To the theory of current transport in the mechanically controllable break junctions

The transport mechanisms for metal–molecule–metal junction after break are analyzed. Theoretical expression for the threshold voltage for transmission from the direct tunneling current to the Fowler–Nordheim tunneling is obtained and analyzed. It is show that threshold voltage depends on the electrode metal work function and displacement. With the increase in displacement the threshold voltage quickly decreases. Differential resistances for the low and high voltage modes increase with increasing in the displacement, and in the Fowler–Nordheim tunneling mode the differential resistance increases when voltage is decrease. It is shown that for the cases commonly used metals (Ag, Au, Pt) the threshold voltage is linearly dependent on the work function of metals.     

Theoretical study of the effect of temperature differential and ionizing radiation on the current–voltage characteristics of HEM transistors

Requirements to the modeling of the effects of temperature differential and ionizing radiation on the current–voltage characteristics of high electron mobility transistors (HEMTs) were formulated. The results of modeling of the effects of temperature differential on the current–voltage characteristics of HEMTs were described. The results of analysis of the effects of ionizing radiation on the current–voltage characteristics of HEMTs were given. The results of modeling of the effects of ionizing radiation on the current–voltage characteristics of HEMTs were presented.     

An experimental investigation on corona quenching

Current–voltage characteristics of a wire-and-tube electrostatic precipitator were measured under conditions of corona quenching. It was found that corona quenching is associated with an increase or decrease of the corona onset voltage (depending on the discharge electrode diameter) and with a strong deformation of the current–voltage characteristic for voltages close to the corona onset voltage. The current state of knowledge, describing corona quenching as a simple shift of the current–voltage characteristic to higher voltages, apparently goes back to measurements of less resolution. Possible mechanisms leading to an understanding of the newly observed phenomena are discussed.     

Synthesis and characterization of DSSC by using Pt nano-counter electrode: photosensor applications

Pt electrode prepared by chemical method has been employed as counter electrode in dye-sensitized solar cell. TiO₂ nanomaterial was deposited on fluorine-doped tin oxide substrate to be used as photoanode. Structure of the TiO₂ and Pt films was investigated by atomic force microscope. The effect of illumination intensity on the photovoltaic parameters such as open circuit voltage, short circuit current density, output power, fill factor and efficiency of these cells was investigated in the range 2.5–130 mW/cm^?2. The cell efficiency is stable above 70 mW/cm². The fill factor is almost constant all over the studied range of illumination intensity. Impedance spectroscopy of the studied device as the summary measurements of the capacitance–voltage, conductance–voltage and series resistance–voltage characteristics were investigated in a wide range of frequencies (5 kHz–1 MHz). At low frequencies, the capacitance has positive values with peak around the origin due to the interfaces. At 200 and 300 kHz, the capacitance is inverted to negative with further increasing of the positive biasing voltage. Above 400 kHz, C–V profile shows complete negative behavior. Also, the impedance–voltage and phase–voltage characteristics were investigated. This cell shows a new promising device for photosensor applications due to high sensitivity in low and high illuminations.     

Accurate AC/DC voltage measurements using electrostatic comparator

The electrostatic AC-DC voltage comparator for precise voltage measurement in voltage range of 100–1000 V and frequency range of 20–100,000 Hz was designed. The equality of AC and DC voltages transforms into horizontal positioning of the beam, which is registered by two photoelectric transducers. DC voltage was measured by voltage divider, standard cell and low-voltage comparator. The construction, main characteristics, and sources of errors are described. The comparison error has been determined as having the value of 0.003% at the voltage of 100 V and the value of 0.0009% at the voltage of 1000 V.     

Optical and electrical characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar/phototransistors (CEHBTs/CEHPTs)

We report on new InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar and phototransistors (CEHBTs/CEHPTs) with a low turn-on voltage. The composite emitter comprised of the digital graded superlattice emitter and the InGaP sub-emitter is used to smooth out potential spike associated with the emitter–base heterojunction and to obtain a low emitter–base turn-on voltage. A fabricated CEHBT exhibits a small offset voltage of 55 mV and a low turn-on voltage of 0.83 V with a dc current gain as high as 150. In case of a CEHPT’s collector–emitter characteristics with base floating, optical gains increase with increasing input optical power. Furthermore, the collector current saturation voltage is small due to a low turn-on voltage. We obtain an optical gain larger than 6.83 with a collector current saturation voltage smaller than 0.5 V. On the other hand, performance results of a CEHPT with two- and three-terminal configuration were investigated and compared.     

Comprehensive study of a 4H–SiC MES–MOSFET

In this paper, we studied the enhancement of the breakdown voltage in the 4H–SiC MESFET–MOSFET (MES–MOSFET) structure which we have proposed in our previous work. We compared this structure with Conventional Bulk-MOSFET (CB-MOSFET) and Field plated Conventional Bulk-MOSFET (FCB-MOSFET) structures. The 4H–SiC MES–MOSFET structure consists of two additional schottky buried gates which behave like a Metal on Semiconductor (MES) at the interface of the active region and substrate. The motivation for this structure was to enhance the breakdown voltage by introducing a new technique of utilizing the reduced surface field (RESURF) concept. In our comparison and investigation we used a two-dimensional device simulator. Our simulation results show that the breakdown voltage of the proposed structure is 3.7 and 2.9 times larger than CB-MOSFET and FCB-MOSFET structures, respectively. We also showed that the threshold voltage and the slope of drain current (I_D) as a function of drain–source voltage (V_DS) for all the structures is the same.     

Photo-induced charge transport in SiO2films containing Si nanocrystals

Photo-induced charge transport is reported in metal–insulator–semiconductor structures containing Si nanocrystals produced by ion implantion and annealing. Successive shifts in current–voltage (I–V) and capacitance–voltage (C–V) curves are shown to be induced by ultra-violet (UV) light exposure under no bias. These shifts are shown to be enhanced by the application of a negative bias voltage during illumination. The application of a positive bias voltage during illumination is shown to reverse the direction of the shifts in both the I–V and C–V curves. This behaviour can be explained by charging of the nanocrystals induced by photoionization of electrons and charge movements in the insulator layer.     

Synthesis,electrical properties and transport mechanisms of thermally vacuum evaporated CdTe nanocrystalline thin films

A stoichiometry CdTe nano-structured powder was synthesized by chemical process. Thin films of different thicknesses (40, 60, and 100 nm) of CdTe were prepared by thermal evaporation method onto silicon substrates. Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of CdTe nanocrystalline thin films deposited on p-Si as heterojunction have been investigated. At low voltages, current in the forward direction was found to obey the diode equation and the conduction was controlled by thermionic emission mechanism. Also, various electrical parameters were determined from the I–V and C–V analysis. The thickness dependence of the obtained capacitance–voltage (C–V) characteristics was also considered.     

Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric

The effect of high overdrive voltage on the positive bias temperature instability(PBTI)trapping behavior is investigated for GaN metal–insulator–semiconductor high electron mobility transistor(MIS-HEMT)with LPCVD-SiNx gate dielectric.A higher overdrive voltage is more effective to accelerate the electrons trapping process,resulting in a unique trapping behavior,i.e.,a larger threshold voltage shift with a weaker time dependence and a weaker temperature dependence.Combining the degradation of electrical parameters with the frequency–conductance measurements,the unique trapping behavior is ascribed to the defect energy profile inside the gate dielectric changing with stress time,new interface/border traps with a broad distribution above the channel Fermi level are introduced by high overdrive voltage.     

A simple method of extracting the polarization charge density in the A1GaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics

An Ni Schottky contact on the AlGaN/GaN heterostructure is fabricated. The flat-band voltage for the Schottky contact on the AlGaN/GaN heterostructure is obtained from the forward current-voltage characteristics. With the measured capacitance-voltage curve and the flat-band voltage, the polarization charge density in the AlGaN/GaN heterostructure is investigated, and a simple formula for calculating the polarization charge density is obtained and analyzed. With the approach described in this paper, the obtained polarization charge density agrees well with the one calculated by self-consistently solving Schrodinger’s and Poisson’s equations.     

Measurement and simulation of partial discharge in oil-paper insulation under the combined AC–DC voltage

Depending on unique operation characteristics for voltage applied on valve side winding of the converter transformers, it is extraordinarily significant to study the partial discharge (PD) behavior with oil-paper insulation under combined AC–DC voltage. Therefore, this paper investigated PD inception characteristics by pulse current methods with needle-plate electrode system under combined AC–DC voltage. Furthermore, 3D electric field distributions versus combined AC–DC voltage in different ratios were calculated by Finite Element Analysis (FEA). An experimental conclusion was drew that AC partial discharge inception voltage (PDIV) in pure oil would decrease linearly with the DC component increasing but the inception voltage with oil-paper insulation appeared to be independent of DC voltage and dependent of AC voltage. And 3D electric field distribution deduced from simulation provided a supplementary proof on the experimental results. Moreover, high speed photography was used to capture emitted light produced by discharge, estimate streamer velocity (1.8 km/s) and record streamer initiation and propagation process in oil gap. Previous studies have shown that the prebreakdown phenomena involving the generation and propagation of vapor channels through the oil could be divided into a three-stage process.     

Experimental observation of dust circulation in unmagnetized cogenerated dusty plasma

The vortex motion of a dust cloud was experimentally observed in unmagnetized cogenerated dusty plasma in different experimental parameters. Particle image velocimetry analysis demonstrated that several vortex zones exist in the dust cloud at relatively low pressures (0.06 mbar (or 6 Pa)–0.08 mbar (or 8 Pa)) and low discharge voltages (peak‐to‐peak voltage 540–560 V), whereas in relatively high pressure (0.4 mbar (or 40 Pa)–0.7 mbar (or 70 Pa)) and high discharge voltage (peak‐to‐peak voltage 690–740 V), dust vortices formed in dense dust cloud with background plasma fluctuation.     

Photovoltage analysis of a heterojunction solar cell

According to the p-n junction model of Shockley,the relationship between the equilibrium carrier concentrations of n-type and p-type semiconductors on the edges of the depletion region of a p-n junction solar cell is analysed.The calculation results show that the photovoltage can exceed the built-in voltage for a special kind of heterojunction solar cell.When the photovoltage exceeds the built-in voltage under illumination,the dark current and the photocurrent are impeded by the peak of voltage barrier at the interface and the expression of the total I-V characteristic is given.     

The influences of the second harmonics together with the asymmetries of junctions on the voltage–current characteristics of high TC DC SQUIDs

We consider a superconducting quantum interference device having two arbitrary different over damped junctions transporting different currents. By replacing the governed two-dimensional Fokker–Planck equation with two one-dimensional equations, two density probability currents are appeared which determine the statistical average of the time-averaged total voltage across the device. To obtain the density probability currents, two coupled integral equations are introduced. These equations together with two other equations coming from normalizing conditions, found one generalized formulation for the voltage–current characteristics of the device. Based on that, the voltage–current characteristics of large inductance asymmetric DC SQUIDs having first and second harmonics in their current-phase relations are obtained and some predictions are illustrated.     

Structure and electrochemical performance of LiCoO2 cathode material in different voltage ranges

LiCoO₂ sample prepared by high-temperature solid state calcination shows a typical hexagonal structure with a single phase and fine particle size distribution. The high-voltage electrolyte with additive fluoroethylene carbonate (FEC) has been used. Electrochemical results show that the initial discharge capacities of the prepared LiCoO₂ cathode are 157.7, 169.5, 191.0, and 217.5 mAh g^?1 in the voltage ranges of 3.0–4.3, 3.0–4.4, 3.0–4.5, and 3.0–4.6 V, respectively. The capacity increases, while the initial coulombic efficiency and capacity retention decrease with increasing the charge cutoff voltage. The capacity retention is only 10.4 % after 200 cycles at 1C rate in the voltage range of 3.0–4.6 V. X-ray diffraction measurements confirm structural changes of the layered material in the different voltage ranges. A phase transition from the O3 to the H1-3 phase can be observed when LiCoO₂ is charged above 4.5 V. The AC impedance analysis indicates that the resistances (R _(sf+b), R _ct) of the prepared LiCoO₂ rapidly increase when the cell is charged to higher voltage. The amount of dissolved Co into the electrolyte also greatly increases with increasing the charge cutoff voltage.     

Electrical bistability of CdS nanoparticles sandwiched between aluminum tris (8-hydroxyquinoline) layers

We report the electrical bistability of cadmium sulfide (CdS) nanoparticles (NPs) capped by dodecanethiol, which are sandwiched between aluminum tris (8-hydroxyquinoline) (Alq₃) layers. The current density–voltage (J–V) characteristics of the device with Al/Alq₃/CdS NPs/Alq₃/Al structures show the high- and low-conducting state at the same voltage, and the two states are reproducible by applying different negative sweeping voltages. The Ohmic model and the space–charge limited model are proposed and supported by the current density–voltage results, which give a possible transport mechanism for the electrical bistability of our devices.     

Landauer–Datta–Lundstrom model for terahertz transistor amplifier based on graphene

A transistor has been considered in the form of three electrodes connected by graphene ribbons or by metal quantum wires (nanowires) that operate on the principle of the current control by the changing voltage at the central electrode (gate). The analysis has been carried out according to the Landauer–Datta–Lundstrom model in equilibrium approximation for electrodes while fixing their potentials. We have obtained linear models and nonlinear terms in the determining current, and calculated the nonlinear current–voltage performances of graphene nanoribbons.     

Experimental study of V–I characteristics of wire–plate electrostatic precipitators under clean air conditions

In this paper a laboratory-scale model for prediction of the voltage–current characteristics of wire–plate electrostatic precipitators under clean air conditions is presented and experimentally validated. The model investigates the effect of electrode configurations, wire diameter, spacing between wire electrodes, number of discharge wires and distance between collecting plates that on voltage–current characteristic of wire–plate electrostatic precipitators. Also, this paper presents a simulation model, based on the Finite Difference Method (FDM), to simulate electric conditions of wire–plate electrostatic precipitators under clean air conditions. The experimental results of some models are compared with those obtained from the simulation models.