拉曼光谱表征石墨烯材料的研究进展

石墨烯独特的二元化电子价键结构使其在纳米电子器件中具有良好的应用发展前景。拉曼光谱作为一种灵敏、便捷的技术,已被成功地用作表征石墨烯的结构和特性。本综述着重对沉积在不同基底以及掺杂的石墨烯拉曼光谱研究做了一个简单的总结。通过对铟锡氧化物、蓝宝石和玻璃基底上的石墨烯拉曼光谱进行观察,发现在不同基底上的石墨烯拉曼G峰与2D峰峰值会有不同程度的偏移,但2D峰峰值可判断石墨烯层数这一结论仍适用。掺杂可改变石墨烯的荷电状态,使石墨烯表现出空穴（p）型或电子（n）型掺杂特性,通过石墨烯拉曼光谱的变化可以定性石墨烯的掺杂类别并定量表征石墨烯的载流子浓度。     

Origins of hole doping and relevant optoelectronic properties of wide gap p-type semiconductor, LaCuOSe

LaCuOSe is a wide band gap (～2.8 eV) semiconductor with unique optoelectronic properties, including room-temperature stable excitons, high hole mobility ～8 cm(2)/(Vs), and the capability of high-density hole doping (up to 1.7 × 10(21) cm(-3) using Mg). Moreover, its carrier transport and doping behaviors exhibit nonconventional results, e.g., the hole concentration increases with decreasing temperature and the high hole doping does not correlate with other properties such as optical absorption. Herein, secondary ion mass spectroscopy and photoemission spectroscopy reveal that aliovalent ion substitution of Mg at the La site is not the main source of hole doping and the Fermi level does not shift even in heavily doped LaCuOSe:Mg. As the hole concentration increases, the subgap optical absorption becomes more intense, but the increase in intensity does not correlate quantitatively. Transmission electron microscopy indicates that planar defects composed of Cu and Se deficiencies are easily created in LaCuOSe. These observations can be explained via the existence of a degenerate low-mobility layer and formation of complex Cu and Se vacancy defects with the assistance of generalized gradient approximation band calculations.     

Combined molecular and periodic DFT analysis of the adsorption of co macrocycles on graphene

The molecular doping of graphene with π‐stacked conjugated molecules has been widely studied during the last 10 years, both experimentally or using first‐principle calculations, mainly with strongly acceptor or donor molecules. Macrocyclic metal complexes have been far less studied and their behavior on graphene is less clear‐cut. The present density functional theory study of cobalt porphyrin and phthalocyanine adsorbed on monolayer or bilayer graphene allows to compare the outcomes of two models, either a finite‐sized flake of graphene or an infinite 2D material using periodic calculations. The electronic structures yielded by both models are compared, with a focus on the density of states around the Fermi level. Apart from the crucial choice of calculation conditions, this investigation also shows that unlike strongly donating or accepting organic dopants, these macrocycles do not induce a significant doping of the graphene sheet and that a finite size model of graphene flake may be confidently used for most modeling purposes. © 2017 Wiley Periodicals, Inc.     

Chemical Reactivity and Band‐Gap Opening of Graphene Doped with Gallium,Germanium, Arsenic,and Selenium Atoms

Herein, the effects of substitutional doping of graphene with Ga, Ge, As, and Se are shown. Ge exhibits the lowest formation energy, whereas Ga has the largest one. Ga‐ and As‐doped graphene display a reactivity that is larger than that corresponding to a double vacancy. They can decompose H₂ and O₂ easily. Variation of the type and concentration of dopant makes the adjustment of the interlayer interaction possible. In general, doping of monolayer graphene opens a band gap. At some concentrations, Ga doping induces a half metallic behavior. As is the element that offers the widest range of gap tuning. Heyd–Scuseria–Ernzerhof calculations indicate that it can be varied from 1.3 to 0.3 eV. For bilayer graphene, the doped sheet induces charge redistribution in the perfect underneath sheet, which opens a gap in the range of 0.05–0.4 eV. This value is useful for developing graphene‐based electronics, as the carrier mobility of the undoped sheet is not expected to alter.     

Screened exchange hybrid density-functional study of the work function of pristine and doped single-walled carbon nanotubes

We present a detailed study of the work function of pristine and doped single-walled carbon nanotubes (SWCNTs) using a novel screened exchange hybrid density functional. We find that SWCNTs with diameters larger than 0.9 nm tend asymptotically and smoothly to the graphene limit of 4.6 eV. On the other hand, the work function of narrow tubes exhibits a strong dependence on their diameter and chiral angle. Boron or nitrogen doping, with concentrations from 1% to 2%, not only changes the electronic behavior by introducing new states around the Fermi level, but also produces a significant change of the work function that can vary between 3.9 (N doping) and 5.2 eV (B doping).     

The effect of doping on the energetics and quantum conductance in graphene nanoribbons with a metallocene adsorbate

Based on a PBE-D2 calculation that empirically includes van der Waals interactions to the standard GGA approximation of Perdew, Berke, and Ernzerhof, we have investigated the adsorption of ferrocene or ruthenocene on pristine and X-doped graphene (GrS) or graphene nanoribbons (GNRs), where X (=B or N) is a p-type or n-type heteroatom. First, we find that van der Waals interactions play a dominant role in the adsorption. Second, we find that metallocene adsorption on doped GNRs introduces different effects in the low-bias conductance, not far from the linear response regime, of GNRs depending upon the doping type. Adsorption on undoped or p-type GNRs brings about a slight reduction in conductance due to an introduction of quasi-bound states just below the Fermi level. No appreciable reduction is expected in n-type GNRs because those states are introduced far below the Fermi level.     

Determination of Graphene Sheets Content in Carbon Materials by Raman Spectroscopy

Graphene layer is a monolayer of graphite. Graphene single layer has confirmed to have a higher electron and hole mobility than silicon and has high heat conduction and special optical properties. And un‐perfect graphene sheets exist in any carbon materials. In our previous result to determine the graphene sheets content in any carbon material can be determined by X‐ray spectrum combination with a peak decomposition method. In this study, we have prepared two serious carbon materials from wood wastes, with and without MnO₂ catalytic pyrolysis processes. Results show that all the G band intensity of all synthesized samples including a commercial graphene powder in Raman spectrum has a proportional relation with the graphene sheets content in these carbon materials.     

Electronic properties of a pure and sodium-doped C(70) single layer adsorbed on Al polycrystalline surface

Core level and valence band photoemission measurements combined with near edge x-ray absorption fine structure measurements were performed on a single C(70) layer adsorbed on polycrystalline Al (1 ML-C(70)/Al) (ML-monolayer), pure and doped with sodium atoms. The data obtained from the pure ML chemisorbed on Al surface show a semiconducting behavior of the system, which is characterized by a covalent bond between the adsorbate and the substrate. The same data show also that the C(70) molecules tend to orient themselves with the C(5v) axis perpendicular to the surface in analogy to what observed for 1 ML-C(70)/Cu(111). By doping the sample with sodium atoms a charge transfer from the alkali atoms to the lowest unoccupied molecular orbital (LUMO) of the C(70) molecules takes place, as underlined by the gradual increasing intensity of the C(70) LUMO peak as a function of doping. Nevertheless, no metallic phases are observed for any doping step.     

Resonance energy transfer from a dye molecule to graphene

We study the distance dependence of the rate of resonance energy transfer from the excited state of a dye to the pi system of graphene. Using the tight-binding model for the pi system and the Dirac cone approximation, we obtain the analytic expression for the rate of energy transfer from an electronically excited dye to graphene. While in traditional fluorescence resonance energy transfer, the rate has a (distance)(-6) dependence, we find that the distance dependence in this case is quite different. Our calculation of rate in the case of the two dyes, pyrene and nile blue, shows that the distance dependence is Yukawa type. We have also studied the effect of doping on energy transfer to graphene. Doping does not modify the rate for electronic excitation energy transfer significantly. However, in the case of vibrational transfer, the rate is found to be increased by an order of magnitude due to doping. This can be attributed to the nonzero density of states at the Fermi level that results from doping.     

Calibration of XPS - energy scale for determination of the oxidation states of doping elements in SnO 2 powders

X-ray photoelectron spectroscopy (XPS) has been used to investigate the oxidation states of doping elements in doped SnO(2) powders. Because of low conductivity, however, charging and resulting peak shift is observed. To obtain the real peak position a suitable reference peak must be found in the XPS spectrum. In this study both internal (Sn3d(5/2) peak) and external references (Au4f(7/2) and C1 s) were examined. When external references were used a shift of all the peaks studied was observed; the extent of this depended on the doping element and the doping concentration. By doping with an element of valence >4 (Nb and Sb) we obtained peaks at binding energy (BE); doping with a trivalent element (In) led to peaks at values of the BE. This peak shift is connected with changes of Fermi level. In contrast, by using Sn3d(5/2) as reference we obtained results which enabled, for example, observation of the dependence of changes of the oxidation state of Sb on doping concentration.     

Synthesis of Nitrogen-Doped Graphene via Thermal Annealing Graphene with Urea

Chemical doping is an effective method to intrinsically modify the chemical and electronic property of graphene. We propose a novel approach to synthesize the nitrogen-doped graphene via thermal annealing graphene with urea, in which the nitrogen source can be controllably released from the urea by varying the annealed temperature and time. The doped N content and the configuration N as well as the thermal stabilities are also evaluated with X-ray photoelectron spectroscopy and Raman spectra. Electrical measurements indi-cate that the conductivity of doped graphene can be well regulated with the N content. The method is expected to produce large scale and controllable N-doped graphene sheets for a variety of potential applications.     

Electronic properties of doped molecular thin films measured by Kelvin probe force microscopy

We report on high-resolution electronic measurements of doped organic thin-film transistors using Kelvin probe force microscopy. Measurements conducted on field effect transistors made of N,NI-diphenyl-N,NI-bis(1-naphthyl)-1,1I-biphenyl-4,4I-diamine p-doped with tetrafluoro-tetracyanoquinodimethane have allowed us to determine the rich structure of the doping-induced density of states. In addition, the doping process changes only slightly the Fermi energy position with respect to the highest occupied molecular orbital level center. The moderate change is explained by two counter-acting effects on the Fermi energy position: the doping-induced additional charge and the broadening of the density of states.     

Low temperature growth of highly nitrogen-doped single crystal graphene arrays by chemical vapor deposition

The ability to dope graphene is highly important for modulating electrical properties of graphene. However, the current route for the synthesis of N-doped graphene by chemical vapor deposition (CVD) method mainly involves high growth temperature using ammonia gas or solid reagent melamine as nitrogen sources, leading to graphene with low doping level, polycrystalline nature, high defect density and low carrier mobility. Here, we demonstrate a self-assembly approach that allows the synthesis of single-layer, single crystal and highly nitrogen-doped graphene domain arrays by self-organization of pyridine molecules on Cu surface at temperature as low as 300 °C. These N-doped graphene domains have a dominated geometric structure of tetragonal-shape, reflecting the single crystal nature confirmed by electron-diffraction measurements. The electrical measurements of these graphene domains showed their high carrier mobility, high doping level, and reliable N-doped behavior in both air and vacuum.     

Synthesis of Phosphorus‐Doped Graphene and its Wide Potential Window in Aqueous Supercapacitors

Phosphorus‐doped (P‐doped) graphene with the P doping level of 1.30 at % was synthesized by annealing the mixture of graphene and phosphoric acid. The presence of P was confirmed by elemental mapping and X‐ray photoelectron spectroscopy, while the morphology of P‐doped graphene was revealed by using scanning electron microscopy and transmission electron microscopy. To investigate the effect of P doping, the electrochemical properties of P‐doped graphene were tested as a supercapacitor electrode in an aqueous electrolyte of 1 M H₂SO₄. The results showed that doping of P in graphene exhibited significant improvement in terms of specific capacitance and cycling stability, compared with undoped graphene electrode. More interestingly, the P‐doped graphene electrode can survive at a wide voltage window of 1.7 V with only 3 % performance degradation after 5000 cycles at a current density of 5 A g^?1, providing a high energy density of 11.64 Wh kg^?1 and a high power density of 831 W kg^?1.     

Photochemical desorption from chlorinated Si(100) and Si(111) surfaces — Mechanisms and models

Understanding the mechanisms controlling the anisotropy of microetching is particularly critical as the scale of semiconductor devices shrink. Defining complex, dynamic chemical systems such as halogen etching require microscopic measurements combining kinetics, dynamics, surface layer composition and micromorphology on prototypical surfaces. This study is concerned with two important variables in addition to spontaneous chemical etching, the role of electronic defects induced by high level doping in producing site-specefic reaction and the enhancement of etching by irradiation at low fluences.

Substitutional defects introduced by selective doping significantly influence the rate of chlorine etching by forming shallow electronic states that are ionized at room temperature¹. We have shown that chlorine sticking coeficients as well as laser-assisted etching are significantly affected by doping at very high dopant levels. Enhancement for n-type doping is consistent with the simple assumption that holes at the surface should enhance Si-Si surface bond breaking and in disagreement with the fact that heavily p-doped silicon has a higher chlorine sticking coefficient than n-doped material².

Carrier effects generated by photoirradiation with above bandgap photons are considerably more complex than simple doping. A depletion layer and associated electric field are set up at the surface and minority carriers are preferentially swept to the surface. The type of photocarrier present at the surface is determined by both the doping and the photoirradiation.

Using photoinduced etching of heavily doped Si(100) and Si(111) by chlorine at low laser fluences, we studied the mechanism of photostimulated desorption using core-level photoemission and time-of-flight measurements of the photoproducts². These results will be interpreted in terms of field-modified electron-hole transport together with carrier-modified chlorine adsorption and desorption.     

Electrospinning Synthesis and Photoluminescence Properties of SnO2：xEu3＋ Nanofibers

NnO2：xEu3＋（x=O, 1%, 3%, 5%, molar fraction） fibers were synthesized by electrospinning technology. The size of the as-prepared fibers is relatively uniform and the average diameter is about 200 nm with a large draw ratio. The as-prepared Eu3＋ doped SnO2 nanofibers have a rutile structure and consist of crystallitc grains with an average size of about 10 nm. A slight red shift of the A1gand Bag vibration modes and an additional peak at 288 nm were observed in the Raman spectra of the nanofibers. The energies of bandgaps of the SnO2 nanofiber with Eu doping of 1% and 3% are 2.64 eV, and the energy of bandgap is 2.94 eV with Eu doping of 5%（molar fraction）. There is only orange emission（5D0→7F1 magnetic dipole transition） for Eu doped SnO2 nanofibers, and no red emission could be observed. The orange emission upon indirect excitation splits into three peaks and the peak intensity at the excitation wavelength of 275 nm is higher than that at the excitation wavelength of 488 nm.     

Heavily Doped and Highly Conductive Hierarchical Nanoporous Graphene for Electrochemical Hydrogen Production

Heavy chemical doping and high electrical conductivity are two key factors for metal‐free graphene electrocatalysts to realize superior catalytic performance toward hydrogen evolution. However, heavy chemical doping usually leads to the reduction of electrical conductivity because the catalytically active dopants give rise to additional electron scattering and hence increased electrical resistance. A hierarchical nanoporous graphene, which is comprised of heavily chemical doped domains and a highly conductive pure graphene substrate, is reported. The hierarchical nanoporous graphene can host a remarkably high concentration of N and S dopants up to 9.0 at % without sacrificing the excellent electrical conductivity of graphene. The combination of heavy chemical doping and high conductivity results in high catalytic activity toward electrochemical hydrogen production. This study has an important implication in developing multi‐functional electrocatalysts by 3D nanoarchitecture design.     

Modulation of the thermodynamic, kinetic, and magnetic properties of the hydrogen monomer on graphene by charge doping

The thermodynamic, kinetic, and magnetic properties of the hydrogen monomer on doped graphene layers were studied by ab initio simulations. Electron doping heightens the diffusion potential barrier, while hole doping lowers it. However, both kinds of dopings heighten the desorption potential barrier. The underlying mechanism was revealed by investigating the effect of charge doping on the bond strength of graphene and on the electron transfer and the coulomb interaction between the hydrogen monomer and graphene. The kinetic properties of H and D monomers on doped graphene layers during both the annealing process (annealing time t(0) = 300 s) and the constant-rate heating process (heating rate α = 1.0 K/s) were simulated. Macroscopic diffusion of hydrogen monomers on graphene can be achieved when the doping-hole density reaches 5.0 × 10(13) cm(-2). Both electron and hole dopings linearly reduce the total magnetic moment and exchange splitting, which was explained by a simple exchange model. The laws found in this work had been generalized to explain many phenomena reported in literature. This study can further enhance the understanding of the interaction between hydrogen and graphene and was expected to be helpful in the design of hydrogenated-graphene-based devices.     

Preparation, structure, and optical properties of nanoporous gold thin films

Thin nanoporous gold (np-Au) films, ranging in thickness from approximately 40 to 1600 nm, have been prepared by selective chemical etching of Ag from Ag/Au alloy films supported on planar substrates. A combination of scanning electron microscopy (SEM) imaging, synchrotron grazing incidence small angle X-ray scattering, and N2 adsorption surface area measurements shows the films to exhibit a porous structure with intertwined gold fibrils exhibiting a spectrum of feature sizes and spacings ranging from several to hundreds of nanometers. Spectroscopic ellipsometry measurements (300-800 nm) reveal the onset of surface plasmon types of features with increase of film thicknesses into the approximately 200 nm film thickness range. Raman scattering measurements for films functionalized with a self-assembled monolayer formed from 4-fluorobenzenethiol show significant enhancements which vary sharply with film thickness and etching times. The maximum enhancement factors reach approximately 10(4) for 632.8 nm excitation, peak sharply in the approximately 200 nm thickness range for films prepared at optimum etching times, and show high spot to spot reproducibility with approximately 1 microm laser spot sizes, an indication that these films could be useful as durable, highly reproducible surface-enhanced Raman substrates.     

Doping properties of polydithienylmethine: a study on the correlation between polymer chain length, spectroscopy, and transport

(1S)-(+)-10-Camphorsulfonic acid-doped polydithienylmethine was prepared through an acid-catalyzed condensation reaction of alpha,alpha'-di-2-thienyl-(2,2'-bithiophene)-5,5'-dimethanol and was characterized by 1H NMR spectroscopy and size exclusion chromatography (SEC). The electronic and vibrational properties of the resulting polymer thin films vary with the loadings of the (1S)-(+)-10-camphorsulfonic acid. The dark conductivity and drift mobility, which is significantly high, of the polymer thin films were enhanced with increasing doping levels and reached maximum values of 8.0x10(-5) S.cm-1 and 3.5x10(-2) cm2.V-1.s-1, respectively, at a 7 mol % dopant loading. Higher doping levels (>7 mol %) result in nonuniform polymer thin films with degraded optical quality due to the formation of nanocrystalite and thus a decrease in conductivity and drift mobility was observed. The doped polydithienylmethine thin film also exhibited a photoconductivity response with an excitation at 457 nm and the highest photoconductivity (2x10(-4) S.cm-1) was again observed at the 7 mol % doping level. Spectroscopic investigation suggests that the enhanced transport properties can be attributed to polaronic species present. The electronic and vibrational changes which relate to such doping were characterized by electronic absorption spectroscopy, Raman spectroscopy, and FTIR spectroscopy. The changes in transport values can be directly related to the changes we see in our spectroscopic investigations.