Landau-level degeneracy and quantum Hall effect in a graphite bilayer

We derive an effective two-dimensional Hamiltonian to describe the low-energy electronic excitations of a graphite bilayer, which correspond to chiral quasiparticles with a parabolic dispersion exhibiting Berry phase 2pi. Its high-magnetic-field Landau-level spectrum consists of almost equidistant groups of fourfold degenerate states at finite energy and eight zero-energy states. This can be translated into the Hall conductivity dependence on carrier density, sigma(xy)(N), which exhibits plateaus at integer values of 4e2/h and has a double 8e2/h step between the hole and electron gases across zero density, in contrast to (4n + 2)e2/h sequencing in a monolayer.     

Particle-hole symmetry and the Pfaffian state

We show that the particle-hole conjugate of the Pfaffian state-or "anti-Pfaffian" state-is in a different universality class from the Pfaffian state, with different topological order. The two states can be distinguished easily by their edge physics: their edges differ in both their thermal Hall conductance and their tunneling exponents. At the same time, the two states are exactly degenerate in energy for a nu=5/2 quantum Hall system in the idealized limit of zero Landau level mixing. Thus, both are good candidates for the observed sigma_{xy}=5/2(e;{2}/h) quantum Hall plateau.     

Quantum Hall effect in kagomé lattices under staggered magnetic field

The interplay of staggered magnetic field (SMF) and uniform magnetic field (UMF) on the quantum Hall effect (QHE) in kagomé lattices is investigated in the weak UMF limit. The topological band gaps coming from SMF are robust against UMF although the extended bands split into a series of Landau levels. With SMF applied, in the unconventional QHE region, one plateau of Hall conductance becomes wider and the others are compressed. Meanwhile, one of the two series of integer Hall plateaus splits and the resulting two series of Hall plateaus still exhibit the integer behavior. The Hall conductance varies with SMF step by step with the step height being e(2)/h or 2e(2)/h according to the QHE being conventional or unconventional. In the transitional regions, redistribution of Chern numbers happens even in the weak UMF limit.     

Fractional topological insulators in three dimensions

Topological insulators can be generally defined by a topological field theory with an axion angle θ of 0 or π. In this work, we introduce the concept of fractional topological insulator defined by a fractional axion angle and show that it can be consistent with time reversal T invariance if ground state degeneracies are present. The fractional axion angle can be measured experimentally by the quantized fractional bulk magnetoelectric polarization P?, and a "halved" fractional quantum Hall effect on the surface with Hall conductance of the form σH=p/q e2/2h with p, q odd. In the simplest of these states the electron behaves as a bound state of three fractionally charged "quarks" coupled to a deconfined non-Abelian SU(3) "color" gauge field, where the fractional charge of the quarks changes the quantization condition of P? and allows fractional values consistent with T invariance.     

Observation of quantized Hall drag in a strongly correlated bilayer electron system

The frictional drag between parallel two-dimensional electron systems has been measured in a regime of strong interlayer correlations. When the bilayer system enters the excitonic quantized Hall state at total Landau level filling factor nu(T) = 1, the longitudinal component of the drag vanishes but a strong Hall component develops. The Hall drag resistance is observed to be accurately quantized at h/e(2).     

Gate-defined graphene quantum point contact in the quantum Hall regime

We investigate transport in a gate-defined graphene quantum point contact in the quantum Hall regime. Edge states confined to the interface of p and n regions in the graphene sheet are controllably brought together from opposite sides of the sample and allowed to mix in this split-gate geometry. Among the expected quantum Hall features, an unexpected additional plateau at 0.5h/e2 is observed. We propose that chaotic mixing of edge channels gives rise to the extra plateau.     

Quantized anomalous Hall effect in two-dimensional ferromagnets: quantum Hall effect in metals

We study the effect of disorder on the anomalous Hall effect (AHE) in two-dimensional ferromagnets. The topological nature of the AHE leads to the integer quantum Hall effect from a metal, i.e., the quantization of sigma(xy) induced by the localization except for the few extended states carrying Chern numbers. Extensive numerical study on a model reveals that Pruisken's two-parameter scaling theory holds even when the system has no gap with the overlapping multibands and without the uniform magnetic field. Therefore, the condition for the quantized AHE is given only by the Hall conductivity sigma(xy) without the quantum correction, i.e., /sigma(xy)/>e(2)/(2h).     

Metal-insulator oscillations in a two-dimensional electron-hole system

The electrical transport properties of a bipolar InAs/GaSb system have been studied in a magnetic field. The resistivity oscillates between insulating and metallic behavior while the quantum Hall effect shows a digital character oscillating from 0 to 1 conductance quantum e(2)/h. The insulating behavior is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.     

From magnetically doped topological insulator to the quantum anomalous Hall effect

Quantum Hall effect （QHE）, as a class of quantum phenomena that occur in macroscopic scale, is one of the most important topics in condensed matter physics. It has long been expected that QHE may occur without Landau levels so that neither external magnetic field nor high sample mobility is required for its study and application, Such a QHE free of Landau levels, can appear in topological insulators （TIs） with ferromagnetism as the quantized version of the anomalous Hall effect, i.e., quantum anomalous Hall （QAH） effect. Here we review our recent work on experimental realization of the QAH effect in magnetically doped TIs. With molecular beam epitaxy, we prepare thin films of Cr-doped （Bi,Sb）2Te3 TIs with well- controlled chemical potential and long-range ferromagnetic order that can survive the insulating phase. In such thin films, we eventually observed the quantization of the Hall resistance at h/e2 at zero field, accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect provides a foundation for many other novel quantum phenomena predicted in TIs, and opens a route to practical applications of quantum Hall physics in low-power-consumption electronics.     

Transverse asymmetry AT' from the quasielastic 3He(e,e') process and the neutron magnetic form factor

We have measured the transverse asymmetry A(T') in 3He(e,e(')) quasielastic scattering in Hall A at Jefferson Laboratory with high precision for Q2 values from 0.1 to 0.6 (GeV/c)(2). The neutron magnetic form factor G(n)(M) was extracted based on Faddeev calculations for Q2 = 0.1 and 0.2 (GeV/c)(2) with an experimental uncertainty of less than 2%.     

Unconventional integer quantum Hall effect in graphene

Monolayer graphite films, or graphene, have quasiparticle excitations that can be described by (2+1)-dimensional Dirac theory. We demonstrate that this produces an unconventional form of the quantized Hall conductivity sigma(xy) = -(2e2/h)(2n+1) with n = 0, 1, ..., which notably distinguishes graphene from other materials where the integer quantum Hall effect was observed. This unconventional quantization is caused by the quantum anomaly of the n=0 Landau level and was discovered in recent experiments on ultrathin graphite films.     

Observation of a quantized hall resistivity in the presence of mesoscopic fluctuations

We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations. Focusing on the lowest Landau level, we find that, while the diagonal resistivity displays strong fluctuations, the Hall resistivity is free of fluctuations and remains quantized at its nu=1 value, h/e(2). This is true also in the insulating phase that terminates the quantum Hall series. These results extend the validity of the semicircle law of conductivity in the quantum Hall effect to the mesoscopic regime.     

A gauge theory for two-band model of Chern insulators and induced topological defects

In this paper a gauge theory is proposed for the two-band model of Chern insulators.Based on the so-calle't Hooft monopole model,a U(1)Maxwell electromagnetic sub-field is constructed from an SU(2)gauge field,from which arise two types of topological defects,monopoles and e2 merons.We focus on the topological number in the Hall conductance σ_xy=e²/hC,where C is the Chern number.It is discovered that in the monopole case C is indeterminate,while in the meron case C takes different values,due to a varying on-site energy m.As a typical example,we apply this method to the square lattice and compute the winding numbers(topological charges)of the defects;the C-evaluations we obtain reproduce the results of the usual literature.Furthermore,based on the gauge theory we propose a new model to obtain the high Chern numbers|C|=2,4.     

Quantum Anomalous Hall Multilayers Grown by Molecular Beam Epitaxy

Quantum anomalous Hall(QAH) effect is a quantum Hall effect that occurs without the need of external magnetic field. A system composed of multiple parallel QAH layers is an effective high Chern number QAH insulator and the key to the applications of the dissipationless chiral edge channels in low energy consumption electronics. Such a QAH multilayer can also be engineered into other exotic topological phases such as a magnetic Weyl semimetal with only one pair of Weyl points. This work reports the first experimental realization of QAH multilayers in the superlattices composed of magnetically doped(Bi,Sb)_2Te_3 topological insulator and Cd Se normal insulator layers grown by molecular beam epitaxy. The obtained multilayer samples show quantized Hall resistance h/N_e~2, where h is Planck's constant, e is the elementary charge and N is the number of the magnetic topological insulator layers, resembling a high Chern number QAH insulator. The QAH multilayers provide an excellent platform to study various topological states of matter.     

e/3 Laughlin quasiparticle primary-filling nu=1/3 interferometer

We report experimental realization of a quasiparticle interferometer where the entire system is in 1/3 primary fractional quantum Hall state. The interferometer consists of chiral edge channels coupled by quantum-coherent tunneling in two constrictions, thus enclosing an Aharonov-Bohm area. We observe magnetic flux and charge periods h/e and e/3, equivalent to the creation of one quasielectron in the island. Quantum theory predicts a 3h/e flux period for charge e/3, integer statistics particles. Thus, the observed periods demonstrate the anyonic braiding statistics of Laughlin quasiparticles.     

The quantum Hall＇s effect： A quantum electrodynamic phenomenon

<正>We have applied Maxwell’s equations to study the physics of quantum Hall’s effect.The electromagnetic properties of this system are obtained.The Hall’s voltage,V_H = 2πh²n_s/em,where n_s is the electron number density,for a 2- dimensional system,and h = 2πh is the Planck’s constant,is found to coincide with the voltage drop across the quantum capacitor.Consideration of the cyclotronic motion of electrons is found to give rise to Hall’s resistance. Ohmic resistances in the horizontal and vertical directions have been found to exist before equilibrium state is reached. At a fundamental level,the Hall’s effect is found to be equivalent to a resonant LCR circuit with L_H = 2πm/e²n_s and C_H = me²/2πh²n_s satisfying the resonance condition with resonant frequency equal to the inverse of the scattering （relaxation） time,τ_s.The Hall’s resistance is found to be R_H =（（L_H）/C_H）^1/2.The Hall’s resistance may be connected with the impedance that the electron wave experiences when it propagates in the 2-dimensional gas.     

Quantum spin Hall effect

The quantum Hall liquid is a novel state of matter with profound emergent properties such as fractional charge and statistics. The existence of the quantum Hall effect requires breaking of the time reversal symmetry caused by an external magnetic field. In this work, we predict a quantized spin Hall effect in the absence of any magnetic field, where the intrinsic spin Hall conductance is quantized in units of 2(e/4pi). The degenerate quantum Landau levels are created by the spin-orbit coupling in conventional semiconductors in the presence of a strain gradient. This new state of matter has many profound correlated properties described by a topological field theory.     

NMR probing of spin excitations in the ring structure of a two-subband system

Resistively detected nuclear magnetic resonance (NMR) is observed inside the ringlike structure, with a quantized Hall conductance of 6e(2)/h, in the phase diagram of a two-subband electron system. The NMR signal persists up to 470 mK and is absent in other states with the same quantized Hall conductance. The nuclear spin-lattice relaxation time T1, is found to decrease rapidly towards the ring center. A strong dynamic nuclear polarization by the biasing current has also been observed only inside the ring. These observations are consistent with the assertion of the ringlike region being a ferromagnetic state that is accompanied by collective spin excitations.