外腔任意反馈半导体激光器的频率调谐特性

根据半导体激光器外腔反射率的不同，系统地研究了外腔任意反馈半导体激光器的频率调谐特性，理论分析及数值模拟与实验结果基本一致。     

强反馈光纤光栅外腔半导体激光器

在理论上对强外腔反馈情形的半导体激光器线宽压窄效应进行了分析，对消反膜剩余反射率，外腔反射率，外腔腔长对线宽压缩的影响进行了研究，在实验上采用光纤光栅作为反馈元件，与一端镀有消反膜的１．５μｍ波段的常规多纵模交导体激光器耦合，构成强反馈光纤光栅外腔半导体激光器，得到单频窄线宽的激光输出，静态下边模抑制比大于３０ｄＢ，线宽小于１２０ｋＨｚ。     

外腔光反馈的半导体激光器基本模型的运行模式

根据Lang-kobayashi带光反馈的半导体激光器模型,从理论上推导出其稳定条件.数学模拟表明,对于动态单模半导体激光器,少量的外光反馈也会改变激光器的输出模式,随着反馈量的增加,激光器的振荡模式亦增加,并始终为(2n+1)个模式.     

基于降温技术的宽范围外腔光栅可调谐半导体激光器

使用半导体制冷块,通过优化设计两级制冷系统,并结合隔离、密封等措施,将LD的温度冷却到-20 ℃,使室温下输出波长为789 nm的激光器工作在780 nm附近,改变了约9 nm.结合外腔光栅反馈技术,可以使激光器的输出波长稳定在Rb原子的D2线上.自制了一个简单的电路,能够以适当的比例同时调谐光栅压电陶瓷的电压和激光器的驱动电流,使激光器可以连续调谐1O GHz以上而不跳模.     

反馈相位随机调制消除混沌半导体激光器的外腔长信息

提出并数值证实利用反馈相位的随机调制可消除外腔半导体激光器反馈引起的时延结构. 研究发现:当反馈相位随机调制信号的速率处在0.1—1 Gbit/s范围,随机调制信号的切换幅值个数达到5时,在半导体激光器偏置电流(1.2—2.8I_th)和反馈速率(8—26 GHz)构成的参数空间中,反馈时延结构对应的外腔长信息可被有效地消除. 关键词： 半导体激光器 外腔长 反馈相位 随机信号调制     

闪耀光栅外腔反馈压窄半导体激光器线宽技术的研究

在讨论半导体激光线宽压窄理论的基础上,利用闪耀光栅作为外部反馈元件,介绍了由中心波长为949.6nm、原始线宽为1.2THz的单管半导体激光器构成的反馈外腔,它能够很好的改善半导体激光器的性能。实验得到了中心波长稳定的、单纵模的高质量激光输出,边模抑制比大于30dB,线宽优于1.2MHz(Δλ<3.6×10-6nm)。实验证实了强反馈能够很好地改善外腔半导体激光器的动态特性。     

双波长外腔半导体激光器的研究

提出了电流调制型的双波长外腔半导体激光器方案。外腔半导体激光器具有窄线宽输出以及独特的阶越型电流调制特性,采用正弦调制的方式,以延时光纤作为辅助结构,得到了具有良好相干特性和稳定波长间隔的双波长激光输出。与多种已有的双波长激光器设计方案相比,这种多波长工作方式结构简单,调谐范围宽,在波分复用光通信系统、高精度光纤传感测量以及外差、双(多)波长合成波长干涉测量等技术中具有很好的应用前景。     

选频元件谱线宽度对可调谐外腔半导体激光器的影响

在可调频外腔半导体激光器（ＥＣＬＤ）中，选频元件的响应函数具有一定的频谱宽度，本文研究了该宽度对外腔半导体体激光器的影响，导出了为实现外腔半导体激光器的连续调谐所需的该宽度上限的表达式，求得了该响应的峰值频率与振荡频率之间的差别。     

外腔式可调谐半导体激光器的光谱法求解

利用由射线法求得的光谱表达式，分析了外腔式半导体激光器的输出谱，并以此求得了普遍情况下阈值载流子密度的解析表达式，结合光谱表达式与载流子速率方程，求得了不同电流下腔内载流子密度与阈值的差值，从而可以不必诸光子数速度方程而获得外腔式半导体激光器的自洽解。     

可调谐单模窄线宽外腔半导体激光器

可谐谐单模窄线宽外腔半导体激光器具有光谱纯度高，波长覆盖范围广（０．６－３５μｍ）、结构紧凑、效率高，寿命长，成本低，可靠性高，使用方便等突出优点，９０年代以来已在新兴的光纤通信，光学元件测试，计量检测传感、高分辨率光谱分析、生物医学等领域推广应用，本文对外腔半导体激光器的工作原理，结构性能，发展历史及应用前景作了简要的介绍。     

首批系列化国产外腔半导体激光器

就首批系列化国产外腔半导体激光器的设计,关键技术和生产等多方面进行了介绍,对一些特性参数进行了说明,给出了一些实物的图片。长期稳定性实验表明,产品的一致性和稳定性都达到了设计要求,生产流程和生产工艺相对简单,各项性能指标完全达到了国外同类产品的性能和指标。     

A Tunable External Cavity Laser Diode Possessing a Stable Wavelength

In this work we describe a simple external-cavity laser diode equipped with a feedback control system, in which a high-resolution position-sensitive detector detects the slight misalignment of the light within the cavity. Our system not only provides a stable wavelength that can be tuned within a maximum scanning range of 1.87 nm, but also allows for faster scanning, through precise control of the reflection angle within the cavity. The simultaneous controls on the rotation-angle of the external mirror and the injection current enabled us to realize continuous wavelength-tuning.     

Wavelength Tuning Characteristics of a Vertival Cavity Surface Emitting Laser Diode with an External Short Cavity

The characteristics of a wavelength tunable vertical cavity surface emitting laser diode (VCSEL) with an external short cavity are analyzed, in which the oscillation wavelength can be changed over several tens of nanometers with a nearly constant optical power by slightly altering the external cavity length. Analysis is based on rate equations for the optical power and carrier density, taking the effect of carrier-induced refractive index change into consideration, together with the study of behaviors of a complex resonator. The reflection coefficient r₂ of a laser facet facing the external mirror is shown to affect notably the characteristics of wavelength tuning, optical power and carrier density for a change of the external cavity length. It is also noticed that the wavelength change for this length becomes slower with relatively larger r₂ due to an increasing contribution of the effect of carrier-induced refractive index change, within the optical gain spectrum of the laser diode.     

基于外腔反馈二极管线阵列的smile效应测量方法

采用外建激光谐振腔,在低于原芯片阈值的电流激励下对LDA的每个发光点进行单独测量,从而分析整个半导体激光阵列(LDA)的smile效应。实验中利用镀膜反射率大于半导体前腔面的外腔镜形成外腔半导体激光器。在外腔中插入曲面平行于p-n结的柱面镜,使只在光轴上的发光点与外腔镜形成外腔激光器,降低该发光点的激光阈值,从而使其在正常的阈值以下的电流激励下输出激光,在平行于p-n结的方向移动柱面镜,可以逐个对半导体激光器中的发光点进行选择测量,从而获得LDA smile效应的测量值。测量中的低电流激励产生的热量对芯片寿命没有影响,对LDA的发光点的单个测量也避免了其他发光点对CCD的影响。     

Single-lobed Near Diffraction-limited Beam from 1W Laser Diode Array with an External Cavity

Abstract　An external cavity for the laser diode array with a conventional mirror in what we call two-time self-injection operation is presented. The external cavity consists of two lenses, a flat external mirror(EM) in the image plane of the array and a prism that is used as an output coupler. The single-lobed near diffraction-limited far field beam of a 1 W 10-stripe gain-guided LD array lies at 6.4°～9° with the external cavity operation in two-time self-injection mode, whereas at 2.5°～3.0° for its normal feedback operation. The width of the far field beam (FWHM) is 0.43° and 0.63° at driving current of 2 and 3.2 ×Ithr, respectively, much narrower than that in normal feedback operation, but at the expense of lower output power. The output of the system is very stable and insensitive to the tilt and position of the EM.     

Single-lobed Near Diffraction-limited Beam from 1W Laser Diode Array with an External Cavity

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Single-Mode Operation of Broad-Area Diode Laser at 670 nm by External Cavity Configuration with a Diffraction Grating

We demonstrate the single mode operation of a broad-area diode laser at 670 nm by means of an external cavity configuration using a diffraction grating. The output power of 150 mW is obtained with a spectral width of 40 MHz.     

A Narrow Line Width Tunable Diode Laser System

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外腔锁模多量子阱二极管激光器

报道一种用作光通讯光源的外腔锁模多量子阱结构半导体激光器，其脉冲宽度２～５ｐｓ，波长调谐范围为１．５２～１．５７μｍ，锁模频率０．５～１．０ＧＨｚ平均输出光功率为１ｍＷ。