Quasi-optical integrated antenna and receiver front end

A quasioptical receiver front end applicable to both microwave and millimeter-wave receiver arrays is presented. Two planar microwave integrated circuit (MIC) quasioptical receiver circuit designs that integrate a coupled slot antenna, a Schottky-diode balanced mixer, and a local oscillator on the same substrate are described. The even-mode/odd-mode characteristics of the coupled slotlines are used to achieve intrinsic RF/LO and RF/IF isolation. To demonstrate circuit feasibility, X-band scaled models of the circuit unit using a Gunn-diode oscillator on an Epsilam-10 substrate, and MESFET local oscillator on a R/T Duroid substrate were built and tested. Results of these tests are included     

2.5 Gb/s GaAs PIN/PHEMT单片集成光接收机前端

采用0.5 μm GaAs PHEMT工艺,研制了一种PIN光探测器和分布放大器单片集成850 nm光接收机前端. 探测器光敏面直径为30 μm,电容为0.25 pF,10 V反向偏压下的暗电流小于20 nA.分布放大器-3 dB带宽接近20 GHz,跨阻增益约46 dBΩ;在50 MHz～16 GHz范围内,输入、输出电压驻波比均小于2;噪声系数在3.03～6.50 dB之间.单片集成光接收机前端在1.0和2.5 Gb/s非归零(NRZ)伪随机二进制序列(PRBS)调制的光信号下得到较为清晰的输出眼图.     

A Ku-band integrated receiver front end

A Ku-band integrated receiver front end has been fabricated on 20-mil aluminum oxide substrates. The receiver consists of a balanced mixer and a Gunn oscillator within an area of 0.300/spl times/0.325 inch. The performance of both packaged and unpackaged microstripline receivers is described. Using external RF tuning, a noise figure of 9 dB at 18 GHz was obtained. A higher Q Gunn oscillator design is needed for more reliable single-frequency operation.     

A monolithic GaAs-on-Si receiver front end for optical interconnectsystems

The authors describe a monolithic technology for integrating GaAs with Si bipolar devices and demonstrate that such integration can provide improved system performance without degrading individual devices. The technology has been used to implement a 1-GHz GaAs/Si optical receiver with an equivalent input noise current density of less than 3 pA/√Hz for midband operation, and less than 4.5 pA/√Hz at 1 GHz. In this receiver an interdigitated GaAs metal-semiconductor-metal (MSM) photodetector is combined with a transimpedance preamplifier fabricated in silicon bipolar technology. The measured dark current of the GaAs/Si photodetector is 7 nA. The measured pulse response of an experimental integrated receiver is less than 550 ps FWHM. The integrated front end provides a wideband, low-noise optical receiver for use in local optical interconnections and demonstrates the successful application of integrated GaAs-on-Si technology to optoelectronics     

High-performance quasi-optical GaAs monolithic mixer at 110 GHz

A novel GaAs monolithic integrated circuit mixer has been fabricated which is impedance matched to fundamental waveguide. It consists of a slot coupler, coplanar transmission line, surface-oriented Schottky-barrier diode, and RF bypass capacitor monolithically integrated on the GaAs surface. At 110 GHz, a monolithic mixer module mounted in the end of a waveguide horn has an uncooled double-sideband (DSB) mixer noise temperature of 339 K and conversion loss of 3.8 dB.     

A monolithic GaAs receiver for optical interconnect systems

A monolithic GaAs optical receiver which includes a photodetector and preamplifier was designed and fabricated using a common 1.0-μm GaAs MESFET technology. The optical receiver operates at the data rate of 1 Gb/s. The transimpedance value can be continuously tuned from 1 to 10 kΩ. The metal-semiconductor-metal photodiode shows a 35% efficiency. Several design factors are considered to achieve high-bandwidth and low-noise operation. An array of the integrated receivers can be compactly implemented in a single chip for high-speed interconnection networks and photonic signal processing     

用于单片集成光接收机前端的GaAs基InP/InGaAs HBT

实现了一种可用于单片集成光接收机前端的GaAs基InP/InGaAs HBT。借助超薄低温InP缓冲层在GaAs衬底上生长出了高质量的InP外延层。在此基础上,只利用超薄低温InP缓冲层技术就在半绝缘GaAs衬底上成功制备出了InP/InGaAsHBT,器件的电流截止频率达到4.4GHz,开启电压0.4V,反向击穿电压大于4V,直流放大倍数约为20。该HBT器件和GaAs基长波长、可调谐InP光探测器单片集成为实现适用于WDM光纤通信系统的高性能、集成化光接收机前端提供了一种新的解决方法。     

5.2-GHz bandwidth monolithic GaAs optoelectronic receiver

A high-speed monolithic optoelectronic receiver consisting of a photodetector, a transimpedance amplifier and a 50-Ω output buffer stage has been fabricated using an enhancement/depletion 0.35-μm recessed-gate GaAs MESFET process. The interdigitated metal-semiconductor-metal photodetector has a dark current of 0.8 nA, a responsivity of 0.2 A/W, and a capacitance of 12 fF. The bandwidth of the receiver is 5.2 GHz with an effective transimpedance of 300 Ω into a 50-Ω load, which corresponds to a transimpedance bandwidth product of 1.5 THz-Ω     

GaAs monolithic integrated optical preamplifier

A GaAs monolithic integrated optical preamplifier has been developed based on the transimpedance principle. By associating the amplifier with an external p-i-n diode, a sensitivity of -38 dBm was measured at 140 Mbits/s and 10^-9error rate with a signal wavelength of 1.3 μm. A TiWSiN-integrated technology was used to realize larger than 100-kω feedback resistors and gate leakage could be minimized by improving Schottky contact deposition and employing selective implantation. The optimization details of the FET and resistor elements, as well as the design techniques for integrated transimpedance amplifiers are presented.     

A planar quasi-optical SIS receiver

A planar, quasi-optical SIS (superconductor-insulator-superconductor) receiver operating at 230 GHz is described. The receiver consists of a 2×5 array of half-wave dipole antennas with niobium-aluminum oxide-niobium SIS junctions on a quartz dielectric-filled parabola. The 1.4-GHz intermediate frequency is coupled from the mixer via coplanar strip transmission lines and 4:1 balun transformers. The receiver is operated at 4.2 K in a liquid helium immersion cryostat. Accurate measurements of the performance of single untuned array receiver elements are reported. A mixer noise temperature of 89 K DSB (double sideband), receiver noise temperature of 156 K DSB and conversion loss of 8 dB into a matched load have been obtained. This mixer noise temperature is approximately a factor of two larger than that of current state of the art waveguide mixers using untuned single junctions a the same frequency     

A 5-GHz CMOS wireless LAN receiver front end

This paper presents a 12.4-mW front end for a 5-GHz wireless LAN receiver fabricated in a 0.24-μm CMOS technology. It consists of a low-noise amplifier (LNA), mixers, and an automatically tuned third-order filter controlled by a low-power phase-locked loop. The filter attenuates the image signal by an additional 12 dB beyond what can be achieved by an image-reject architecture. The filter also reduces the noise contribution of the cascode devices in the LNA core. The LNA/filter combination has a noise figure of 4.8 dB, and the overall noise figure of the signal path is 5.2 dB. The overall IIP3 is -2 dBm     

1.3 μm monolithic integrated optoelectronic receiver using anInGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

The first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substrate has been fabricated. At differential output of the implemented multistage amplifier the transimpedance is 26.8 kΩ (into 50 Ω). The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s     

一种低功耗的高速光接收器跨阻前置电路设计

为了降低芯片面积和功耗,提出了一种10 Gb/s光接收器跨阻前置放大电路。该电路采用了两个带有可调共源共栅（RGC）输入的交叉有源反馈结构,其中的跨阻放大器未使用电感,从而减少了芯片的总体尺寸。该跨阻前置电路采用0.13μm CMOS工艺设计而成,数据速率高达10 Gb/s。测试结果表明,相比其他类似电路,提出的电路芯片面积和功耗更小,芯片面积仅为0.072mm2,当电源电压为1.3 V时,功率损耗为9.1 mW,实测平均等效输入噪声电流谱密度为20pA/（0.1-10）Hz,且-3dB带宽为6.9 GHz。     

60 GHz monolithic GaAs front-end circuit for receiver applications

A millimetre-wave planar mixer diode compatible with GaAs MESFET based integrated circuit fabrication has been developed. Selective ion implantation was used to optimise the diode and FET doping profiles. A novel feature reported here is the use of a deep implanted buried n+ layer to minimise diode series resistance, yielding diode cutoff frequencies in excess of 500 GHz. Monolithic balanced mixer diodes integrated with an MESFET IF amplifier fabricated by this technique have given 5dB conversion loss at 60 GHz.     

330GHz砷化镓单片集成分谐波混频器

在太赫兹频段,二极管尺寸与波长相比已不能忽略,二极管的封装会引入很大的寄生参量,因此需建立二极管三维模型提取寄生参数.同时人工装配难度增大,会增加电路不确定性.采用12μm砷化镓单片集成悬置微带线结构,基于电子科技大学与中国电子科技集团第十三研究所自主联合设计的肖特基二极管研制330 GHz砷化镓单片集成分谐波混频器.实测结果显示在5 mW本振功率的驱动下,在328 GHz可得到最小变频损耗10.4 dB,在320~340 GHz范围内,单边带变频损耗小于14.7 dB.     

A 31-GHz monolithic GaAs mixer/preamplifier circuit for receiver applications

The portion of a monolithic receiver containing integrated Schottky mixer diodes and MESFET'S with microstrip circuitry has been developed and tested at 31 GHz. This work is part of a program to establish the feasibility of monolithic receivers and transmitters at microwave and millimeter-wave frequencies. Receiver designs using high-cutoff frequency diodes in a mixer configuration followed by a MESFET amplifier are capable of operating from microwave through millimeter-wave frequencies. However, the fabrication of monolithic receiver designs requires the integration on the same wafer of devices with different material requirements. We have developed a compatible integration scheme which is fundamental to the fabrication of monolithic receivers at millimeter-wave frequencies. Fabrication and design considerations for the 31-GHz balanced mixer and IF preamplifier are described. Completed monolithic units typically exhibit a conversion gain of 4 dB from the signal frequency of 31 GHz to the IF frequency of 2 GHz. The associated noise figure is typically 11.5 dB.     

0.825 THz砷化镓单片集成二次谐波混频器

基于国内的GaAs单片集成电路产线,研制了一款中心频率在0.825 THz的二次谐波单片混频器。针对肖特基二极管在太赫兹频段的高频效应详细分析了反向并联肖特基二极管的寄生参数以完善单片电路的设计。单片电路集成度高和装配误差小的特性更适用于太赫兹频段器件的设计。梁氏引线形式电路设计既可以降低介质基板带来的损耗,减小安装的位置偏移。实测结果表明, 0.825 THz单片混频器最佳单边带的插损值为28 dB,0.81到0.84 THz频率范围内插损小于33 dB。     

无线电高度表微波集成前端

研制的4.3GHz无线电高度表微波集成前端已得到实际应用,它代替了整机原用的振荡-放大一倍频方案,提高了效率、减小了体积.微波集成前端采用了高线性度FET压控振荡器作发射源,采用高隔离度的单桥路不等负载三分贝混合环混频器.在-40°～70℃的环境温度范围内发射功率大于150mW,压控带宽123MHz,线性度小于3%,接收机噪声系数小予8dB.     

High-performance V-band cascode HEMT mixer and downconverter module

A high-performance V-band cascode HEMT mixer is presented together with a compact downconverter module integrating the mixer with other receiver MMICs. The cascode mixer was optimized for conversion gain and/or linearity by employing the low-pass interstage networks and by optimizing the bias voltages. The low-pass interstage network effectively filters out the unwanted harmonics and spurious signals, and therefore, enhances the gain and the linearity of the cascode mixer. On a two-tone test, the cascode mixer showed a high conversion gain of 6.3 dB with an LO power of 2.6 dBm at 60 GHz. When the gate bias to the upper common-gate HEMT was tuned for the intermodulation distortion "sweet spot" theoretically predicted by the authors , the mixer showed a high third-order intercept point of 11.2 dBm with a decent gain of 4.1 dB under a small DC power consumption of 8 mW. To benchmark the performance of the cascode mixer of this work, a waveguide-based compact V-band downconverter module was built by integrating the mixer with an MMIC LNA, a VCO, and a LO driving amplifier. The downconverter module showed a conversion gain higher than 20 dB from 57.5 to 61.7 GHz. This paper shows the potential of the cascode FET mixer for high-performance compact downconverter applications at millimeter-wave frequencies.