Phonon-Limited Electron Mobility in Single-Layer MoS2

The dynamics of electron transport in single-layer MoS2 is simulated by employing the single particle Monte Carlo method. Acoustic phonon scattering, optical phonon scattering and Frohlich scattering are taken into account. It is found that the electron mobility decreases from 806cm2 /V.s for a transverse electrical field of 103 Vim to 426/112 cm2 /V.s for a transverse electrical field of 105/107 Vim. Further detailed analysis on carrier dynamics reveals that the low field mobility is dominated by the acoustic phonon scattering while the role of optical phonon scattering is to relax the electron energy below the optical phonon energy by efficient energy relaxation through optical phonon emission. Only when the transverse electrical field is larger than 106 V/m, the mobility can be determined by the optical phonon scattering, leading to a strong mobility degradation.     

Phonon-dependent transport through a serially coupled double quantum dot system

Using Keldysh nonequilibrium Green function formalism and mapping a many-body electron–phonon interaction onto a one body problem, the electron transport through a serially coupled double quantum dot system is analyzed. The influence of the electron–phonon interaction, temperature, detuning, and interdot tunneling on the transmission coefficient and current is studied. Our results show that the electron–phonon interaction results in the appearance of the side peaks in the transmission coefficient, whose height is strongly dependent on the phonon temperature. We have also found that the inequality of the electron–phonon interaction strength in two dots gives rise to an asymmetry in the current–voltage characteristic. In addition, the temperature difference between the phonon and electron subsystems results in the reduction of the saturated current and the destruction of the step-like behavior of the current. It is also observed that the detuning can improve the magnitude of the current by compensating the mismatch of the quantum dots energy levels induced by the electron–phonon interaction.     

Optical vibration modes and electron－phonon interaction in ternary mixed crystals of polar semiconductors

Optical vibrations of the lattice and the electron－phonon interaction in polar ternary mixed crystals are studied in the framework of the continuum model of Born and Huang and the random-element-isodisplacement model. A normal-coordinate system to describe the optical vibration in ternary mixed crystals is correctly adopted to derive a new Fr?hlich-like Hamiltonian for the electron－phonon interaction including the unit-cell volume variation influence. The numerical results for the phonon modes, the electron－phonon coupling constants and the polaronic energies for several typical materials are obtained. It is verified that the nonlinearity of the electron－phonon coupling effects with the composition is essential and the unit-cell volume effects cannot be neglected for most ternary mixed crystals.     

Effects of layer stacking and strain on electronic transport in two-dimensional tin monoxide

Tin monoxide(SnO) is an interesting two-dimensional material because it is a rare oxide semiconductor with bipolar conductivity.However, the lower room temperature mobility limits the applications of SnO in the future.Thus, we systematically investigate the effects of different layer structures and strains on the electron–phonon coupling and phonon-limited mobility of SnO.The A_(2u)phonon mode in the high-frequency region is the main contributor to the coupling with electrons for different layer structures.Moreover, the orbital hybridization of Sn atoms existing only in the bilayer structure changes the conduction band edge and conspicuously decreases the electron–phonon coupling, and thus the electronic transport performance of the bilayer is superior to that of other layers.In addition, the compressive strain of ε =-1.0% in the monolayer structure results in a conduction band minimum(CBM) consisting of two valleys at the Γ point and along the M–Γ line, and also leads to the intervalley electronic scattering assisted by the E_(g(-1))mode.However, the electron–phonon coupling regionally transferring from high frequency A_(2u)to low frequency E_(g(-1))results in little change of mobility.     

Properties of ground state and anomalous quantum fluctuations in one-dimensional polaron-soliton systems—the effects of electron-two-phonon interaction and non-adiabatic quantum correlations

Based on the Holstein model Hamiltonian of one-dimensional molecular crystals, by making use of the expansion approach of the correlated squeezed-coherent states of phonon instead of the two-phonon coherent state expansion scheme, the properties of the ground state and the anomalous quantum fluctuations are investigated in a strongly coupled electron-phonon system with special consideration of the electron-two-phonon interaction. The effective renormalization (αi) of the displacement of the squeezed phonons with the effect of the squeezed-coherent states of phonon and both the electron-displaced phonon and the polaron-squeezed phonon correlations have been combined to obtain the anomalous quantum fluctuations for the corrections of the coherent state. Due to these non-adiabatic correlations, the effective displacement parameter αi is larger than the ordinary parameter α (0) i . In comparison with the electron-one-phonon interaction (g) corrected as αig, we have found the electron-two-phonon interaction (g1) corrected as αi2 g1 is enhanced significantly. For this reason, the ground state energy (E(2) 0 ) contributed by the electron-two-phonon interaction is more negative than the single-phonon case (E(1) 0 ) and the soliton solution is more stable. At the same time, the effects of the electron-two-phonon interaction greatly increase the polaron energy and the quantum fluctuations. Furthermore, in a deeper level, we have considered the effect of the polaron-squeezed phonon correlation (f-correlation). Since this correlation parameter f > 1, this effect will strengthen the electron-one and two-phonon interactions by fαig and f2αi2 g1, respectively. The final results show that the ground state energy and the polaron energy will appear more negative further and the quantum fluctuations will gain further improvement.     

Scattering of light waves by electron electrostatic waves in laser produced plasmas

The propagation of light waves in an underdense plasma is studied using one-dimensional Vlasov-Maxwell numerical simulation.It is found that the light waves can be scattered by electron plasma waves as well as other heavily and weakly damping electron wave modes,corresponding to stimulated Raman and Brilluoin-like scatterings.The stimulated electron acoustic wave scattering is also observed as a high scattering level.High frequency plasma wave scattering is also observed.These electron electrostatic wave modes are due to a non-thermal electron distribution produced by the wave-particle interactions.The collision effects on stimulated electron acoustic wave and the laser intensity effects on the scattering spectra are also investigated.     

Theoretical description of electron phonon Fock space for gapless and gapped nanowires

We study the effect of electron–phonon(e–ph) interaction on the elastic and inelastic electronic transport of a nanowire connected to two simple rigid leads within the tight-binding and harmonic approximations. The model is constructed using Green's function and multi-channel techniques, taking into account the local and nonlocal e–ph interactions. Then, we examine the model for the gapless(simple chain) and gapped(PA-like nanowire) systems. The results show that the tunneling conductance is improved by the e–ph interaction in both local and nonlocal regimes, while for the resonance conductance, the coherent part mainly decreases and the incoherent part increases. At the corresponding energies which depend on the phonon frequency, two dips in the elastic and two peaks in the inelastic conductance spectra appear. The reason is the absorption of the phonon by the electron in transition into inelastic channels.     

Effects of electron–optical phonon interactions on the polaron energy in a wurtzite ZnO/Mg_xZn_(1-x)O quantum well

We investigated the properties of polarons in a wurtzite ZnO/MgxZn1-xO quantum well by adopting a modified Lee–Low–Pines variational method, giving the ground state energy, transition energy, and phonon contributions from various optical-phonon modes to the ground state energy as functions of the well width and Mg composition. In our calculations, we considered the effects of confined optical phonon modes, interface-optical phonon modes, and half-space phonon modes, as well as the anisotropy of the electron effective band mass, phonon frequency, and dielectric constant. Our numerical results indicate that the electron–optical phonon interactions importantly affect the polaronic energies in the ZnO/MgxZn1-xO quantum well. The electron–optical phonon interactions decrease the polaron energies. For quantum wells with narrower wells, the interface optical phonon and half-space phonon modes contribute more to the polaronic energies than the confined phonon modes. However, for wider quantum wells, the total contribution to the polaronic energy mainly comes from the confined modes. The contributions of the various phonon modes to the transition energy change differently with increasing well width. The contribution of the half-space phonons decreases slowly as the QW width increases, whereas the contributions of the confined and interface phonons reach a maximum at d ≈ 5.0 nm and then decrease slowly. However,the total contribution of phonon modes to the transition energy is negative and increases gradually with the QW width of d.As the composition x increases, the total contribution of phonons to the ground state energies increases slowly, but the total contributions of phonons to the transition energies decrease gradually. We analyze the physical reasons for these behaviors in detail.     

Detailed electronic structure of three-dimensional Fermi surface and its sensitivity to charge density wave transition in ZrTe_3 revealed by high resolution laser-based angle-resolved photoemission spectroscopy

The detailed information of the electronic structure is the key to understanding the nature of charge density wave(CDW) order and its relationship with superconducting order in the microscopic level. In this paper, we present a high resolution laser-based angle-resolved photoemission spectroscopy(ARPES) study on the three-dimensional(3 D) hole-like Fermi surface around the Brillouin zone center in a prototypical quasi-one-dimensional CDW and superconducting system ZrTe_3. Double Fermi surface sheets are clearly resolved for the 3 D hole-like Fermi surface around the zone center. The3 D Fermi surface shows a pronounced shrinking with increasing temperature. In particular, the quasiparticle scattering rate along the 3 D Fermi surface experiences an anomaly near the charge density wave transition temperature of ZrTe_3(～ 63 K). The signature of electron–phonon coupling is observed with a dispersion kink at ～ 20 me V; the strength of the electron–phonon coupling around the 3 D Fermi surface is rather weak. These results indicate that the 3 D Fermi surface is also closely connected to the charge-density-wave transition and suggest a more global impact on the entire electronic structure induced by the CDW phase transition in ZrTe_3.     

Polarization and exchange effects in elastic scattering of electron with atoms and ions

Laser-induced electron diffraction(LIED), in which elastic scattering of the returning electron with the parent ion takes place, has been used to extract atomic potential and image molecular structures with sub-?A precision and exposure time of a few femtoseconds. So far, the polarization and exchange effects have not been taken into account in the theoretical calculation of differential cross section(DCS) for the laser-induced rescattering processes. However, the validity of this theoretical treatment has never been verified. In this work, we investigate the polarization and exchange effects on electron impact elastic scattering with rare gas atoms and ions. It is found that, while the exchange effect generally plays a more important role than the polarization effect in the elastic scattering process, the exchange effect is less important on electron–ion collisions than on electron–atom collisions, especially for scattering in backward direction. In addition, our calculations show that, for electron–atom collisions at incident energies above 50 e V, both the polarization and exchange effects can be safely neglected, while for electron–ion collisions, both the polarization and exchange potentials do not make substantial contributions to the DCS at incident energies above 20 e V and scattering angles larger than 90?. Our investigation confirms the validity of the current LIED method.     

Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors

We investigate the conductivity characteristics in the surface accumulation layer of a junctionless nanowire transistor fabricated by the femtosecond laser lithography on a heavily n-doped silicon-on-insulator wafer. The conductivity of the accumulation region is totally suppressed when the gate voltage is more positive than the flatband voltage. The extracted low field electron mobility in the accumulation layer is estimated to be 1.25 cm2·V-1·s-1. A time-dependent drain current measured at 6 K predicts the existence of a complex trap state at the Si–Si O2 interface within the bandgap. The suppressed drain current and comparable low electron mobility of the accumulation layer can be well described by the large Coulomb scattering arising from the presence of a large density of interface charged traps. The effects of charge trapping and the scattering at interface states become the main reasons for mobility reduction for electrons in the accumulation region.     

Interaction between encapsulated microbubbles:A finite element modelling study

Theoretical studies on the multi-bubble interaction are crucial for the in-depth understanding of the mechanism behind the applications of ultrasound contrast agents(UCAs) in clinics. A two-dimensional(2 D) axisymmetric finite element model(FEM) is developed here to investigate the bubble–bubble interactions for UCAs in a fluidic environment. The effect of the driving frequency and the bubble size on the bubble interaction tendency(viz., bubbles' attraction and repulsion),as well as the influences of bubble shell mechanical parameters(viz., surface tension coefficient and viscosity coefficient)are discussed. Based on FEM simulations, the temporal evolution of the bubbles' radii, the bubble–bubble distance, and the distribution of the velocity field in the surrounding fluid are investigated in detail. The results suggest that for the interacting bubble–bubble couple, the overall translational tendency should be determined by the relationship between the driving frequency and their resonance frequencies. When the driving frequency falls between the resonance frequencies of two bubbles with different sizes, they will repel each other, otherwise they will attract each other. For constant acoustic driving parameters used in this paper, the changing rate of the bubble radius decreases as the viscosity coefficient increases,and increases first then decreases as the bubble shell surface tension coefficient increases, which means that the strength of bubble–bubble interaction could be adjusted by changing the bubble shell visco-elasticity coefficients. The current work should provide a powerful explanation for the accumulation observations in an experiment, and provide a fundamental theoretical support for the applications of UCAs in clinics.     

The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures

To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas （2DEG） in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al content and thickness of AlGaN barrier layer. The theoretical results are compared with one of the highest measured of 2DEG mobility reported for AlGaN/GaN heterostructures. The 2DEG mobility is modelled as a combined effect of the scat- tering mechanisms including acoustic deformation-potential, piezoelectric, ionized background donor, surface donor, dislocation, alloy disorder and interface roughness scattering. The analyses of the individual scattering processes show that the dominant scattering mechanisms are the alloy disorder scattering and the interface roughness scattering at low temperatures. The variation of 2DEG mobility with the barrier layer parameters results mainly from the change of 2DEG density and distribution. It is suggested that in AlGaN/GaN samples with a high Al content or a thick AlGaN layer, the interface roughness scattering may restrict the 2DEG mobility significantly, for the AlGaN/GaN interface roughness increases due to the stress accumulation in AlGaN layer.     

Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

In this paper,we investigate the performance of the bulk fin field effect transistor(FinFET) through a threedimensional(3D) full band Monte Carlo simulator with quantum correction.Several scattering mechanisms,such as the acoustic and optical phonon scattering,the ionized impurity scattering,the impact ionization scattering and the surface roughness scattering are considered in our simulator.The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work.Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.     

Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs

The impacts of remote Coulomb scattering(RCS)on hole mobility in ultra-thin body silicon-on-insulator(UTB SOI)p-MOSFETs at cryogenic temperatures are investigated.The physical models including phonon scattering,surface roughness scattering,and remote Coulomb scatterings are considered,and the results are verified by the experimental results at different temperatures for both bulk(from 300 K to 30 K)and UTB SOI(300 K and 25 K)p-MOSFETs.The impacts of the interfacial trap charges at both front and bottom interfaces on the hole mobility are mainly evaluated for the UTB SOI p-MOSFETs at liquid helium temperature(4.2 K).The results reveal that as the temperature decreases,the RCS due to the interfacial trap charges plays an important role in the hole mobility.     

Electrostatic interaction between a rod-like macromolecule and a circular orifice/disk in an electrolyte solution

We present the solutions of the interaction energy for a colloid system with a charged rod-like macromolecule immersed in a bulk electrolyte and moving along the axis of a circular orifice or disk (orifice/disk).The calculation requires a numerical computation of the surface charge profiles,which result from a constant surface potential on the macromolecule and the orifice/disk.In the calculation,remarkable divergences of the surface charge emerge on the edges of the macromolecule and the orifice/disk,which are well-known edge effects.The anisotropic distribution of the surface charge (effective dipole) results in an attraction between these two charged objects.This attraction is enhanced with the increase of the screening length of the system for both the orifice and the disk systems.However,the sizes of the orifice and the disk reduce to different effects on the interaction energy.     

Projectile angular-differential cross sections for single electron transfer in fast He~+-He collisions

The four-body Coulomb–Born distorted wave approximation is applied to investigate the integral as well as projectile angular-differential cross sections for single-electron capture in the collision of energetic singly positive charged helium ions with helium atoms in their ground states. The formalism satisfies the correct boundary conditions. The influence of the dynamic electron correlations on the cross sections is studied by considering the inter electronic interactions in the complete perturbation potentials in post form. Also, the sensitivity of the cross sections to the static electronic correlations is studied by using the single-zeta and the highly correlated Byron–Joachain wave functions to describe the initial bound state of the active electrons. The obtained results for the energy range of 40–5000 ke V/amu are reported and compared with other three- and four-body theoretical data and available experimental measurements. The comparison leads us to discuss the validity of the applied approach and survey the interaction effects on the cross sections by recognizing the electron–electron interaction. Particularly, for differential cross sections, the comparison of the present four-body method with the experiment shows that the agreement is not as good as that for its three-body version.     

Surface optical phonon—assisted electron Raman scattering in a semiconductor quantum disc

We have carried out a theoretical calculation of the differential cross section for the electron Raman scattering process associated with the surface optical phonon modes in a semiconductor quantum disc.electron states are considered to be confined within a quantum disc with infinite potential barriers.The optical phonon modes we have adopted are the slab phonon modes by taking into consideration the Frohlich interaction between an electron and a phonon.The selection rules for the Raman process are given.Numerical results and a discussion are also presented for various radii and thicknesses of the disc,and different incident radiation energies.     

Mobility limited by cluster scattering in ternary alloy quantum wires

The mobility limited by cluster scattering in ternary alloy semiconductor quantum wire(QWR) is theoretically investigated under Born approximation. We calculate the screened mobility due to clusters(high indium composition InGaN) scattering in the InxGa1 xN QWR structure. The characteristics of the cluster scattering mechanism are discussed in terms of the indium composition of clusters, the one-dimensional electron gas(1DEG) concentration, and the radius of QWR. We find that the density, breadth of cluster, and the correlation length have a strong effect on the electron mobility due to cluster scattering. Finally, a comparison of the cluster scattering is made with the alloy-disorder scattering. It is found that the cluster scattering acts as a significant scattering event to impact the resultant electron mobility in ternary alloy QWR.     

Secondary electron yield suppression using millimeter-scale pillar array and explanation of the abnormal yield–energy curve

The phenomenon of secondary electron emission is of considerable interest in areas such as particle accelerators and on-board radio frequency(RF) components.Total secondary electron yield(TSEY) is a parameter that is frequently used to describe the secondary electron emission capability of a material.It has been widely recognized that the TSEY vs.primary electron energy curve has a single-hump shape.However, the TSEY–energy curve with a double-hump shape was also observed experimentally—this anomaly still lacks explanation.In this work, we explain this anomaly with the help of a millimetre-scale(mm-scale) silver pillar array fabricated by three-dimensional(3 D) printing technology.The TSEY–energy curve of this pillar array as well as its flat counterpart is obtained using sample current method.The measurement results show that for the considered primary electron energy(40–1500 eV), the pillar array can obviously suppress TSEY,and its TSEY–energy curve has an obvious double-hump shape.Through Monte Carlo simulations and electron beam spot size measurements, we successfully attribute the double-hump effect to the dependence of electron beam spot size on the primary electron energy.The observations of this work may be of help in determining the TSEY of roughened surface with characteristic surface structures comparable to electron beam spot size.It also experimentally confirms the TSEY suppression effect of pillar arrays.