Optical reflectivity study of silicon ion implanted poly(methyl methacrylate)

The optical reflectivity (both specular and off-specular) of poly(methyl methacrylate) (PMMA) implanted with silicon ions (Si⁺) at energy of 50 keV, is studied in the spectral range 0.25-25 μm. The effect from the Si⁺ implantation on the reflectivity of two PMMA materials is examined in the dose range from 10¹⁴ to 10¹⁷ ions/cm² and is linked to the structure formed in this ion implanted plastic. As compared to the pristine PMMA, an enhancement of the reflectivity of Si⁺ implanted PMMA is observed, that is attributed to the modification of the subsurface region of PMMA upon the ion implantation. The ion-produced subsurface organic interface is also probed by laser-induced thermo-lens.     

Raman study on the pressure-induced disordered state of polystyrene

The pressure-induced disordered state was first reported for iPS, the polymer showing thermal shrinkage. The low-frequency Raman study showed clearly that pressure introduces irregularity into the polymer backbone of iPS. It has also been revealed that there exist two types of vibrational modes, which show different sensitivities on the regularity of the main chain. These modes indicate two distinctive features of dispersion in the ordered form. In the disordered state, the dispersive modes smear out and the dispersionless one survives to be observed. We conclude that pressure causes the ordered-disordered conversion like thermal shrinkage. This conversion will be a common feature of the polymers showing thermal shrinkage and would be able to take place at relatively low pressure.     

Optical properties of Eu(fod)3-doped polymers using supercritical carbon dioxide

X-ray diffraction pattern of solvated Eu(fod)₃(H₂O)_1,5(i-PrOH)_0,5 form of Eu(fod)₃ complex (fod=6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate) is presented. The photoluminescence (PL) spectra of Eu³⁺ ions in polycrystalline powder Eu(fod)₃ and also in Eu(fod)₃-doped polymethylmethacrylate (PMMA), polypropylene (PP) and polydimethylsiloxane (PDMS) were investigated. It is revealed that the matrix influences the temperature quenching of PL intensity in the range 20-100 °C. A polycrystalline powder Eu(fod)₃ and Eu(fod)₃-doped PP are the most effective materials for PL quenching. It is shown that water molecules in the first coordinating sphere of Eu³⁺ ions increase PL intensity temperature quenching.     

Influence of Al-doping on the structure and optical properties of ZnO films

Al-doped ZnO (ZnO:Al) thin films with c-axis preferred orientation were deposited on glass substrates using the radio frequency reactive magnetron sputtering technique. The effect of Al concentrations on the microstructure and the luminescence properties of the ZnO:Al thin films were studied by atomic force microscopy (AFM), X-ray diffraction (XRD), and fluorescence spectrophotometer. The results showed that the crystallization of the films was promoted by appropriate Al concentrations; the photoluminescence spectra (PL) of the samples were measured at room temperature. Strong blue peak located at 437 nm (2.84 eV) and two weak green peaks located at about 492 nm (2.53 eV) and 524 nm (2.37 eV) were observed from the PL spectra of the four samples. The origin of these emissions was discussed. In addition, absorption and transmittance properties of the samples were researched by UV spectrophotometer; the UV absorption edge shifted to a shorter wavelength first as Al was incorporated, and then to a longer wavelength with the increasing Al concentrations. The optical band gaps calculated based on the quantum confinement model are in good agreement with the experimental values.     

Concentration dependence of photoluminescence properties in poly[(2-methoxy,5-octoxy)1,4-phenylenevinylene] thin films

Photoluminescence and selective excitation photoluminescence measurements at room temperature have been performed on poly[(2-methoxy,5-octoxy) 1,4-phenylenevinylene] (MO-PPV) thin films, which are prepared from MO-PPV chloroform solutions of different concentrations. The position of the S0→S1 absorption peak shows red-shift and broadened relative to that in an MO-PPV solution form due to the solidification effect, while no relative shifts between the absorption spectra of these film samples are observed. A long wavelength emission component near 630 nm has been identified as S2→S0 vibronic transition through the Gaussian decomposition method and confirmed by below-gap PL and selective-excitation PL experiments. This second vibronic component cannot be observed in the spectra of thick films. The PL efficiency of MO-PPV thin film is also investigated through comparison with that of an MEH-PPV thin film and explained by the side substituent effect.     

The characterization of mechanical and surface properties of poly (glycerol-sebacate-lactic acid) during degradation in phosphate buffered saline

The present study synthesized a poly (glycerol-sebacate-lactic acid) (PGSL) with 1:1:0.5 mole ratio of glycerol, sebacate and lactic acid and investigated the degradation characteristics of the polymer in phosphate buffered saline (PBS) at 37 °C in vitro by means of mass loss tests, geometry, differential scanning calorimeter (DSC) measurements, tensile analysis and scanning electron microscopy (SEM). The maintained geometry, linear mass loss, and minor crack formation on the surface during degradation characterized both the bulk degradation and surface erosion of the polymer. By day 30 of degradation, the mass lost reached 16%. The elastic modulus, tensile strength and elongation at breakage of PGSL were correlative to the period of degradation.     

Surface modification of poly(propylene carbonate) by oxygen ion implantation

Poly(propylene carbonate) (PPC) was implanted by oxygen ion with energy of 40 keV. The influence of experimental parameters was investigated by varying ion fluence from 1 × 10¹² to 1 × 10¹⁵ ions/cm². XPS, SEM, surface roughness, wettability, hardness, and modulus were employed to investigate structure and properties of the as-implanted PPC samples. Eight chemical groups, i.e., carbon, CH, COC, CO, OCO, CO, , and groups were observed on surfaces of the as-implanted samples. The species and relative intensities of the chemical groups changed with increasing ion fluence. SEM images displayed that irradiation damage was related strongly with ion fluence. Both surface-recovering and shrunken behavior were observed on surface of the PPC sample implanted with fluence of 1 × 10¹⁵ ions/cm². As increasing ion fluence, the surface roughness of the as-implanted PPC samples increased firstly, reached the maximum value of 159 nm, and finally decreased down the minimum value. The water droplet contact angle of the as-implanted PPC samples changed gradually with fluence, and reached the minimum value of 70° with fluence of 1 × 10¹⁵ ions/cm². The hardness and modulus of the as-implanted PPC samples increased with increasing ion fluence, and reached their corresponding maximum values with fluence of 1 × 10¹⁵ ions/cm². The experimental results revealed that oxygen ion fluence closely affected surface chemical group, morphology, surface roughness, wettability, and mechanical properties of the as-implanted PPC samples.     

Optical study of anthracene molecules doped in fluorene single crystals

Properties of two luminescence centers, which are observed in anthracene-doped fluorene crystal as concentration increases, have been investigated to clarify their origin. Excitation spectra and concentration dependence of absorption spectra were measured and two types of luminescence are attributed to anthracene molecule pair centers with weak and strong interaction. Dipole-dipole interactions between two anthracence molecules of various configurations are estimated and possible configuration for two types of luminescence is proposed.     

Direct creation of black silicon using femtosecond laser pulses

Using a direct femtosecond laser surface structuring technique, an array of equally spaced parallel nanostructure-textured microgrooves on silicon was produced that causes a dramatic reduction of the treated silicon reflectance. The processed area appears velvet black at all viewing angles. Throughout the visible region, the reflectance of the blackened surface is less than 5%. The antireflection effect of the processed surface also extends to the mid-infrared wavelength range. Furthermore, this technique has a potential in reducing silicon reflectance at terahertz frequencies and even in millimeter wavelength range.     

The structure and photoluminescence properties of Cr-doped SiC films

Cr-doped SiC films are prepared by the RF-magnetron sputtering technique on Si substrates with a composite target of a single-crystalline SiC containing several Cr pieces on the surface. The as-deposited films are annealed in the temperature of 1000 °C under nitrogen ambient. The structure of the samples has been characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), and Raman scattering measurement. The results show that the SiC crystal is formed and that majority of Cr doped in the SiC resulted in the formation of the C clusters. Then the photoluminescence (PL) spectra of the samples are observed in the visible range at room temperature. The optical properties of the samples have also been discussed briefly. We attribute the origin of the 412-nm PL band to a kind of C cluster center.     

Arresting photodegradation of porous silicon by a polymer coating

Light soaking in air rapidly decreases photoluminescence (PL) of porous silicon (PS) and increases electron spin resonance (ESR) signal. In vacuum, a short light exposure (<2700 s) increases PL and decreases ESR, but longer exposures again degrade the PL. We could arrest the light-induced degradation over long periods by applying a thin polymer coating, which resulted in constant PL and ESR intensities. The PL intensity of coated PS is comparable to the PL intensity of a fresh PS sample in air. FTIR spectrum suggests new bond formations at the PS/polymer interface that may be responsible for PL stability.     

Optical properties of ZnO and ZnO:Ce layers grown by spray pyrolysis

In this paper, zinc oxide (ZnO) and cerium-doped zinc oxide (ZnO:Ce) films were deposited by reactive chemical pulverization spray pyrolysis technique using zinc and cerium chlorides as precursors. The effects of Ce concentration on the structural and optical properties of ZnO thin films were investigated in detail. These films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) measurements. All deposited ZnO layers at the temperature 450 °C are polycrystalline and indicate highly c-axis oriented structure. The dimension of crystallites depends on incorporation of Ce atoms into the ZnO films. The photoluminescence spectra of the films have been studied as a function of the deposition parameters such as doping concentrations and post grows annealing. Photoluminescence spectra were measured at the temperature range from 13 K to 320 K.     

Initial study on the structure and photoluminescence properties of SiC films doped with Al

SiC films doped with aluminum (Al) were prepared by the rf-magnetron sputtering technique on p-Si substrates with a composite target of a single crystalline SiC containing several Al pieces on the surface. The as-deposited films were annealed in the temperature range of 400-800 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The results show that the introduction of Al into films hinders crystalline formation process. And with the increase of annealing temperature, more Si particles are formed in the films, which strongly affect the optical absorption properties. The photoluminescence (PL) spectra of the samples show two peaks at 370 nm and 412 nm. The intensities of the PL peaks are evidently improved after Al doped. We attribute the origin of the two PL peaks to a kind of Si-related defect centres. The obtained results are expected to have important applications in modern optoelectronic devices.     

The study of optical properties of amorphous thin films of mixed oxides In<Subscript>2</Subscript>O<Subscript>3</Subscript>—SnO<Subscript>2</Subscript> system,deposited by co-evaporation

A discussion of optical properties of mixed oxides In₂O₃—SnO₂ system is presented. Film thickness, substrate temperature, composition (in molar %) and annealing have a profound effect on the structure and optical properties of these films. Initially the increase in band gap with the increase of SnO₂ content in In₂O₃ is due to the increase in carrier density as a result of donor electrons from tin. The decrease in band gap above the critical Sn content is caused by the defects formed by Sn atoms, which act as carrier traps rather than electron donors. The increase in band gap with film thickness is caused by the increase in free carrier density which is generated by (i) Sn atom substitution of In atom, giving out one extra electron and (ii) oxygen vacancy acting as two electrons donor. The decrease in band gap with substrate temperature and annealing is due either to the severe deficiency of oxygen, which deteriorate the film properties and reduce the mobility of the carriers, or to the formation of indium species of lower oxidation state (In²⁺).     

Modulation of the photoluminescence of Si quantum dots by means of CO2 laser pre-annealing

Si quantum dots (QDs) embedded in SiO₂ can be normally prepared by thermal annealing of SiO_x (x < 2) thin film at 1100 °C in an inert gas atmosphere. In this work, the SiO_x thin film was firstly subjected to a rapid irradiation of CO₂ laser in a dot by dot scanning mode, a process termed as pre-annealing, and then thermally annealed at 1100 °C for 1 h as usual. The photoluminescence (PL) intensity of Si QD was found to be enhanced after such pre-annealing treatment. This PL enhancement is not due to the additional thermal budget offered by laser for phase separation, but attributed to the production of extra nucleation sites for Si dots within SiO_x by laser irradiation, which facilitates the formation of extra Si QDs during the subsequent thermal annealing.     

Optical and mechanical properties of alumina films fabricated on Kapton polymer by plasma immersion ion implantation and deposition using different biases

Alumina films are fabricated on Kapton polymer by aluminum plasma immersion ion implantation and deposition in an oxidizing ambient and the effects of the bias voltage on the film properties are investigated. Rutherford backscattering spectrometry (RBS) reveals successful deposition of alumina films on the polymer surface and that the O to Al ratio is higher than that of stoichiometric Al₂O₃. The thickness of the modified layers decreases from 200 to 120 nm when the bias voltage is increased from 5 to 20 kV. Our results indicate that higher bombardment energy may lead to higher crack resistance and better film adhesion. However, a higher sample bias degrades the optical properties of the films as indicated by the higher absorbance and lower energy band gap. Therefore, the processing voltage must be optimized to yield a protective layer with the appropriate thickness, superior optical properties, as well as high crack resistance.     

Modification of wetting properties of CR39 by plasma source ion implantation

Plasma source ion implantation (PSII), a hybrid implantation technique between ion beams and immersion plasmas has been used to modify CR39 surfaces for improved wettability providing both advancing (θ_a) and receding (θ_r) contact angles below 5°. The modifications brought to the polymer surface structure have been characterized by X-ray photoelectron spectroscopy (XPS) and its combination with chemical derivatization (CD-XPS). Oxygen desorption has been observed in spite of the very hydrophilic surfaces. C_1s XPS peak has been displaced toward greater energies, while the opposite has been found for O_1s, both involving new components and strong modifications after ion implantation treatment. Strong evidences about the formation of new chemical functions, like OOH, COOH and CC, have been found and have provided an explanation for the increased wettability.     

Nanotomographic examinations of ion tracks in cellulose nitrate by ion energy loss spectrometry

Received: 13 October 1997/Accepted: 25 August 1998     

Photoluminescence enhancement and stabilisation of porous silicon passivated by iron

Iron is incorporated in porous silicon (PS) by impregnation method using Fe(NO₃)₃ aqueous solution. The presence of iron in PS matrix is shown from energy-dispersive X-ray (EDX) analysis and Fourier transform infrared (FTIR) measurements. The optical properties of PS and PS-doped iron are studied by photoluminescence (PL). The iron deposited in PS quenched the silicon dangling bonds then increased the PL intensity. The PL peak intensity of impregnated PS is seven times stronger than that in normal PS. Upon exposing iron-PS sample to ambient air, there is no significant change in peak position but the PL intensity increases during the first 3 weeks and then stabilises. The stability is attributed to passivation of the Si nanocrystallites by iron.     

Microstructures and optical properties of Cu-doped ZnO films prepared by radio frequency reactive magnetron sputtering

Pure and Cu-doped ZnO (ZnO:Cu) thin films were deposited on glass substrates using radio frequency (RF) reactive magnetron sputtering. The effect of substrate temperature on the crystallization behavior and optical properties of the ZnO:Cu films have been studied. The crystal structures, surface morphology and optical properties of the films were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and a fluorescence spectrophotometer, respectively. The results indicated that ZnO films showed a stronger preferred orientation toward the c-axis and a more uniform grain size after Cu-doping. As for ZnO:Cu films, the full width at half maxima (FWHM) of (0 0 2) diffraction peaks decreased first and then increased, reaching a minimum of about 0.42° at 350 °C and the compressive stress of ZnO:Cu decreased gradually with the increase of substrate temperature. The photoluminescence (PL) spectra measured at room temperature revealed two blue and two green emissions. Intense blue-green luminescence was obtained from the sample deposited at higher substrate temperature. Finally, we discussed the influence of annealing temperature on the structural and optical properties of ZnO:Cu films. The quality of ZnO:Cu film was markedly improved and the intensity of blue peak (∼485 nm) and green peak (∼527 nm) increased noticeably after annealing. The origin of these emissions was discussed.