Mesoscopic spin Hall effect

We investigate the spin Hall effect in ballistic chaotic quantum dots with spin-orbit coupling. We show that a longitudinal charge current can generate a pure transverse spin current. While this transverse spin current is generically nonzero for a fixed sample, we show that when the spin-orbit coupling time is short compared to the mean dwell time inside the dot, it fluctuates universally from sample to sample or upon variation of the chemical potential with a vanishing average.     

Observation of intrinsic inverse spin Hall effect

We report observation of intrinsic inverse spin Hall effect in undoped GaAs multiple quantum wells with a sample temperature of 10 K. A transient ballistic pure spin current is injected by a pair of laser pulses through quantum interference. By time resolving the dynamics of the pure spin current, the momentum relaxation time is deduced, which sets the lower limit of the scattering time between electrons and holes. The transverse charge current generated by the pure spin current via the inverse spin Hall effect is simultaneously resolved. We find that the charge current is generated well before the first electron-hole scattering event. Generation of the transverse current in the scattering-free ballistic transport regime provides unambiguous evidence for the intrinsic inverse spin Hall effect.     

Controllable Spin Polarization of Charge Current by Rashba Spin Orbital Coupling

We report a theoretic study on modulating the spin polarization of charge current in a mesoscopic four-terminal device of cross structure by using the inverse spin hall effect. The scattering region of device is a two-dimensional electron gas (2DEG) with Rashba spin orbital interaction (RSOI), one of lead is ferromagnetic metal and other three leads are spin-degenerate normal metals. By using Landauer-Büttiker formalism, we found that when alongitudinal charge current flows through 2DEG scattering region from FM lead by external bias, the transverse current can be either a pure spin current or full-polarized charge current due to the combined effect of spin hall effect and its inverse process, and the polarization of this transverse current can be easily controlled by several device parameters such as the Fermi energy, ferromagnetic magnetization, and the RSOI constant. Our method may pave a new way to control the spin polarization of a charge current.     

Magnetization dynamics due to pure spin currents in magnetic double layers

The magnetization dynamics in magnetic double layers is affected by spin-pump and spin-sink effects. So far, only the spin pumping and its effect on the magnetic damping has been studied. However, due to conservation of angular momentum this spin current also leads to magnetic excitation of the layer dissipating this angular momentum. In this Letter we use time resolved magneto-optic Kerr effect to directly show the excitation due to the pure spin current. In particular, we observe magnetization dynamics due to transfer of angular momentum in magnetic double layers. In contrast to other experiments where a spin polarized charge current is passed through a nanomagnet, the effects discussed in this Letter are based on pure spin currents without net transfer of electric charge.     

Excitation of the spin density and current by coherent light pulses in quantum wells

We study the orbital and spin dynamics of charge carriers induced by non-overlapping linearly polarized light pulses in semiconductor quantum wells. It is shown that such an optical excitation with coherent pulses leads to a spin orientation of photocarriers and an electric current. The effects are caused by the interference of optical transitions driven by individual pulses. The distribution of carriers in the spin and momentum spaces depends on the crystallographic orientation of quantum wells and can be efficiently controlled by the pulse polarizations, time delay and phase shift between the pulses, as well as an external magnetic field.     

Electrical generation of pure spin current with oscillating spin-orbit interaction

We propose an electrical scheme for the generation of a pure spin current without a charge current in a two-terminal device, which consists of a scattering region of a two-dimensional electron gas (2DEG) with Rashba (R) and/or Dresselhaus (S) spin-orbit interaction (SOI) and two normal leads. The SOI is modulated by a time-dependent gate voltage to pump a spin current. Based on a tight-binding model and the Keldysh Green’s function technique, we obtain the analytical expression of the spin current. It is shown that a pure spin current can be pumped out, and its magnitude could be modulated by device parameters such as the oscillating frequency of the SOI, as well as the SOI strength. Moreover, the spin polarisation direction of the spin current could also be tuned by the strength ratio between RSOI and DSOI. Our proposal provides not only a fully electrical means to generate a pure spin current but also a way to control the spin polarisation direction of the generated spin current.     

Transverse spin relaxation in liquid 129Xe in the presence of large dipolar fields

Using spin-echo NMR techniques we study the transverse spin relaxation of hyperpolarized liquid 129Xe in a spherical cell. We observe an instability of the transverse magnetization due to dipolar fields produced by liquid 129Xe, and find that imperfections in the pi pulses of the spin-echo sequence suppress this instability. A simple perturbative model of this effect is in good agreement with the data. We obtain a transverse spin relaxation time of 1300 sec in liquid 129Xe, and discuss applications of hyperpolarized liquid 129Xe as a sensitive magnetic gradiometer and for a permanent electric dipole moment search.     

Thermal currents obtained and mutually switched by a modified Haldane model in graphene

By using the transfer matrix method, we discover three types of current, such as the 100% spin-valley polarized current, pure spin-valley current and pure charge current, in a two-terminal graphene system. These types of current can be obtained and mutually switched by modulating the parameters of the modified Haldane model (MHM). In our work, these types of current are driven by the thermal bias. Compared with this method of increasing the one-lead temperature (with a fixed temperature difference), the thermal currents can be more effectively strengthened by increasing the temperature difference (with a fixed one-lead temperature). In order to rapidly turn off these currents, we choose to enhance the intensity of the off-resonant circularly polarized light instead of canceling the temperature difference. These results indicate that the graphene system with the MHM has promising applications in the spin and valley caloritronics.     

Thermally driven spin transport through a transverse-biased zigzag-edge graphene nanoribbon

In the framework of the Landauer-Büttiker formalism, we investigate coherent spin transport through a transverse-biased magnetic zigzag-edge graphene nanoribbon, with a temperature difference applied between the source and the drain. It is shown that a critical source temperature is needed to generate a spin-polarized current due to the presence of a forbidden transport gap. The magnitude of the obtained spin polarization exceeds 90% in a wide range of source temperatures, and its polarization direction could be changed by reversing the transverse electric field. We also find that, at fixed temperature difference, the spin-polarized current undergoes a transition from increasing to decreasing as the source temperature rises, which is attributed to the competition between the excited energy of electrons and the relative temperature difference. Moreover, by modulating the transverse electric field, the source temperature and the width of the ribbon, we can control the device to work well for generating a highly spin-polarized current.     

Rashba-induced transverse pure spin currents in a four-terminal quantum dot ring

By applying a local Rashba spin–orbit interaction to an individual quantum dot of a four-terminal four-quantum-dot ring and introducing a finite bias between the longitudinal terminals, we theoretically investigate the charge and spin currents in the transverse terminals. It is found that when the quantum dot levels are separate from the chemical potentials of the transverse terminals, notable pure spin currents appear in the transverse terminals with the same amplitude but opposite polarization directions. In addition, the polarization directions of such pure spin currents can be inverted by altering the structure parameters, i.e., the magnetic flux, the bias voltage, and the values of quantum dot levels with respect to the chemical potentials of the transverse terminals.     

Shot noises of spin and charge currents in a ferromagnet-quantum-dot-ferromagnet system

We have investigated the shot noises of charge and spin current by considering the spin polarized electron tunneling through a ferromagnet-quantum-dot-ferromagnet system. We have derived the spin polarized current noise matrix, from which we can derive general expressions of shot noises associated with charge and spin currents. The spin and charge currents are intimately related to the polarization angles, and they behave quite differently from each other. The shot noise of charge current is symmetric about the gate voltage whose structure is modified by the Zeeman field considerably. There exists oscillations in spin current shot noise in the absence of source-drain bias at zero temperature, and it is asymmetric in the positive and negative regimes of sourcedrain voltage. The shot noise of spin current behaves quite differently from the shot noise of charge current, since the spin current components I_x^s, I_y^s oscillate sinusoidally with the frequency ?_? in the ?th lead, while the I_z^s component of spin current is independent of time.     

Ultrafast extrinsic spin-Hall currents

We consider the possibility of ultrafast extrinsic spin-Hall currents, generated by skew scattering following the optical injection of charge or pure spin currents. We propose a phenomenological model for this effect in quantum well structures. An injected charge current leads to a spin-Hall-induced pure spin current, and an injected pure spin current leads to a spin-Hall-induced charge current. The resulting spin or charge accumulation can be measured optically.     

Detecting Spin Bias with Circularly Polarized Light

We theoretically study the spin transport through a two-terminal quantum dot device under the influence of a symmetric spin bias and circularly polarized light.It is found that the combination of the circularly polarized light and the applied spin bias can result in a net charge current.The resultant charge current is large enough to be measured when properly choosing the system parameters.The resultant charge current can be used to deduce the spin bias due to the fact that there exists a simple linear relation between them.When the external circuit is open,a charge bias instead of a charge current can be induced,which is also measurable by present technologies.These findings indicate a new approach to detect the spin bias by using circularly polarized light.     

Spin Hall current driven by quantum interferences in mesoscopic Rashba rings

We propose an all-electrical nanostructure where pure spin current is induced in the transverse voltage probes attached to a quantum-coherent ballistic one-dimensional ring when unpolarized charge current is injected through its longitudinal leads. Tuning of the Rashba spin-orbit coupling in a semiconductor heterostructure hosting the ring generates quasiperiodic oscillations of the predicted spin-Hall current due to spin-sensitive quantum-interference effects caused by the difference in the Aharonov-Casher phase accumulated by opposite spin states. Its amplitude is comparable to that of the spin-Hall current predicted for finite-size (simply connected) two-dimensional electron gases, while it gets reduced gradually in wide two-dimensional rings or due to spin-independent disorder.     

Spin-polarized current through a lateral double quantum dot with spin–orbit interaction

We study the spin-polarized current through a vertical double quantum dot scheme. Both the Rashba spin–orbit (RSO) interaction inside one of the quantum dots and the strong intradot Coulomb interactions on the two dots are taken into account by using the second-quantized form of the Hamiltonian. Due to the existence of the RSO interaction, spin-up and spin-down electrons couple to the external leads with different strengths, and then a spin polarized current can be driven out of the middle lead by controlling a set of structure parameters and the external bias voltage. Moreover, by properly adjusting the dot levels and the external bias voltages, a pure spin current with no accompanying charge current can be generated in the weak coupling regime. We show that the difference between the intradot Coulomb interactions strongly influences the spin-polarized currents flowing through the middle lead and is undesirable in the generation of the net spin current. Based on the RSO interaction, the structure we propose can efficiently polarize the electron spin without the usage of any magnetic field or ferromagnetic material. This device can be used as a spin-battery and is realizable using the present available technologies.     

Quantum dissipative Rashba spin ratchets

We predict the possibility to generate a finite stationary spin current by applying an unbiased ac driving to a quasi-one-dimensional asymmetric periodic structure with Rashba spin-orbit interaction and strong dissipation. We show that under a finite coupling strength between the orbital degrees of freedom the electron dynamics at low temperatures exhibits a pure spin ratchet behavior, i.e., a finite spin current and the absence of charge transport in spatially asymmetric structures. It is also found that the equilibrium spin currents are not destroyed by the presence of strong dissipation.     

Effects of geometry and linearly polarized cavity photons on charge and spin currents in a quantum ring with spin-orbit interactions

We calculate the persistent charge and spin polarization current inside a finite-width quantum ring of realistic geometry as a function of the strength of the Rashba or Dresselhaus spin-orbit interaction. The time evolution in the transient regime of the two-dimensional (2D) quantum ring connected to electrically biased semi-infinite leads is governed by a time-convolutionless non-Markovian generalized master equation. The electrons are correlated via Coulomb interaction. In addition, the ring is embedded in a photon cavity with a single mode of linearly polarized photon field, which is polarized either perpendicular or parallel to the charge transport direction. To analyze carefully the physical effects, we compare to the analytical results of the toy model of a one-dimensional (1D) ring of non-interacting electrons with spin-orbit coupling. We find a pronounced charge current dip associated with many-electron level crossings at the Aharonov-Casher phase ΔΦ = π, which can be disguised by linearly polarized light. Qualitative agreement is found for the spin polarization currents of the 1D and 2D ring. Quantitatively, however, the spin polarization currents are weaker in the more realistic 2D ring, especially for weak spin-orbit interaction, but can be considerably enhanced with the aid of a linearly polarized electromagnetic field. Specific spin polarization current symmetries relating the Dresselhaus spin-orbit interaction case to the Rashba one are found to hold for the 2D ring, which is embedded in the photon cavity.     

Proposal for direct measurement of a pure spin current by a polarized light beam

The photon helicity may be mapped to a spin-1/2, whereby we put forward an intrinsic interaction between a polarized light beam as a "photon spin current" and a pure spin current in a semiconductor, which arises from the spin-orbit coupling in valence bands as a pure relativity effect without involving the Rashba or the Dresselhaus effect due to inversion asymmetries. The interaction leads to linear and circular optical birefringence, which are similar to the Voigt effect and the Faraday rotation in magneto-optics but nevertheless involve no net magnetization. The birefringence effects provide a direct, nondemolition measurement of pure spin currents.     

Quantum interference control of ballistic pure spin currents in semiconductors

We demonstrate all-optical quantum interference injection and control of a ballistic pure spin current (without an accompanying charge current) in GaAs/AlGaAs quantum wells, consisting of spin-up electrons traveling in one direction and spin-down electrons traveling in the opposite direction. This current is generated through quantum interference of one- and two-photon absorption of approximately 100 fs phase-locked pulses that have orthogonal linear polarizations. We use a spatially resolved pump-probe technique to measure carrier movement of approximately 10 nm. Results agree with recent theoretical predictions.     

Effects of electric and magnetic fields on electronic states and transport of a Hall bar

We study the edge-state band and transport property for a HgTe/CdTe quantum well Hall bar under the combined coupling of a transverse electric field and a perpendicular magnetic field. It is demonstrated that a weak magnetic field can protect one of the two edge states, open or enlarge a gap of the other edge state in the Hall bar. However, an appropriate electric field can remove the gap, restoring the quantum spin Hall effect. Using the scattering matrix method, we study the electronic transport of the system. We find that the electric field can not only make the switch from pure spin-up to spin-down current, but also open or close the edge-state channels in a narrow Hall bar under a weak magnetic field, which provides us with a new way to construct a topological insulator-based spin switch and charge switch.