H2 气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响

实验采用脉冲磁控溅射法制备铝掺杂氧化锌(AZO)薄膜.为了进一步提高AZO薄膜的光电性能,在溅射过程中加入一定流量的氢气,以高纯ZnO ∶Al₂O₃陶瓷靶为溅射靶材,制备AZO/H透明导电薄膜.通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了氢气流量对AZO薄膜性能的影响.溅射过程中引入氢气,可以促进薄膜的晶化,提高薄膜的迁移率和透过率(400—1100 nm).采用纯氩气溅射制备AZO薄膜的电阻率为5.664×10^-4 Ω·cm 关键词： 氧化锌 氢气流量 磁控溅射 太阳电池     

基片下磁场磁控对溅射辉光及薄膜梯度的影响

溅射时在基片下方放置磁铁，让来自基片下方的磁场发挥磁控作用，以此来研究基片下磁场磁控溅射的方法.发现辉光形貌以及沉积的薄膜厚度分布均发生明显变化的同时，辉光的外形也随着外加磁铁直径的变化而变化.运用磁荷理论对空间磁场分布进行模拟，解释了辉光形貌变化的机理；运用沉积粒子在外加梯度磁场中运动理论解释了膜厚分布. 关键词： 磁控溅射 辉光 磁场模拟 膜厚梯度     

溅射功率对Mo薄膜微结构和性能的影响

 实验采用直流磁控溅射沉积技术在不同溅射功率下制备Mo膜,研究了不同溅射功率下Mo膜的沉积速率、表面形貌及晶型结构,并对其晶粒尺寸和应力进行了研究。利用原子力显微镜观察样品的表面形貌发现随着溅射功率的增加,薄膜表面粗糙度逐渐增大。X射线衍射分析表明薄膜呈立方多晶结构,晶粒尺寸为14.1～17.9 nm;应力先随溅射功率的增大而增大,在40 W时达到最大值(2.383 GPa),后随溅射功率的增大有所减小。     

用粉末靶在玻璃和PI衬底上制备AZO/Ag/AZO薄膜

室温下在玻璃和聚酰亚胺两种不同衬底上, 采用射频磁控溅射法溅射掺铝氧化锌(AZO)粉末靶和固体Ag靶, 制备了两组AZO/Ag/AZO 3层透明导电薄膜, 研究了AZO层厚度对不同衬底3层膜结构和光电性能的影响.结果表明:不同衬底的两组AZO/Ag/AZO薄膜均为多晶膜.当Ag层厚度不变时, 随着AZO层厚度的增加, 两组薄膜电学性能变化不大, 透射峰向长波方向移动.玻璃和PI衬底上制备的AZO(30 nm)/Ag(14 nm)/AZO(30 nm)薄膜, 在550 nm处的透光率分别为85%和70%, 方块电阻分别为2.6 Ω/□和4.6 Ω/□.     

外加磁场对磁控溅射制备氮化硅陷光薄膜的影响

在基底与靶材之间放置磁性强弱不同的永久磁铁来研究外加磁 场对磁控溅射制备氮化硅陷光薄膜的影响. 通过X射线衍射、原子力显微镜 (AFM) 以及紫外分光光度计分别测试了外加磁场前后所制备薄膜的组织结构、表面形貌和光学性能. 结果表明, 外加磁场后, 氮化硅薄膜依然呈现非晶结构; 但是表面形貌发生明显改变, 中心磁场1.50 T下, 薄膜表面为特殊锥状尖峰结构"类金字塔"的突起, 而且这些突起颗粒垂直于基底表面; 在 可见光及近红外范围内, 中心磁场1.50 T 下的薄膜样品平均透射率最大, 平均透射率达到90% 以上, 比未加磁场的样品提高了近1 倍, 具有很好的陷光特性. 关键词： 外加磁场 磁控溅射 氮化硅薄膜 陷光效应     

制膜技术与装置

溅射时在基片下方放置磁铁,让来自基片下方的磁场发挥磁控作用,以此来研究基片下磁场磁控溅射的方法。发现辉光形貌以及沉积的薄膜厚度分布均发生明显变化的同时,辉光的外形也随着外加磁铁直径的变化而变化。运用磁荷理论对磁场分布进行模拟,解释了辉光形貌变化的机理,运用沉积粒子     

衬底温度对磁控溅射法制备的Ag/AZO绒面背反电极性能的影响

通过优化薄膜硅基太阳能电池的背反电极,使背反电极表面出现均匀的类金字塔结构,能够增大入射光在结区的有效光程,提高光子的捕获率,进而会提高薄膜硅基太阳能电池的光电转换效率.本文采用磁控溅射技术在载玻片上制得Ag/AZO(ZnO∶Al)导电薄膜.在控制其它溅射参量为最优化的情况下,研究了衬底温度对Ag/AZO导电薄膜光电性能及其表面形貌的影响.研究表明:随着衬底温度的增加,薄膜的雾度在可见光范围内先增大后减小;当衬底温度为500℃时,雾度取得最大值,在可见光范围内平均达到了95%以上;电阻率随着衬底温度的增加逐渐增大,且衬底温度超过500℃时电阻率急剧增大.在综合考虑其光电性能的情况下,实验得到当衬底温度为500℃时,所获得的叠层薄膜表面雾度值最好且电阻率很小,这将有助于改善太阳能电池的性能.     

衬底温度对磁控溅射法制备的Ag/AZO绒面背反电极性能的影响

通过优化薄膜硅基太阳能电池的背反电极,使背反电极表面出现均匀的类金字塔结构,能够增大入射光在结区的有效光程,提高光子的捕获率,进而会提高薄膜硅基太阳能电池的光电转换效率.本文采用磁控溅射技术在载玻片上制得Ag/AZO(ZnO∶Al)导电薄膜.在控制其它溅射参量为最优化的情况下,研究了衬底温度对Ag/AZO导电薄膜光电性能及其表面形貌的影响.研究表明:随着衬底温度的增加,薄膜的雾度在可见光范围内先增大后减小;当衬底温度为500℃时,雾度取得最大值,在可见光范围内平均达到了95％以上;电阻率随着衬底温度的增加逐渐增大,且衬底温度超过500℃时电阻率急剧增大.在综合考虑其光电性能的情况下,实验得到当衬底温度为500℃时,所获得的叠层薄膜表面雾度值最好且电阻率很小,这将有助于改善太阳能电池的性能.     

粉末靶制备的AZO/Ag/AZO透明导电薄膜的光电性能

室温下,采用射频磁控溅射AZO粉末靶和Ag靶在玻璃基底上制备Ag层厚度分别为12 nm和15 nm两组对称结构掺铝氧化锌/银/掺铝氧化锌(AZO/Ag/AZO)透明导电薄膜,研究了Ag层和AZO层厚度对薄膜光电性能的影响。结果表明:3层薄膜的可见光区平均透光率达到了80%,550 nm处的最高透过率达到了88%,方块电阻小于5 Ω/□。Ag层厚度是影响AZO/Ag/AZO薄膜光电性能的主要因素,AZO层的厚度对薄膜光学性能影响较大。     

射频溅射功率对AZO薄膜结构及光电特性和热稳定性的影响

采用射频磁控溅射法,在玻璃基片上制备了ZnO:Al(AZO)透明导电薄膜。用X射线衍射(XRD)仪、紫外-可见分光光度计、方块电阻测试仪和台阶仪对不同溅射功率下Al掺杂ZnO薄膜的结晶、光学、电学性能、沉积速率以及热稳定性进行了研究。研究结果表明:不同溅射功率下沉积的AZO薄膜具有六角纤锌矿结构,均呈c轴择优取向;(002)衍射峰强和薄膜的结晶度随溅射功率的提高逐渐增强;随溅射功率的提高,AZO薄膜的透射率有所下降,但在可见光(380～780nm)范围内平均透射率仍80%;薄膜的方块电阻随溅射功率的增加逐渐减小;功率为160～200W时,薄膜的热稳定性最好,升温前后方块电阻变化率为13%。     

Effects of hydrogen flux on the properties of Al-doped ZnO films sputtered in Ar + H2 ambient at low temperature

Al-doped ZnO (AZO) transparent conductive thin films were grown by magnetron sputtering with AZO (98 wt.% ZnO, 2 wt.% Al₂O₃) ceramic target in Ar + H₂ ambient at a relatively low temperature of 100 °C. To investigate the dependence of crystalline and properties of as-grown AZO films on the H₂-flux, X-ray diffraction (XRD), X-ray photoemission spectrometer (XPS), Hall and transmittance spectra measurements were employed to analyze the AZO samples deposited with different H₂-flux. The results indicate that H₂-flux has a considerable influence on the transparent conductive properties of AZO films. The resistivity of 4.15 × 10⁻⁴ Ω cm and the average transmittance of more than 94% in the visible range were obtained with the optimal H₂-flux of 1.0 sccm. Such a low temperature growing method present here may be especially useful for some low-melting point photoelectric devices and substrates.     

Deposition of Ni, Ag, and Pt-based Al-doped ZnO double films for the transparent conductive electrodes by RF magnetron sputtering

Ni, Ag, and Pt-based Al-doped ZnO (AZO) films have been deposited as transparent conductivity layers on quartz by RF magnetron sputtering and characterized by X-ray diffraction, Hall measurement, optical transmission spectroscopy, scanning electron microscopy (SEM). The deposition of thicker metal layer in double layers resulted in lowering the effective electrical resistivity with a slight reduction of their optical transmittance. A film consisting of AZO (250 nm)/Ni (2 nm) double structure, exhibits a sheet resistance of 21.0 Ω/sq, a high transmittance of 76.5%, and characterize good adhesion to substrate. These results make the satisfactory for GaN-based light-emitting diodes (LEDs) and solar cells with metal-based AZO double films as current spread layers.     

Effects of substrate temperature on the efficiency of hydrogen incorporation on the properties of Al-doped ZnO films

Al-doped ZnO (AZO) transparent conducting films were successfully prepared on glass substrates by RF magnetron sputtering at different substrate temperatures in Ar and H₂ + Ar sputtering ambient. The effects of substrate temperature on the effectiveness of hydrogen incorporation in Al-doped ZnO films were investigated. The microstructural, electrical and optical properties of AZO films were systematically analyzed by surface profiler, X-ray diffractometry, scanning electron microscope, four-point probe measurement and UV/vis spectrophotometer. The XRD patterns and SEM pictures indicate that the crystallinity of AZO thin films was markedly improved with hydrogen incorporation at low substrate temperature, while the improvement of crystallinity was not an obvious change at high substrate temperature. The results also indicate that hydrogen incorporation has the stronger effectiveness on the transparent conductive properties of AZO films with the substrate temperature decreasing. The resistivity of the films decreases, especially for lower substrate temperatures, due to the incorporation of hydrogen atoms. These results suggest that substrate temperature should be controlled to the lower level to effectively reduce resistivity without detriment to transmittance of AZO thin films when hydrogen is incorporated.     

AgO_x界面插入层对GZO电极LED器件性能的影响

采用磁控溅射的方法在p-GaN上制备了GZO透明导电薄膜,通过在p-GaN和GZO界面之间插入AgOx薄层来改善LED器件的接触性能。研究结果表明:氮气退火后,采用界面插入层的AgOx/GZO薄膜电阻率为5.8×10-4Ω.cm,在可见光的透过率超过80%。AgOx界面插入层有效地降低了GZO与p-GaN之间的接触势垒,表现出良好的欧姆接触特性,同时使LED器件的光电性能获得了显著的提高。在50 mA的注入电流下,相比于常规的GZO电极LED器件,AgOx/GZO电极LED器件的正向电压由9.68 V降至6.92 V,而发光强度提高了13.5%。     

Room-temperature deposition of transparent conducting Al-doped ZnO films by RF magnetron sputtering method

Transparent conductive Al-doped zinc oxide (AZO) films with highly (0 0 2)-preferred orientation were deposited on quartz substrates at room temperature by RF magnetron sputtering. Optimization of deposition parameters was based on RF power, Ar pressure in the vacuum chamber, and distance between the target and substrate. The structural, electrical, and optical properties of the AZO thin films were investigated by X-ray diffraction, Hall measurement, and optical transmission spectroscopy. The 250 nm thickness AZO films with an electrical resistivity as low as 4.62 × 10⁻⁴ Ω cm and an average optical transmission of 93.7% in the visible range were obtained at RF power of 300 W, Ar flow rate of 30 sccm, and target distance of 7 cm. The optical bandgap depends on the deposition condition, and was in the range of 3.75-3.86 eV. These results make the possibility for light emitting diodes (LEDs) and solar cells with AZO films as transparent electrodes, especially using lift-off process to achieve the transparent electrode pattern transfer.     

磁控溅射制备本征ZnO/Ag/ZnO透明导电薄膜的性质研究

室温下采用射频磁控溅射氧化锌（ZnO）粉末靶、银（Ag）靶,在玻璃衬底上制备ZnO/Ag/ZnO透明导电薄膜。首先,ZnO厚度为30 nm时,改变Ag厚度制备3层透明导电薄膜,研究Ag层厚度及膜层间配比对光电性能的影响;其次,按ZnO∶Ag厚度比为30∶11比例制备不同厚度的3层透明导电薄膜,研究多层厚度对薄膜光电性能的影响。结果表明：Ag厚度为8 nm及11 nm的ZnO/Ag/ZnO表面相对平整,结晶程度较好,在可见光范围内最高透过率达到90%及86%,并且方块电阻为6 Ω/□及3.20 Ω/□,具有优良的光电性;当按配比制备ZnO/Ag/ZnO 3层膜时,增加ZnO厚度对Ag层的增透作用反而减弱,同时增加Ag层厚度也会降低3层薄膜的整体光学性。     

VO$lt;sub$gt;2$lt;/sub$gt;/AZO复合薄膜的制备及其光电特性研究

采用直流磁控溅射和后退火氧化的方法在掺铝氧化锌(AZO)导电玻璃上制备了二氧化钒(VO₂)薄膜,研究了不同的退火温度、退火时间对VO₂/AZO复合薄膜制备的影响,并对复合薄膜的结构、组分、光电特性进行了测试与分析. 结果表明,导电玻璃上的AZO没有改变VO₂的取向生长,但明显改变了VO₂薄膜的表面形貌特征. 与用相同工艺和条件在普通玻璃基底上制备的VO₂薄膜相比,VO₂/AZO复合薄膜的相变温度降低约25 ℃,热滞回线宽度收窄至6 ℃,相变前后可见光透过率均在50%以上,1500 nm处红外透过率约为55%和21%,电阻率变化达3 个数量级. 该复合薄膜表面平滑致密,制备工艺简单,性能稳定,可应用于新型光电器件. 关键词： 2')" href="#">VO₂ AZO 热致相变 光电特性     

PECVD制备AZO（ZnO:Al）透明导电薄膜

采用PECVD（等离子体增强化学气相沉积）工艺在普通玻璃和Si基上制备出了方块电阻低至89 Ω,可见光透过率高达79%,对基体附着力强的多晶态的AZO（ZnO:Al）薄膜.采用PECVD法制备AZO薄膜是一种有益的尝试,AZO透明导电薄膜不仅具有与ITO（透明导电薄膜,如In₂O₃:Sn）可比拟的光电特性,而且价格低廉、无毒,在氢等离子体环境中更稳定,所获结果对实际工艺条件的选择具有一定借鉴作用和参考价值. 关键词： AZO（ZnO:Al） 等离子体增强化学气相沉积 透明导电薄膜