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1.
Elementary spin excitations (magnons) play a fundamental role in condensed matter physics, since many phenomena e.g. magnetic ordering, electrical (as well as heat) transport properties, ultrafast magnetization processes, and most importantly electron/spin dynamics can only be understood when these quasi-particles are taken into consideration. In addition to their fundamental importance, magnons may also be used for information processing in modern spintronics.  相似文献   

2.
Stress measurements with sub-monolayer sensitivity are performed to investigate the correlation between mechanical film stress and magneto-elastic anisotropy in epitaxial ferromagnetic monolayers. The magneto-elastic coupling B1 of Fe(1 0 0) films is measured directly. Magnitude and sign of B1 deviate from the respective bulk value. A strain-dependent correction of the magneto-elastic coupling coefficient B1 describes the apparent thickness dependence of B1 for film thicker than 10 nm. For thinner films, the possible contribution of surface corrections is discussed to explain the almost constant B1. The implications of a modified magneto-elastic coupling for the anisotropy of ultrathin films is elucidated.  相似文献   

3.
The formation of Co films on polycrystalline copper in diluted sulphuric acid was investigated by employing cyclic voltammetry (CV), atomic force microscopy, and in-situ magneto-optic Kerr effect (MOKE) techniques. By comparing CV measurements in the pure supporting electrolyte (11 mM K2SO4/1 mM H2SO4) and the cobalt sulphate solution (10 mM K2SO4/1 mM H2SO4/1 mM CoSO4), peaks from voltammetric cycling for copper dissolution, readsorption of dissolved copper ions, cobalt bulk dissolution and oxidation of hydrogen could be resolved. As the electroplating time increases, the size of the Co clusters increases and the deposition of Co corresponds to island growth. The first hysteresis loop occurs at a Co thickness of 0.33 nm in the longitudinal configuration. For films thinner than 7 nm, the Kerr intensity increases linearly because the Curie temperature of the film is well above 300 K.  相似文献   

4.
The magnetic properties of ultrathin films are determined first of all by their structure. The experimental technique giving simultaneously information about the structure and the magnetic behaviour of the film would be optimum. To follow this idea the information about the film structure, obtained from Mossbauer spectra, are discussed.  相似文献   

5.
6.
We report the effect of intermixing of Cu on the magnetic properties of ultrathin Co films deposited on Si(1 0 0). Rutherford backscattering was employed to determine the extent of intermixing, which increased from 7% in an as-grown sample to nearly 23% when annealed at 400 °C. The as-grown sample showed a higher value of magnetization of 530 emu/cm3, which dropped to 20 emu/cm3 on annealing at 400 °C. The low temperature magnetization behavior of the as-grown Co films showed the presence of both positive and negative exchange bias due to the formation of antiferromagentic domains in parallel with ferromagnetic domains. This behavior is explained using the Malozemoff Random Field Model, which predicted values of exchange bias closely matching the present experimental findings.  相似文献   

7.
The elementary surface excitations are studied by spin-polarized electron energy loss spectroscopy on a prototype oxide surface [an oxygen passivated Fe(001)-p(1×1) surface], where the various excitations coexist. For the first time, the surface phonons and magnons are measured simultaneously and are distinguished based on their different spin nature. The dispersion relation of all excitations is probed over the entire Brillouin zone. The different phonon modes observed in our experiment are described by means of ab initio calculations.  相似文献   

8.
The magnetic properties of Au/Ni/Si(100) films with Ni thicknesses of 8–200 Å are studied at T=77 K using a scanning magnetic microscope with a thin-film high-temperature dc SQUID. It is found that the Ni films, with an area of 0.6×0.6 mm, which are thicker than 26 Å have a single-domain structure with the magnetic moment oriented in the plane of the film and a saturation magnetization close to 0.17 MA/m. For films less than 26 Å thick, the magnetization of the film is found to drop sharply.  相似文献   

9.
10.
We describe the construction and operation of an ultrahigh-vacuum system devoted to the study of thin film magnetism. The apparatus includes a growth chamber, where ultrathin films are deposited by molecular beam epitaxy, and a measurement chamber, where they are analyzed by a variety of electron spectroscopies. The electron spin can be controlled by using a fully characterized spin resolved electron gun and polarization analyzers. Test measurements on in situ grown Fe/MgO(001) samples are also presented as illustration of the system performances.  相似文献   

11.
The electronic and magnetic structures of ultrathin films made of a ferromagnetic and a nonmagnetic material are theoretically investigated by means of magnetic dichroism in spin- and angle-resolved core-level photoelectron spectroscopy. How these properties manifest themselves in the photoemission intensities is analyzed with a focus on the interface between film and substrate. The dependence on both exchange and spin–orbit splitting, magnetic ordering, core-level shift and on the thickness of the covering layer are investigated in detail. Ultrathin films of Fe and Pd serve as prototypical systems because of their large exchange and spin–orbit splittings, respectively.  相似文献   

12.
The domain walls in ultrathin ferromagnetic films with uniaxial magnetic anisotropy are investigated theoretically. It is shown that taking account of the magnetodipole and magnetoelastic interactions leads to the appearance of an effective anisotropy with respect to the direction of the normal to the plane of the wall. The existence of a new type of domain walls—“corner” walls, at which the magnetization vector is rotated in the plane making a certain angle, which depends on the film parameters, with the plane of the domain wall and the static and dynamic properties of these walls are investigated. The dependence of the limiting velocity of the domain walls on the film thickness is found. Zh. éksp. Teor. Fiz. 112, 1476–1489 (October 1997)  相似文献   

13.
We discuss the magnetostatic energy of checkerboard domain structures in ultrathin magnetic films (of a few monolayer thickness) and in an atomic monolayer using simple magnetostatic considerations where the easy direction of magnetization is perpendicular to the film. The checkerboard domain size, D, the domain-wall width, ω, the ratio f of the uniaxial surface anisotropy, Ks, to the dipolar energy and the binding energy, (BE), have been calculated numerically with the variational parameter δ and the number of atomic layers, nl, as parameters.  相似文献   

14.
Camley RE  Li D 《Physical review letters》2000,84(20):4709-4712
The temperature dependence of the magnetization in fcc Fe on Cu(100) is calculated using a self-consistent local mean-field theory. The model reproduces an experimental magnetization oscillation as a function of film thickness and supports a picture where the top two layers are ferromagnetically coupled, and the remaining layers are antiferromagnetically coupled. The origin of the puzzling linear temperature dependence in oscillation amplitude is understood as a "surface phenomena" of the antiferromagnetic layer at the Fe/Cu interface. Proximity effects between a thin antiferromagnet with a low Neel temperature and a neighboring ferromagnet with a higher Curie temperature are discussed.  相似文献   

15.
The charge-carrier transport properties of ultrathin metallic films are analysed with ab initio methods using the density functional theory (DFT) on free-standing single crystalline slabs in the thickness range between 1 and 8 monolayers and compared with experiments for Pb films on Si(111). A strong interplay between bandstructure, quantised in the direction normal to the ultrathin film, charge-carrier scattering mechanisms and magnetoconduction was found. Based on the bandstructure obtained from the DFT, we used standard Boltzmann transport theory in two dimensions to obtain results for the electronic transport properties of 2 to 8 monolayers thick Pb(111) slabs with and without magnetic field. Comparison of calculations and experiment for the thickness dependence of the dc conductivity shows that the dominant scattering mechanism of electrons is diffuse elastic interface scattering for which the assumption of identical scattering times for all subbands and directions, used in this paper, is a good approximation. Within this model we can explain the thickness dependences of the electric conductivity and of the Hall coefficient as well as the anomalous behaviour of the first Pb layer.Received: 19 September 2003, Published online: 8 December 2003PACS: 73.50.Jt Electronic transport phenomena in thin films: Galvanomagnetic and other magnetotransport effects - 73.61.At Electrical properties of specific thin films: Metals and metallic alloys - 73.20.At Electron states at surfaces and interfaces - 71.15.Mb Density functional theory  相似文献   

16.
郭星原  杨鹤佳  开来  梁军请 《大学物理》2022,41(3):32-35+40
元激发或准粒子用于描述宏观物体处于低激发态时的物理性质.不同物理模型对应着不同准粒子,这些独立的准粒子的集合体,使本来复杂的多体问题变得易于处理.在三维及以上的空间中,按照粒子的自旋属性,自旋为半奇数的符合费米-狄拉克统计,自旋为整数的符合玻色-爱因斯坦统计.1977年,Leinaas和Myrheim在研究二维空间拓扑性质后,提出一种遵循分数统计规律的准粒子——任意子,随着二维物理系统的发展,任意子从纯理论研究成为实际研究对象.  相似文献   

17.
18.
Magnetic garnet films of composition (Y,Bi)3(Fe,Al)5O12 have been grown by liquid phase epitaxy on [111] and [110] oriented substrates of gadolinium gallium garnet. The domain wall resonance and the two branches of the domain resonance of periodic stripe domains are measured as function of the bias induction applied in the film plane parallel to the stripes. Resonance frequencies up to 7.5 GHz are observed. An improved version of the hybridization model is developed to describe these resonances. It turns out that hybridization of the domain resonance branches is determined by the cubic anisotropy for [111] oriented films, while for [110] oriented films coupling of the domain resonances is mainly caused by the orthorhombic anisotropy. The theoretical model is in excellent agreement with experiments, no fitting parameters are used. It is also used to derive the phase relation between the precessing magnetizations of neighbouring domains.  相似文献   

19.
Dielectric properties of thin films (TF) of molecular crystals, including the effect of size and the boundary surfaces were analysed using Green's function method. Polarisability of molecules in various film layers and dielectric susceptibility of TF were calculated. A comparison with crystal bulk has shown that dielectric properties of TF are strongly influenced both by the sample dimensions and by the boundary conditions.The frequency dependence of the dielectric susceptibility has also been derived. One obtains the monotonous variation for the frequencies above and below exciton band. However, for the frequencies within the exciton band there appears to be complicated, non-monotonous dependence. The relationship between the dielectric susceptibility and the film width for the same frequency shows a complex, oscillatory behaviour. Furthermore, the amplitude of these oscillations increases with increasing film width, demanding the introduction of a damping factor. Finally, the thickness dependence of dielectric susceptibility was analysed in the Cole-Cole plot.  相似文献   

20.
The oxidation characteristics of silicon implanted with a low dose of nitrogen (1–3×1015cm–2) have been studied for dry oxidation conditions at 1020°C. The wafers were subjected to a pre-oxidation annealing. Complete inhibition of the oxide growth occurs in the initial stage of oxidation, while the oxidation rate for prolonged oxidation is identical to that for pure silicon. The oxidation resistance increases with the implantation dose. The resistance is attributed to the formation of a nitrogen-rich surface film during annealing. This layer, which consists of only a few monolayers, is presumably composed of oxynitride. The electrical characteristics of MOS capacitors formed on implanted wafers show that the interface state density is not significantly increased by the low-dose N implantation.  相似文献   

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