Soft norm-conserving pseudopotential for carbon

A soft, norm-conserving pseudopotential for carbon is presented and its performance tested by calculations on atomic states and on diamond: electronic energy levels of different atomic configurations, equilibrium lattice constant, bulk modulus, and the TA(X) frozen-phonon frequency are accurately reproduced. Convergence of the total energy of diamond with the size of the plane-wave basis set is compared for several frequently used pseudopotentials, and it is shown that calculations with the reported pseudopotential can be performed at considerably lower cost than with the other norm-conserving pseudopotentials, without loosing the accuracy of the latter in predicting structural and dynamical properties. The rapid convergence of the results with the plane-wave cutoff is comparable to the performance of the Vanderbilt's ultrasoft pseudopotentials. The transferability of the pseudopotential to other electronic configurations is discussed. Received 8 September 1999     

Electronic structure of barium hexaboride

The electronic structure and the Fermi surface BaB₆ are studied as a function of doping in a conventional bandstructure approach based on the local density approximation to density functional theory (LDA). In particular it is shown that magnetic breakthrough can occur between the two sheets of the Fermi surface disconnected by electron-hole mixing and the spin-orbit interaction. It is further suggested that angle-resolved photoemission will see a single ellipse in the (100) plane for certain doping values, due to the finite energy/momentum resolution of the method. Transport properties, computed within Bloch-Boltzmann theory, are also presented. The bare plasma energy is found to be 0.6 eV in the stoichiometric compound. Received 23 May 2000     

Evolution of the electronic structures of NixSiy ordered systems: experimental and theoretical investigations

We study the change of the electronic structures of nickel silicides, Ni₃Si and NiSi₂, as well as nickel and silicon through the evolution of their valence band X-ray photoelectron spectra (v-XPS) both experimentally and theoretically. The experimental spectra are compared to the total and partial densities of states using tight-binding linear muffin-tin orbital method (TB-LMTO) in the atomic sphere approximation (ASA). Good agreement is found between theory and experiment. Received 10 July 2000     

Electronic structure and lattice properties of zinc-blende InN under high pressure

Dependencies of electronic structure and lattice properties of InN with zinc-blende structure on hydrostatic pressure are presented based on band structures computed using the empirical pseudopotential method. The pressure behavior of the pseudopotential form factors have been analyzed. The effect of pressure on the density of states has been examined. Trends in bonding and ionicity under pressure are also discussed. Our results show as well that the absolute value of the Fourier transform of the valence charge density might be useful in the prediction of the phase transition in zinc-blende materials. Received 25 May 2001 and Received in final form 16 January 2002     

First-principles electronic structure of rare-earth arsenides

The electronic properties of rare-earth arsenides have been calculated from first principles. In the calculations we have treated the rare-earth f electrons both as core-like and as valence-like electrons. We consider the changes in the energy bands and in the density of states near the Fermi level which are found to be relevant, except for the case of LuAs, and discuss this in relation with the role played from the rare-earth 5d derived states. Moreover we show that the rare-earth 5d related bands are particularly sensitive to the variation of the lattice constant; change in the lattice constant of less than 1% leads to a different behaviour with respect to the crossing of the rare-earth 5d derived bands and the As 4p derived bands along the Δ-direction. This point is discussed in connection with the possibility of having a semimetal-semiconductor transition in the rare-earth arsenides. Received 22 February 2001     

Electronic structural and magnetic properties of cadmium chalcogenide beryllosilicate sodalites

Density functional self-consistent spin-polarized calculations with the Discrete Variational Method were performed to obtain the electronic structures of cadmium chalcogenide beryllosilicate sodalites Cd₈[BeSiO₄]₆Z₂ and their bulk materials CdZ (Z = S, Se, Te). Similar as their bulk materials, these sodalites are also semiconductors. From their density of states and charge distributions, it was found that there is greater localization of the electron density in the sodalites compared with that of the bulk. The band gaps in their bulk compounds are different from those in the sodalite structures due to the electrons of Si, Be and O filled in. Different from their bulk materials, the d electrons of Cd play an important role to form an unseparated valence band with all orbitals of other elements. The calculated magnetic moments of these three materials are very small since all d atomic orbitals are fully occupied. Received: 28 March 1997 / Revised: 18 July 1997 / Accepted: 9 September 1997     

Electronic structure of LiMnO : X-ray emission and photoelectron spectra and band structure calculations

The electronic structure of LiMnO₂ and Li₂MnO₃ was studied by means of X-ray photoelectron and soft X-ray emission spectroscopy. For LiMnO₂, LSDA and LSDA+U calculations were carried out. The LSDA+U calculations are in rather good agreement with the measured valence-band structure as well as with the magnetic and electrical properties of LiMnO₂. It is shown that the band gap in LiMnO₂ is determined by the charge-transfer effect. Received 15 March 1999 and Received in final form 14 July 1999     

Electronic structure of F,-center in MgO

The embedded-cluster numerical variational method has been developed to calculate the electronic structure of perfect MgO, F and F⁺-centers in MgO. The energy band, bulk density of states has been calculated by cluster Mg₁₄O₁₃, Mg₁₄O₁₂F⁺ and Mg₁₄O₁₂F. The calculated absorption energy for F⁺ and F centers is in good agreement with experimental data. In our calculated defect energy levels, that the first excited state of F⁺-center is at CB-3.46 eV, indicates the necessity of a large photoelectron yielding energy. We also calculate the radius of color center electron, and plot the map of charge-density distribution of valence electrons in which the structure of the color center is shown directly. Received 22 May 1998     

Electronic structure and magnetism of disordered bcc Fe alloys

We study the electronic structure and magnetic properties of disordered bcc Co_xFe_1-x, Cr_xFe_1-x and Mn_xFe_1-x alloys in their ferromagnetic phases using the Augmented Space Recursion (ASR) technique coupled with the tight-binding linearized muffin tin orbital (TB-LMTO) method. We calculate the density of states and magnetic moment of these alloys to show the variation upon alloying Fe with the other neighbouring 3d transition metals using arguments based on charge transfer, exchange splitting and hybridization effects. Received 10 April 2001 and Received in final form 15 August 2001     

Viable improvement of the full potential linearized augmented plane wave (FLAPW) method

A characteristic feature of the Full Potential Linearized Augmented Plane Wave (FLAPW)-method consists in the spatial subdivision of the charge density analogous to that of the one-particle wavefunctions, i.e. into a portion that is expanded in terms of spherical harmonics Y_lm inside the muffin-tin spheres and into a plane wave expansion of the interstitial charge density. To obtain the Hartree potential inside the spheres one is hence forced to solve a boundary value problem at the sphere surface. In addition, in all non-equivalent spheres each (l,m)-component of the charge density is mapped onto 300-400 radial grid points. To ensure an accelerated convergence of the calculation, the pertinent schemes require this rather large data set to be stored and mixed within 3-6 iteration steps. We show and illustrate for the example of a spin-polarized Ni-film with and without an oxygen overlayer and for bulk Si that this data set can be compressed by at least two orders of magnitude if one partitions the charge density in a different way so that the relevant portion determining the interatomic bonding can be Fourier expanded throughout the lattice cell. One thereby arrives at a modified FLAPW-scheme that combines favorable features of the original method with virtues of the pseudopotential method which consist in the simple construction of the Hartree potential and the efficient way of achieving self-consistency. These advantages can be exploited to the fullest by using Fast Fourier Transform. Moreover, forces that atoms experience in off-equilibrium positions attain a particularly simple form in terms of the charge density expansion coefficients. Received: 31 May 1997 / Revised: 12 December 1997 / Accepted: 18 December 1997     

Determination of the density of states in high-Tc thin films using FET-type microstructures

A simple electronic experiment using a field-effect-transistor–type microstructure is suggested. The thin superconductor layer forms the source-drain channel of a layered structure across which an AC current is applied. It is found necessary to measure the second harmonic of the source-gate voltage, and the third harmonic of the source-drain voltage; these electronic measurements then give the logarithmic derivative of the density of states, which is an important consideration when fitting parameters of the band structure.     

Band gaps and charge distribution in quasi-binary (GaSb) (InAs) crystals

Pseudopotential investigation of energy band gaps and charge distribution in quasi-binary (GaSb)_1-x(InAs)_x crystals has been reported. To the best of our knowledge, there had been no reported theoretical work on these materials. In agreement with experiment, the quasi-binary crystals of interest showed a significant narrowing of the optical band gap compared to the conventional Ga_xIn_1-xAs_ySb_1-y quaternary alloys (with x = 1 - y). Moreover, the absorption at the optical gaps indicated that (GaSb)_1-x(InAs)_x is a direct Γ to Γ band-gap semiconductor within a whole range of the x composition. The information derived from the present study predicts that the band gaps cross very important technological spectral regions and could be useful for thermophotovoltaic applications. Received 30 August 2002 Published online 1st April 2003 RID="a" ID="a"Present address: Physics Department, University of M'sila, 28000 M'sila, Algeria e-mail: N_Bouarissa@yahoo.fr     

Born effective charge reversal and metallic threshold state at a band insulator-Mott insulator transition

We study the quantum phase transition between a band (“ionic”) insulator and a Mott-Hubbard insulator, realized at a critical value in a bipartite Hubbard model with two inequivalent sites, whose on-site energies differ by an offset . The study is carried out both in D=1 and D=2 (square and honeycomb lattices), using exact Lanczos diagonalization, finite-size scaling, and Berry's phase calculations of the polarization. The Born effective charge jump from positive infinity to negative infinity previously discovered in D=1 by Resta and Sorella is confirmed to be directly connected with the transition from the band insulator to the Mott insulating state, in agreement with recent work of Ortiz et al. In addition, symmetry is analysed, and the transition is found to be associated with a reversal of inversion symmetry in the ground state, of magnetic origin. We also study the D=1 excitation spectrum by Lanczos diagonalization and finite-size scaling. Not only the spin gap closes at the transition, consistent with the magnetic nature of the Mott state, but also the charge gap closes, so that the intermediate state between the two insulators appears to be metallic. This finding, rationalized within Hartree-Fock as due to a sign change of the effective on-site energy offset for the minority spin electrons, underlines the profound difference between the two insulators. The band-to-Mott insulator transition is also studied and found in the same model in D=2. There too we find an associated, although weaker, polarization anomaly, with some differences between square and honeycomb lattices. The honeycomb lattice, which does not possess an inversion symmetry, is used to demonstrate the possibility of an inverted piezoelectric effect in this kind of ionic Mott insulator. Received 21 May 1999     

Aharonov-Bohm effect in one-channel weakly disordered rings

A new diagrammatic method, which is a reformulation of Berezinskii's technique, is constructed to study the density of electronic states of a one-channel weakly disordered ring, threaded by an external magnetic flux. The exact result obtained for the density of states shows an oscillation of with a period of the flux quantum . As the sample length (or the impurity concentration) is reduced, a transition takes place from the weak localization regime () to the ballistic one (). The analytical expression for the density of states shows the exact dependence of on the ring's circumference and on disorder strength for both regimes. Received 27 December 1999     

The electronic properties of SiCAlN quaternary compounds

We have investigated the properties of SiCAlN quaternary compounds composed of SiC and AlN polytypes by first-principle calculations. We find that their band gaps have a large tunability and are sensitive to the polytype structures. Their electronic properties vary from wide-band-gap semiconducting to metallic due to the complex charge transfer between the two constituents SiC and AlN. The formation energies are also calculated. These results show SiCAlN quaternary compounds have potential applications in the electronic devices that can be tuned over a large wavelength range.     

Magneto-electronic properties of the AA- and ABC-stacked graphites

In this study, we apply the tight-binding method to magneto-electronic properties of the AA- and ABC-stacked graphites, which are strongly dependent on the interlayer interactions, the magnetic field, and the stacking sequences. First of all, the interlayer interactions induce the significant changes in the energy dispersions, the band symmetry about the Fermi level, the overlap between valence and conduction bands, the band width, and the band-edge states or the symmetry points. Then, the magnetic field induces the Peierls phase in the Bloch functions and thus strongly affects the energy dispersions of the Landau Levels, the subband spacings, the energy width, and the special structures in density of states (DOS). Finally, the stacking sequences dominates over the low-energy band overlap and the anisotropy of energy bands. The effects mentioned above are exactly reflected in the density of state. Here, DOS exhibits the 3D, 2D, and 1D characteristics.     

Electronic structure of spin-chain compounds: common features

The incommensurate composite systems M₁₄Cu₂₄O₄₁ (M = Ca, Sr, La) are based on two fundamental structural units: CuO₂ chains and Cu₂O₃ ladders. We present electronic structure calculations within density functional theory in order to address the interrelations between chains and ladders. The calculations account for the details of the crystal structure by means of a unit cell comprising 10 chain and 7 ladder units. It turns out that chains and ladders can be treated independently, which allows us to introduce a model system based on a reduced unit cell. For the CuO₂ chains, we find two characteristic bands at the Fermi energy. Tight binding fits yield nearest and next-nearest neighbour interactions of the same order of magnitude.     

Electrical resistivity of the Ti\mathsf{_4}O\mathsf{_7} Magneli phase under high pressure

The electronic and positronic properties of the pentanary semiconductor alloys Ga_xIn_1-xP_ySb_zAs_1-y-z lattice matched to GaSb have been studied. The electron wave function is calculated semiempirically using the pseudopotential band model under the virtual crystal approximation. The positron wave function is evaluated under the point core approximation for the ionic potential. Electronic and positronic quantities namely, electronic structure and band gaps, positron band structure, effective mass and affinity, and electron-positron momentum densities have been predicted and their dependence on the phosphorus composition has been discussed. Received 30 August 2002 / Received in final form 12 February 2003 Published online 24 April 2003     

Influence of vacancies on the electronic structure of Co ZrSn Heusler alloys

The electronic structure of the Co_2-xZrSn Heusler alloys has been studied by X-ray photoelectron spectroscopy (XPS). XPS valence band spectra can be compared with ab initio electronic structure calculations using the linearized muffin-tin orbital (LMTO) method. The calculated magnetic moments per Co atom agree well with the moments obtained from experiment. The LMTO calculations also show the energy shifts of the Co, Zr and Sn valence electron states towards the Fermi level when the concentration of vacancies increases in these alloys. Received 9 March 1999 and Received in final form 6 May 1999     

A density functional study of plutonium dioxide

The electronic and geometric structures of bulk PuO₂ and its (110) surface have been studied using a periodic model within the generalized gradient approximation (GGA) of density functional theory (DFT). The sixty core electrons of the Pu atom have been represented by a relativistic effective core potential and scalar relativistic effects have been incorporated on the valence orbitals. For bulk PuO₂, we predict an equilibrium lattice constant of 10.10 a.u. and a cohesive energy of 17.28 eV, in good agreement with experimental data. For the (110) surface, upon relaxation, the distance between the top layer and the next layer is found to decrease by 0.12 ?, i.e. 5.3% of the corresponding interlayer distance in the bulk. The distance between the two oxygen atoms on the top layer is found to increase by 0.15 ?, i.e. 5.6% of the corresponding bulk value. The small surface relaxation energy of 0.268 eV per unit cell indicates the fair stability of this surface. The effective charges on Pu and O atoms show that the chemical bonding in this system is not purely ionic. Together with the metallic feature of the density of states (DOS) on the surface, the effective charge distribution provides some basis for understanding surface reactivity and corresponding support for catalysis. Received 16 June 2000