Two-dimensional electronic transport in In0.53Ga0.47As quantum Wells

Transport properties of the electrons itinerant two dimensionality in a square quantum well of In_0.53Ga_0.47As are studied in the framework of Fermi-Dirac statistics including the relevant scattering mechanisms. An iterative solution of the Boltzmann equation shows that the ohmic mobility is controlled by LO phonon scattering at room temperature, but below 130 K alloy scattering is predominant. The calculated mobilities with a suitable value of the alloy scattering potential agree with the experimental results over a range of lattice temperature. For lattice temperatures below 25 K where the carrier energy loss is governed by the deformation potential acoustic scattering, the warm electron coefficient is found to be negative. Its magnitude decreases with increasing lattice temperature and is greater for larger channel widths. Values of the small-signal AC mobility of hot electrons at a lattice temperature of 4.2 K are obtained for different sheet carrier densities and channel widths. Cut-off frequencies around 100 GHz are indicated.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

Annealing of ion-implanted Ga0.47In0.53As

We have investigated annealing of ion-implanted GaInAs using transmission electron microscopy. We have found that the best condition for the post-implantation anneals for GalnAs is a 30 second anneal at a temperature of 700–800°C. This produces a material similar in character to the untreated GaInAs. Anneals for longer than 30 seconds produce crystal defects becoming increasingly complex with time for similar temperatures.     

XPS data for sputter-cleaned In0.53Ga0.47As,GaAs, and InAs surfaces

Core level binding energies and Auger parameters were determined for In, Ga, and As in the three compounds In_0.53Ga_0.47As, GaAs, and InAs. The surfaces were cleaned by 1.5 keV Ar ion bombardment. Under this condition the radiation-induced defects are small. In the case of GaAs the Ga and As3d levels become comparable with available data for chemically cleaned surfaces. The high Ga deficiency of chemically cleaned In_0.53Ga_0.47As surfaces could not be observed. Sputter cleaned surfaces seem to be closer to the bulk composition.     

Intraband Dynamics and Terahertz Emission in Biased GaAs/In0.53Ga0.47As Semiconductor Superlattices

Using an excitonic basis, we investigate the intraband polarization, optical absorption spectra, and terahertz emission of semiconductor superlattice with the density matrix theory. The excitonic Bloch oscillation is driven by the dc and ac electric fields. The slow variation in the intraband polarization depends on the ac electric field frequency. The intraband polarization increases when the ac electric field frequency is below the Bloch frequency. When the ac electric field frequency is above the Bloch frequency, the intraband polarization downwards and its intensity decreases. The satellite structures in the optical absorption spectra are presented. Due to excitonic dynamic localization, the emission lines of terahertz shift in different ac electric field and dc electric field.     

Intraband Dynamics and Terahertz Emission in Biased GaAs/In0.53Ga0.47As Semiconductor Superlattices

Using an excitonic basis, we investigate the intraband polarization, opticalabsorption spectra, and terahertz emission of semiconductor superlattice withthe density matrix theory. The excitonic Bloch oscillation is driven by the dcand ac electric fields. The slow variation in the intraband polarizationdepends on the ac electric field frequency. The intraband polarizationincreases when the ac electric field frequency is below the Bloch frequency.When the ac electric field frequency is above the Bloch frequency, theintraband polarization downwards and its intensity decreases. The satellitestructures in the optical absorption spectra are presented. Due to excitonicdynamic localization, the emission lines of terahertz shift in different acelectric field and dc electric field.     

Metamorphic In0.53Ga0.47As p-I-n photodetector grown on GaAs substrates by low-pressure MOCVD

Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin lowtemperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typical responsivity of 0.12 A/W to 1.55-μm optical radiation, corresponding to an external quantum efficiency of 9.6%. Photodetectors with the active area of 50 × 50 (μm) exhibit the -3 dB bandwidth up to 6 GHz. These results are very encouraging for the application of this metamorphic technology to opto-electronic integrated circuit (OEIC) devices.     

Incorporation behaviour of manganese in MBE grown Ga0.47In0.53As

Acceptor doping of MBE grown Ga_0.47In_0.53As on InP:Fe substrates utilizing manganese is investigated as an alternative for overcoming problems related to beryllium doping. The incorporation behaviour of manganese is analyzed in detail with respect to its application in optoelectronic device structures. Special emphasis is put on low-level and maximum-level doping relevant for use in buffer and contact layers, respectively. The dependence of activation energy and the degree of ionization on acceptor concentration is determined. At high doping levels the free-hole concentration is markedly lower than the doping concentration. It is attributed to the diffusion of acceptor species across the heterointerface into the substrate. Manganese diffusion is demonstrated to be an important effect for the interpretation of the measurement results. Manganese doping is applied in p⁺/n/p^–-layer structures for junction field effect transistor applications. The intended abruptness of acceptor profiles is deteriorated by diffusion of manganese in the Ga_0.47In_0.53As material. The degraded device characteristics obtained are attributed to the acceptor diffusion behaviour established.     

Magnetotransport in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions: in-plane effective mass,quantum and transport mobilities of 2D electrons

Shubnikov–de Haas (SdH) and Hall effect measurements, performed in the temperature range between 3.3 and 20 K and at magnetic fields up to 2.3 T, have been used to investigate the electronic transport properties of lattice-matched In_0.53Ga_0.47As/In_0.52Al_0.48As heterojunctions. The spacer layer thickness (t_S) in modulation-doped samples was in the range between 0 and 400 Å. SdH oscillations indicate that two subbands are already occupied for all samples except for that witht_S =  400 Å. The carrier density in each subband, Fermi energy and subband separation have been determined from the periods of the SdH oscillations. The in-plane effective mass (m ^* ) and the quantum lifetime (τ_q) of 2D electrons in each subband have been obtained from the temperature and magnetic field dependences of the amplitude of SdH oscillations, respectively. The 2D carrier density (N₁) in the first subband decreases rapidly with increasing spacer thickness, while that (N₂) in the second subband, which is much smaller thanN₁ , decreases slightly with increasing spacer thickness from 0 to 200 Å. The in-plane effective mass of 2D electrons is similar to that of electrons in bulk In_0.53Ga_0.47As and show no dependence on spacer thickness. The quantum mobility of 2D electrons is essentially independent of the thickness of the spacer layer in the range between 0 and 200 Å. It is, however, markedly higher for the samples with a 400 Å thick spacer layer. The quantum mobility of 2D electrons is substantially smaller than the transport mobility which is obtained from the Hall effect measurements at low magnetic fields. The transport mobility of 2D electrons in the first subband is substantially higher than that of electrons in the second subband for all samples with double subband occupancy. The results obtained for transport-to-quantum lifetime ratios suggest that the scattering of electrons in the first subband is, on average, forward displaced in momentum space, while the electrons in the second subband undergo mainly large-angle scattering.     

Maskless photoassisted etching of N-type Ga0.47In0.53As in basic solutions

The maskless photoassisted etching of n-type Ga_0.47In_0.53As is examined for basic KOH solutions in comparison with GaAs and InP material. The etch rate increases with laser intensity and with carrier concentration up to a saturation value. The best etch rate is obtained with molar KOH in ethyl alcohol (7 ms^–1 for laser intensity 10⁴ W cm^–2). Selective etching have been realized on heterojunction in order to isolate p-n junctions without the help of masks.     

In0.53 Ga0.47As/In0.52Al0.48As量子阱中双子带占据的二维电子气的输运特性

研究了不同沟道厚度的In0.53 Ga0.47As/In0.52Al0.48As量子阱中双子带占据的二维电子气的输运特性.在考虑了两个子带电子之间的磁致子带间散射效应后,通过分析Shubnikov-de Haas振荡一阶微分的快速傅里叶变换结果,获得了每个子带电子的浓度、输运散射时间、量子散射时间以及子带之间的散射时间.结果表明,对于所研究的样品,第一子带电子受到的小角散射更强,这与第一子带电子受到了更强的电离杂质散射有关.     

p-i-nInP/In_(0.53)Ga_(0.47)As/InP探测器结构优化

利用半导体仿真工具Silvaco对p-i-n InP/In_(0.53)Ga_(0.47)As/InP近红外光探测器进行优化仿真.参考实际器件对红外探测器进行建模,并将其暗电流、光谱响应仿真结果与实验结果进行拟合,保证仿真结果的有效性.以减小探测器的暗电流为目的,优化其结构.针对探测器吸收层厚度和吸收层掺杂浓度对暗电流、光响应的影响进行研究,发现当吸收层厚度大于0.3μm后,暗电流不再上升,但光响应随着吸收层厚度的增加而增大;当吸收层掺杂浓度不断上升时,器件暗电流不断降低,当掺杂浓度上升到2×1017/cm3时,暗电流达到最低值.本文还研究了p-i-n型探测器的瞬态响应,探究了响应速度与反偏电压之间的关系,发现提高反偏电压能减小探测器响应时间.     

In0.53Ga0.47AS/In0.52Al0.48As量子阱中的正磁电阻效应

在低温强磁场条件下,对In0.53 Ga0.47 As/In0.52AI0.48As量子阱中的二维电子气进行了磁输运测试.在低磁场范围内观察到正磁电阻效应,在高磁场下这一正磁电阻趋于饱和,分析表明这一现象与二维电子气中的电子占据两个子带有关.在考虑了两个子带之间的散射效应后,通过分析低磁场下的正磁电阻,得到了每个子带电子的迁移率,结果表明第二子带电子的迁移率高于第一子带电子的迁移率.进一步分析表明,这主要是由两个子带之间的散射引起的.     

Electron mobilities in isomorphic In0.53Ga0.47As quantum wells on InP substrates

The influence of the doping level, illumination, and width of isomorphic In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As quantum wells grown on InP substrates on the electron mobility is studied. The persistent photoconductivity at low temperatures is found. Band diagrams are calculated and optimal parameters are found for obtaining the maximum electron mobility. The quantum and transport electron mobilities in dimensional quantization subbands are obtained from the Shubnikov-de Haas effect. The electron mobilities are calculated in dimensional quantization subbands upon scattering by ionized impurities taking intersubband transitions into account. Scattering by ionized impurities in samples studied is shown to be dominant at low temperatures.