单畴的单原子In纳米线阵列的制备与研究

利用Si（001）向［110］方向偏4°角的斜切表面作为衬底，成功地制备了分布均匀的单畴的单原子In链阵列.扫描隧道显微镜分析表明，沉积的In原子优先吸附在台面上沿着台阶内边缘的位置，并在两个Si的二聚体链之间形成稳定的In二聚体.In二聚体组成直的单原子链，其生长机理与Car提出的“表面聚合反应”相一致.另外，衬底具有非常窄的台面和双原子层台阶边的特殊结构是形成单畴的单原子链的关键. 关键词： 铟单原子链 硅邻近面 扫描隧道显微镜     

Structural phase transition on Si(001) and Ge(001) surfaces

Among a variety of solid surfaces, Si(001) and Ge(001) have been most extensively studied. Although they seem to be rather simple systems, there have been many conflicting arguments about the atomic structure on these surfaces. We first present experimental evidence indicating that the buckled dimer is the basic building block and that the structural phase transition between the low-temperature c(4x2) structure and the high-temperature (2x1) structure is of the order-disorder type. We then review recent theoretical work on this phase transition. The real system is mapped onto a model Ising-spin system and the interaction parameters are derived from total-energy calculations for different arrangements of buckled dimers. The calculated critical temperature agrees reasonably well with the experimental one. It is pointed out that the nature of the phase transition is crucially affected by a small amount of defects on the real surfaces.