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Tandem organic light-emitting diodes (OLEDs) with the buffer-modified fullerene/copper phthalocyanine (LiF/C60/CuPc/MoO3) as interconnector have been investigated. The properties of tandem OLEDs are dependent on electric field, which is induced by electric-field-dependence of charge generation (by electric filed and photons) and separation in such an interconnector structure. At low electric field, because of less generated-charges and light-absorption of C60/CuPc film, current efficiency and brightness of tandem OLEDs with two emissive units exhibit less than twice higher than those of conventional single-unit device. But more than twofold enhancement of current efficiency and brightness is observed at higher electric field due to a large number of charges generated in the interconnector. Meanwhile, the performance of tandem devices is affected by the thickness of C60 and CuPc. The optimal thickness is related to their exciton diffusion length. 相似文献
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主要报道在器件结构为玻璃衬底/Ag(阳极)/NPB(空穴传输层)/Alq3(电子传输及发光层)/Sm(半透明阴极)/Alq3的顶发射有机电致发光器件中,利用氧等离子体对阳极银的表面进行处理来降低阳极和空穴传输层(Ag/NPB)界面处的空穴注入势垒,提高顶发射有机电致发光器件的性能。主要研究了氧等离子体处理时间对阳极银和顶发射有机电致发光器件光电特性的影响。紫外光电子能谱表明,氧等离子体处理能有效降低Ag/NPB界面处的空穴注入势垒。通过优化处理时间获得最佳器件性能,优化后的器件最大效率可达6.14cd/A。 相似文献
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Tandem organic light-emitting diode with molybdenum tri-oxide thin film interconnector layer 下载免费PDF全文
A 10-nm thickness molybdenum tri-oxide (MoO3) thin film was used as the interconnector layer in tandem organic light-emitting devices (OLEDs). The tandem OLEDs with two identical emissive units consisting of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB)/tris(8-hydroxyquinoline) aluminum (Alq3) exhibited current efficiency-current density characteristics superior to the conventional single-unit devices. At 20 mA/cm2, the current efficiency of the tandem OLEDs using the interconnector layers of MoO3 thin film was about 4.0 cd/A, which is about twice of that of the corresponding conventional single-unit device (1.8 cd/A). The tandem OLED showed a higher power efficiency than the conventional single-unit device for luminance over 1200 cd/m2. The experimental results demonstrated that a MoO3 thin film with a proper thickness can be used as an effective interconnector layer in tandem OLEDs. Such an interconnector layer can be easily fabricated by simple thermal evaporation, greatly simplifying the device processing and fabrication processes required by previously reported interconnector layers. A possible explanation was proposed for the carrier generation of the MoO3 interconnector layer. 相似文献
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Tandem organic light-emitting diode with a molybdenum tri-oxide thin film interconnector layer 总被引:1,自引:0,他引:1 下载免费PDF全文
A 10-nm-thick molybdenum tri-oxide(MoO3) thin film was used as the interconnector layer in tandem organic lightemitting devices(OLEDs).The tandem OLEDs with two identical emissive units consisting of N,N-bis(naphthalen-1-yl)N,N-bis(phenyl)-benzidine(NPB) /tris(8-hydroxyquinoline) aluminum(Alq3) exhibited current efficiency-current density characteristics superior to the conventional single-unit devices.At 20 mA/cm2,the current efficiency of the tandem OLEDs using the interconnector layers of MoO3 thin film was about 4.0 cd/A,which is about twice that of the corresponding conventional single-unit device(1.8cd/A).The tandem OLED showed a higher power efficiency than the conventional single-unit device for luminance over 1200cd/m2.The experimental results demonstrated that a MoO3 thin film with a proper thickness can be used as an effective interconnector layer in tandem OLEDs.Such an interconnector layer can be easily fabricated by simple thermal evaporation,greatly simplifying the device processing and fabrication processes required by previously reported interconnector layers.A possible explanation was proposed for the carrier generation of the MoO3 interconnector layer. 相似文献
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由于有机电致发光器件(Organic light-emitting devices,OLEDs)的主动发光、高亮度等优点,在显示和照明领域有极大的应用前景。报道了纳米ZnO薄膜对这种发光器件性能的影响。在普通有机电致发光器件空穴传输层和发光层之间直接蒸镀一层纳米ZnO薄膜,当纳米ZnO薄膜的厚度为1nm时,器件的电流效率可达3.26cd/A,是没有纳米ZnO薄膜同类器件的1.24倍。适当厚度的纳米ZnO薄膜降低了发光层空穴的浓度,提高了电子和空穴的平衡,从而提高了器件的效率。 相似文献
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通过引入(NPB/MoO3)x/NPB作为空穴传输层,获得了低驱动电压的有机电致发光器件(OLEDs),(NPB/MoO3)x为多层结构(x为0,1和2).通过对比发现,在相同亮度下,x=1对应的器件具有最低的工作电压.这是由于在NPB和MoO3之间产生了电荷转移复合物(charge transfer,CT),这将会降低器件的空穴注入势垒,从而降低其工作电压,文中所研究器件为基于8-羟基喹啉铝(tris(8-hydroxyquino-line)aluminum,Alq3)的绿光器件.与x=0时的普通器件相比,在亮度为1 000 cd·m-2时,x=1时的工作电压降低了 0.8 V. 相似文献
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We demonstrate a high eftlciency top-emitting polymer light-emitting diode (TPLED) with chromium (Cr) taking as the anode. The TPLED structure is Cr/poly-3, 4-ethylenedioxythiophene (PEDOT:PSS)/poly [2-(4-3',7'- dimethyloctyloxy)-phenyl]-p-phenylenevinylene) (P-PP V) /Ba/Ag. The Cr ( 100 nm) anode is prepared by sputterdepositing in a vacuum chamber. It is found that the device emissive properties are affected dramatically by the thickness of both PEDOT:PSS and the Ag cathode. Optimized thicknesses of PEDOT:PSS and Ag layer are 60nm and 15nm, respectively. The diode exhibits excellent electroluminescence (EL) properties, such as a turn-on voltage of 3.32 V, luminous eftlciency of 4.41 cd/A and luminance of 6989cd/m^2 at driving voltage of about 9 V. 相似文献
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Tetraalkyl-substituted zinc phthalocyanines used as anode buffer layers for organic light-emitting diodes 下载免费PDF全文
《中国物理 B》2020,(1)
Two soluble tetraalkyl-substituted zinc phthalocyanines(ZnPcs) for use as anode buffer layer materials in tris(8-hydroxyquinoline)aluminum(Al_(q3))-based organic light-emitting diodes(OLEDs) are presented in this work. The holeblocking properties of these Zn Pc layers slowed the hole injection process into the Al_(q3) emissive layer greatly and thus reduced the production of unstable cationic Al_(q3)(Alq_3~+) species. This led to the enhanced brightness and efficiency when compared with the corresponding properties of OLEDs based on the popular poly-(3, 4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT: PSS) buffer layer. Furthermore, because of the high thermal and chemical stabilities of these Zn Pcs, a nonaqueous film fabrication process was realized together with improved charge balance in the OLEDs and enhanced OLED lifetimes. 相似文献
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Improved performances of the organic light-emitting devices by doping in the mixed layer 总被引:4,自引:0,他引:4
Gao W.B. Sun J.X. Yang K.X. Liu H.Y. Zhao J.H. Liu S.Y. 《Optical and Quantum Electronics》2003,35(13):1149-1155
The brightness, efficiency and lifetime of organic light-emitting diodes (OLEDs) were remarkably improved by doping in a mixed layer. In this device, the emitting layer consists of a mixture of -naphthylphenybiphenyl amine (NPB), tris (8-hydroxyquinolinolate) aluminum (Alq3) (referred to as the mixed layer) and an emissive dopant 5,6,11,12-petraphenylnaphthacene (rubrene), where the concentration of NPB declined while the concentration of Alq3 was increased gradually in the deposition process. The device exhibited a maximum emission of 49,300 cd/m2 at a destroy voltage of 35 V and a maximum efficiency of 7.96 cd/A at 10 V, respectively. The efficiency improves twofold in comparison with the conventional doped devices. Meanwhile, the device exhibited superior operational stability with a half-life time of 1000 h at a starting luminance of 1000 cd/m2 by a constant current driver. 相似文献
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Recombination zone and efficiency in bipolar single layer light-emitting devices: a numerical study 总被引:1,自引:0,他引:1
Ying-Quan Peng Qing-Sen Yang Hong-Wei Xing Xun-Shuan Li Jian-Ting Yuan Chao-Zhu Ma Run-Sheng Wang 《Applied Physics A: Materials Science & Processing》2008,93(2):559-564
The efficiency of organic light-emitting devices (OLEDs) is closely related to the position and width of recombination zone
(RCZ) in the emission layer. Based on the drift–diffusion theory of carrier motion in semiconductors, we developed a numerical
model for the position and width of the RCZ in bipolar single layer OLEDs. The calculation results show that for a given operation
voltage, the position and width of the RCZ are determined by the mobility difference of electrons and holes, and the energy
barrier at the two contacts. When the anode and cathode contact are both ohmic, then RCZ will be near the electrode, from
which the low-mobility carriers are injected, and the smaller the mobility difference, the wider the RCZ, and the width of
RCZ will be maximal when the mobility of holes and electrons are equal. When the anode contact is Schottky, while the cathode
contact is ohmic, then the position and width of RCZ will be determined by both the mobility difference and hole–injection
energy barrier. When μ
p<μ
n, the RCZ will be at the anode side. When μ
p>μ
n, then RCZ will move away from the anode and become wider, with the increase of the hole injection barrier. For a given hole–injection
barrier and mobility of holes and electrons, the position and width of RCZ change with the applied voltage. 相似文献
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A novel silicon-on-insulator(SOI) high breakdown voltage(BV) power device with interlaced dielectric trenches(IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer,which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges(holes) at the corner of IDT.The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. 相似文献
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在溶液法制备有机电致发光器件(OLEDs)的研究中, PEDOT∶PSS由于具有较好的成膜性与高透光性而常被用作器件的空穴注入层。但相关研究表明, PEDOT∶PSS本身稳定性较差以及功函数较低,这使得溶液法制备OLEDs的性能差且不稳定。蓝色作为全彩色的三基色之一,制备高效的蓝光器件对于实现高质量显示器件和固态照明装置必不可少。而目前溶液法制备蓝光OLEDs的器件效率普遍较差,针对此问题,本文利用传统的蓝光热激活延迟荧光发光(TADF)材料DMAC-DPS作为发光层,用溶液法制备了蓝光TADF OLEDs,通过在PEDOT∶PSS中掺杂PSS-Na制备混合空穴注入层(mix-HIL)来提高空穴注入层的功函数,研究其对于蓝光TADF OLEDs器件性能的影响。首先在PEDOT∶PSS水溶液中掺入不同体积的PSS-Na溶液,在相同条件下旋涂制膜,进行器件制备。通过观测各个实验组器件的电致发光(EL)光谱,发现掺入PSS-Na后器件EL谱存在光谱蓝移的现象,这是由于掺入PSS-Na水溶液后, mix-HIL层的厚度有所降低,使得在微腔效应作用下, EL光谱发生蓝移。通过对比各组器件的电流密度-电压-亮度(J-V-L)曲线及其计算所得器件的电流效率,结果显示随着PSS-Na的掺入,器件的亮度和电流都有所增大,器件的电流效率也得到了提升,当掺杂比例为0.5∶0.5(PEDOT∶PSS/PSS-Na)时提升幅度最大(亮度提升86.7%,电流效率提升34.3%)。通过在瞬态电致发光测试过程中施加或撤去驱动电压观测了器件EL强度的变化,分析了在混合空穴注入层/发光层(mix-HIL/EML)界面处的电荷积累情况。实验证明,通过在PEDOT∶PSS中掺杂PSS-Na制备mix-HIL获得了蓝光TADF OLEDs器件性能的提升,这是一个获得高效率溶液法制备OLEDs的可行方法。 相似文献
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Fabrication of organic light-emitting diodes (OLEDs) and lasers on silicon substrates is a feasible route to integrate microelectronic chips with optical devices for telecommunications. However, the efficiency of Si-anode based OLEDs is restricted by the imbalance of hole-electron injection because a p-type Si anode owns better hole injection ability than ITO. We have used fluorinated tris-(8-hydroxy-quinolinato) aluminum (FAlq3) derivatives to prepare Si-anode based OLEDs. We observed that, when tris-(5-fuloro-8-hydroxyquinolinato) aluminum (5FAlq3) is used as the electron-transporting material instead of Alq3, the cathode electron injection is enhanced due to its lower lowest unoccupied molecular orbital (LUMO) compared to the Alq3. The device can keep the relative carrier balance even when a Si anode capable of stronger hole injection was used. Further optimization of the device structure by introducing 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as a hole blocking layer showed significant increase in the device power efficiency from 0.029 to 0.462 lm/W. This indicates that use of fluorinated Alq3 derivatives is an effective way to improve the performance of Si-anode based OLEDs. 相似文献
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Improved outcoupling efficiency of organic light emitting diodes (OLEDs) is demonstrated by incorporating a nanostructured indium tin oxide (NSITO) film between a conducting anode and a glass substrate. NSITO film was fabricated using rf-sputtering at oblique angle (85°). Significant reduction in refractive index and improved transmission of NSITO film was observed. OLEDs were then fabricated onto NSITO film to extract the ITO-glass waveguided modes. Extraction efficiency was enhanced by 80% without introducing any detrimental effects to operating voltage, current density, and angular invariance of emission spectra of OLEDs. 相似文献
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《Current Applied Physics》2009,9(4):722-726
The effect of doping level of tetrabutylammonium hexafluorophosphate (TBAPF6) on the performance of single-layer organic light emitting diodes (OLEDs) with ITO/PVK:PBD:TBAPF6/Al structure were investigated where indium tin oxide (ITO) was used as anode, poly(9-vinylcarbazole) (PVK) as hole-transporting polymeric host, 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) as electron-transporting molecule and aluminium (Al) as cathode. It was found that the doped devices underwent a unique transition at the first voltage scan as indicated by drastically increasing of current at certain applied voltage. After the transition, the threshold voltage for current injection as well as the turn-on voltage decreased significantly as compared to the undoped device. The current injection threshold voltage and turn-on voltage decreased with the increase of TBAPF6 doping level. More importantly, a relatively low current injection threshold voltage of 3 V has been achieved by doping a significant amount of TBAPF6 (weight ratio greater than five) in the single-layer OLED based on PVK:PBD blend films with high work function Al metal as cathode. The significant improvement was attributed to the reduction of both electron and hole injection energy barriers caused by accumulation of ionic species at the interface. 相似文献
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Jae-Sung Lim 《Applied Surface Science》2007,253(8):3828-3833
Transparent indium-tin-oxide (ITO) anode surface was modified using O3 plasma and organic ultra-thin buffer layers were deposited on the ITO surface using 13.56 MHz rf plasma polymerization technique. A plasma polymerized methyl methacrylate (ppMMA) ultra-thin buffer layer was deposited between the ITO anode and hole transporting layer (HTL). The plasma polymerization of the buffer layer was carried out at a homemade capacitively coupled plasma (CCP) equipment. N,N′-Diphenyl-N,N′-bis(3-methylphenyl)-1,1′-diphenyl-4,4′-diamine (TPD) as HTL, Tris(8-hydroxy-quinolinato)aluminum (Alq3) as both emitting layer (EML)/electron transporting layer (ETL), and aluminum layer as cathode were deposited using thermal evaporation technique. Electroluminescence (EL) efficiency, operating voltage and stability of the organic light-emitting devices (OLEDs) were investigated in order to study the effect of the plasma surface treatment of the ITO anode and role of plasma polymerized methyl methacrylate as an organic ultra-thin buffer layer. 相似文献
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Meiso YOKOYAMA 《发光学报》2011,32(1):1-6
This work presents novel field emission organic light emitting diodes(FEOLEDs) with dynode,in which an organic EL light-emitting layer is used instead of an inorganic phosphor thin film in the field emission display(FED).The proposed FEOLEDs introduce field emission electrons into organic light emitting diodes(OLEDs),which exhibit a higher luminous efficiency than conventional OLED.The field emission electrons emitted from the carbon nanotubes(CNTs) cathode and to be amplified by impact the dynode in vacuum.These field emission electrons are injected into the multi-layer organic materials of OLED to increase the electron density.Additionally,the proposed FEOLED increase the luminance of OLED from 10 820 cd/m2 to 24 782 cd/m2 by raising the current density of OLED from an external electron source.The role of FEOLED is to add the quantity of electrons-holes pairs in OLED,which increase the exciton and further increase the luminous efficiency of OLED.Under the same operating current density,the FEOLED exhibits a higher luminous efficiency than that of OLED. 相似文献