GaAs中碳受主局域振动模的非简谐性对主吸收带的影响

在ＧａＡｓ中碳受主局域振动模主吸收带低能侧,观察到一个吸收边带,其峰频率与局域振动模吸收主带的峰频率之差为３５ｃｍ＾－１。该边带的积分面积随温度变化,并影响主吸收带积分布积的温度关系。该边带可能起因于局域振动模自身的非简谐性。     

注碳GaN的拉曼散射谱研究

本文研究了离子注入碳的GaN材料的Raman光谱。观察到离子注入碳的GaN在800℃退火后其拉曼光谱在1350和1600cm-1处出现两个峰。分析指出它们很可能分别来自GaN的CN和C=C局域伸缩振动。     

An Assessment of the Assignment of Characteristic N-O Vibrations in Aromatic N-Oxides

The use of “characteristic” N-O group frequencies, in characterising metal complexes with aromatic N-oxides is widespread. The most popular assignments of the N-O in-plane and out-of-plane bends of N-oxides are shown to be in error, while the validity of transferring the N-O assignments of pyridine N-oxide to larger aromatic N-oxide systems is cautioned.     

Algebraic Model Applied to Vibrations in the Electronic Ground State of NO2

An algebraic model of boson realization and a corresponding q-deformed model are used to study tile vibrations in the electronic ground state of NO₂. The two models are applied to fit the 142 vibrational band origins below 9000 cm^-1 with the standard deviations 3.23 cm^-1 and 3.12 cm^-1, respectively.     

氧化硅层中的锗纳米晶体团簇量子点

采用氧化和析出的方法在氧化硅中凝聚生成锗纳米晶体量子点结构. 其形成的锗晶体团簇没有突出的棱角和支晶结构，锗晶体团簇的轮廓较圆混，故可以用球形量子点模型来模拟实际的锗晶体团簇. 对比了在长时间退火氧化条件下和在短时间退火用激光照射氧化条件下所生成的锗纳米晶体结构的PL光谱和对应的锗纳米晶体团簇的尺寸分布. 短时间退火氧化条件下生成的锗纳米晶体较小(3.28—3.96nm)，长时间退火用激光照射氧化条件下所生成的锗纳米晶体较大(3.72—4.98nm)；其分布结构显示某些尺寸的锗纳米晶体团簇较稳定，适当的氧化条件可以得到尺寸分布范围较窄的锗纳米晶体团簇. 用量子点受限模型计算了锗纳米晶体团簇的能隙结构，用Monte Carlo方法模拟了PL光谱和对应的锗纳米晶体团簇的尺寸分布，分别与实验结果符合较好. 关键词： 锗晶体团簇 纳米晶体 量子点 激光照射     

AM1 Computed Vibrations in Two C60O Structures

Harmonic vibrational analysis for fully optimized C_s and C_2v structures of C₆₀O has been performed with AM1 quantum-chemical method. The vibrational frequencies, their (partial) symmetry classification and IR intensities are reported, and their relationships to observations discussed.     

Thermal Emission Spectrum of the Cobalt Monobromide Molecule

ABSTRACT

The thermal emission spectrum of the CoBr molecule has been photographed for the first time in the spectral region 4200–6000 Å using the high-temperature excitation technique and the 2-meter plane grating spectrograph (PGS-2). The spectrum has been recorded at a reciprocal linear dispersion of 7.3 Å/mm. About 203 red degraded and line-like bands have been recorded, out of which 172 are entirely new. The observed bands have been classified into 31 systems, of which 23 are entirely new. The vibrational analyses have been carried out using band head measurements and the Deslandre table. The ground state of the CoBr molecule is found to be ³Φ with the vibrational constants 318.3, 329.5, and 332.7 cm^?1.     

地方综合性大学“热学”精品课程建设的探索

精品课程建设是高等学校提高教学质量的重要措施之一,地方综合性大学进行精品课程建设应该依托地方优势、突出地方特点.文章从人才培养目标、教材建设、师资队伍、教学方法和手段等方面对地方综合性大学“热学”精品课程的建设进行了探索和研究.     

Relaxation Times and Population Inversion of Excited States of Arsenic Donors in Germanium

The relaxation times of excited states of arsenic dopant in germanium at cryogenic temperatures T < 15 K have been experimentally studied by the optical pump-probe method using radiation of a free-electron laser. Two variants of the excitation of impurity centers have been used in the experiment: (i) from the 1s(A₁) ground state of the dopant and (ii) from the 1s(T₂) first excited state having a finite thermal population. In the former variant, it has been shown that the decay times of the 2p₀ and 3p_± states are about 0.8 and 0.6 ns, respectively. In the latter variant, a single measurement can simultaneously provide the relaxation times of two 2p_± and 1s(T₂) states about 0.6 and no more than 0.16 ns, respectively. The data obtained have indicated the possibility of forming population inversion and the gain of terahertz radiation at the 2p_± → 1s(T₂) and 2p₀ → 1s(T₂) transitions at the optical excitation of the mentioned impurity centers.

     

干法灰化-原子荧光光谱法测定植物样中痕量锗

锗是对人体有益的重要稀有元素,但锗在植物样中含量很低。目前锗的前处理方法主要采用湿法消解和微波消解两种,以上的前处理方法试剂用量大,称样量小,检出限难以满足植物样中锗的分析要求。氢化物发生-原子荧光光谱法测定锗等易形成共价氢化物的元素相对其他的方法具有明显的优势。为降低测定植物样中锗的检出限,准确测定植物中的锗。实验采用干法灰化法对植物样中锗进行富集,建立了植物样中痕量锗的氢化物发生-原子荧光光谱测定方法。实验了温度对植物样灰化的影响,结果表明,即使温度高达900 ℃也不会造成锗的挥发损失,进一步试验表明在600 ℃灼烧4 h,即可将植物样灰化完全。实验了灰化后样品的消解方法,确定了灰化后样品采用硝酸、氢氟酸和硫酸进行分解。采用大称样量高温灰化减少了试剂用量,有效降低了方法检出限,改善了方法精密度。方法检出限达到0.27 ng·g-1,方法精密度(RSD)在3.99%～6.81%,经生物国家一级标准物质验证方法准确可靠。     

一维双原子链中杂质的局域振动

讨论了一维双原子链中杂质的局域振动，对杂质原子替代大原子和替代小原子的情况进行了分析，分别得到这两种情况下的高频模和隙模的频率。     

三模共振光学参变振荡腔中热效应与热自锁定的实验研究

通过在压电陶瓷上加不同扫描速度的三角波电压,对光学参变振荡腔进行腔长扫描,发现内腔非线性晶体的热效应会严重影响共振峰值功率,从而可能用以建立光学参变振荡腔频率的热自锁定,对热效应进行了细致的实验观察并对实验现象作了合理的分析。     

In Situ Transmission Electron Microscopy Observation of Melted Germanium Encapsulated in Multilayer Graphene

Germanene is a two-dimensional germanium (Ge) analogous of graphene, and its unique topological properties are expected to make it a material for next-generation electronics. However, no germanene electronic devices have yet been reported. One of the reasons for this is that germanene is easily oxidized in air due to its lack of chemical stability. Therefore, growing germanene at solid interfaces where it is not oxidized is one of the key steps for realizing electronic devices based on germanene. In this study, the behavior of Ge at the solid interface at high temperatures is observed by transmission electron microscopy (TEM). To achieve such in situ heating TEM observation, this work fabricates a graphene/Ge/graphene encapsulated structure. In situ heating TEM experiments reveal that Ge like droplets move and coalesce with other Ge droplets, indicating that Ge remains as a liquid phase between graphene layers at temperatures higher than the Ge melting point. It is also observed that Ge droplets incorporate the surrounding amorphous Ge as Ge nuclei, thereby increasing its size (domain growth). These results indicate that Ge crystals can be grown at the interface of van der Waals materials, which will be important for future germanene growth at solid interfaces.     

局域热源对磁岛热输运的影响

研究托卡马克等离子体磁岛内的热输运行为.应用局域高斯热源对磁岛加热来模拟电子回旋共振加热.对同时存在背景热源与局域高斯热源的情况,观察局域高斯热源对径向电子温度分布及热输运产生的变化,分析局域高斯热源对温度扰动及磁岛约束能量的影响.     

超薄氢化非晶锗膜的结构与光电性质

通过PECVD制备出了不同厚度的a-Ge∶H膜,采用Raman光谱对样品进行了结构表征,由椭圆偏振光谱仪得到样品的厚度和光学常数,并计算了样品的光学带隙。由变温电导率分析了薄膜的电学输运性质,结果表明,载流子的传输机制为扩展态电导。进而利用变温PL谱研究了薄膜的发光性能,发现其发光峰在1.63 μm处;随着膜厚的减小,峰位和峰形都有改变,且强度明显提高。进一步分析发现,随着膜厚的减小非辐射复合跃迁的激活能增大,从而导致辐射复合过程增强。     

突起物及其干扰区热环境影响范围分析

针对升力体外形飞行器局部构件干扰流动及热环境影响,采用理论分析、数值模拟、工程半经验模型及实验数据分析相结合,研究高速流动条件下平板表面突起物干扰区气动加热影响.对比分析不同外形特征下突起物对流场结构的影响表明:干扰区热环境分布与流动结构直接相关,压力比拟方法可在局部区域可靠预测热流分布;高台类突起物干扰区范围和热环境敏感依赖于其有效宽度,而低台类突起物干扰区范围和热环境则主要依赖于高度变化;方形头构件与圆形头构件对称面干扰区范围相差1.414倍(湍流/层流均成立);后掠角存在对干扰区范围影响显著,给出后掠角对干扰区的影响关系式.研究结果可方便地用于飞行器热环境预测中,为其提供技术支撑.     

Germanium – the superior dopant in n‐type GaN

We present an experimental study about the influence of Si and Ge doping in GaN with focus on the occurring strain levels and overall crystalline quality. Extremely high quality samples were examined by means of Raman spectroscopy, demonstrating effective, n‐type doping concentrations up to the 5 × 10¹⁹ cm^–3 regime. By studying the full width at half maximum (FWHM) of the E₂(high) Raman mode with rising doping concentration, Ge is approved as the by far superior dopant if compared to Si. Even elevated nominal Ge concentrations yield corresponding FWHM values of just 3 cm^–1, a most competitive value even for bare bulk GaN samples. At the same time, the biaxial, compressive stress that is introduced by such high Ge doping amounts to just 0.2 GPa, in clear contrast to the particular case of silicon. Here, even moderate doping levels lead to tensile stress up to 1 GPa and consequently to a serious degeneration of the overall crystal quality as approved by our Raman analysis. Additionally, the examined high doping concentrations enable the observation of longitudinal optical phonon plasmon (LPP) modes in the Raman spectra, which serve as a direct tool for the determination of the effective doping concentration. A careful analysis of the LPP coupling at cryogenic and room temperature yields within the error interval identical free carrier concentrations in all germanium doped samples, pointing towards an energetically shallow nature of the dopant. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)