Thermal conductance of ballistic point contacts

We study the thermal conductance of ballistic point contacts. These contacts are realized as few nanometer long pillars in so-called air-gap heterostructures (AGHs). The pillar length is orders of magnitude smaller than the mean free path of the phonons up to room temperature. Because of the small dimension and the low density of the pillars, the thermal conductance of the AGHs is several orders of magnitude reduced in comparison to bulk structures. The measurement results are in quantitative agreement with a simple model that is based on the Boltzmann transport equation.     

Quantum galvanomagnetic properties of n-type inversion layers on Si(100) MOSFET

Transverse magnetoconductivity σ_xx and Hall effect in n-type inversion layers of Si(100) MOSFET are measured for various source-drain fields between 0.08 and 40 V/cm under magnetic fields up to 150 kOe at 1.4 K. Conductivity peaks in low Landau levels are in good agreement with theory. Effect of the source-drain field in the magnetoconductivity is found to be very important in higher Landau levels as well as in the appearance of the lowest Landau level peak. Immobile electrons are clearly observed in conductivity bottoms. Electrode geometry effect for Hall effect measurement under strong magnetic fields is discussed.     

Quantum point contacts as heat engines

The efficiency of macroscopic heat engines is restricted by the second law of thermodynamics. They can reach at most the efficiency of a Carnot engine. In contrast, heat currents in mesoscopic heat engines show fluctuations. Thus, there is a small probability that a mesoscopic heat engine exceeds Carnot's maximum value during a short measurement time. We illustrate this effect using a quantum point contact as a heat engine. When a temperature difference is applied to a quantum point contact, the system may be utilized as a source of electrical power under steady state conditions. We first discuss the optimal working point of such a heat engine that maximizes the generated electrical power and subsequently calculate the statistics for deviations of the efficiency from its most likely value. We find that deviations surpassing the Carnot limit are possible, but unlikely.     

High field magnetoconductivity of Si inversion layers

The transverse magnetoconductivity (σ_χχ) of electron inversion layers on (100) Si is measured in magnetic fields up to 220 kG at temperatures from 4.2 to 1.6 K. The dependence of σ_χχ on T, H, and the electric field along the inversion layer suggests that immobile electrons between two Landau subbands are to a large extent localized out of the top of the lower subband. Fine structure, which may be indicative of inhomogeneities of electronic origin, is observed in σ_χχ vs electron density.     

Quantum point contacts on InGaAs/InP heterostructures

For the first time we have observed quantized conductance in a split gate quantum point contact prepared in a strained In_0.77Ga_0.23As/InP two-dimensional electron gas (2DEG). Although quantization effects in gated two-dimensional semiconductor structures are theoretically well known and proven in various experiments on AlGaAs/GaAs and also on In_0.04Ga_0.96As/GaAs, no quantum point contact has been presented in the InGaAs/InP material with an indium fraction as high as 77% so far. The major problem is the comparatively low Schottky barrier of the InGaAs (φ_B≈ 0.2 eV) making leakage-free gate structures difficult to obtain. Nevertheless this heterostructure—especially with the highest possible indium content—has remarkable properties concerning quantum interference devices and semiconductor/superconductor hybrid devices because of its large phase coherence length and the small depletion zone, respectively. In order to produce leakage-free split gate point contacts the samples were covered with an insulating SiO₂layer prior to metal deposition. The gate geometry was defined by electron-beam lithography. In this paper we present first measurements of a point contact on an In_0.77Ga_0.23As/InP 2DEG clearly showing quantized conductance.     

Spin conductance and spin filtering in ferromagnetic semiconductor quantum point contacts

By combining the spin dependent transport properties of the ferromagnetic semiconductors with the basic physics of the quantum point contacts, we investigate the spin polarized transport through ferromagnetic semiconductor quantum point contacts. We find that the spin conductance strongly depends on the spin orientation, the magnitude of the spin splitting energy and the shape of the cross sections of the point contacts.     

Resonantly enhanced nonlinear conductance in long quantum point contacts near pinch-off

We report on a remarkable resonance in the differential conductance of long quantum point contacts (QPCs) that is observed as a precursor to regular quantized transport. This effect is increasingly pronounced in longer QPCs, in which the differential conductance may resonantly exceed 2e2/h. From a study of the experimental characteristics of this feature, we suggest that it may be associated with the formation of a well-resolved energy gap that opens dynamically as a result of enhanced many-body interactions in long QPCs.     

Reprint of : Quantum point contacts as heat engines

The efficiency of macroscopic heat engines is restricted by the second law of thermodynamics. They can reach at most the efficiency of a Carnot engine. In contrast, heat currents in mesoscopic heat engines show fluctuations. Thus, there is a small probability that a mesoscopic heat engine exceeds Carnot's maximum value during a short measurement time. We illustrate this effect using a quantum point contact as a heat engine. When a temperature difference is applied to a quantum point contact, the system may be utilized as a source of electrical power under steady state conditions. We first discuss the optimal working point of such a heat engine that maximizes the generated electrical power and subsequently calculate the statistics for deviations of the efficiency from its most likely value. We find that deviations surpassing the Carnot limit are possible, but unlikely.     

Temperature dependence of conductance and thermopower anomalies of quantum point contacts

It has been shown within the Landauer approach that the presence of the 0.7 anomaly in the conductance of a ballistic microcontact and the respective plateau in the thermopower implies pinning of the potential barrier height at a depth of k _B T below the Fermi level. A simple way of taking into account the effect of electron-electron interaction on the profile and temperature dependence of a smooth one-dimensional potential barrier in the lower subband of the microcontact has been proposed. The calculated temperature dependences of the conductance and Seebeck coefficient agree with the experimental gate-voltage dependences, including the emergence of anomalous plateaus with an increase in temperature.     

Far infrared resonant magnetoabsorption in low density Si inversion layers

The density and temperature dependences of high frequency/resonant field (61.3 cm^-1, 11T) resonant magnetoabsorption data in (100) Si inversion layers at low densities are strikingly different from those observed at lower frequencies/fields. The results, which include a dramatic resonant line narrowing at high fields, are discussed in light of single-electron localization and the possibility of a cooperative electronic transition assisted by the large magnetic field.     

Quantum point contact conductance in ferromagnetic semiconductor/superconductor junctions

An extended Blonder-Tinkham-Klapwijk approach is applied to study how the tunneling conductance in ferromagnetic semiconductor/s-wave superconductor (FS/SC) junction, where the FS region is a quantum wire, is manipulated by the mismatches of the effective mass between the FS and SC, spin polarization in the FS, as well as the strength of potential scattering at the interface. It is demonstrated that in the single-mode case they have different influences on the tunneling spectra.     

Interaction effects in conductivity of Si inversion layers at intermediate temperatures

We compare the temperature dependence of resistivity rho(T) of Si-metal-oxide-semiconductor field-effect transistors with the recent theory by Zala et al. In this comparison, the effective mass m* and g* factor for mobile electrons have been determined from independent measurements. An anomalous increase of rho with temperature, which has been considered as a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance rho(B(axially)) is only qualitatively consistent with the theory; the lack of quantitative agreement indicates that the magnetoresistance is more sensitive to sample-specific effects than rho(T).