Wavefront depinning in semiconductor superlattices due to discrete-mapping failure

We investigate the wavefronts depinning in current biased, infinitely long semiconductor superlattice systems by the method of discrete mapping and show that the wavefront depinning corresponds to the discrete mapping failure. For parameter values near the lower critical current in both discrete drift model （DD model） and discrete drift-diffusion model （DDD model）, the mapping failure is determined by the important mapping step from the bottom of branch to branch α. For the upper critical parameters in DDD model, the key mapping step is from branch γ to the top of the corresponding branch α and we may need several active wells to describe the wavefronts.     

Effects of energy-spectrum broadening in alloyed semiconductor superlattices

The density of energy states is calculated for alloyed semiconductor superlattices for different excitation levels with cllowance for the effects of screening and fluctuations of impurity concentrations. The influence of the state density tails on spontaneous-emission spectra is investigated for cross-over transitions and in a model without a selection rule for the electron wave vector. Account for the state density tails allows one to describe the longwave wing and shape of spontaneous-emission spectra in accordance with experimental data. Reported at the Second International Scientific and Technical Conference on Quantum Electronics, Minsk, November 23–25, 1998. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 5, pp. 711–715, September–October, 1999.     

Dynamics of electromagnetic pulses with wide spectra in semiconductor superlattices

We considered the Maxwell equations for electromagnetic-field propagation in a solid with a one-dimensional semiconductor superlattice of quantum dots in the case where the spectral width of the electromagnetic pulse is sufficient to excite transitions between different minizones. A phenomenological equation was obtained in the form of the classical one-dimensional sine-Gordon equation with the perturbation caused by quantum transitions between the minizones. Quantum behavior of electrons was considered using the microscopic Hamiltonian, in the assumption that the pulse duration is small enough for the phonon effects to be neglected. The equation obtained was analyzed numerically, and cases where the adiabatic perturbation theory for the sine-Gordon equation can be used were found. Numerical solutions were obtained, and the domain where transitions between the minizones play a significant role in the electromagnetic-pulse dynamics was found. Talk presented at the oral issue of J. Russ. Laser Res. dedicated to the memory of Professor Vladimir A. Isakov, Professor Alexander S. Shumovsky, and Professor Andrei V. Vinogradov held in Moscow February 21–22, 2008.     

太赫兹源场致发射电子源

通过粒子模拟(PIC)软件模拟计算了在ps级别下二极与三极结构碳纳米管场致发射的电流密度与电子注聚焦性能。阳极电压在2 kV时,二极结构下电流密度达到1.85 A/cm2;三极结构下,栅压700 V时发射电流密度达到2.3 A/cm2,且在一定的三极结构参数与电极电压下,可以获得较好的电子注聚束效果。通过碳纳米管二极管发射实验,获得了6.6 A/cm2的发射电流密度,总发射电流达到52.1 mA,可以为太赫兹器件提供连续发射的电子注。     

太赫兹互补金属氧化物半导体场效应管探测器理论模型中扩散效应研究

针对基于经典动力学理论传统模型中忽略扩散效应的问题,通过对基于玻尔兹曼理论的场效应管传输线模型的理论分析,建立了包含扩散效应的太赫兹互补金属氧化物半导体(CMOS)场效应管探测器理论模型,研究扩散效应对场效应管电导及响应度的影响.同时,将此模型与忽略了扩散效应的传统模型进行了对比仿真模拟,给出了两种模型下的电流响应度随温度及频率变化的差别.依据仿真结果,并结合3σ原则明确了场效应管传输线模型中扩散部分省略的依据和条件.研究结果表明:扩散部分引起的响应度差异大小主要由场效应管的工作温度及工作频率决定.其中工作频率起主要作用,温度变化对差异大小影响较为微弱;而对于工作频率而言,当场效应管工作频率小于1 THz时,模型中的扩散部分可以忽略不计;而当工作频率大于1 THz时,扩散部分不可省略,此时场效应管模型需同时包含漂移、散射及扩散三个物理过程.本文的研究结果为太赫兹CMOS场效应管理论模型的精确建立及模拟提供了理论支持.     

Carrier dynamics and dispersive terahertz Bloch gain in semiconductor superlattices

We have directly determined the spectral shape of the complex conductivities of Bloch oscillating electrons by using time-domain terahertz (THz)-electrooptic sampling technique and presented an experimental evidence for a dispersive Bloch gain in superlattices. This unique dispersive gain without population inversion arises from a non-classical nature of Bloch oscillations; i.e., the phase of the Bloch oscillation is shifted by π/2 from that of the semi-classical charged harmonic oscillation when driven by the same AC field. By increasing the bias electric field, the gain bandwidth reached in our particular sample.     

Dynamics of molecular alignment steered by a few-cycle terahertz laser pulse

The field-free alignment of molecule ClCN is investigated by using a terahertz few-cycle pulse (THz FCP) based on the time-dependent density matrix theory. It is shown that a high degree of molecular alignment can be obtained by changing the matching number of the THz FCPs in the adiabatic regime and the non-adiabatic regime. The matching number can affect both the maximum value of the alignment and the time at which it is achieved. It is also found that a higher degree of alignment can be achieved by using the THz FCP at lower intensity and there exists an optimal threshold of molecular alignment with the increase of the field amplitude. Also found is the frequency sensitive region in which the degree of maximum alignment can be enhanced greatly by modulating the center frequencies of different THz FCPs. The investigation demonstrates that comparing with a THz single-cycle pulse, a better result of the field-free alignment can be created by a THz FCP at a constant rotational temperature of molecule.     

Phonons and periodons in IV–VI semiconductor superlattices

We have calculated the phonon and periodon dispersion relations in IV–VI semi-conducting bulk PbTe and SnTe and their superlattice structure. The model used here is a one-dimensional lattice which includes harmonic interactions up to second neighbours as well as on-site nonlinear electron-ion interactions at the anion site. We calculate the phonon and periodon dispersion relations in bulk and PbTe-SnTe superlattice for the transverse optic and acoustic modes using the transfer matrix method. Our analysis has predicted correct nature of the folding of acoustic and confinement of optical phonons at various frequency intervals corresponding to pass and stop bands of the superlattices.     

Optical absorption and electromagnetically induced transparency in semiconductor quantum well driven by intense terahertz field

An approach for solving the excitonic absorption in a semiconductor quantum well driven by an intense terahertz field is presented.The formalism relies on the stationary single-photon Schro¨dinger equation in the full quantum mechanical framework.The optical absorption dynamics in both weak and strong couplings are discussed and compared.The excitonic absorption spectra show the Autler-Townes doublets for the resonance terahertz field,a replica peak for the non-resonance terahertz field,and the electromagnetically induced transparency phenomenon for modulating the decay rate of the second electron state in the weak coupling.In particular,the electromagnetically induced transparency phenomenon window range is discussed.In the strong coupling region,the multi-order energy level resonance splitting due to the strong optical field is found.There are three(non-resonance terahertz field) or four(resonance terahertz field) peaks in the optical absorption spectra.This work provides a simple and convenient approach to deal with the optical absorption in the exciton system.     

硅基超晶格Si1-xSnx/Si的能带结构

由于Si基发光材料能与现有的Si微电子工艺兼容,其应用前景被广泛看好. 设计具有直接带隙的Si基材料,备受实验和理论研究者的关注. 本文根据芯态效应、电负性差效应和对称性效应设计了Si基超晶格Si_1－xSn_x/Si. 其中Si_0.875Sn_0.125/Si为直接带隙材料. 在密度泛函框架内,采用平面波赝势法计算表明,Si_0.875Sn_{0.125相似文献}   

太赫兹场和倾斜磁场对超晶格电子动力学特性调控规律研究

微带超晶格在磁场和太赫兹场调控下表现出丰富而复杂的动力学行为, 研究微带电子在外场作用下的输运性质对于太赫兹器件设计与研制具有重要意义. 本文采用准经典的运动方程描述了超晶格微带电子在沿超晶格生长方向(z方向)的THz场和相对于z轴倾斜的磁场共同作用下的非线性动力学特性. 研究表明, 在太赫兹场和倾斜磁场共同作用下, 超晶格微带电子随时间的演化表现出周期和混沌等新奇的运动状态. 采用庞加莱分支图详细研究了微带电子在磁场和太赫兹场调控下的运动规律, 给出了电子运行于周期和混沌运动状态的参数区间. 在电场和磁场作用下, 微带电子将产生布洛赫振荡和回旋振荡, 形成复杂的协同耦合振荡. 太赫兹场与这些协同振荡模式之间的相互作用是导致电子表现出周期态、混沌态以及倍周期分叉等现象的主要原因.     

Temperature and magnetic field tunability of composite metamaterials containing spherical semiconductor particles in far-infrared and terahertz regimes

The effect of temperature and dc magnetic field variations on effective electromagnetic parameters of metamaterials (MTMs) containing spherical semiconductor particles is studied theoretically. The effect of temperature is taken into account through its influence on semiconductor carrier density and mobility. The effect of dc magnetic field is included using an extension of the Mie theory, describing the interaction of a plane wave with a gyrotropic sphere. The effective parameters such as relative permittivity and permeability are calculated by proper application of the Maxwell Garnett (MG) theory and its extensions to quasi-static condition and multi-phase structures. Based on these theories, the temperature and dc magnetic field tunability of three different MTM structures is investigated. First a single phase medium is considered which contains spherical semiconductor particles of one kind, randomly dispersed in a dielectric host. Then two multi-phase structures containing (a) two kinds of spherical semiconductor particles or (b) spherical particles with core-shell topology are investigated. The two multi-phase MTM structures can exhibit negative index of refraction in far-infrared spectral region. The measure of the temperature and dc magnetic field tunability of effective parameters such as relative permittivity and refractive index of the structures is evaluated and it is shown specifically that the real part of refractive index can be tuned to get negative, zero or positive values in far-IR or THz regimes, but the imaginary part of the index and the Figure of Merit (FOM) are also quite sensitive to the temperature and magnetic field variations. The tunable MTMs can find new applications in THz devices such as switches, tunable mirrors, isolators, converters, polarizers, filters and phase shifters.     

强激光与等离子体相互作用产生的超强太赫兹辐射

超短强激光脉冲在等离子体中传播时会激发大振幅的等离子体尾波场，它是一种电子等离子体波．由于这是一种静电波，它一般不能转换成电磁辐射．我们发现在不均匀等离子体中激发的尾波场在一定条件下可以通过线性模式转换产生电磁辐射．由于用超短强激光脉冲尾波场可以达到的电场振幅达100GV／m，其振动频率在太赫兹（10^12Hz）附近，用这种方法可以产生电场强度达到GV／m的太赫兹辐射．     

Intraband Dynamics and Terahertz Emission in Biased GaAs/In0.53Ga0.47As Semiconductor Superlattices

Using an excitonic basis, we investigate the intraband polarization, optical absorption spectra, and terahertz emission of semiconductor superlattice with the density matrix theory. The excitonic Bloch oscillation is driven by the dc and ac electric fields. The slow variation in the intraband polarization depends on the ac electric field frequency. The intraband polarization increases when the ac electric field frequency is below the Bloch frequency. When the ac electric field frequency is above the Bloch frequency, the intraband polarization downwards and its intensity decreases. The satellite structures in the optical absorption spectra are presented. Due to excitonic dynamic localization, the emission lines of terahertz shift in different ac electric field and dc electric field.     

Intraband Dynamics and Terahertz Emission in Biased GaAs/In0.53Ga0.47As Semiconductor Superlattices

Using an excitonic basis, we investigate the intraband polarization, opticalabsorption spectra, and terahertz emission of semiconductor superlattice withthe density matrix theory. The excitonic Bloch oscillation is driven by the dcand ac electric fields. The slow variation in the intraband polarizationdepends on the ac electric field frequency. The intraband polarizationincreases when the ac electric field frequency is below the Bloch frequency.When the ac electric field frequency is above the Bloch frequency, theintraband polarization downwards and its intensity decreases. The satellitestructures in the optical absorption spectra are presented. Due to excitonicdynamic localization, the emission lines of terahertz shift in different acelectric field and dc electric field.     

Spin-wave dispersion in ferromagnetic semiconductor superlattices and thin films in the narrow-band limit

Bulk and surface magnetic excitations of the semi-infinite ferromagnetic semiconductor (FMS) superlattices and thin films described by Heisenberg and s-d model are analyzed using the transfer matrix method, developed in our previous work. Results are discussed in the narrow-band limit. The spin-wave frequencies for the semi-infinite narrow-band semiconductors are analyzed in both low- and high-frequency regions. Energies of localized excitations are compared to the bulk and the results of Green function formalism. Depending on the parameters of the system, the surface spin waves appear as “acoustical” and “optical”, and there are only some quantitative difference in the high-frequency region, comparing our method and the Green function method. In the framework of the same methodology, bulk and surface magnetic excitations of more complicated superlattices and thin films made of the FMS superlattices are analyzed in terms of dependence of the system parameters. It is shown that the s-d interaction governs the behavior of the systems. Dependence on bulk and surface parameters is discussed.     

Scattering and propagation of terahertz pulses in random soot aggregate systems

Scattering and propagation of terahertz pulses in random soot aggregate systems are studied by using the generalized multi-particle Mie-solution(GMM) and the pulse propagation theory. Soot aggregates are obtained by the diffusion-limited aggregation(DLA) model. For a soot aggregate in soot aggregate systems, scattering characteristics are analyzed by using the GMM. Scattering intensities versus scattering angles are given. The effects of different positions of the aggregate on the scattering intensities, scattering cross sections, extinction cross sections, and absorption cross sections are computed and compared. Based on pulse propagation in random media, the transmission of terahertz pulses in random soot aggregate systems is determined by the two-frequency mutual coherence function. Numerical simulations and analysis are given for terahertz pulses(0.7956 THz).     

窄带隙超晶格中载流子俄歇寿命和碰撞电离率的第一性原理研究

通过第一性原理的完整形式,基于全势能线性化增广平面波方法确定的精确能带结构和波函数,推算了技术上极为重要的窄带隙半导体超晶格中载流子俄歇复合时间.少数载流子的俄歇寿命由两种相关的方法来确定:1)由Fermi-金规则直接估算,2)联系俄歇复合和其相反过程碰撞电离,建立细致平衡公式,在一个统一的结构中进行间接估算.在n掺杂HgTe/CdTe和InAs/In_xGa_1－xSb超晶格中,由直接和间接的方法确定的寿命与一些实验结果相当一致.这说明该计算模式可以作为一种精确的手段用于窄带隙超晶格材料的性能优化. 关键词： 第一性原理 俄歇复合 碰撞电离 半导体超晶格     

少周期激光脉冲与气体作用产生的离化电流和THz波辐射

本文通过理论和数值模拟,研究少周期激光脉冲电离气体原子产生的离化电流 以及相应的THz波辐射.研究表明,少周期激光脉冲离化气体后能产生较大的离化电流, 因而可以产生较强的THz辐射.不同的少周期激光脉冲相位导致电离出的 电子初始速度和电离起始时刻不同,从而产生的离化电流有所不同, 辐射的THz波随激光脉冲的相位成周期性变化.该理论得到一维PIC数值模拟的验证. 对于给定的激光脉冲相位,离化电流和THz辐射振幅并没有随入射激光振幅的增加而单调增加, 而是存在一些极值点.与均匀分布气体相比,当气体分布具有一定梯度时, 辐射表现相似的规律,但频谱会发生一定的变化.     

太赫兹辐射场下的石墨烯光生载流子和光子发射

通过半经典的玻尔兹曼平衡方程理论研究了太赫兹辐射场下的石墨烯光生载流子和光子发射.研究得到了太赫兹辐射场下石墨烯的光生载流子浓度和光子发生率的解析公式.研究发现,掺杂电子浓度越小,或者温度越低,光生载流子浓度越大;掺杂电子浓度越大,或者温度越低,石墨烯的光子发射率越大.通过改变门电压或温度,可以有效地调控石墨烯光生载流子浓度和光子发射概率.理论研究结果和解析表达式对发展以石墨烯为基础的新型太赫兹光电器件具有重要的参考价值.