Nanosecond domain wall dynamics in ferroelectric Pb(Zr, Ti)O(3) thin films

Domain wall motion during polarization switching in ferroelectric thin films is fundamentally important and poses challenges for both experiments and modeling. We have visualized the switching of a Pb(Zr, Ti)O(3) capacitor using time-resolved x-ray microdiffraction. The structural signatures of switching include a reversal in the sign of the piezoelectric coefficient and a change in the intensity of x-ray reflections. The propagation of polarization domain walls is highly reproducible from cycle to cycle of the electric field. Domain wall velocities of 40 m s(-1) are consistent with the results of other methods, but are far less than saturation values expected at high electric fields.     

Universal magnetic domain wall dynamics in the presence of weak disorder

The motion of elastic interfaces in disordered media is a broad topic relevant to many branches of physics. Field-driven magnetic domain wall motion in ultrathin ferromagnetic Pt/Co/Pt films can be well interpreted within the framework of theories developed to describe elastic interface dynamics in the presence of weak disorder. Indeed, the three theoretically predicted dynamic regimes of creep, depinning, and flow have all been directly evidenced in this model experimental system. We discuss these dynamic regimes and demonstrate how field-driven creep can be controlled not only by temperature and pinning, but also via interactions with magnetic entities located inside or outside the magnetic layer. Consequences of confinement effects in nano-devices are briefly reviewed, as some recent results on domain wall motion driven by an electric current or assisted by an electric field. Finally new theoretical developments and perspectives are discussed.     

Nanometer scale observation of high efficiency thermally assisted current-driven domain wall depinning

Nanometer scale observation of the depinning of a narrow domain wall (DW) under a spin current is reported. We studied approximately 12 nm wide 1D Bloch DWs created in thin films exhibiting perpendicular magnetic anisotropy. Magnetotransport measurements reveal thermally assisted current-driven DW motion between pinning sites separated by as little as 20 nm. The efficiency of current-driven DW motion assisted by thermal fluctuations is measured to be orders of magnitude higher than has been found for in-plane magnetized films, allowing us to control DW motion on a nanometer scale at low current densities.     

Model for domain wall avalanches in ferromagnetic thin films

The Barkhausen jumps or avalanches in magnetic domain-walls motion between successive pinned configurations, due the competition among magnetic external driving force and substrum quenched disorder, appear in bulk materials and thin films. We introduce a model based in rules for the domain wall evolution of ferromagnetic media with exchange or short-range interactions, that include disorder and driving force effects. We simulate in 2-dimensions with Monte Carlo dynamics, calculate numerically distributions of sizes and durations of the jumps and find power-law critical behavior. The avalanche-size exponent is in excellent agreement with experimental results for thin films and is close to predictions of the other models, such as like random-field and random-bond disorder, or functional renormalization group. The model allows us to review current issues in the study of avalanches motion of the magnetic domain walls in thin films with ferromagnetic interactions and opens a new approach to describe these materials with dipolar or long-range interactions.     

The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

A wealth of studies have confirmed that the low‐field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro‐mechanism. Recently, HfO₂ thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub‐coercive polarization reversal properties were investigated for 10 nm thick Si‐doped HfO₂ thin films. The applicability of the Rayleigh law to ultra‐thin ferroelectric films was first confirmed, indicating the existence of a multi‐domain structure. Since the grain size is about 20–30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Effect of 90° domain walls on the low-field permittivity of PbZr(0.2)Ti(0.8)O3 thin films

We report on the contribution of 90° ferroelastic domain walls in strain-engineered PbZr(0.2)Ti(0.8)O(3) thin films to the room-temperature permittivity. Using a combination of phenomenological Ginzburg-Landau-Devonshire polydomain thin-film models and epitaxial thin-film growth and characterization, the extrinsic or domain wall contribution to the low-field, reversible dielectric response is evaluated as a function of increasing domain wall density. Using epitaxial thin-film strain we have engineered a set of samples that possess a known quantity of 90° domain walls that act as a model system with which to probe the contribution from these ferroelastic domain walls. We observe a strong enhancement of the permittivity with increasing domain wall density that matches the predictions of the phenomenological models. Additionally, we report experimentally measured bounds to domain wall stiffness in such PbZr(0.2)Ti(0.8)O(3) thin films as a function of domain wall density and frequency.     

Nonlinear dynamics of domain walls with cross-ties

The dynamic behavior of a domain wall with cross-ties is analyzed on the basis of micromagnetic simulation with exact allowance for all main (exchange, magnetoanisotropic, and magnetostatic) interactions in thin magnetically uniaxial ferromagnetic films with planar anisotropy. It is found that the peculiarities of motion of such domain walls are closely related to the behavior of topological defects in the magnetization distribution (generation, motion, and annihilation of vortex–antivortex pairs on the film surface and Bloch points). We observe three different regimes of motion (stationary, periodic, and turbulent regimes), each of which is realized in a certain range of fields oriented along the easy magnetization axis. It is shown that the experimentally observed dynamic bends of the walls with cross-ties are determined by the type of motion of vortices and antivortices. The velocities of domain walls in different regimes are calculated, and the dynamic configurations of the magnetization and existing dynamic transitions between them are investigated.     

Micromagnetic analysis of current-driven DW dynamics along rough strips with high perpendicular anisotropy at room temperature

Domain-wall motion along thin ferromagnetic strips with high perpendicular magnetocrystalline anisotropy driven by spin-polarized currents is theoretically analyzed by means of full micromagnetic simulations and one-dimensional model, both including surface roughness and thermal effects. At finite temperature, the results show a current dependence of the domain wall velocity in good qualitative agreement with available experimental observations, depicting a low-current, low velocity creep regime, and a high-current, linear regime separated by a smeared depinning region. The analysis points out the relevance of both thermal fluctuations and surface roughness on the domain wall dynamics, and confirms that these effects are essential to get a better understanding on the origin, the role and the magnitude of the non-adiabaticity by direct comparison with experiments.     

Intrinsic distribution of magnetic anisotropy in thin films probed by patterned nanostructures

We demonstrate that the switching field distribution (SFD) in arrays of 50 nm to 5 microm Co/Pd elements, with perpendicular anisotropy, can be explained by a distribution of intrinsic anisotropy rather than any fabrication related effects. Further, simulations of coercivity and SFD versus element size allow the distribution of intrinsic anisotropy to be quantified in highly exchanged coupled thin films where the reversal mechanism is one of nucleation followed by rapid domain wall motion.     

Relaxation under pulsed magnetization reversal of monocrystalline films of (Bi,Lu)3(Fe,Ga)5O12 with (210) orientation

The photoresponse method is used for studying the relaxation process under pulsed magnetization reversal of monocrystalline films with the composition (Bi,Lu)₃(Fe,Ga)₅O₁₂ with (210) orientation depending on the amplitude and duration of the remagnetizing pulse. Magnetization reversal occurs through the formation, motion, and destruction of an end domain wall.     

Competition of two mechanisms of retardation of domain walls in the molecular ferrimagnet [Mn{(R/S)-pn}]2[Mn{(R/S-pn}2(H2O)][Cr(CN)6]2

The temperature dependence of the magnetization reversal dynamics of the chiral molecular ferrimagnet [Mn{(R/S)-pn}]₂[Mn{(R/S)-pn}₂(H₂O)][Cr(CN)₆]₂ has been studied at low frequencies of 1–1400 Hz, which are characteristic of the domain wall motion. It has been found from the Cole-Cole plots that domain walls undergo relaxation (at temperatures T > 10 K) and creep (at T < 10 K), and the main parameters determining these modes and the transition between them have been determined. It has been shown that the quantitative regularities of the transition between the modes of the domain wall motion correspond to the concepts of the competition between the contributions of two mechanisms to the domain wall retardation (the periodic Peierls relief and random structural defects).     

Magnetization reversal studies of continuous and patterned exchange biased NiFe/FeMn thin films

In this article we present a detailed investigation of the structural and magnetic properties of exchange biased NiFe (ferromagnet)/FeMn (antiferromagnet) thin films. The influence of the shape anisotropy on exchange bias and the magnetization reversal mechanism in a sample with patterned lines is compared with a continuous two-dimensional reference sample. Polarized neutron reflectivity (PNR) is employed to study the magnetization reversal by analyzing the spin-flip and non-spin-flip reflectivities. PNR measurements show that the magnetization reversal in the reference two-dimensional film and patterned lines is by domain wall motion rather than coherent rotation of magnetization.     

On the velocity of an end domain wall in (Bi,Lu)3(Fe,Ga)5O12 single-crystal films with (210) orientation

The mobility of an end domain wall in (Bi,Lu)₃(Fe,Ga)₅O₁₂ single-crystal garnet ferrite films with (210) orientation is determined by the photoresponse method. It is shown that the mobility of end domain walls in these films is considerably higher than that in (111) single-crystal garnet ferrite films free of rapidly relaxing ions.     

Microstructure, magnetic and magnetoimpedance properties in electrodeposited NiFe/Cu and CoNiFe/Cu wire with thiourea additive in plating bath

Magnetic thin films of NiFe and CoNiFe alloys were electrodeposited from three different deposition baths onto copper wires of 100-μm diameter. The magnetic and magnetoimpedance (MI) properties of the samples along with their microstructure were investigated as a function of thiourea additive concentrations (C_T) in the plating bath. For all intermediate frequencies, the MI ratio increased with thiourea concentration in plating bath up to a critical concentration of 80 mg/l and then decreased considerably. The change in MI with thiourea concentration in electrodeposition bath was attributed to the grain size reducing action of thiourea, which in turn enhances the soft magnetic properties of the films. At higher concentration of thiourea, the sulfur inclusion increased the magnetic softness and MI value enhanced considerably. The origin of MI lies in the combined effect of domain wall motion and spin rotation, which contributes to permeability. Inductance spectroscopy (IS) was used to evaluate the magnetic characteristic of the samples by modeling coated wires in terms of equivalent electrical circuit; namely parallel LR (inductance and resistance) circuit in series with series LR circuit. The domain wall motion was found to be greatly affected by thiourea addition in the bath, which was revealed through the study of variation of these circuit parameters. The domain wall motion thereby affects the magnetic softness of samples, which is reflected in the MI enhancement.     

Low-field vortex dynamics in various high-T c thin films

We present a novel ac susceptibility technique for the study of vortex creep in superconducting thin films. With this technique we study the dynamics of dilute vortices in c-axis oriented Y-123, Hg-1212, and Tl-1212 thin films, as well as a axis oriented Hg-1212 thin films. Results on the Hg-1212 and Tl-1212 thin films indicate that dislocation-mediated plastic flux creep of single vortices dominates at low temperatures and fields. As the temperature (or the field) is increased, the increasing vortex-vortex interactions promote a collective behavior, which can be characterized by elastic creep with a non-zero μ exponent. Also, in some of these samples effects of thermally assisted quantum creep are visible up to 45 K in some of these samples. In Y-123 thin films, creep is found to be collective down to the lowest temperatures and fields investigated, while the quantum creep persists only up to 10–11 K.     

高温超导体中磁通涡旋的量子隧道效应——TlBaCaCuO化合物磁弛豫的实验研究

本文报道了ＴｌＢａＣａＣｕＯ超导体（２２１２,２２２３单相,多晶及薄膜材料）中磁弛豫现象的实验结果。从实验上证实了通量运动由热激活到非热激活机制的转变。实验中得到的与温度无关的磁弛豫速率与由通量运动量子隧道效应理论计算结果相一致。同时讨论了各向异性和磁场对磁通的量子漂移速率的影响     

Microstructures and coercivities of SmCox and Sm(Co,Cu)5 films prepared by magnetron sputtering

We have investigated the influence of composition and annealing conditions on the magnetic properties and microstructural features of SmCo_x films that were prepared by sputtering and subsequent annealing. A huge in-plane coercivity of 5.6 T was obtained from an optimally annealed Sm–Co film, which was attributed to the nanometer sized polycrystalline microstructure of the highly anisotropic SmCo₅ phase. Although a high density of planar defects were observed in the films that were annealed at high temperatures, they did not act as strong pinning sites for domain wall motion. The effect of Cu on [SmCo_4.5(9 nm)/Cu(xnm)]₁₀ multilayer thin films was also studied. An appropriate Cu content increased the coercivity.     

Domain dynamics and magneto-electronics in magnetic thin films and nanowires

Recent theoretical results are highlighted that illustrate some of the interesting phenomena associated with magnetic domain boundary walls. Two problems will be discussed: dynamics associated with domain wall propagation, and effects related to spin transport through domain walls. For the first problem, an example of wall interaction and motion through a random potential will be discussed with reference to the general problem of roughening transitions. Images of domain dynamics in thin films of ion irradiated Co reveal a de-roughening transition associated with long range magnetostatic interactions between pairs of domain walls. A scaling theory of this transition is described in which a curious type of dynamic hysteresis can occur. For the second problem, results from calculations of ballistic charge and spin transport through domain boundary walls are discussed in terms of an effective circuit model.     

Magnetic anisotropies and coupling mechanisms in Fe/Mo(110) nanostripes

Using low-temperature (5 K) spin-polarized scanning tunneling microscopy, we have studied the morphology and magnetic properties of monolayer (ML) and double layer (DL) thick Fe nanowires grown by step flow on a Mo(110) single crystal. Magnetic contrast has been obtained using tungsten tips covered by Au/Co thin films. We find that the DL Fe nanowires, similarly to ML Fe nanowires, are perpendicularly magnetized. Because of the dipolar coupling, separated DL Fe nanowires are antiferromagnetically coupled. DL wires that are touching at step edges are ferromagnetically ordered due to direct exchange coupling. We measured the widths of the magnetic domain walls in the ML and DL Fe nanowires. The domain wall width increases with the thickness of Fe.     

Second-order optical nonlinearity of 10-mum-thick periodically poled LiNbO(3) films

We report on the fabrication and chic((2)) measurements of thin ~10-mum -thick films of periodically poled LiNbO(3), obtained by crystal ion slicing. The d(33) optical coefficient in the films is probed by sum-frequency generation with a short-pulse laser source at 1550 nm and compared with that of the bulk. Efficient, room-temperature TM(omega, m = 0)-to-TM(omega +omega, m = 0) mode conversion is obtained in the films. These measurements show that domain periodicity is preserved during ion implantation and that the thin films have bulklike nonlinearity and material dispersion.