplanar distances determined from the X-ray diffraction patterns of the studied compounds are presented. __________ Translated from Kristallografiya, Vol. 50, No. 1, 2005, pp. 59–64. Original Russian Text Copyright ? 2005 by Geguzina, Shuvaev, Shuvaeva, Shilkina, Vlasenko.     

Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1−xN layers with AlN and AlyGa1−yN monolayers

We propose a new growth scheme of digitally alloyed modulated precursor flow epitaxial growth (DA-MPEG) using metalorganic and hydride precursors for the growth of Al_xGa_1−xN layers with high-Al content at relatively low temperatures. The growth of high-quality, high-Al content Al_xGa_1−xN layers (x_Al>50%) that are composed of AlN and Al_yGa_1−yN monolayers on AlN/sapphire template/substrates by DA-MPEG was demonstrated. The overall composition of the ternary Al_xGa_1−xN material by DA-MPEG can be controlled continuously by adjusting the Column III mole fraction of the atomic Al_yGa_1−yN sub-layer. X-ray diffraction and optical transmittance results show that the AlGaN materials have good crystalline quality. The surface morphology of DA-MPEG AlGaN samples measured by atomic force microscopy are comparable to high-temperature-grown AlGaN and are free from surface features such as nano-pits.     

Vapour epitaxial growth and characterization of InAs1-xPx

The vapour growth of InAs_1-xP_x layers has been carried out by the hydride process. The phosphorus rich part of the system (0.7 ? x ? 1) was especially investigated. Heteroepitaxial deposits of InAs_1-xP_x and InP have been performed on substrates such as InAs, GaAs and GaP. A systematic study of the influence of the substrate orientation on the quality of the layer has been carried out by growth on hemispherical substrates. Preferential planes have been pointed out: (100) and (111) A for InAs, (111) for GaAs and GaP. The band gap variation as a function of the composition has been determined by photoluminescence at 4.2 °K and X-ray diffraction measurements. It fits the equation: E_G(x) eV = 0.425 + 0.722 x + 0.273 x² at 4.2 °K.     

Precipitation of In2O3 nano-crystallites from glasses in the system Na2O/B2O3/Al2O3/In2O3

Glasses in the system Na₂O/B₂O₃/Al₂O₃/In₂O₃ were melted and subsequently tempered in the range from 500 to 700 °C. Depending on the chemical composition, various crystalline phases were observed. From samples without Al₂O₃, In₂O₃ could not be crystallized from homogeneous glasses, because either spontaneous In₂O₃ crystallization occurred during cooling, or other phases such as NaInO₂ were formed during tempering. The addition of alumina, however, controlled the crystallization of In₂O₃. Depending on the crystallization temperature applied, the crystallite sizes were in the range from 13 to 53 nm. The glass matrix can be dissolved by soaking the powdered glass in water. This procedure can be used to prepare nano-crystalline In₂O₃-powders.