啁啾飞秒激光脉冲形成的光纤光栅的Bragg反射特性

在800nm飞秒脉冲激光照射下光敏玻璃As₂S₃光纤具有双光子吸收 现象，当一束超短激光脉冲与另一束啁啾超短激光脉冲在As₂S₃光纤相遇时，干涉图案将 永久地记录一个空间啁啾光栅.研究了该光栅结构与入射超短脉冲激光脉冲参数的关系，数值计算表明该光栅具有较大的Bragg反射带宽. 关键词： 啁啾光纤光栅 飞秒激光脉冲 双光子吸收效应     

Trace Analysis of Al on Silicon Surfaces by Ultra‐soft X‐Ray Emission Spectroscopy

It is shown that near normal incidence, low‐energy electron excitation of Al on silicon surfaces by ultra‐soft X‐Ray emission spectroscopy yielded limits of detectibility (LD) in the picogram region. This result on L band emission via electron excitation is fully competitive with photon excitation using K‐α lines via grazing incidence total reflection techniques (TXRF). Surprisingly, it was also found that normal incidence synchrotron photon excitation on the same sample yielded much higher values of LD than low‐energy electron excitation, undoubtedly due to the use of a poor transmission grating used in the entrance optics.     

Computation of the oscillator strength and absorption coefficients for the intersubband transitions of the spherical quantum dot

The electronic structure and optical properties of one-electron Quantum Dot (QD) with and without an on-center impurity were investigated by assuming a spherically symmetric confining potential of finite depth. The energy eigenvalues and the state functions of QD were calculated by using a combination of Quantum Genetic Algorithm (QGA) and Hartree–Fock Roothan (HFR) method. We have calculated the binding energy for the states 1s,1p,1d,1f, oscillator strengths, the linear and third-order nonlinear optical absorption coefficients as a function of the incident photon energy and incident optical intensity for the 1s–1p, 1p–1d and 1d–1f transitions. The existence of the impurity has great influence on the optical absorption spectra and the oscillator strengths. Also we found that the magnitudes of the total absorption coefficients of the spherical QD increase for transitions between higher states.     

Theoretical and experimental study of a laser-diode-pumped actively Q-switched Nd:YVO4 laser with acoustic–optic modulator

By considering the Gaussian spatial distribution of the intracavity photon density and initial population-inversion density as well as the longitudinal distribution of the photon density along the cavity axis and turnoff time of the acoustic–optic Q-switch, the coupled equations of an LD-pumped actively Q-switched Nd:YVO₄ laser with acoustic–optic modulator are given. These coupled rate equations are solved numerically on a computer, and the dependences of pulse width, single-pulse energy and peak power on incident pump power are obtained. In the experiment, a laser-diode-pumped actively Q-switched Nd:YVO₄ laser with acoustic–optic modulator is realized, and the experimental results are in fair agreement with the numerical solutions.     

Nitride-based photodetectors: from visible to X-ray monitoring

The performance of nitride-based photodetectors is investigated beyond the usual near-UV (400–300 nm) and mid-UV (300–200 nm) operation ranges. The responses of metal–semiconductor–metal (MSM) photodiodes were analyzed in the vacuum–UV and soft X-ray regions. To interpret the results, the absorption properties and the attributes of each of the photons with energies for producing multiple electron–hole pairs were considered. The soft X-ray characterization showed that in-plane MSMs worked efficiently up to photon energies of 600 eV. Above this value, the absorption decrease makes the diffusion length and layer thickness become critical parameters for the detector behavior. To perform detection in the violet and near-UV, InGaN-based photoconductors were fabricated and spectrally characterized. The devices presented abrupt wavelength cut-offs, demonstrating that the InGaN compositional fluctuations were tolerable up to In contents of 10% for fabricating selective photodetectors. Back-face illumination allowed us to obtain bandpass detectors for these spectral ranges.     

Ultra-fast optical spectroscopy of micelle-suspended single-walled carbon nanotubes

We present results of wavelength-dependent ultra-fast pump–probe experiments on micelle-suspended single-walled carbon nanotubes. The linear absorption and photoluminescence spectra of the samples show a number of chirality-dependent peaks and, consequently, the pump–probe results sensitively depend on the wavelength. In the wavelength range corresponding to the second van Hove singularities (VHSs) we observe subpicosecond decays, as has been seen in previous pump–probe studies. We ascribe these ultra-fast decays to intraband carrier relaxation. On the other hand, in the wavelength range corresponding to the first VHSs, we observe two distinct regimes in ultra-fast carrier relaxation: fast (0.3–1.2 ps) and slow (5–20 ps). The slow component, which has not been observed previously, is resonantly enhanced whenever the pump photon energy resonates with an interband absorption peak, and we attribute it to interband carrier recombination. Finally, the slow component is dependent on the pH of the solution, which suggests an important role played by H⁺ ions surrounding the nanotubes. PACS 78.47.+p; 78.67.Ch; 73.22.-f     

Optical band gap and optical constants in a-Se80Te20−xPbx thin films

The optical constants (absorption coefficient, refractive index, extention coefficient, real and imaginary part of dielectric constant) have been studied for a-Se₈₀Te_20−xPb_x (where x = 0, 2, 6, 10) thin films as a function of photon energy in the wave length range (500–1000 nm). It has been found that the optical band gap increases while the refractive index and the extinction coefficient (k) decreases on incorporation of lead in Se–Te system. The value of absorption coefficient (α) and the extinction coefficient (k) increases, while the value of refractive index (n) decreases with incident photon energy. The results are interpreted in terms of the change in concentration of localized states due to the shift in fermi level.     

Optical characterization of laser-induced crystallized silicon films

Optical absorption coefficient spectra of thin silicon films were precisely investigated using a simple reflectance system with total reflectance mirrors placed on the rear side of samples in order to cancel an interference effect in a range between 1.1 eV and 3 eV. The absorption coefficient decreased according to crystallization as the laser energy increased and it got similar to that of single crystalline silicon in the range of 1.7 eV 3 eV. However, the absorption coefficient was higher than 10² cm^–1 in the photon energy lower than 1.3 eV. This probably results from band tail states caused by defect states localized at grain boundaries in the crystallized films. 2.5%-phosphorus doped laser crystallized silicon films had a high optical absorption coefficient ( > 10⁴ cm^–1) in the low photon energy range (1.1 eV 1.7 eV) caused by free carriers produced from the dopant atoms activated in the silicon films. The experimental results gave the carrier density of 1.3 × 10²¹ cm³ and the carrier mobility of 20 cm²/Vs.     

Optical properties and interband transitions in the layered compounds SbI3

The optical constants of SbI₃ single crystals, prepared from solution, were calculated from normal incidence reflectance data via a Kramers-Kronig analysis. The dependence of the absorption coefficient on the photon energy suggests the presence of a direct allowed interband transition whereE _g ^d =2·225 eV at room temperature, as well as indirect phonon-assisted transition. The absorption coefficient follows Urbach's empirical relation in the range 2·08–2·34 eV near the intrinsic edge, and a Gaussian shape was obtained near the band maximum. This behaviour is indicative of its excitonic origin and may be contributed to localized excitons in the crystal.     

Optical characterization of amorphous Ga50Se45S5 films

The transmission spectra of thermally evaporated Ga₅₀Se₄₅S₅ films were measured over the wavelength range 300–900 nm. A simple method, suggested by Swanepoel, was used for the determination of the optical constants and thickness of the films. Increasing the thickness of the film beyond 450 nm does not affect the optical constants. The dependence of the absorption coefficient on the photon energy (hν) at the edge of the absorption band is well described by the relation hν=β(hν−E_opt)² with an optical gap equals 2.4 eV. A good fit of the experimental points with Tauc relation indicates that non-direct transition is the most probable mechanism responsible for the photon absorption inside the investigated film.     

Femtosecond response from two copolymers with intense two-photon absorption

Under excitation of femtosecond laser pulses at 800 nm, intense two-photon absorption induced fluorescence was observed from two copolymers, linear structure copolymer M2 and tri-branched copolymer M3. In a one-color pump–probe experiment at 800 nm, an ultrafast transient absorption was observed, which was mainly from the simultaneous absorption of the one photon from the pump beam and another photon from the probe beam. This analysis was further confirmed by a two-color pump–probe measurement with a pump at 800 nm and a probe at 556 nm, respectively. The other two decaying processes in transient absorption have a lifetime of about 14 and 126 ps, which reflects the intraband relaxation and the decay of the excited state via intersystem crossing or the solvation effect, respectively.     

Optical absorptivity of ion-beam irradiated silicon

Single-crystal layers of silicon on sapphire have been irradiated with Ne and Kr ions at room temperature. The concomitant changes in optical absorption have been measured as a function of photon energy. The absorptivity of the amorphized silicon is about one order of magnitude higher as compared to the crystalline state in the photon energy interval of 1.5–3 eV. This is sufficient for generating optical patterns of high contrast by irradiation of selected parts of the wafer.     

Optical properties of ZnTe films

Optical properties of p-type ZnTe films, deposited by hot-wall vacuum evaporation, were studied extensively in the range of incident photon energy 0.6–2.6 eV. Variations of refractive index, absorption and extinction coefficients with incident photon energy are reported in this communication.     

Fluorescence Studies of Melanin by Stepwise Two-Photon Femtosecond Laser Excitation

Fluorescence of synthetic melanin in the solvents H₂O, KOH, ethylene glycol monomethyl ether, and dimethyl sulfoxide has been excited by two-photon absorption at 800 nm, using 120-fs pulses with photon flux densities of 10²⁷ cm^–2.S^–1. Compared to the one-photon (400-nm)-induced fluorescence of melanin, the overall spectral shape is red-shifted and shows a strong environment sensitivity. The decay of the two-photon-induced fluorescence (TPF) of melanin is three-exponential, with a shortest main component of about 200 ps. The results of the TPF studies in line with the unique light absorption property of melanin of a monotonously decreasing absorption spectrum between the near UV-region and the near infrared region indicate that the TPF is realized via stepwise absorption of two 800-nm photons. In comparison to the simultaneous absorption of two photons, the stepwise process needs lower photon flux densities to get a sufficient population of the fluorescent level. This stepwise process offers new possibilities of selective excitation of melanin in skin tissue in a spectral region where there is no overlap with any absorption of another fluorescent tissue component. The first results with different samples of excised human skin tissue (healthy, nevus cell nevi, malignant melanoma) suggest that fluorescence excited in this way yields information on malignant transformation.     

Quantum theory of free carrier absorption in polar semiconductors

A quantum mechanica treatment of the free carrier absorption by electrons in polar semiconductors has been constructed in terms of the Kane model. It takes into account overlap wavefunction factors, intermediate states in other bands, the finite optical phonon energy, and the effects of arbitrary spin orbit splitting on the electron energy and wavefunction. The scattering mechanisms considered include polar optical mode scattering, ionic scattering, piezoelectric and deformation coupled acoustic mode scattering, and electron-electron scattering.The theory, in the appropriate limits, applies to a wide range of photon energies, electron concentrations, and lattice temperatures. It relates the dominant scattering mechanism involved in the various limits to the characteristic behavior of the absorption coefficient as a function of the photon energy. In particular, the dominant scattering mechanism for small carrier concentrations is found to be polar optical mode scattering, which exhibits a λ³ dependence of the absorption coefficient times the index of refraction, (except at the lowest frequencies, where the expected λ² dependence is obtained).Ionic, or impurity, scattering becomes important as the carrier concentration is increased, and the characteristic wavelength dependence of the electron cross section times the index of refraction varies from λ⁴ to λ³, and the absorption coefficient times the index of refraction from λ⁴ to λ², depending on the ratio of the photon energy to the initial electron energies.Comparisons are made with the available data over a wide range of photon energies, temperatures, and electron concentrations, for the III–V compounds InSb, InAs, InP, and GaAs.     

Upgrade of beamline BL08B at Taiwan Light Source from a photon‐BPM to a double‐grating SGM beamline

During the last 20 years, beamline BL08B has been upgraded step by step from a photon beam‐position monitor (BPM) to a testing beamline and a single‐grating beamline that enables experiments to record X‐ray photo‐emission spectra (XPS) and X‐ray absorption spectra (XAS) for research in solar physics, organic semiconductor materials and spinel oxides, with soft X‐ray photon energies in the range 300–1000 eV. Demands for photon energy to extend to the extreme ultraviolet region for applications in nano‐fabrication and topological thin films are increasing. The basic spherical‐grating monochromator beamline was again upgraded by adding a second grating that delivers photons of energy from 80 to 420 eV. Four end‐stations were designed for experiments with XPS, XAS, interstellar photoprocess systems (IPS) and extreme‐ultraviolet lithography (EUVL) in the scheduled beam time. The data from these experiments show a large count rate in core levels probed and excellent statistics on background normalization in the L‐edge adsorption spectrum.     

Bandwidth controllable transmission filter based on Moiré fiber Bragg grating

A new and efficient technique for fabrication of bandwidth controllable π–phase-shifted fiber Bragg grating (FBG) based on moiré grating using a uniform phase mask is demonstrated. The feasibility of writing a moiré grating into an ordinary SMF-28 fiber using stretching and double exposure by ultraviolet fringe is reported. We analyzed the relation between the initial differentia of phase of two exposures and the transmission spectrum of phase-shifted FBG. Moreover, we present a novel method to control the initial differentia of phase of two exposures. Using this technique, two kinds of resonant filters with a 3-dB line-width of 0.01 nm centered at 1553.79 nm and of 0.5 nm centered at 1554.57 nm respectively were fabricated with same uniform phase mask.     

Bandwidth controllable transmission filter based on Moiré fiber Bragg grating

A new and efficient technique for fabrication of bandwidth controllable π–phase-shifted fiber Bragg grating (FBG) based on moiré grating using a uniform phase mask is demonstrated. The feasibility of writing a moiré grating into an ordinary SMF-28 fiber using stretching and double exposure by ultraviolet fringe is reported. We analyzed the relation between the initial differentia of phase of two exposures and the transmission spectrum of phase-shifted FBG. Moreover, we present a novel method to control the initial differentia of phase of two exposures. Using this technique, two kinds of resonant filters with a 3-dB line-width of 0.01 nm centered at 1553.79 nm and of 0.5 nm centered at 1554.57 nm respectively were fabricated with same uniform phase mask.     

Theoretical analysis of optical coupling properties of the waveguide grating with novel rectangular structure

For the waveguide grating photocoupler with novel structure [Yu XQ, Zhang X, Wong KS, Xu GB, Xu XG, Ren Y, et al. A fabrication of coupling grating in the polymeric waveguide by using two-photon initiated photopolymerization. Mater Lett 2004;58:3879–83. [1]; Yu XQ, Zhang X, Xu GB, Zhao HP, He W, Shao ZS, et al. Fabrication of grating waveguide and coupling grating using two-photon initiated photopolymerization. Chem J Chin Univ 2004;25(10):1931–3 (in Chinese). [2]], the electric fields of the TE guided wave and the TE radiating wave are obtained by solving the Helmholtz equation in the spatial rectangular coordinates. And then the relations between the loss coefficient and the different structure parameters of the waveguide and grating are analyzed by using the mode coupling theories, and their corresponding numerical simulation results are given. In the end the result obtained for this novel structure and that for conventional rectangle structure are compared, and the difference and the sameness are obtained.     

Intra-cavity spectroscopy with diode lasers

A multi-mode diode laser with an external cavity is studied experimentally and theoretically for its application to intra-cavity spectroscopy. One facet of a typical Ga_0.89Al_0.11As laser diode was antireflection-coated by deposition of HfO₂ such that 10^–3 residual reflectivity was left over. This diode was placed in an external optical cavity. The emission spectrum of this diode laser is highly sensitive to any frequency-dependent loss in the cavity, and the detectivity of such a loss grows with the pump rate. Even close to threshold, the absorption at 780 nm of Rb atoms with a density of 5×10¹⁰ cm^–3 has been detected. An adequate model for diode lasers based on rate equations and including frequency-dependent gain saturation is developed and applied to the calculations of output spectra. The sensitivity of these spectra to intra-cavity absorption is determined by the overall cavity loss — which is rather high — and the fraction of spontaneous emission in the total emission, in contrast with dye lasers where it is limited by nonlinear mode coupling. Various criteria for the sensitivity are suggested. The smallest detectable absorption with a perfectly antireflection-coated laser is 10^–6 cm^–1. Improvement of the characteristics of the laser diode would increase the sensitivity.