Pile-up correction in characterizing single-photon avalanche diodes of high dark count rate

Although as a single-photon detector, the single-photon avalanche diode (SPAD) may be applied to multi-photon conditions. At a minimum, SPADs with a high dark count rate (DCR) demand a higher value of photon number per pulse to improve the signal-to-noise ratio. In this case, and without correction, severe pile-up distortion may induce a system error in the measurement of photon detection efficiency (PDE) and timing jitter. In this paper, we study the pile-up distortion in SPAD characterization by numerical simulation and experimentation, and introduce a pile-up correction method for the precise characterization of PDE and timing jitter in immature SPADs with an unintentionally high DCR. The results of this study are useful in the development of future SPADs.     

门控下InGaAs/InP单光子探测器用于符合测量的时域滤波特性研究

基于砷化镓/磷化铟雪崩光电二极管(InGaAs/InP APD)的半导体单光子探测器因工作在通信波段,且具有体积小、成本低、操作方便等优势,在实用化量子通信技术中发挥了重要作用.为尽可能避免暗计数和后脉冲对单光子探测的影响,InGaAs/InP单光子探测器广泛采用门控技术来快速触发和淬灭雪崩效应,有效门宽通常在纳秒量级.本文研究揭示了门控下单光子探测器可测量的最大符合时间宽度受限于门控脉冲的宽度,理论分析与实验结果良好拟合.该研究表明,门控下InGaAs/InP单光子探测器用于双光子符合测量具有显著的时域滤波特性,限制了其在基于双光子时间关联测量的量子信息技术中的应用.     

Quantum transport in quantum well infrared photodetectors in the tunneling regime

Quantum well infrared photodetectors (QWIP) are good candidates for low photon flux detection in the 12–20 μm range. For particularly low incident power applications, it can be interesting to reduce the operating temperature to reach the ultimate performance of the QWIP (low dark current, low noise, high detectivity). Nevertheless, once the QWIP operates in the tunneling regime, the dark current is no longer improved by reducing the temperature. Thus, further improvement of the performance needs a microscopic understanding of the physical phenomena involved in QWIP operation in the tunneling regime. In this paper we focus on the dark current of QWIP operated at very low temperature (4–20 K). Experimental results obtained on a 14.5 μm peaking device revealed a plateau regime in the IV curves. We first modeled the dark current using the WKB approximation, but it failed to reproduce the shape and order of magnitude of the phenomenon. As an improvement, we developed a scattering formalism. Our model includes all the most common interactions observed in GaAs: optical phonon, acoustical phonon, alloy disorder, interface roughness, interaction with ionized impurities and between carriers. We demonstrate that, as far as the tunneling regime is concerned, the dominant interaction is the one between electron and ionized impurities, which allows us to conclude on the influence of the doping profile on the dark current.     

Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode

We characterized the dependence of the timing jitter of an InGaAs/InP single-photon avalanche diode on the excess bias voltage(V_(ex)) when operated in 1-GHz sinusoidally gated mode.The single-photon avalanche diode was cooled to-30 degrees Celsius.When the V_(ex) is too low(0.2 V-0.8 V) or too high(3 V-4.2 V),the timing jitter is increased with the V_(ex),particularly at high V_(ex).While at middle V_(ex)(1 V-2.8 V),the timing jitter is reduced.Measurements of the timing jitter of the same avalanche diode with pulsed gating show that this effect is likely related to the increase of both the amplitude of the V_(ex) and the width of the gate-on time.For the 1-GHz sinusoidally gated detector,the best jitter of 93 ps is achieved with a photon detection efficiency of 21.4%and a dark count rate of ~2.08×10~(-5) per gate at the V_(ex) of 2.8 V.To evaluate the whole performance of the detector,we calculated the noise equivalent power(NEP) and the afterpulse probability(P_(ap)).It is found that both NEP and P_(ap) increase quickly when the V_(ex) is above 2.8 V.At ~2.8-V V_(ex),the NEP and P_(ap) are ~2.06×10~(16)W/Hz~(1/2) and 7.11%,respectively.Therefore,the detector should be operated with V_(ex) of 2.8 V to exploit the fast time response,low NEP and low P_(ap).     

通讯波段单光子探测器的研制

将InGaAs/InP雪崩光电二极管应用于盖革模式下,采用门脉冲模式淬灭雪崩,并使用魔T混合网络抑制尖峰噪声,实现了通信波段1550 nm的单光子探测.在APD工作温度为223 K时,测得暗计数率与探测效率的比值为0.035.     

半导体上转换单光子探测技术研究进展

近年来,量子通信技术取得了卓越的进步和发展,而作为接收端的单光子探测器在其通信系统中则起着至关重要的作用.本文聚焦于当前主流的半导体单光子探测器,就其器件原理、工作模式、优势和劣势等方面进行了相关评述.在此基础上,着重介绍了本课题组所提出的一种新型半导体近红外上转换单光子探测技术（USPD）的研究进展.从USPD的器件基本原理、器件结构、性能指标等方面阐述了其优越性和可行性,并给出了USPD最新的空间光耦合实验结果.半导体上转换单光子探测技术的关键特性在于它不是采用InP雪崩层结构实现信号的放大,而是利用成熟的硅单光子雪崩二极管（Si-SPAD）器件来实现信号的放大和采集,从而规避InP结构在暗计数率和后脉冲效应方面的问题.USPD利用半导体材料,通过外加电场将近红外光子上转换为短波近红外或者可见光子,再用商用Si-SPAD进行探测的方法,也为我们提供了一种单光子探测的新思路,打开了另一扇单光子探测的窗口.     

Numerical analysis of In0.53Ga0.47As/InP single photon avalanche diodes

A rigorous theoretical model for In 0.53 Ga 0.47 As/InP single photon avalanche diode is utilized to investigate the dependences of single photon quantum efficiency and dark count probability on structure and operation condition.In the model,low field impact ionizations in charge and absorption layers are allowed,while avalanche breakdown can occur only in the multiplication layer.The origin of dark counts is discussed and the results indicate that the dominant mechanism that gives rise to dark counts depends on both device structure and operating condition.When the multiplication layer is thicker than a critical thickness or the temperature is higher than a critical value,generation-recombination in the absorption layer is the dominative mechanism;otherwise band-to-band tunneling in the multiplication layer dominates the dark counts.The thicknesses of charge and multiplication layers greatly affect the dark count and the peak single photon quantum efficiency and increasing the multiplication layer width may reduce the dark count probability and increase the peak single photon quantum efficiency.However,when the multiplication layer width exceeds 1 μm,the peak single photon quantum efficiency increases slowly and it is finally saturated at the quantum efficiency of the single photon avalanche diodes.     

Shot-noise detection in a carbon nanotube quantum dot

An on-chip detection scheme for high frequency signals is used to detect noise generated by a quantum dot formed in a single wall carbon nanotube. The noise detection is based on photon assisted tunneling in a superconductor-insulator-superconductor junction. Measurements of shot noise over a full Coulomb diamond are reported with excited states and inelastic cotunneling clearly resolved. Super-Poissonian noise is detected in the case of inelastic cotunneling.     

Determination of breakdown voltage of In_(0.53)Ga_(0.47)As/InP single photon avalanche diodes

We examine the saturation of relative current gain of In0.53 Ga0.47As/InP single photon avalanche diodes(SPADs) operated in Geiger mode.The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method.The analysis method is temperature-independent and can be applied to most SPADs.     

基于超导纳米线单光子探测器深空激光通信模型及误码率研究

高速深空通信是深空探测的关键技术之一,具备单光子灵敏度的激光通信系统将大大提高现有的深空通信速度.然而,单光子条件下的激光通信不仅需要考虑传输环境的影响,还需要考虑实际单光子探测器性能和光子数量子态的分布.本文在不考虑大气湍流影响的情况下,以光电探测模型为基础,引入超导纳米线单光子探测器(SNSPD)系统的探测效率和暗计数,建立了反应系统差错性能的数学模型,提出了系统误码率的计算公式.先对公式中的光强和激光脉冲重复频率对误码率的影响进行仿真,再通过实验结果验证仿真模型.结果表明,光强对误码率的影响最明显,随着光强从0.01光子/脉冲到1000光子/脉冲的增加,误码率从10~(-1)到10~(-7)量级明显下降;激光脉冲重复频率对误码率的影响受到不同光强的制约,但都随着脉冲重复频率的增加呈下降趋势.与此同时,当增加光强或者提高速度时,误码率高于仿真结果,约在10~(-4)量级,其原因可能是实际通信中调制光信号的消光比不足和光纤引入背景噪声提高了系统暗计数.以上模型和实验结果为进一步开展基于SNSPD的月球-地球、火星-地球等高速深空激光通信奠定了基础.     

生物芯片扫描仪CCD背景噪声研究

冷CCD(Cool CCD)是生物芯片扫描仪的核心检测器件,其背景噪声直接影响到检测精度。CCD背景噪声可分为光子噪声、热噪声、读出噪声和量化噪声。其中热噪声Hn与读出噪声Rn最为核心,采用拍摄暗场帧的方法对其进行实验研究。实验表明对于某一指定曝光时刻,背景噪声图像各像素的强度可认为符合正态分布,并可将均值与标准方差的估计值即■与■作为其相应正态分布的表征参数。■与■的95%置信区间较小,最大区间长度分别占■与■的0.16%和28.36%。在此基础上讨论了温度、曝光时间对均值与方差的影响。     

Single-Photon Detection at Telecom Wavelengths

A single-photon detector based on an InGaAs avalanche photodiode has been developed for use at telecom wavelengths. A suitable delay and sampling gate modulation circuit are used to prevent positive and negative transient pulses from influencing the detection of true photon induced avalanches. A monostable trigger circuit eliminates the influence of avalanche peak jitter, and a dead time modulation feedback control circuit decreases the afterpulsing. From performance tests we lind that at the optimum operation point, the quantum efficiency is 12% and the dark count rate 1.5 × 10^-6 ns^-1, with a detection rate of 500 kHz.     

基于电热模型的SNSPD 响应过程模拟与时间抖动分析

超导单光子探测器(SNSPD) 具有高探测效率, 低时间抖动、 低暗计数率、 高计数率等优点. 文章通过对纳米线电热过程的建模, 分析了纳米线的电热响应过程, 探讨了负载电阻、 偏置电流和动态电感对 SNSPD 响应时间的影响, 结合蒙特卡洛方法来模拟研究了纳米线空间不均匀性对于SNSPD 时间抖动的影响, 结果表明随着纳米线空间不均匀性的增加, 纳米线的时间抖动不断增加, 并求出了典型的时间抖动约为7.73 ps     

红外InGaAs/InP单光子探测器暗计数的研究

在开发探测器灵敏度极限实现单光子探测时,暗计数是影响探测效率的主要原因.本文分析了在红外波段采用InGaAs/InP雪崩光电二极管工作于雪崩击穿电压之上(盖革模式),进行单光子探测时暗计数的三个主要来源,指出隧穿效应对暗计数的贡献是很小的,并且针对热噪声和后脉冲分析了减小暗计数的有效方法.     

两个独立全光纤多通道光子纠缠源的Hong-Ou-Mandel干涉

独立光子源的干涉是实现复杂量子体系应用(比如多光子纠缠态产生和量子隐形传态等)的核心技术.利用100 GHz密集波分复用技术,实现了1.55μm全光纤多通道独立纠缠光子源的Hong-Ou-Mandel干涉,在不去除暗符合(随机符合计数)的情况下,可见度为53.2%±8.4%,去除暗符合可见度可达到82.9%±5.3%.给出了关于色散位移光纤中基于自发四波混频过程产生的单光子光谱纯度严格的理论描述,模拟了抽运脉冲宽度和滤波器带宽对单光子光谱纯度的影响,并给出了理论上的最佳条件(最佳的抽运脉冲宽度为8 ps,高斯滤波器带宽为40 GHz及以下).在测量Hong-Ou-Mandel干涉之前,先测量了液氮冷却状态下的色散位移光纤关联光子源的符合和随机符合比率,在抽运功率为23μW的情况下,最大比率可以达到131.Hong-Ou-Mandel干涉在高精度光学测量、测量装置无关的量子密钥分配等应用中扮演着极为重要的角色.     

生物光子图像的探测概率和极限

分析了生物超微弱发光的光子图像特点,从而看出对光子图像进行统计研究的必要,讨论了生物超微弱发光的统计分布,分析了生物超微弱发光在光子成像系统中的探测概率和光子图像的探测极限。     

面向窄线宽超导纳米线单光子探测器的电子束曝光技术

超导纳米线单光子探测器是新型超导电子器件,因其具有高探测效率、低暗计数及低时间抖动等优势,在量子信息、激光雷达等方面已得到广泛的应用.目前主流超导纳米线单光子探测器主要工作在1.5_m 以下的可见光和近红外波段.中红外波长的红外探测技术在基础科学、医学、日常生活以及军事等广泛领域发挥着重要作用,中红外单光子探测器可以使得中红外波段探测技术进入量子极限灵敏度.根据超导纳米线单光子探测器探测机理,超窄线宽的纳米线条可以提升超导纳米线单光子探测器在中红外波长的灵敏度.电子束曝光技术是目前实现超导纳米线单光子探测器纳米线线条加工的主流技术,电子束抗蚀剂种类繁多,面向超窄线宽超导纳米线单光子探测器器件的制备需求,对两款抗蚀剂进行性能测试表征,和窄纳米线制备尝试.根据负性电子束抗蚀剂MaN-2401在制备窄线宽时的显著优点,优化工艺,利用其成功制备出50nm 线宽超导纳米线单光子探测器并成功实现了2000nm 的单光子响应.     

高速串行数据链路中基于相位噪声时钟抖动测量

传统并行数据通信随着速度的增加,传输时延已难以准确控制,使得高速串行数据传输成为通信的主要方式,当数据速率超过Gb/s水平,时钟信号引入的抖动已成为系统抖动的主要成分,低数据速率抖动分析技术已难以满足要求,相位噪声测量技术在高速串行数据链路抖动分析中提供了解决方案,文章从原理上论述了相位噪声与抖动的关系,以实例给出了通过相位噪声测量间接测量抖动的工程计算方法。     

激光溅射法在射频离子阱中产生和囚禁低能多电荷离子

Timing jitter performance in binary optical preamplifier direct detection system is investigated through both the analytical method and computer simulation method. The presented analytical method is based on the moment generating function (MGF) and has taken into account the influence of optical filter on the optical pulse shape. It can be used to optimize the timing jitter performance for linear clock extraction scheme for any type of optical filter and narrow bandpass electrical filter. The presented computer simulation method is capable of dealing with any nonlinear clock extraction scheme and also the impact of laser phase noise on timing jitter performance.     

Photon-number-resolving detection at 1.04 μm via coincidence frequency upconversion

We demonstrate photon-number-resolving detection based on coincidence frequency upconversion. Pumped by synchronized pulses, the photon signal of the coherent state at 1.04 μm was upconverted into visible replicas with preserved photon number distribution. The upconverted photons were then registered by a silicon multipixel photon counter. The photon-number-resolving performance was improved by reducing the background counts with a synchronous pump as the coincidence gate and reducing the intrinsic parametric fluorescence influence with long-wavelength pumping. A total detection efficiency of 3.7% was achieved with a quite low noise probability per pulse of 0.0002.