半导体泵浦铷蒸气激光器国内首次出光北大核心CSCD

采用体光栅对商用线阵半导体激光器进行线宽压缩,得到线宽0.1nm、中心波长780.2nm、最高连续输出功率80W的泵浦激光输出。为了降低热效应,通过外加斩波器将泵浦光转化为脉冲模式,脉宽440μs,占空比为1∶5。采用长度为5mm的铷金属饱和蒸气作为增益介质,并在常温下充入33kPa乙烷和47kPa氦气,进行了出光实验。在泵浦峰值功率35.4W,铷吸收池温度120℃时,得到峰值功率600mW的795nm铷激光输出,斜率效率为1.7%。     

半导体泵浦铷蒸气激光器国内首次出光

采用体光栅对商用线阵半导体激光器进行线宽压缩,得到线宽0.1 nm、中心波长780.2 nm、最高连续输出功率80 W的泵浦激光输出。为了降低热效应,通过外加斩波器将泵浦光转化为脉冲模式,脉宽440 μs,占空比为1∶5。采用长度为5 mm的铷金属饱和蒸气作为增益介质,并在常温下充入33 kPa乙烷和47 kPa氦气,进行了出光实验。在泵浦峰值功率35.4 W,铷吸收池温度120 ℃时,得到峰值功率600 mW的795 nm铷激光输出,斜率效率为1.7%。     

光纤放大器放大自发辐射特性与高温易损点位置

在高功率光纤放大器实验中,时常发现增益光纤抽运注入熔接点后10—50 cm处容易发生光纤烧毁现象.为了对该现象进行理论预测,基于光纤激光器速率方程模型和增益光纤的热传导模型,从种子功率、抽运功率和抽运吸收三个方面对掺镱双包层光纤放大器中的放大自发辐射(ASE)和温度特性进行研究.结果表明,在放大倍率较高、ASE较为严重等情况下,光纤放大器中的最高温度点一般不在抽运注入的熔接点处,而在距离熔接点10—50 cm处,与实验中发现光纤烧毁的位置基本符合.从光纤放大器的ASE抑制、最高温度点温度控制角度出发,对光纤放大器在种子功率、抽运功率、抽运吸收、放大倍率和抽运波长等方面的设计给出了指导性的建议.     

Compact,temperature-stable multi-gigahertz passively modelocked semiconductor disk laser

We present a compact passively mode-locked semiconductor disk laser at 1045 nm. The gain chip without any post processing consists of 16 compressively strained In Ga As symmetrical step quantum wells in the active region. 3-GHz repetition rate, 4.9-ps pulse duration, and 30-mW average output power are obtained with 1.4 W of 808-nm incident pump power. The temperature stability of the laser is demonstrated to have an ideal shift rate of 0.035 nm/K of the lasing wavelength.     

Watt-level Pr~(3+):YLF deep red laser pumped by a fiber-coupled blue LD module or a single-emitter blue LD

A power-scaled laser operation of Pr:YLi F4(YLF)crystal at 720.9 nm pumped by a 443.6 nm laser diode(LD)module was demonstrated.The 20 W module was used to pump the Pr:YLF crystal,and a maximum output power of 3.03 W with slope efficiency of 30.04%was obtained.In addition,a 5 W blue LD was also used to pump the Pr:YLF laser,and a maximum output power of 0.72 W was obtained at room temperature.The output power was limited by the wavelength mismatch between the single-emitter LD and the absorption peak of the crystal.     

AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO<Subscript>4</Subscript> laser

An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.     

In-band pumped Er:YAG ceramic laser with 11 W of output power at 1645 nm

We report on a high power polycrystalline Er:YAG ceramic laser in-band pumped by a cladding-pumped Er, Yb fiber laser wavelength locked at 1532 nm with a volume Bragg grating. Using 1.0 at % Er³⁺-doped ceramic as the gain medium and an output coupler of 10% transmission, the laser had a threshold pump power of ∼1.5 W and generated 11 W of continuous-wave output at 1645 nm for 23.3 W of incident pump power at 1532 nm, corresponding to a slope efficiency with respect to incident pump power of 51%.     

Yb∶Y_2O_3陶瓷薄片激光器获得10.5 W连续激光输出

室温下采用中心波长约970 nm准直输出的大功率激光二极管模块作为抽运源,端面抽运双程吸收的腔型结构,抽运原子数分数为8%的Yb:Y2O3多晶透明陶瓷片获得连续激光输出。抽运阈值功率为7 W,当抽运功率达到35 W时,获得优化连续激光输出功率为10.5 W,光光转换效率为30%,斜率效率为37.5%。激光输出功率随抽运功率基本呈线性增长。采用更高功率抽运源、优化谐振腔结构和减小热效应的影响,Yb∶Y2O3陶瓷激光器的输出功率和效率将会得到进一步提高。     

High-power and wavelength-tunable operation of an Er,Yb fiber laser using a volume Bragg grating

Efficient high-power operation of double-clad Er,Yb-doped fiber lasers with fixed-wavelength and wavelength-tunable resonator configurations using volume Bragg gratings for wavelength selection are reported. The fixed-wavelength laser yielded a maximum output power of 103 W at 1552.6 nm with a linewidth of ~0.4 nm (FWHM) for a launched pump power of 290 W at 976 nm. The wavelength-tunable laser could be tuned from 1528 to 1550 nm with a linewidth of 0.2 nm (FWHM) and with output power in the range 30-38 W for a launched pump power of 120 W. The prospects for further improvement in performance are considered.     

高效率Nd:YVO4/LBO临界相位匹配脉冲绿光激光器

报道了一种利用激光二极管（LD）端面泵浦Nd:YVO4晶体,声光调Q,LBO临界相位匹配腔内倍频的高效率、小体积、风冷绿光激光器。分析了不同偏振光泵浦的情况下,激光晶体对泵浦光的吸收特性。由分析得出,采用部分偏振光泵浦,可以提高激光晶体对泵浦光吸收均匀性,改善基波畸变,获得高转换效率激光输出。实验中,在泵浦光功率为33 W、声光调Q重复频率为20 kHz时,得到脉宽为23.96 ns、平均功率为15 W的1064 nm基频光输出。经倍频后,得到平均功率为11.2 W的绿光输出,倍频效率为74.6%,总体光-光转换效率为34%。在输出功率为10 W时,测得1 h内输出功率不稳定度为0.512 2%,水平方向和竖直方向的光束质量因子M2分别为1.2和1.1。     

High-power polycrystalline Er:YAG ceramic laser at 1617 nm

We report on the efficient operation of a high-power erbium-doped polycrystalline Er:YAG ceramic laser at 1617 nm resonantly pumped by a high-power 1532 nm Er,Yb fiber laser. Lasing characteristics of Er:YAG ceramics with different Er3+ concentrations are evaluated and compared. With an output coupler of 15% transmission and 0.5 at. % Er3+-doped YAG ceramic as the gain media, the laser generates 14 W of output power at 1617 nm for 28.8 W of incident pump power at 1532 nm, corresponding to a slope efficiency with respect to incident pump power of 51.7%.     

1150 nm High-Power Fiber Laser Oscillator Pumped by 976 nm Laser Diode

We present an all-fiber 1150 nm Yb-doped fiber laser oscillator pumped by a 976 nm laser diode. To suppress amplified spontaneous emission and avoid parasitic laser oscillation, we propose a long-length gain fiber and a high-reflectivity output fiber Bragg grating in the fiber laser oscillator. The 1150 nm band single-mode fiber laser with output power of 20.5 W is demonstrated at room temperature. The optical-to-optical conversion efficiency ranges up to 51.6% at the maximum output. The central wavelength of the fiber laser oscillator is 1150.35 nm, and its 3 dB spectral width is 0.72 nm. No evidence of amplified spontaneous emission, residual pump light, or parasitic laser oscillation were observed in the experiments. The high-power 1150 nm fiber laser oscillator can be used as a pump source in the development of a 3 μm Ho-doped fiber laser.     

All-solid-state continuous-wave frequency doubling Nd:LuVO4/LBO laser with 9.6 W output power at 458 nm

An efficient and compact red laser at 458 nm is generated by intracavity frequency doubling of a continuous wave (CW) laser operation of a diode pumped Nd:LuVO₄ laser at 916 nm under the condition of suppression the higher gain transition near 1064 nm. With 30 W diode pump power and a frequency doubling crystal LBO, as high as 9.6 W of CW output power at 458 nm is achieved, corresponding to an optical-to-optical conversion efficiency of 32.0% and the output power stability in 8 hours is better than 2.35%. To the best of our knowledge, this it the highest conversion efficiency of watt-level laser at 458 nm generated by intracavity frequency doubling of a diode pumped Nd:LuVO₄ laser at 916 nm.     

All-solid-state continuous-wave frequency doubling Nd:YAG/LBO laser with 8.2 W output power at 660 nm

An efficient and compact red laser at 660 nm is generated by intracavity frequency doubling of continuous wave (CW) laser operation of a diode pumped Nd:YAG laser at 1319 nm under the condition of suppression the higher gain transition near 1064 and 1319 nm under the condition of suppression the higher gain transition near 1064 and 1338 nm. With 40 W diode pump power and a frequency doubling crystal LBO, as high as 8.6 W of CW output power at 660 nm is achieved, corresponding to an optical-to-optical conversion efficiency of 21.5% and the output power stability in 8 h is better than 2.73%. To the best of our knowledge, this it the highest conversion efficiency of watt-level laser at 660 nm generated by intracavity frequency doubling of a diode end pumped Nd:YAG laser at 1319 nm.     

All-solid-state 543 nm green laser generated by frequency doubling of a diode pumped Nd:YVO<Subscript>4</Subscript> laser at 1086 nm

An efficient and compact green laser at 543 nm is generated by intracavity frequency doubling of a continuous wave (CW) laser operation of a diode pumped Nd:YVO₄ laser at 1086 nm under the condition of suppression the higher gain transition near 1064 nm. With 10 W diode pump power and a frequency doubling crystal LBO, as high as 2.13 W of CW output power at 543 nm is achieved, corresponding to an optical-to-optical conversion efficiency of 21.3% and the output power stability in 3 h is better than 2.27%.     

Crystal growth,spectral and laser properties of Nd:LSAT single crystal

Nd:(La, Sr)(Al, Ta)O₃ (Nd:LSAT) crystal was grown by the Czochralski method. The absorption and fluorescence spectra of Nd:LSAT crystal at room temperature were investigated. With a fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Nd:LSAT crystal was demonstrated. The result of diode-pumped laser operation of Nd:LSAT crystal single crystal is reported for what is to our knowledge the first time. The maximum output power at 1064 nm was obtained to be 165 mW under the incident pump power of 3 W, with the slope efficiency 10.9%.     

All-solid-state continuous-wave frequency doubling Nd:YLF/LBO laser with 2.15 W output power at 526 nm

An efficient and compact green laser at 526 nm generated by intracavity frequency doubling of a continuous wave (CW) laser operation of a diode pumped Nd:YLF laser at 1053 nm under the condition of suppression the high gain transition at 1047 nm. With 19.5 W diode pump power and a frequency doubling crystal LBO, as high as 2.15 W of CW output power at 526 nm is achieved, corresponding to an optical-to-optical conversion efficiency of 11.2% and the output power stability in 8 h is better than 2.87%. To the best of our knowledge, this it the highest watt-level laser at 526 nm generated by intracavity frequency doubling of a diode pumped Nd:YLF laser at 1053 nm.     

High-power efficient tunable Nd:GdVO4 laser at 1083 nm

An efficient tunable diode-pumped Nd:GdVO4 laser at 1083 nm has been constructed by suppressing the higher gain transition near 1063 nm. With 12.5 W diode pump power, the free-running output power centered about 1083 nm was up to 3.4 W, corresponding to an optical-to-optical conversion efficiency of 30.1%. When a simple uncoated etalon was used as a wavelength-selective element, the output power at each helium transition was higher than 2.5 W.     

Efficient, resonantly pumped, room-temperature Er3+:GdVO4 laser

We report an efficient room-temperature operation of a resonantly pumped Er3+:GdVO4 laser at 1598.5 nm. The maximum continuous wave (CW) output power of 3.5 W with slope efficiency of 56% was achieved with resonant pumping by an Er-fiber laser at 1538.6 nm. With pumping by a commercial laser diode bar stack, a quasi-CW (QCW) output of 7.7 W and maximum slope efficiency of ~53% versus absorbed pump power were obtained. This is believed to be the first resonantly (in-band) pumped, room-temperature Er3+:GdVO4 laser.     

Continuous-wave room-temperature laser oscillation of Cr(3+):MgO

Continuous-wave laser oscillation of Cr(3+):MgO at room temperature was realized under argon-ion laser pumping at 476 and 514 nm. The free-running laser wavelength was 840 nm, and with different mirror sets laser oscillation at 824, 830, 870, and 878 nm was also realized. With different crystals a maximum output power of 48 mW and a lowest threshold with respect to the absorbed pump power of 80 mW were realized. The slope efficiencies with respect to the absorbed pump power were as high as 2.3%. No thermal effects were observed for absorbed pump powers as great as 2.7 W.