Anisotropic superconducting properties of FeSe0.5Te0.5 single crystals

We investigated the anisotropic electrical transport and magnetic properties of FeSe$_{0.5}$Te$_{0.5}$ single crystals grown by the self-flux method. The in-plane resistivity shows a metallic-like temperature dependence, while the out-of-plane resistivity shows a broad hump with a maximum at around 64 K. The magnetization loops for $H/\!/c$-axis and $H/\!/ab$-plane are also different, for example, there is a typical second peak for $H/\!/c$-axis. The in-plane critical current density is larger than the out-of-plane one. The coherence length and penetration depth were estimated by the Ginzburg-Landau theory. The anisotropic parameter $\gamma $ depends on the applied magnetic field and the temperature. The coupling of superconducting FeSe(Te) layers and the flux pinning mechanism relevant to anisotropy are also discussed.     

Magnetic anisotropy of Fe films on GaAs(113)A substrates

We employ superconducting quantum interference device magnetometry to study the thickness dependence of in-plane and out-of-plane magnetic anisotropic properties of Fe films grown on high-index GaAs(113)A substrates by molecular beam epitaxy. The evolution of the in-plane magnetic anisotropy with film thickness is distinguished into two regions. First, for Fe film thicknesses ≤50 MLs, we observe an in-plane uniaxial magnetic anisotropy with the easy axis along the in-plane 〈332̄〉 axes. Second, for Fe film thicknesses ≥70 MLs, we observe a four-fold magnetic anisotropy with the easy axis along the in-plane 〈031̄〉 axes. The existence of an out-of-plane perpendicular magnetic anisotropy is also detected in ultrathin Fe films. Similar to Fe on GaAs(001), our results provide evidence for the interfacial origin of the in-plane uniaxial and out-of-plane perpendicular magnetic anisotropy. Both the uniaxial and the perpendicular interface anisotropy are found to be independent of the epitaxial orientation and are hence an intrinsic property of the Fe/GaAs interface. PACS 75.70.-i; 75.50.Bb; 81.15.Hi     

Thickness dependence of magnetic anisotropic properties of FeCoNd films

The magnetic FeCoNd films with thickness (t) from 50 to 166 nm were fabricated by RF magnetron co-sputtering at ambient condition. The amorphous structures of all of the films were investigated by X-ray diffraction and transmission electron microscopy. A spin reorientation transition from in-plane single domain state to out-of-plane stripe domain state was observed as a function of t. When t is below a critical thickness, magnetic moments lie in the film plane corresponding to in-plane single domain state because of the strong demagnetization energy. However, when t is increased, out-of-plane stripe domain structure was developed due to a dominated perpendicular magnetic anisotropy. Scanning electron microscopy data indicate that the perpendicular anisotropy, which is responsible for the formation of stripe domains, may result from the shape effect of the columnar growth of the FeCo grains.     

Interface biquadratic coupling and magnon scattering in exchange-biased ferromagnetic thin films grown on epitaxial FeF2

The magnetic anisotropy of ferromagnetic (FM) Ni, Co, and Fe polycrystalline thin films grown on antiferromagnetic (AF) FeF(2)(110) epitaxial layers was studied, as a function of temperature, using ferromagnetic resonance. In addition to an in-plane anisotropy in the FM induced by fluctuations in the AF short-range order, a perpendicular (biquadratic) magnetic anisotropy, with an out-of-plane component, was found which increased with decreasing temperature above the AF Neél temperature (T(N) = 78.4 K). This is a surprising result given that the AF's uniaxial anisotropy axis was in the plane of the sample, but is consistent with prior experimental and theoretical work. The resonance linewidth had a strong dependence on the direction of the external magnetic field with respect to in-plane FeF(2) crystallographic directions, consistent with interface magnon scattering due to defect-induced demagnetizing fields. Below T(N), the exchange bias field H(E) measured via FMR for the Ni sample was in good agreement with H(E) determined from magnetization measurements if the perpendicular out-of-plane anisotropy was taken into account. A low field resonance line normally observed at H ≈ 0, associated with domain formation during magnetization in ferromagnets, coincided with the exchange bias field for T < T(N), indicating domain formation with the in-plane FM magnetization perpendicular to the AF easy axis. Thus, biquadratic FM-AF coupling is important at temperatures below and above T(N).     

Out-of-plane exchange bias and magnetic anisotropy in MnPd/Co multilayers

Magnetic and structural properties in [MnPd/Co]₁₀ multilayers deposited onto Si(1 1 1) substrates have been investigated. The dependences of anisotropy and exchange bias on the thicknesses of both MnPd and Co layers have been studied. In most of the samples, the out-of-plane magnetic anisotropy and both large out-of-plane and in-plane exchange biases have been observed at cryogenic temperature below the blocking temperature T_B≈240 K. With appropriate MnPd and Co thicknesses, we have obtained samples with a large out-of-plane exchange bias along with a large out-of-plane magnetic anisotropy. The origin of the out-of-plane magnetic anisotropy in the samples has been suggested to be due to the formation of CoPd interfacial alloys which have tensile in-plane strains, while the spin structure of the antiferromagnetic layer at the interface which is believed to be responsible for exchange bias may be the same as that of the bulk material. Also, the present study shows that the interplay between the out-of-plane magnetic anisotropy and exchange bias is evident in our multilayers and plays an important role in the out-of-plane exchange-bias mechanism.     

In-plane anisotropy in two-dimensional electron gas at LaAlO_3/SrTiO_3(110) interface

A systematic study of the two-dimensional electron gas at La AlO_3/SrTiO_3(110) interface reveals an anisotropy along two specific directions, [001] and 1ī0. The anisotropy becomes distinct for the interface prepared under high oxygen pressure with low carrier density. Angular dependence of magnetoresistance shows that the electron confinement is stronger along the 1ī0 direction. Gate-tunable magnetoresistance reveals a clear in-plane anisotropy of the spin–orbit coupling,and the spin relaxation mechanism along both directions belongs to D'yakonov–Perel'(DP) scenario. Moreover, in-plane anisotropic superconductivity is observed for the sample with high carrier density, the superconducting transition temperature is lower but the upper critical field is higher along the 1ī0 direction. This in-plane anisotropy could be ascribed to the anisotropic band structure along the two crystallographic directions.     

The influences of thickness of spacing layer and the elastic anisotropy on the strain fields and band edges of InAs/GaAs conical shaped quantum dots

Based on the continuum elastic theory, this paper presents a finite element analysis to investigate the influences of elastic anisotropy and thickness of spacing layer on the strain field distribution and band edges (both conduction band and valence band) of the InAs/GaAs conical shaped quantum dots. To illustrate these effects, we give detailed comparisons with the circumstances of isolated and stacking quantum dot for both anisotropic and isotropic elastic characteristics. The results show that, in realistic materials design and theoretical predication performances of the optoelectronic devices, both the elastic anisotropy and thickness of the spacing layer of stacked quantum dot should be taken into consideration.     

Aspects of “low field” magnetotransport in epitaxial thin films of the ferromagnetic metallic oxide SrRuO3

Epitaxial thin films of the conductive ferromagnetic oxide SrRuO₃ were grown on an (0 0 1) SrTiO₃ (STO) substrate by using DC sputtering technique. The magnetic and magnetoresistive properties of the films were measured by applying the magnetic field both perpendicular (out-of-plane) and parallel (in-plane) to the film plane and ever maintaining the direction of the applied field perpendicular to that of the transport current. The films grown on an (0 0 1) STO substrate showed identical magnetization properties in two orthogonal crystallographic directions of the substrate, [1 0 0]_S and [0 0 1]_S (in-plane and out-of-plane geometry), which suggests the presence of a multi domain structure within the plane of the film. For such samples, no anisotropic field (hard axis) along de [0 0 1]s direction, i.e., perpendicular to the film-plane could be detected. Nevertheless, a distinguishable temperature dependent out-of-plane anisotropic magnetoresistance (MR) along with strong temperature dependent low field hysteretic MR(H) behavior was detected for the studied films. A negative MR ratio MR(T)=[ρ(μ₀H=9 T; T)−ρ( μ₀H=0 T; T)]/ρ( μ₀H=0 T; T) on the order of a few percent, with maximums of 6% and 4% (right at the Curie temperature, T_C 160 K) was calculated for an in-plane and out-of plane measuring geometry, respectively. In addition there is an equally strong MR effect at low temperatures, which might be related to the temperature dependence of the magnetocrystalline anisotropy together with a magnetization rotation. Both the MR(T) behavior and the achieved values (except for T<30 K) are similar to those obtained on SrRuO₃ films grown on 2° miscut (0 0 1) STO substrates with the current parallel to the field and parallel to the direction, which was identified as the easier axis for magnetization.     

Brillouin light scattering of CoFe/IrMn-based top and bottom spin-valves

The spin-wave Brillouin light scattering (BLS) was observed from CoFe/IrMn-based bottom and top spin-valve structures. The magnitude of perpendicular magnetic anisotropy of these structures was investigated by means of BLS. The experimental spin-wave frequency was simulated using a simple model which includes crystallographic, exchange, in-plane uniaxial, and in- and out-of-plane anisotropies and takes the exchange interaction between the two ferromagnetic layers into account. This enabled us to determine, in addition to the other magnetic parameters, both in- and out-of-plane anisotropy constants near the surface. It was found that the top spin-valve is in a strong out-of-plane anisotropy whereas in-plane anisotropy is dominant for the bottom spin-valve.     

Observation of large in-plane anisotropic transport in van der Waals semiconductor Nb2SiTe4

Two-dimensional (2D) van der Waals material is a focus of research for its widespread application in optoelectronics, memories, and spintronics. The ternary compound Nb₂SiTe₄ is a van der Waals semiconductor with excellent air stability and small cleavage energy, which is suitable for preparing a few layers counterpart to explore novel properties. Here, properties of bulk Nb₂SiTe₄ with large in-plane electrical anisotropy are demonstrated. It is found that hole carriers dominate at a temperature above 45 K with a carrier active energy of 31.3 meV. The carrier mobility measured at 100 K is about 213 cm²·V^-1·s^-1 in bulk Nb₂SiTe₄, higher than the reported results. In a thin flake Nb₂SiTe₄, the resistivity ratio between the crystalline axes of a and b is reaching about 47.3 at 2.5 K, indicating that there exists a large anisotropic transport behavior in their basal plane. These novel transport properties provide accurate information for modulating or utilizing Nb₂SiTe₄ for electronic device applications.     

Anisotropic property in interacting quantum wires embedded in (110) plane

We investigate the theoretically combined effect of spin-orbit interactions and Coulomb interaction on the ground state and transport property of a quantum wire oriented along different crystallographic directions in the (110) plane. We find that the electron’s ground state exhibits phase transition among spin density wave, charge density wave, singlet superconductivity and metamagnetism, which can be controlled by changing the crystallographic orientation, the strengths of the spin-orbit interactions and the Coulomb interaction. The ac conductance exhibits a significant anisotropic behavior and a out-of-plane spin polarization which can be tuned by an in-plane electric field.     

面内形状各向异性能对自旋转矩振荡器零场振荡特性的影响

利用Landau-Lifshitz-Gilbert-Slonczewski方程, 在理论上研究了由磁矩垂直于膜面的自由层和磁矩平行于膜面的极化层组成的自旋转矩振荡器的振荡特性. 数值结果表明面内的形状各向异性能, 可以使自旋转矩振荡器在无磁场情形下产生自激振荡. 此特性可以用能量平衡方程解释, 即面内形状各向异性能可以导致系统中自旋转矩提供的能量与阻尼过程所消耗的能量之间的平衡. 特别是, 面内的形状各向异性能越大, 自旋转矩振荡器的可操控电流范围越大, 并且产生微波信号的频率越大, 但其阈值电流几乎不变.     

Thickness induced magnetic anisotropic properties of Tb-Fe-Co thin films

The influence of Tb₂₅Fe₆₁Co₁₄ thin film thicknesses varying from 2 to 300 nm on the structural and magnetic properties has been systematically investigated by using of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, magnetization, and magneto-optic Kerr effect microscopy measurements. Thin film growth mechanism is pursued and controlled by ex-situ X-ray refractometry measurements. X-ray diffraction studies reveal that the Tb₂₅Fe₆₁Co₁₄ films are amorphous regardless of thin films thicknesses. The magnetic properties are found to be strongly related to thickness and preferred orientation. With an increase in film thickness, the easy axis of magnetization is reversed from in-plane to out-of-plane direction. The change in the easy axes direction also affects the remanence, coercivity and magnetic anisotropy values. The cause for the magnetic anisotropy direction change from in-plane to out-of-plane can be related to the preferred orientation of the thin film which depends on the large out-of-plane coercivity and plays an important role in deciding the easy axes direction of the films. According to our results, up to the 100 nm in-plane direction is dominated over the whole system under major Fe-Fe interaction region, after that point, the magnetic anisotropy direction change to the out-of-plane under major Tb-Fe/Tb-Co interaction region and preferred orientation dependent perpendicular magnetic anisotropic properties become more dominated with 2.7 kOe high coercive field values.     

Huge excitonic effects in layered hexagonal boron nitride

The all-electron GW approximation energy band gap of bulk hexagonal boron nitride is shown to be of indirect type. The resulting computed in-plane polarized optical spectrum, obtained by solving the Bethe-Salpeter equation for the electron-hole two-particle Green function, is in excellent agreement with experiment and has a strong anisotropy compared to out-of-plane polarized spectrum. A detailed analysis of the excitonic structures within the band gap shows that the low-lying excitons belong to the Frenkel class and are tightly confined within the layers. The calculated exciton binding energy is much larger than that obtained by Watanabe et al. [Nat. Mater. 3, 404 (2004).] based on a Wannier model assuming h-BN to be a direct-band-gap semiconductor.     

PEMFC气体扩散层内各向异性传递过程数值模拟

质子交换膜燃料电池(PEMFC)气体扩散层(GDL)具有各向异性属性,常规数值模拟对GDL采取均匀模型,忽略了各向异性传递过程对PEMFC性能的影响。本文发展了一个三维非等温单相模型,在GDL平面内和GDL厚度方向采用不同的传递系数,模拟了各向异性传递系数对PEMFC整体和局部性能的影响。在本文计算条件下,GDL各向异性和均匀模型模拟得到的电池极化曲线几乎完全相同,但电池电流密度分布和温度分布等局部特性存在很大差异。该结果进一步证明了不能单独用极化曲线来验证电池数学模型的正确性。     

Magnetic microstructure of the spin reorientation transition: a computer experiment

The scenario of the spin reorientation in two-dimensional films within first-order anisotropy approximation is theoretically studied by means of Monte Carlo simulations. The magnetic microstructure is investigated as a function of the ratio of the perpendicular anisotropy energy to the dipolar one. If the anisotropy dominates, out-of-plane domains will be found while in-plane vortices appear for a vanishing anisotropy. In the range of comparable anisotropy and dipolar energies a complex domain pattern evolves yielding a continuous transition between the two structures. The structure with equally distributed magnetic moment orientations is stable at the point where anisotropy and dipolar energies cancel each other.     

Low-dimension self-interstitial diffusion in α-Zr

The mobility of self-interstitials in α-zirconium (α-Zr) is studied with molecular dynamic (MD) and molecular static (MS) simulations, using Ackland’s many-body inter-atomic potential. The basal crowdion configuration is found to be the ground state. Four types of diffusion jumps can be identified via MS, in-plane in-line, in-plane off-line, out-of-plane in-line and out-of-plane off-line. The in-plane migration is dominated by one-dimensional crowdion motion along the [110] directions, interrupted from time to time by off-line or out-of-plane jumps. Based on the MS results, the activation energies and pre-exponentials for the diffusion processes are determined by fits to the Arrhenius plots of D_c and D_a. The diffusional anisotropy factor D_c/D_a is also obtained, and compares well with experimental results. The mean frequency of each type of jumps is then found using Monte Carlo simulation, and is reported as a function of temperature. The mean lifetime and mean free path of the one-dimensional mobility are then obtained. The 1-D mean free path is found to be unimportant for sink separations involved under the usual irradiation damage conditions. Received: 4 March 2002 / Accepted: 4 April 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. E-mail: Chung.Woo@polyu.edu.hk     

Nuclear resonance measurements of CePd2Ga3

CePd₂Ga₃, a Kondo lattice exhibiting ferromagnetic order below T _C = 6.3 K, has been studied using Ga NMR technique. Measurements of the magnetic susceptibility on an oriented sample proved the strong anisotropy of this quantity, whose major component is in the basal plane. From the analysis of NMR spectra of differently oriented samples, the quadrupole parameters and the temperature-dependent anisotropic Knight-shift have been determined. While the anisotropy of the susceptibility can sufficiently account for the axial anisotropy of the ⁷¹Ga Knight shift, the in-plane anisotropy of the shift points towards dipolar effects enhanced by hybridization of the Ce-4f and Ga-s electrons.     

Strong Anisotropic Thermal Conductivity in Polycrystalline Layers of (AgxSn1-xS)1.2(TiS2)2 with Prospects Toward Improved Thermoelectric Performance

Anisotropic tuning is of crucial importance for designing and developing high-performance thermoelectric materials. Here, a prominent anisotropic thermoelectric characteristic of Ag-substituted misfit-layered (SnS)_1.2(TiS₂)₂ alloys is investigated in the perpendicular (in-plane) and parallel (out-of-plane) to the pressing direction. In the in-plane direction, the (Ag_xSn_1-xS)_1.2(TiS₂)₂ alloys possess a highest power factor of 0.86 mW K⁻² m⁻¹ at 520 K, while in the out-of-plane direction the lowest lattice thermal conductivity (0.37 W K⁻¹ m⁻¹) is achieved, which is driven by the natural intercalated structure where the out-of-plane phonon is strongly scattered without affecting the in-plane mobility. Moreover, along the in-plane orientation, the introduced point defects due to the substitution of Sn by Ag trigger a significant reduction of lattice thermal conductivity. In contrast, along the out-of-plane orientation, the decreased carrier concentration enables a large Seebeck coefficient and power factor, ultimately ensuring high thermoelectric performance. The present finding in the misfit-layered chalcogenide opens up a new route to manipulating thermoelectrics via anisotropy engineering.     

Exact results for the dynamics of the classical one dimensional easy plane ferromagnet at low temperatures

The in-plane and out-of-plane dynamical correlation functions for the classical one dimensional easy plane ferromagnet are calculated asymptotically exactly at low temperatures. The results are restricted to temperatures much below the crossover temperature at which spins begin aligning in the plane. The long wavelength behavior of the in-plane fluctuations is consistent with dynamical scaling, in contrast to the isotropic case, and agrees with the results of Villain and of Nelson and Fisher. The linewidths for the in-plane fluctuations at short wavelengths are calculated exactly, and approach those of the isotropic model for small anisotropy. The theory of Villain, the theory of Cieplak and Sjolander, and the simulations of Loveluck, Jauslin, Schneider and Stoll all give incorrect results for these linewidths. The out of plane linewidths show an anomalous temperature dependence due to a singularity in the three spin wave density of states that is characteristic of one dimensional systems. The linewidth is proportional toT ² lnT except at the wavevector for which the second derivative of the spin wave frequency with respect to wavevector vanishes (/2 for CsNiF₃) where the linewidth is proportional toT ^5/3. The linewidth has a strong discontinuity as the wavevector increases as a result of a catastrophe occurring in the calculation of the three spin wave density of states. The position and strength of the discontinuity are temperature dependent. The diffusion coefficient is logarithmically dependent on the anisotropy, and diverges as (T ² lnD)^–1, which is consistent with the (lnT)^–1 behavior predicted for the isotropic ferromagnet in earlier work. The results are derived for the case of single ion anisotropy, using a spin wave theory for static correlations and the spin current damping function, and can be readily extended to the case of anisotropic exchange.