Strain-confined wires and dots at a GaAs/AlxGa1-xAs interface

We have observed lateral exciton confinement at the GaAs/Al_xGa_1-xAs interface. The confinement is achieved in both the growth and lateral directions by the strain potential under an amorphous carbon stressor. The potential welt varies from 15 meV to 40 meV for different stressor sizes. We have also made transient measurements on this structure, which show efficient exciton transfer from the bulk GaAs to the confined region.     

GaAs/AlxGa1-xAs球形量子点中的电子结构

详细讨论了GaAs/AlxGa1-xAs球形量子点内的单电子束缚能级随量子点半径、Al组分以及外电场的变化规律,并计算了考虑量子点内外电子有效质量不同后对电子能级的修正. 另外,用解析和平面波展开两种方法对球形量子点内的电子能级进行了计算,并对计算结果做了比较,发现它们符合的很好. 结论和方法为量子点的研究和应用提供了有益的信息和指导.     

Energy levels of single nonabrupt GaAs/AlxGa1-xAs quantum wells

Energy levels of electrons in nonabrupt GaAs/Al_xGa_1-xAs single quantum wells are calculated with and beyond the constant interfacial effective mass approximation (CIEMA), and compared with those of abrupt GaAs/Al_xGa_1-xAs quantum wells. For a given interface width, the energy levels calculated with the CIEMA are higher than those calculated beyond it, but both are higher than those of the abrupt semiconductor quantum well. The shifts of the energy levels increase with the interfacial width of the nonabrupt quantum well, as well as with the degree of interfacial asymmetry.