Optical absorption in a heavily doped semiconductor with a narrow forbidden band

The coefficient of interband absorption in a heavily doped, strongly compensated semiconductor with a narrow forbidden band was calculated for emission frequencies ?ω which are smaller than the width? _g of the forbidden band. If the width of the forbidden band is smaller than the characteristic energy w₀ of the random field produced by randomly distributed impurities, the optical absorption gap is missing and the coefficient of absorption increases with the frequency, with the increase being basically proportional toω.     

垂直电场下扭转双层石墨烯光学吸收性质的理论研究

层间扭转角度是对石墨烯物理性质宽波段可调谐的一个新参量.本文采用2°<θ<15°扭转角度下的连续近似模型,获得了不同扭转角度双层石墨烯分别在有、无电场下的能带结构,通过电子-光子相互作用跃迁速率,计算模拟了范霍夫奇点附近电子带内跃迁和带间跃迁所引起的光学吸收谱.结果表明,在无外加电场时,带间跃迁吸收峰的位置随着扭转角度的增大而发生从红外到可见光波段的蓝移,且吸收系数增大,带内跃迁的光学吸收系数相对于带间跃迁高出2个数量级;而存在外加电场时,两个范霍夫奇点在波矢空间的位置发生偏移,带间跃迁吸收峰发生分裂,且两个分裂的吸收峰位置随着电场强度的不断增大而反向行进.上述研究结果对石墨烯材料在光电器件方面的应用有一定指导作用.     

On the theory of interband absorption of light in a field of intense acoustic flux

It is known that the presence in a crystal of an irregular force field leads, in particular, to the appearance of a low-frequency tail on the interband optical absorption curve for light quanta energies smaller than the width of the forbidden band. This paper studies a particular case of such a field, generated by an intense noise flux of longwave acoustic vibrations propagating through the sample. It is shown that the shape of the tail of the absorption curve is different for different mechanisms (deformation, piezoelectric) of formation of the field. The results obtained are used to interpret some experiments which investigate the modulation of the intrinsic absorption edge of piezocrystals by acoustoelectric domains.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 111–116, January, 1973.I would like to thank Professor V. L. Bonch-Bruevich for suggesting this topic and for his helpful advice.     

Distribution of electron density of states in allowed bands and interband absorption in amorphous semiconductors

Different types of electronic transitions and the corresponding spectral characteristics of the absorption coefficient of amorphous semiconductors, where the energy of absorbed photons exceeds the mobility band gap, have been investigated. Partial spectral characteristics of the absorption coefficient and, correspondingly, the distributions of the electron density of the states involved in these optical transitions are obtained for the case where the electron densities of states in the allowed bands and the tails of these bands change with energy according to the power and exponential laws, respectively. The conditions for the occurrence of a peak in the spectral characteristic of the interband absorption coefficient are determined.     

Effect of a random deformation-potential field on interband optical transitions

We have calculated the correlation function for the random field caused by the deformation potential due to spherical clusters randomly distributed throughout the sample. We evaluate the characteristic energy which determines the rate at which the interband optical absorption coefficient decreases as the frequency decreases in the neighborhood of the optical tail.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 3–6, February, 1984.     

Laser field induced interband absorption in a strained GaAs/GaAlAs double quantum well system

Effect of laser field intensity on exciton binding energies is investigated in a GaAs/ GaAlAs double quantum well system. Calculations have been carried out with the variational technique within the single band effective mass approximations using a two parametric trial wave function. The interband emission energy as a function of well width is calculated in the influence of laser field. The laser field induced photoionization cross-section for the exciton placed at the centre of the quantum well is computed as a function of normalized photon energy. The dependence of the photoionization cross-section on photon energy is carried out for the excitons. The resulting spectra are brought out for light polarized along and perpendicular to the growth direction. The intense laser field dependence of interband absorption coefficient is investigated. The results show that the exciton binding energy, interband emission energy, the photoionization cross-section and the interband absorption coefficient depend strongly on the well width and the laser field intensity. Our results are compared with the other existing literature available.     

Optical transitions in spherical quantized layer under the presence of radial electrical field

Single electronic states and direct optical transitions in the quantized spherical layer under the presence of static radial electric field are considered. In dipole approximation, the electrooptical absorption coefficient for interband and inband–intersubband direct transitions are calculated. The selection rules and explicit dependence of absorption coefficient from the field factor and geometrical sizes of the model are revealed.     

Interband transitions in a spherical quantum layer in the presence of an electric field: Spherical rotator model

The interband transitions in a spherical GaAs quantum layer in the presence of an arbitrarily directed electric field are studied theoretically within the framework of the rigid spherical rotator model. The problem is solved under the assumption that the external field is a perturbation. Within the framework of the dipole approximation an expression for the interband absorption coefficient is obtained, and the absorption threshold frequency is determined. The corresponding selection rules are derived. A comparison with the case of quantum transitions in a spherical quantum layer in the presence of a radial electric field is performed.     

外电场对直接带隙Ge量子阱中的光学性质的影响

在有效质量近似下,考虑到外电场的影响,详细研究了直接带隙Ge/GeSi量子阱中带间光跃迁吸收系数和阈值能量随量子阱阱宽,外电场强度的变化情况。结果表明：随着外电场的增强,带间光跃迁吸收强度会逐渐减弱,阈值能量减小,吸收曲线向低能方向移动,出现了红移现象。此外,当量子阱比较大时,外电场对量子阱中带间光跃迁阈值能量的影响更加明显。     

Photoacoustic saturation spectra of GaSe,GaTe and InSe layered semiconductors

The photoacoustic spectra in GaSe, GaTe and InSe semiconductors have been measured in the region of energy greater than the fundamental absorption edge. In this range the photoacoustic signal magnitude can be regarded as independent of the absorption coefficient, i.e. photoacoustic spectroscopy in saturation region, and the dips in the spectra are ascribed to the optical reflection effect inherent in semiconductors interband transitions. The photoacoustic signal phase spectra have been also measured; they are shown to be a useful check of the structures observed in the magnitude saturation spectra. The experimental results are in good agreement with the allowed interband transition energies as observed in thermo-reflectance, electroreflectance and normal reflectivity experiments.     

Simultaneous Effects of External Electric Field and Conduction Band Nonparabolicity on Optical Properties of a GaAs Quantum Dot Embedded at the Center of a GaAlAs Nano-Wire

An investigation of the optical properties of a GaAs spherical quantum dot which is located at the center of a Ga1-xAlx As cylindrical nano-wire has been performed in the presence of an external electric field. The band nonparabolieity effect is also considered using the energy dependent effective mass approximation. The energy eigenvalues and corresponding wave functions are calculated by finite difference approximation and the reliability of calculated wave functions is checked by computing orthogonality. Using computed energy eigenvalues and wave functions, the linear, third-order nonlinear and total optical absorption coefficients and refractive index changes are examined in detail. It is found that （i） Presence of electric field causes both blue and red shifts in absorption spectrum; （ii） The absorption coefficients shift toward lower energies by taking into account the conduction band nonparabolicity; （iii） For large values of electric field the effect of conduction band nonparabolieity is less dominant and parabolic band is estimated correctly; （iv） In the presence of electric field and conduction band nonparabolicity the nonlinear term of absorption coefficient rapidly increases by increasing incident optical intensity. In other words, the saturation in optical spectrum occurs at lower incident optical intensities.     

Transmission Spectra of HgTe-Based Quantum Wells and Films in the Far-Infrared Range

Strained 80-nm-thick HgTe films belong to a new class of materials referred to as three-dimensional topological insulators (i.e., they have a bulk band gap and spin-nondegenerate surface states). Though there are a number of studies devoted to analysis of the properties of surface states using both transport and magnetooptical techniques in the THz range, the information about direct optical transitions between bulk and surface bands in these systems has not been reported. This study is devoted to the analysis of transmission and reflection spectra of HgTe films of different thicknesses in the far-infrared range recorded in a wide temperature range in order to detect the above interband transitions. A peculiarity at 15 meV, which is sensitive to a change in the temperature, is observed in spectra of both types. Detailed analysis of the data obtained revealed that this feature is related to absorption by HgTe optical phonons, while the interband optical transitions are suppressed.

     

Transmission and absorption based photoacoustic methods of determination of the optical absorption spectra of Si samples — Comparison

This paper is a comparison of two photoacoustic methods of determination of the optical absorption coefficient spectra of semiconductors illustrated with results obtained from Si samples. It presents experimental transmission and absorption photoacoustic spectra of Si samples as also the appropriate models leading to the determination of optical absorption coefficient spectra. The idea and the experimental set-up of the analyzed methods are presented in the paper too. From the fitting procedure of theoretical characteristics to experimental transmission and absorption photoacoustic spectra and after computations of the optical absorption coefficient spectra three components of the optical absorption coefficient spectra of Si samples were identified i.e. band to band transitions, Urbach tail and free carrier absorption. Their parameters are given and discussed in the paper. At the end the advantages and disadvantages of both methods are discussed. To the best of our knowledge, no such proof of the correctness of the PA method of determination of optical absorption spectra has been done.     

Spectra of cylindrical quantum dots: The effect of electrical and magnetic fields together with AB flux field

We study the spectral properties of electron quantum dots (QDs) confined in 2D parabolic harmonic oscillator influenced by external uniform electrical and magnetic fields together with an Aharonov–Bohm (AB) flux field. We use the Nikiforov–Uvarov method in our calculations. Exact solutions for the energy levels and normalized wave functions are obtained for this exactly soluble quantum system. Based on the computed one-particle energetic spectrum and wave functions, the interband optical absorption GaAs spherical shape parabolic QDs is studied theoretically and the total optical absorption coefficient is calculated.     

The influence of resonance IR laser radiation on magnetoabsorption in quantum wires

The coefficient of interband absorption of a weak electromagnetic wave by quantum wires in a transverse magnetic field and an intense laser radiation field is calculated. It is shown that, if the laser radiation frequency is equal either to the size quantization frequency (dimensional infrared resonance) or to a hybrid frequency (magnetoinfrared resonance), laser illumination can determine the shape of absorption oscillations. In particular, it is shown that the second magnetoabsorption peak is split into two peaks, the half-widths of which and the distance between which depend on the intensity of resonance laser radiation. The influence of the polarization of IR radiation on the interband absorption in quantum wires is discussed. The dynamics of the frequency dependence of the optical absorption coefficient with increasing intensity of resonance laser radiation is studied.     

Study of sequential two photon absorption and conduction band electrons absorption in ZnSe

Using the Z-scan technique and pump–probe technique with 130 fs laser pulses at 800 nm, we verify that an intraband one-photon absorption follows the interband two photon absorption. Particularly, we find that there is an intraband relaxation interspersed between these two absorption processes for some of the conduction band electrons but not all of them. In this study, we measure the interband two photon absorption coefficient and the absorptive cross sections associated with both excitation pathways within the conduction band. In addition, we estimate the time for relaxation of electrons within the conduction band to be 250 fs.     

直接带隙Ge耦合双量子阱中的光吸收系数

在有效质量近似下,详细研究了直接带隙Ge/GeSi耦合双量子阱中带间光跃迁吸收系数和阈值能量随量子阱结构参数的变化情况。结果表明：随着量子阱阱宽增大,带间光跃迁吸收强度会逐渐减弱,阈值能量减小,吸收曲线向低能方向移动,出现了红移现象。增强耦合量子阱间的耦合效应使得带间光吸收强度显著提升。此外,与非对称耦合量子阱相比,耦合效应对对称耦合量子阱中光吸收系数的影响更为显著。     

直接带隙Ge耦合双量子阱中的光吸收系数

在有效质量近似下,详细研究了直接带隙Ge/Ge Si耦合双量子阱中带间光跃迁吸收系数和阈值能量随量子阱结构参数的变化情况.结果表明:随着量子阱阱宽增大,带间光跃迁吸收强度会逐渐减弱,阈值能量减小,吸收曲线向低能方向移动,出现了红移现象.增强耦合量子阱间的耦合效应使得带间光吸收强度显著提升.此外,与非对称耦合量子阱相比,耦合效应对对称耦合量子阱中光吸收系数的影响更为显著.     

Absorption of light by deep traps in a quasiclassical random field

The low frequency portions of the impurity optical absorption coefficient, produced by the presence of a quasiclassical, i.e., slowly changing over space, Gaussian random force field, are calculated by the Green function method. In the rigid (undeformed by electron transition) lattice approximation, the tail of the absorption coefficient for an isotropic nondegenerate semiconductor will have an exponential form. It is shown that under certain conditions consideration of multiphonon processes has no significant effect on the form of the absorption coefficient curve, but leads only to a certain shift in the threshold frequencies.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 96–102, February, 1973.The author expresses his deep gratitude to V. L. Bonch-Bruevich for his constant interest in the work and valuable advice.     

Electric field induced exciton binding energy and its non-linear optical properties in a narrow InSb/InGaxSb1−x quantum dot

The effect of electric field on the binding energy, interband emission energy and the non-linear optical properties of exciton as a function of dot radius in an InSb/InGa_xSb_1?x quantum dot are investigated. Numerical calculations are carried out using single band effective mass approximation variationally to compute the exciton binding energy and optical properties are obtained using the compact density matrix approach. The dependence of the nonlinear optical processes on the dot sizes is investigated for various electric field strength. The linear, third order non-linear optical absorption coefficients, susceptibility values and the refractive index changes of electric field induced exciton as a function of photon energy are obtained. It is found that electric field and the geometrical confinement have great influence on the optical properties of dots.