Evaluation of carbon stripper foils produced by a nitrogen ion beam sputtering method

Carbon stripper foils having thicknesses in the range of 5–40 μg/cm² have been prepared by a nitrogen ion beam sputtering method and their lifetimes have been tested in the Van de Graaff accelerator facility with 3.2 MeV, Ne⁺ ions. The foils of 21 μg/cm² thickness had the longest mean lifetime of 1350.0 mC/cm² (irradiation dose of 8.4×10¹⁸ atoms/cm²) which was 50 times longer than that of commercial foils. However, foils with other thicknesses had extremely short lifetimes similar to commercial foils. The nitrogen content of the foils of both long and short lifetimes has been determined using elastic scattering of 3 MeV α-particles.     

Reduced graphene oxide foils for ion stripping applications

ABSTRACT

Reduced graphene oxide (rGO) films can be employed as ion strippers in an accelerator. They show some advantages with respect to the graphite foils, due to their high thermal and electrical conductivity, low density, high mechanical resistance and high stability. Thin graphene oxide (GO) films with a sub-micron thickness have been synthesized and transformed into reduced GO (rGO) by ion beam irradiations. Physical characterizations of the pristine and ion irradiated GO films have been performed. Measurements of stripping efficiency have been carried out by using helium, lithium, carbon and oxygen ion beams. The rGO stripper films demonstrate a significantly high charge production, comparable to that of the graphite films but with the advantage of a longer lifetime.     

Preparation of graphene on SiC by laser-accelerated pulsed ion beams

Laser-accelerated ion beams (LIBs) have been increasingly applied in the field of material irradiation in recent years due to the unique properties of ultra-short beam duration, extremely high beam current, etc. Here we explore an application of using laser-accelerated ion beams to prepare graphene. The pulsed LIBs produced a great instantaneous beam current and thermal effect on the SiC samples with a shooting frequency of 1 Hz. In the experiment, we controlled the deposition dose by adjusting the number of shootings and the irradiating current by adjusting the distance between the sample and the ion source. During annealing at 1100 ℃, we found that the 190 shots ion beams allowed more carbon atoms to self-assemble into graphene than the 10 shots case. By comparing with the controlled experiment based on ion beams from a traditional ion accelerator, we found that the laser-accelerated ion beams could cause greater damage in a very short time. Significant thermal effect was induced when the irradiation distance was reduced to less than 1 cm, which could make partial SiC self-annealing to prepare graphene dots directly. The special effects of LIBs indicate their vital role to change the structure of the irradiation sample.     

微波ECR全方位离子注入制备类金刚石碳膜的结构及摩擦学性能研究

利用微波ECR全方位离子注入技术，在单晶硅（100）衬底上制备类金刚石薄膜.分析结果表明，所制备的类金刚石碳膜具有典型的类金刚石结构特征，薄膜均匀、致密，表面粗糙度小，摩擦系数小.其中，薄膜的结构和性能与氢流量比关系密切，随氢流量比的增加，薄膜的沉积速率减小，表面粗糙度降低，且生成sp³键更加趋向于金刚石结构，表面能 更低，从而使摩擦系数大幅降低. 关键词： 全方位离子注入 类金刚石碳膜 拉曼光谱 摩擦磨损     

铪离子等离子体源离子注入铜基体的数值模拟

通过SRIM软件对铪离子等离子体源离子注入铜进行了模拟。模拟了铪离子注入铜的核阻止本领、电子阻止本领、入射深度随能量的变化,以及在不同注入条件下铪离子的摩尔浓度分布,并对模拟结果进行了分析。结果显示:能量低于6 MeV时核阻止本领占主导地位,高于6 MeV时电子阻止本领成为主要的能量损失,并且离子注入过程中会出现能量沉积的Bragg峰和质量沉积区域较集中的现象,入射深度随能量的增加而增加。     

铪离子等离子体源离子注入铜基体的数值模拟

通过SRIM软件对铪离子等离子体源离子注入铜进行了模拟。模拟了铪离子注入铜的核阻止本领、电子阻止本领、入射深度随能量的变化,以及在不同注入条件下铪离子的摩尔浓度分布,并对模拟结果进行了分析。结果显示：能量低于6 MeV时核阻止本领占主导地位,高于6 MeV时电子阻止本领成为主要的能量损失,并且离子注入过程中会出现能量沉积的Bragg峰和质量沉积区域较集中的现象,入射深度随能量的增加而增加。     

Computer simulation of the bombardment of a copper film on graphene with argon clusters

The process of graphene cleaning of a copper film by bombarding it with Ar_(13) clusters is investigated by the molecular dynamics method.The kinetic energies of the clusters are 5,10,20,and 30 eV and the incident angles are θ= 90°,75°,60°,45°,and 0°.It is obtained that the cluster energy should be in the interval 20 eV-30 eV for effective graphene cleaning.There is no cleaning effect at vertical incidence(θ =0°) of Ar_(13) clusters.The bombardments at 45° and 90° incident angles are the most effective on a moderate and large amount of deposited copper,respectively.     

Effects of silicon negative ion implantation in semi-insulating gallium arsenide

ABSTRACT

In the present work, effects of silicon negative ion implantation into semi-insulating gallium arsenide (GaAs) samples with fluences varying between 1?×?10¹⁵ and 4?×?10¹⁷?ions?cm^?2 at 100?keV have been described. Atomic force microscopic images obtained from samples implanted with fluence up to 1?×?10¹⁷?ion?cm^?2 showed the formation of GaAs clusters on the surface of the sample. The shape, size and density of these clusters were found to depend on ion fluence. Whereas sample implanted at higher fluence of 4?×?10¹⁷?ions?cm^?2 showed bump of arbitrary shapes due to cumulative effect of multiple silicon ion impact with GaAs on the same place. GXRD study revealed formation of silicon crystallites in the gallium arsenide sample after implantation. The silicon crystallite size estimated from the full width at half maxima of silicon (111) XRD peak using Debye-Scherrer formula was found to vary between 1.72 and 1.87?nm with respect to ion fluence. Hall measurement revealed the formation of n-type layer in gallium arsenide samples. The current–voltage measurement of the sample implanted with different fluences exhibited the diode like behavior.     

Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study

The structures of Pt clusters on nitrogen-,boron-,silicon-doped graphenes are theoretically studied using densityfunctional theory.These dopants(nitrogen,boron and silicon) each do not induce a local curvature in the graphene and the doped graphenes all retain their planar form.The formation energy of the silicon-graphene system is lower than those of the nitrogen-,boron-doped graphenes,indicating that the silicon atom is easier to incorporate into the graphene.All the substitutional impurities enhance the interaction between the Pt atom and the graphene.The adsorption energy of a Pt adsorbed on the silicon-doped graphene is much higher than those on the nitrogen-and boron-doped graphenes.The doped silicon atom can provide more charges to enhance the Pt-graphene interaction and the formation of Pt clusters each with a large size.The stable structures of Pt clusters on the doped-graphenes are dimeric,triangle and tetrahedron with the increase of the Pt coverage.Of all the studied structures,the tetrahedron is the most stable cluster which has the least influence on the planar surface of doped-graphene.     

The study of ion mixed amorphous carbon films on single crystal silicon by C ion implantation

Amorphous-carbon (a-C) films were deposited on a single-crystal silicon substrate by vacuum vapor deposition system and these amorphous carbon films were implanted with 110 keV C⁺ at fluences of 1 × 10¹⁷ ions/cm². The effect of ion mixing on the surface morphology, friction behavior and adhesion strengths of amorphous carbon films was examined making use of atomic force microscopy (AFM), ball-on-disk reciprocating friction tester, nano-indentation system and scanning electron microscope (SEM). The changes in chemical composition and structure were investigated by using X-ray photoelectron spectroscopy (XPS). The results show that the anti-wear life and adhesion of amorphous carbon films on the Si substrates were significantly increased by C ion implantation. The SiC chemical bonding across the interface plays a key role in the increase of adhesion strength and the anti-wear life of amorphous carbon film. The friction and wear mechanisms of amorphous carbon film under dry friction condition were also discussed.     

N+离子注入聚四氟乙烯表面改性研究

在剂量为1×1014—1×1017ions／cm2的范围内，在不同的温度条件下，用 能量为160keV氮离子对PTFE表面进行注入处理，处理后的样品用可见(514．5nm)和傅里叶红 外(1064nm)拉曼(Raman)光谱以及扫描电镜和x射线能谱仪进行检测.实验结果表明低剂量注 入可以增强PTFE晶体结构的取向和有序性；中等剂量时溅射损失效应明显，表面粗糙度加大 ：高剂量注入时微观结构强烈地变化并生成CC双键，导致表面碳化.另外温度对表面改性效 果有很大的影响.刻蚀率和表面的微观结构的变化随着温度的升高而增强.离子注入前，用喷 射技术使样品覆盖一层150nm的金膜，薄膜的黏结性和硬度用划痕和透明胶带测试配合扫描 电镜进行分析.分析结果表明，黏结性在注入剂量为1014ions／cm2时明显增强，这 个结果与表面亲水性测量结果是一致的.但表面硬度只在温度为180℃时才得到了增强. 关键词： 离子注入 聚四氟乙烯 表面改性     

Hydrogenated carbon clusters produced by highly charged ion impact on solid

The emission of small (hydrogenated) carbon cluster ions C_nHm ⁺ (n =2-22) upon highly charged Xe^q+ (q =20-44) impact on C₈₄ surfaces is studied by means of time-of-flight secondary ion mass spectrometry. The respective stage of hydrogenation/protonation of a certain carbon cluster ion Cn ⁺ is a strong indication for its geometrical structure. From the cluster ion yield as a function of cluster size it can be concluded, that the hydrogenation takes place after the initial carbon cluster formation. The carbon clusters seem to be emitted as an entity in agreement with “equilibrium” and “shock wave” models. Received 4 February 2000     

砷化镓离子团簇的稳定性研究

采用全势能线性糕模轨道分子动力学方法，详细研究了砷化镓离子团簇Ga_nAs_n(n=4，5，6)的几何结构和稳定性.分别找到了这些离子团簇的最低能量结构，通过计算发现这些结构明显不同于中性团簇的基态结构.还发现离子团簇的其他稳定结构与对应的中性结构相比也有较大的结构畸变.在这些砷化镓离子团簇中，相对于砷原子而言，镓原子更容易处在帽原子的位置上. 关键词： 离子团簇 基态结构 稳定性     

离子注入和固相外延制备Si1-x-yGexCy半导体薄膜

用等离子体增强化学气相淀积(PECVD)生长了200nm的SiGe薄膜,然后将C离子注入SiGe层,经两步热退火处理制备了Si1-x-yGexCy三元合金半导体薄膜.应用卢瑟福背散射(RBS),傅里叶变换红外光谱(FTIR)和高分辨率x射线衍射(HRXRD)研究了薄膜的结构和外延特性.发现C原子基本处于替代位置,C原子的掺入缓解了SiGe层的压应变 关键词： Si1-x-yGexCy薄膜 离子注入 固相外延     

Effect of ion implantation on the refractive index of glass

Studies on the changes of the index of refraction in glass due to ion implantation provide an insight into the structure of amorphous substances, besides being important for the development of techniques for the production of optical integrated circuits. Using a heavy ion accelerator, optically flat samples of Pyrex and Corning borosilicate glass were implanted with ions of gallium and argon at various incident energies and doses. The refractive index was then measured and found to be between 1.5 and 1.8 at a wavelength of 5893 A.U. The change in the refractive index was found to vary linearly with the incident dose irrespective of the ion species. This suggests that bombardment damage is mainly responsible for the effect. The dependence of the refractive index change on the incident dose however depends strongly on the chemical composition of the substrate glass.     

绝缘体中金属离子注入合成纳米颗粒的理论研究

理论上提出了利用离散电子态来计算绝缘体中金属纳米颗粒Fermi能级的方法,给出了金属纳米颗粒的能级结构,并得到了依据金属纳米颗粒等离子体共振峰计算金属纳米颗粒尺寸的新公式.该理论可解释相关现象,通过实验初步验证了该理论的正确性. 关键词： 离子注入 金属纳米颗粒 绝缘体 Fermi能级     

Structural, mechanical and hydrophobic properties of fluorine-doped diamond-like carbon films synthesized by plasma immersion ion implantation and deposition (PIII–D)

Fluorine-doped diamond-like carbon (a-C:F) films with different fluorine content were fabricated on Si wafer by plasma immersion ion implantation and deposition (PIII–D). Film composition and structure were characterized by X-ray photoelectron spectroscopy (XPS) and Raman scattering spectroscopy. Surface morphology and roughness were analyzed by atomic force microscopy (AFM). Hardness and scratch resistance were measured by nano-indentation and nano-scratch, respectively. Water contact angles were measured by sessile drop method. With the increase of the CF₄ flux, fluorine content was gradually increased to the film. Raman spectra indicates that these films have a diamond-like structure. The addition of fluorine to diamond-like carbon films had a critical influence on the film properties. The film surface becomes more smoother due to the etching behavior of F⁺. Hardness was significantly reduced, while the scratch resistance results show that these films have a fairly good adhesion to the substrate. Evident improvements of the hydrophobicity have been made to these films, with contact angles of double-stilled water approaching that of polytetrafluoroethylene (PTFE). Our study suggests that broad application regions of the fluorine-doped amorphous carbon films with diamond-like structure, synthesized by PIII–D, can be extended by combining the non-wetting properties and mechanical properties which are far superior to those of PTFE.     

Raman analysis of bilayer graphene film prepared on commercial Cu(0.5 at% Ni) foil

This study reports the Raman analysis of bilayer graphene films prepared on commercial dilute Cu(0.5 at% Ni) foils using atmospheric pressure chemical vapor deposition. A bilayer graphene film obtained on Cu foil is known to have small areas of bilayer (islands) with a significant fraction of non‐Bernal stacking, while that obtained on Cu/Ni is known to grow over a large area with Bernal stacking. In the Raman optical microscope images, a wafer‐scale monolayer and large‐area bilayer graphene films were distinguished and confirmed with Raman spectra intensities ratios of 2D to G peaks. The large‐area part of bilayer graphene film obtained was assisted by Ni surface segregation because Ni has higher methane decomposition rate and carbon solubility compared with Cu. The Raman data suggest a Bernal stacking order in the prepared bilayer graphene film. A four‐point probe sheet resistance of graphene films confirmed a bilayer graphene film sheet resistance distinguished from that of monolayer graphene. A relatively higher Ni surface concentration in Cu(0.5 at% Ni) foil was confirmed with time‐of‐flight secondary ion mass spectrometry. The inhomogeneous distribution of Ni in a foil and the diverse crystallographic surface of a foil (confirmed with proton‐induced X‐ray emission and electron backscatter diffraction, respectively) could be a reason for incomplete wafer‐scale bilayer graphene film. The Ni surface segregation in dilute Cu(0.5 at% Ni) foil has a potential to impact on atmospheric pressure chemical vapor deposition growth of large‐area bilayer graphene film. Copyright © 2015 John Wiley & Sons, Ltd.     

硅纳米团簇与石墨烯复合结构储锂性能的第一性原理研究

本文采用第一性原理计算方法, 研究了不同晶向硅纳米团簇与石墨烯复合结构稳定性及其储锂性能. 计算了不同高度、大小硅团簇与石墨烯复合结构的结合能, 复合结构中嵌锂吸附能和PDOS. 分析表明, 硅团簇和石墨烯之间形成较强的Si—C键, 其中[111]晶向硅团簇与石墨烯作用的形成能最高, 结构最为稳定. 进一步计算其嵌锂吸附能, 发现硅团簇中靠近石墨烯界面处的储锂位置更加有利于锂的吸附, 由于锂和碳、硅之间有较强电荷转移, 其吸附能明显大于其他储锂位置. 同时在锂嵌入过程中, 由于石墨烯的引入, 明显减小了界面处硅的形变, 有望提高其作为锂电池负极材料的可逆容量.