化学溶液沉积法制备涂层导体SmBiO3（SBO）缓冲层的研究

通过740-820℃之间进行低温成相,分别在氩气和空气中LaAlO3（LAO）单晶基底上沉积得到了有较大应用前景的涂层导体SmBiO3（SBO）缓冲层.740-800℃所得的缓冲层c轴取向良好,致密、平整、无裂纹.当温度达到820℃时,SBO表面开始出现裂缝.SBO薄膜的相组成和微结构利用XRD和SEM进行分析.研究结...     

改进型前驱液对化学溶液法制备YBCO薄膜的影响

传统全三氟乙酸前驱液对涂敷环境湿度、低温预分解过程中的升温速率和水汽分压等因素具有敏感性,采用改进型前驱液可以降低其敏感性,从而有利于涂层导体的连续制备.我们提出的改进型前驱液中,三氟乙酸钇、三氟乙酸钡和苯甲酸铜是前驱体,甲醇和丙酸的为溶剂.采用化学溶液法在铝酸镧单晶衬底上制备YBCO,低温分解阶段以1～5℃/min快速升温,可以获得低温后的前驱膜光滑完整,无裂纹.通过X衍射分析和扫描电镜分析了薄膜的织构和表面微结构,四引线法测试薄膜超导电性.采用改进型前驱液制备的薄膜超导转变温度(Tc)为90K,在77K、自场下临界电流密度(Jc)为1MA/cm2.     

化学溶液沉积(CSD)法制备YBCO薄膜研究进展

采用CSD法制备YBCO薄膜可精确的控制组份,不需要真空设备,成为近年来的研究热点之一。文中概述了CSD法制备YBCO薄膜的研究进展,总结了在不同的CSD工艺中,起始原料、化学添加剂对YBCO薄膜热处理时间、质量、可重复性等因素的影响。     

化学溶液沉积法制备YBCO薄膜的快速分解工艺研究

文中对化学溶液沉积法快速制备YBCO薄膜的工艺进行了探索。通过对分解工艺的优化,成功将薄膜的干燥分解时间缩短到1小时以内,而传统工艺则需要10小时以上的处理时间。以快速分解工艺成相的YBCO薄膜的X射线衍射、扫面电镜和物性测量结果表明薄膜具有良好的c轴外延织构,表面微观形貌平整致密,临界超导转变温度(Tc)为92K。     

基于乳酸-硝酸盐体系化学溶液法的GdBiO_3缓冲层的快速制备

以YSZ为基片对以乳酸为溶剂的Gd Bi O3(GBO)缓冲层的化学溶液法(CSD)快速制备工艺进行了研究,着重研究了工艺温度对挥发和外延过程的影响。研究结果表明,涂覆薄膜中的乳酸可以在115℃-30min内几乎完全挥发,低于100℃时难以完全挥发出无水的硝酸盐混合膜。Ar气中GBO的最佳外延温度为800℃时间为1h。GBO缓冲层CSD法制备总工艺时间约为1.5小时。在此YSZ/GBO缓冲层上CSD法制备的YBa2C3Oz膜的转变温度可达90K。     

化学溶液沉积制备氧化石墨烯掺杂YBCO薄膜

YBCO薄膜在液氮温区具有优异的性能,围绕低成本溶液沉积技术和新型添加剂的研究是目前研究热点.采用化学溶液沉积技术成功制备出氧化石墨烯掺杂YBCO薄膜.通过在YBCO前驱液中引入氧化石墨烯,改变YBCO胶体的热解行为,促进YBCO前驱体的分解.在晶化过程中,氧化石墨烯有利于抑制YBCO晶粒长大.结果表明,适量添加氧化石墨烯可以改善YBCO薄膜的微观形貌和外延生长,提高超导层的性能.     

微波等离子体化学气相沉积法制备C3N4薄膜的结构研究

采用微波等离子体化学气相沉积法,用高纯氮气（99．999％）和甲烷（99．9％）作反应气体,在单晶Si(100)基片上沉积C3N4薄膜,利用扫描电子显微镜观察薄膜形貌,表明薄膜由密排的六棱晶棒组成,X射线衍射和透射电子显微镜结构分析说明该薄膜主要由β－C3N4和α－C3N4组成,并且这些结果与a-C3N4相符合较好,由虎克定律近似关系式计算了α－和β－C3N4的傅里叶变换红外光谱和Raman光谱,实验结果支持C－N共价键的存在。     

微波等离子体化学气相沉积法制备C3N4薄膜的结构研究

采用微波等离子体化学气相沉积法,用高纯氮气(99.999%)和甲烷(99.9%)作反应气体,在单晶Si(100)基片上沉积C₃N₄薄膜.利用扫描电子显微镜观察薄膜形貌,表明薄膜由密排的六棱晶棒组成.X射线衍射和透射电子显微镜结构分析说明该薄膜主要由β-C₃N₄和α-C₃N₄组成,并且这些结果与α-C₃N₄相符合较好.由虎克定律近似关 关键词： 3N₄')" href="#">C₃N₄ 微波等离子体化学气相沉积法 薄膜沉积     

化学溶液法制备的Pb(Mg1/3 Nb2/3)O3-PbTiO3薄膜的光学性能

用化学溶液方法在宝石衬底及有LaNiO3缓冲层的Pt/TiO2/SiO2/Si衬底上制备了92%Pb(Mg1/3 Nb2/3)O3-8%PbTiO3(PMNT)薄膜,X射线衍射测试结果表明:在有LaNiO3缓冲层的Pt/TiO2/SiO2/Si衬底上制备的PMNT薄膜几乎是纯钙钛矿相,且薄膜呈现(110)择优取向.通过对Pt/TiO2/SiO2/Si衬底上的PMNT薄膜在2.5-12.6μm波长范围内的红外椭圆偏振光谱测试,并拟合得到了PMNT薄膜在2.5-12.6μm波长范围内的光学常数(n和k),通过对宝石衬底上的PMNT薄膜在200-1100nm波长范围内的可见-紫外透过率测试,并拟合得到了PMNT薄膜在200-1100nm波段的光学常数(n和k)和吸收系数α,进而推导出PMNT薄膜的禁带宽度为4.03eV.     

YBiO3缓冲层的化学溶液沉积法快速制备

基于固态分解原理,提出并验证了名为两步加热法(TSH)的CSD快速制备YBiO3缓冲层的技术方案。研究发现,聚丙烯酸-硝酸盐溶液前驱膜中的溶剂聚丙烯酸可以在40min内完全挥发。得到的无水硝酸盐混合物可以直接在高温下分解,并于1h内在钇稳定氧化锆上外延生长出YBiO3缓冲层,总工艺时间不足2h。测试结果表明,由此制得的YBiO3薄膜表面同样平整、致密,且具有良好的立方织构。两步加热法为涂层导体缓冲层的低成本连续制备提供了新的思路。     

Effects of co-substitution on the electrical properties of BiFeO3 thin films prepared by chemical solution deposition

Ferroelectric BiFeO₃ thin films with Nd-Cr (or Sm-Cr) co-substitution (denoted by BNdFCr and BSmFCr, respectively) were deposited on the Pt(2 0 0)/TiO₂/SiO₂/Si(1 0 0) substrates by a chemical solution deposition method. X-ray diffraction patterns revealed the formation of BNdFCr and BSmFCr thin films without any secondary phases. The co-substituted BNdFCr (or BSmFCr) thin films, which were annealed at 550 °C for 30 min in N₂ atmosphere, exhibited enhanced electrical properties compared to BFO thin films with the remanent polarization (2P_r) and coercive electric field (2E_c) of 196, 188 μC/cm² and 600, 570 kV/cm with the electric field of 800 kV/cm, respectively. The leakage current densities of BNdFCr and BSmFCr thin films measured at room temperature were approximately three orders of magnitude lower than that of BFO thin film, and the leakage current at room temperature of the thin films exhibited three distinctive conduction behaviors. Furthermore, the values of pulse polarizations [i.e., +(P*-P^{^}) or −(P*-P^{^})] of BNdFCr and BSmFCr thin films were reasonably unchanged up to 1.4 × 10¹⁰ switching cycles.     

Photovoltaic effect in BiFeO3/BaTiO3 multilayer structure fabricated by chemical solution deposition technique

Photovoltaic (PV) properties of bismuth ferrite (BFO) and barium titanate (BTO) multilayered ferroelectric BFO/BTO/BFO/BTO thin film structure deposited on Pt/Ti/SiO₂/Si substrates using chemical solution deposition technique are presented. X-ray diffraction analysis confirms pure phase polycrystalline nature of deposited perovskite multilayered structures. Simultaneously both distorted rhombohedral (R3c) and tetragonal phases (P4mm) of the respective BFO and BTO components are also well retained. The ferroelectric sandwiched structures grown on fused quartz substrates exhibit high optical transmittance (~70%) with an energy band gap 2.62 eV. Current–voltage characteristics and PV response of multilayered structures is determined in metal-ferroelectric-metal (MFM) capacitor configuration. Considerably low magnitude of dark current density 1.53×10⁻⁷ A at applied bias of 5 V establish the resistive nature of semi-transparent multilayered structure. Enhanced PV response with 40 nm thin semitransparent Au as top electrode is observed under solid-state violet laser illumination (λ – 405 nm, 160 mW/cm²). The short circuit current density and open circuit voltage are measured to be 12.65 µA/cm² and 1.43 V respectively with a high retentivity. The results obtained are highly encouraging for employing artificial multilayered engineering to improve PV characteristics.     

化学溶液法制备的Pb(Mg1/3Nb2/3)O3-PbTiO3薄膜的光学性能

用化学溶液方法在宝石衬底及有LaNiO₃缓冲层的Pt/TiO₂/SiO₂/Si衬底上制备了92%Pb(Mg_1/3Nb_2/3)O₃-8%PbTiO₃(PMNT)薄膜，X射线衍射测试结果表明：在有LaNiO₃缓冲层的Pt/TiO₂/SiO₂/Si衬底上制备的PMNT薄膜几乎是纯钙钛矿相，且薄膜 关键词： PMNT薄膜 光学性能 化学溶液法     

化学沉淀法制备硒化铅薄膜

采用化学沉淀的方法沉淀PbSe薄膜,分别加入缓冲剂联氨(方法A)和碘化钾(方法B)。对反应原理进行了分析,对制备过程进行了优化,分别制备出了高质量的PbSe薄膜。采用XRD、SEM、EDS以及红外光谱测试对所制备样品进行了分析。结果表明,两种方法制备均为PbSe多晶薄膜,方法A制备薄膜结晶质量更好,择优生长方向明显;薄膜颗粒度、表面粗糙度都小于方法B;两种薄膜的Pb元素与Se元素比例接近化学计量比,方法B含有少量I元素;两种方法制备样品的吸收边相对带边跃迁都发生蓝移。     

Bismuth oxide thin films prepared by chemical bath deposition (CBD) method: annealing effect

Bismuth oxide thin films have been deposited by room temperature chemical bath deposition (CBD) method and annealed at 623 K in air. They were characterized for structural, surface morphological, optical and electrical properties. From the X-ray diffraction patterns, it was found that after annealing a non-stoichiometric phase, Bi₂O_2.33, was removed and phase pure monoclinic Bi₂O₃ was obtained. Surface morphology of Bi₂O₃ film at lower magnification SEM showed rod-like structure, however, higher magnification showed a rectangular slice-like structure perpendicular to substrate, giving rise to microrods on the surface. The optical studies showed the decrease in band gap by 0.3 eV after annealing. The electrical resistivity variation showed semiconductor behavior and from thermoemf measurements, the electrical conductivity was found to be of n-type.     

Physical properties of ZnS thin films prepared by chemical bath deposition

Zinc sulphide thin films are deposited on SnO₂/glass using the chemical bath deposition technique. X-ray diffraction and atomic force microscopy are used to characterize the structure of the films; the surface composition of the films is studied by Auger electrons spectroscopy, the work function and the photovoltage are investigated by the Kelvin method. Using these techniques, we specify the effect of pH solution and heat treatment in vacuum at 500 °C. The cubic structure corresponding to the (1 1 1) planes of β-ZnS is obtained for pH equal to 10. The work function (Φ_material − Φ_probe) for ZnS deposited at pH 10 is equal to −152 meV. Annealing at 500 °C increases Φ_m (by about 43 meV) and induces the formation of a negative surface barrier. In all cases, Auger spectra indicate that the surface composition of zinc sulphide thin films exhibits the presence of the constituent elements Zn and S as well as C and O as impurity elements.     

Influence of double A1N buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition

<正>In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with double AlN buffer layers.The buffer layer consists of a low-temperature(LT) AlN layer and a high-temperature(HT) AlN layer that are grown at 600℃and 1000℃,respectively.It is observed that the thickness of the LT-AlN layer drastically influences the quality of GaN thin film,and that the optimized 4.25-min-LT-AlN layer minimizes the dislocation density of GaN thin film.The reason for the improved properties is discussed in this paper.