用于红外焦平面的正方形孔径球面微透镜阵列研究

针对目前红外焦平面光敏阵列中存在的占空比小、光能利用率低的实际问题,展开了正方形孔径球面微透镜阵列制作及其与红外焦平面阵列集成应用的研究.本文从红外焦平面光敏阵列特点入手,对比分析了正方形孔径相比于传统圆形孔径微透镜阵列在光能利用上的优势.提出正方形孔径微透镜阵列激光直写变剂量曝光制作技术,建立光刻胶曝光数学模型和正方形球面微透镜面型函数,以此为基础,编制直写设备变剂量曝光控制软件;利用长春理工大的学复合坐标激光直写系统和等离子刻蚀机进行相关工艺实验,制作了阵列256×256、单元尺寸40×40μm2、球面半径60μm、单元间距1μm的红外石英微透镜阵列;并将其与相应阵列的碲-镉-汞红外光敏阵列进行集成.结果表明:微透镜的占空比达到95%,红外焦平面光能利用率从原来的60%提高到90%以上.由此得出结论:变剂量曝光制作微透镜技术是可行的,正方形孔径球面微透镜阵列代替圆形孔径微透镜阵列,对于提高红外探测器的灵敏度、信噪比、分辨率等性能具备明显优势.     

微透镜阵列的制备与应用研究进展

微透镜阵列是一种多功能的微光学元件,可以对入射光进行扩散、光束整形、光线均分、光学聚焦等调制,进而实现大视角、低像差、小畸变、高时间分辨率和无限景深等,在光电器件和光学系统的微型化、智能化和集成化方面具有重要的应用潜力.介绍了微透镜阵列的光学原理和发展历程,综述了喷墨打印、激光直写、丝网印刷、光刻技术、光聚合技术、热熔回流技术和化学气相沉积法等微透镜阵列制备技术,总结了微透镜阵列在成像传感、照明光源、显示和光伏等领域的应用进展,最后对微透镜阵列的发展方向进行了展望,讨论了曲面微透镜、叠加复眼系统以及微透镜与新型光电材料结合等新方向的发展趋势和未来挑战.     

激光直接光刻制作微透镜列阵的方法研究

介绍了利用激光直接光刻制作８相位台阶菲涅尔衍射微透镜列阵的工艺方法，并对元件的衍射效率及光刻过程中的制作误差进行了分析，透镜列阵在小形Ｓｈａｃｋ－Ｈａｒｔｍａｎｎ波前传感器中得到了应用。     

用于红外焦平面的正方形孔径球面微透镜阵列研究

针对目前红外焦平面光敏阵列中存在的占空比小、光能利用率低的实际问题,展开了正方形孔径球面微透镜阵列制作及其与红外焦平面阵列集成应用的研究.本文从红外焦平面光敏阵列特点入手,对比分析了正方形孔径相比于传统圆形孔径微透镜阵列在光能利用上的优势.提出正方形孔径微透镜阵列激光直写变剂量曝光制作技术,建立光刻胶曝光数学模型和正方形球面微透镜面型函数,以此为基础,编制直写设备变剂量曝光控制软件;利用长春理工大的学复合坐标激光直写系统和等离子刻蚀机进行相关工艺实验,制作了阵列256×256、单元尺寸40×40 μm²、球面半径60 μm、单元间距1 μm的红外石英微透镜阵列;并将其与相应阵列的碲-镉-汞红外光敏阵列进行集成.结果表明:微透镜的占空比达到95%,红外焦平面光能利用率从原来的60%提高到90% 以上.由此得出结论:变剂量曝光制作微透镜技术是可行的,正方形孔径球面微透镜阵列代替圆形孔径微透镜阵列,对于提高红外探测器的灵敏度、信噪比、分辨率等性能具备明显优势.     

一种球面透镜波前畸变的绝对检测方法

球面透镜的透射波前畸变是影响激光驱动器光束质量的重要参数。采用移相干涉仪检测球面透镜波前畸变时,测量结果的精度受限于标准球面镜头和后置平面反射镜的精度。然而,现有的绝对检测技术仅适用于反射元件。为了满足球面透镜波前畸变的高精度检测需求,提出了一种适用于球面透镜透射波前的绝对检测方法:三位置 平移相减法。详细介绍了三位置 平移相减法的原理,对其进行了模拟仿真和实验验证。仿真结果显示:三位置 平移相减法的仿真误差为10 nm~13 nm,达到高精度测量的理论要求;实验结果表明:三位置 平移相减法可以有效地减小前标准球面镜头和后置平面反射镜对测量结果的影响,该方法对球面透镜的加工和装调具有很好的指导意义。     

透镜焦距及球面曲率的测量

概述目前透镜焦距及球面曲率半径的测量方法，介绍透镜焦距及球面曲率半径的准直光束补偿测量法的原理，指出该方法的关键是对补偿光束准直性的检测，提出一种用准直光束补偿和横向错位进行干涉测量透镜焦距及球面曲率的新方法。     

飞秒激光和酸刻蚀方法制作凹面微透镜阵列

基于飞秒激光光刻技术和氢氟酸对光学玻璃的刻蚀,在K9光学玻璃表面制作了凹面微透镜阵列,并且可以以此为模板实现凸微透镜阵列的大量复制.用相位对比显微镜和扫描电子显微镜分析了微透镜阵列的表面轮廓,测试了微透镜阵列的光学衍射特征.该方法简单、透镜参量可控,制作的微透镜阵列能够用于分光、光束匀化、并行光刻等强激光领域.     

微模塑法制备PMMA球面微透镜阵列

借助微透镜及其阵列的光学器件,采用软刻蚀技术中的微模型方法成功制备了聚甲基丙烯酸甲酯(PMMA)的柱体及球面微透镜阵列,并对该微透镜阵列进行了光学显微和SEM分析．通过考察制备过程中的影响因素,探讨了减少阵列缺陷和提高光学性能的适宜参数．并对该透镜阵列的光学成像性能进行了初步研究．     

用飞秒激光脉冲在PMMA内页面式写入三维光存储的研究

用微透镜阵列聚焦放大的钛宝石飞秒激光脉冲到PMMA内部，在每个微透镜的焦点处造成光学损伤，通过改变焦点的位置，实现了三维数据的写入，用800 μJ 1 kHz重复率的飞秒激光记录速度达到20Mbit/s.阐述了数据信息的调制、写入和读出，分析了微透镜阵列参数对存储密度、数据记录速度和能量阈值的影响，建议了提高存储密度的两种有效途径. 关键词： 三维光存储 微透镜阵列 飞秒激光 PMMA     

飞秒激光和酸刻蚀方法制作凹面微透镜阵列

基于飞秒激光光刻技术和氢氟酸对光学玻璃的刻蚀,在K9光学玻璃表面制作了凹面微透镜阵列,并且可以以此为模板实现凸微透镜阵列的大量复制.用相位对比显微镜和扫描电子显微镜分析了微透镜阵列的表面轮廓,测试了微透镜阵列的光学衍射特征.该方法简单、透镜参量可控,制作的微透镜阵列能够用于分光、光束匀化、并行光刻等强激光领域.     

Heat and mass-transfer modeling of an angled gas-jet LCVD system

Laser chemical vapor deposition (LCVD) is a new manufacturing process that holds great potential for the production of small and complex metallic, ceramic and composite parts. Since LCVD is a thermally activated process, the most important process variable is temperature. Therefore, a thermal model was developed for a gas-jet LCVD system, accounting for Gaussian-beam laser heating and gas-jet convection cooling. The forced convection cooling imposed by the gas-jet reagent delivery system was significant, accounting for a 15 to 20% change in the substrate temperature. The deposition rate for a given material is not only affected by temperature, but also by the mass transport of reagent gases. An angled gas-jet reagent supply was designed to aid mass transport, but the need and impact of such a system has been debated. Therefore, a two-dimensional mass-transport model was developed to estimate the effects of a gas jet with respect to local reagent concentration variations and reaction rates. Across all deposition regimes, the gas jet was found to be an effective tool for increasing the concentration of reagent gases at the surface of the substrate. The gas jet also generated higher deposition rates and increased deposit resolution for those processes severely limited by diffusion. PACS 05.60.-k; 44.27+g; 44.05+e     

Temperature effects in the photolytic LCVD of platinum

The photolytic laser chemical vapor deposition (LCVD) rate of platinum from its bishexafluoroacetylacetonate precurser has been measured in situ and in real time. Optical transmission of the 350 nm photolysis light through the deposited platinum film and a transparent glass substrate is monitored and analysed in detail. From these measurements, as well as measurements of the reflected light, the fraction of the laser beam power absorbed in the metal film is found. The latter allows a simple estimate of the laser-induced temperature rise at the metal surface. It is shown that even rather small temperature increases of the order of several tens of degrees centigrade can completely change the photolysis mechanism and hence drastically influence the photolytic LCVD rate. A simple modification of Lax's model, in which a temperature dependent thermal conductivity of the substrate is introduced, is used to describe the laser-induced heating of a strongly absorbing thin metal film on a glass substrate.     

Photoetching of spherical microlenses on glasses using a femtosecond laser

We fabricated spherical microlenses on optical glasses by femtosecond laser direct writing (FLDW) in ambient air. To achieve good appearances of the microlenses, a meridian-arcs scanning method was used after a selective multilayer removal process with spiral scanning paths. A positive spherical microlens with diameter of 48 μm and height of 13.2 μm was fabricated on the surface of the glass substrate. The optical performances of the microlens were also tested. Compared to the conventional laser direct writing (LDW) technique, this work could provide an effective method for precise shape-controlled fabrication of three-dimensional (3D) microstructures with curved surfaces on difficult-to-cut materials for practical applications.     

Silicon fibers produced by high-pressure LCVD

Using a unique fiber-growth control mechanism and high-reaction pressures (>1 bar), silicon fibers were grown by laser-assisted chemical vapor deposition (LCVD) from silane near the focal point of a cw Nd:YAG laser beam. Fiber-growth rates ranged from <1 to 500 m/s and fiber tip temperatures from 525 to 1412° C. At low fibertip temperatures (<600° C) silicon fibers yielding glassy fracture were obtained. Some crystallinity was observed by X-ray diffraction. Polycrystalline silicon fibers were formed at intermediate temperatures, single-crystal silicon fibers at high-laser intensities and high-tip temperatures. The single crystal LCVD silicon fibers were formed by a vapor-liquid-solid (VLS) mechanism. Single-crystal VLS-LCVD silicon fibers were also obtained from liquid silicon-metal alloys by initiating fiber growth from the end of thin palladium, gold and platinum wires.     

Direct writing of carbon nanotube patterns by laser-induced chemical vapor deposition on a transparent substrate

Dot array and line patterns of multi-walled carbon nanotubes (MWCNTs) were successfully grown by laser-induced chemical vapor deposition (LCVD) on a transparent substrate at room temperature. In the proposed technique, a Nd:YVO₄ laser with a wavelength of 532 nm irradiates the backside of multiple catalyst layers (Ni/Al/Cr) through a transparent substrate to induce a local temperature rise, thereby allowing the direct writing of dense dot and line patterns of MWCNTs below 10 μm in size to be produced with uniform density on the controlled positions. In this LCVD method, a multiple-catalyst-layer with a Cr thermal layer is the central component for enabling the growth of dense MWCNTs with good spatial resolution.     

Laser grown single crystals of silicon

Single crystal rods of silicon have been grown by laser-induced chemical vapor deposition (LCVD) using visible light. We believe these to be the first reported single crystals of any material grown by LCVD.     

Temperature effect on photolytic deposition of platinum ohmic contacts and schottky diodes

An argon laser is used to induce Laser Chemical Vapor Deposition (LCVD) of platinum using platinum bihexafluoroacetyl-acetonate as precursor. The process can be photolytic or pyrolytic depending on the laser power used. These processes are studied by recording the laser light transmitted through of deposit and substrate. Photolytic deposition takes place either in the adsorbed phase or in the gaseous phase depending on the temperature induced by radiation absorption. The induced-temperature calculation using a model developed by us confirms the experimental results obtained. The influence of the substrate base temperature and the precursor product vapour pressure confirms photolytic deposition from the adsorbed phase for low powers and from the vapour phase onwards for high powers. The deposits obtained present a typical 96% Pt composition and its use in Schottky diode manufacture permit obtaining devices with good characteristics in spite of experimental limitations.     

Study of the gas-phase parameters affecting the silicon-oxide film deposition induced by an ArF laser

A study of the gas-phase parameters involved in ArF laser induced chemical vapour deposition of silicon-oxide thin films is presented. A complete set of experiments has been performed showing the influence of the concentration of the precursor gases, N₂O and SiH₄, and their influence on total and partial pressures on film growth and properties. In this paper we demonstrate the ability of this LCVD method to deposit silicon oxide films of different compositions and densities by appropriate control of gas composition and total pressure. Moreover, a material specific calibration plot comprising data obtained using different preparation techniques is presented, allowing determination of the stoichiometry of SiO _x films by using FTIR spectroscopy independently of the deposition method. For the range of processing conditions examined, the experimental results suggest that chemical processes governing deposition take place mainly in the gas phase.     

Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.     

Model of laser-induced chemical etching of silicon in chlorine atmosphere

A mathematical model for the chemical etching of silicon in a chlorine atmosphere induced by laser irradiation is described. The model takes into account: dissociation of molecules having absorbed radiant energy into chlorine atoms and their diffusion onto the substrate surface, generation of photocarriers in the silicon substrate, kinetics of chlorine atom chemisorption on the silicon surface, chemical reaction of chemisorbed chlorine atoms with silicon atoms, and desorption of reaction products. The obtained results are compared with experimental data.