以石墨为造孔剂多孔Al2O3陶瓷体系中晶粒生长的研究

针对多孔Al2O3陶瓷两相体系,研究了烧结温度、保温时间和石墨含量对陶瓷气孔率、晶粒尺寸的影响.结果表明:随着烧结温度的升高和保温时间的延长,晶粒尺寸增大而气孔率下降;随着石墨含量的增加,气孔率明显提高而晶粒尺寸变化不明显.在此基础上,通过进一步拟合晶粒生长和时间的双对数线性关系,得出在1300 ℃时多孔Al2O3陶瓷的晶粒生长指数为2.95,与理论值基本吻合.     

利用水热沉淀法合成的YAG粉体制备多孔陶瓷及性能研究

YAG具有许多独特的性能,应用非常广泛.利用水热沉淀法制备超细YAG粉体,研究合成工艺对粉体形貌的影响,并采用合成的超细YAG粉体制备YAG多孔陶瓷,结果显示:盐碱摩尔比Y3+:OH-=1:8时,能够得到形貌比较均匀的颗粒,当继续增大盐碱摩尔比时,得到的粉体形貌没明显变化.反应时间越长,颗粒尺寸越粗大.Y3+的浓度越小,颗粒尺寸越细小.通过实验,在反应温度为200 ℃、反应时间为2 d和盐碱摩尔比为1:8的条件下,所得到棒状颗粒为多晶体结构,它的直径大约是150 nm,长度大约为4000 nm,通过XRD检测,粉体纯度较高.随着陶瓷坯体烧结温度的提升,YAG多孔陶瓷气孔率呈现下降趋势,而抗压强度随之升高.结合气孔率、抗压强度和显微孔结构综合考虑,利用水热沉淀法合成的棒状超细YAG粉体烧结制备YAG多孔陶瓷的烧结温度确定为1500 ℃较为适宜.     

低品位非金属矿制备多孔陶瓷及其吸音性能研究

以岩浆土、凝灰岩和玻璃粉为主要原料,以碳化硅和稻草粉分别为发泡剂和造孔剂制备多孔吸音陶瓷.结合原料热分析结果,运用单因素研究法考查了烧结温度、保温时间、造孔剂用量、发泡剂用量、样品厚度及显气孔率和孔径对多孔陶瓷材料吸音性能的影响.采用XRD和超景深显微技术对材料的晶相结构和形貌进行表征.结果表明,在烧结温度1150℃、保温时间50 min、发泡剂和造孔剂用量分别为原料质量的1.4;和6;、样品厚度30 mm时制备的材料性能最优,即在200~4000 Hz下材料平均吸音系数为0.34;此外,随着样品厚度的增加,第一吸收峰频率由高频向低频方向移动.     

利用高铝粉煤灰制备多孔陶瓷工艺研究

以脱硅高铝粉煤灰为主要原料、石墨为造孔剂制备多孔陶瓷.利用X射线衍射仪和扫描电子显微镜分析多孔陶瓷的物相组成和微观结构,万能试验机测试抗弯强度,阿基米德排水法测定显气孔率和体积密度,采用渗透通量评价其过滤性能.研究结果表明:随着烧结温度的升高,多孔陶瓷的莫来石含量、体积密度和抗弯强度逐步增大,刚玉和石英的含量、显气孔率、吸水率和对水的渗透通量逐渐减小.随着石墨添加量的增加,多孔陶瓷的物相组成变化不大,体积密度和抗弯强度逐步降低,显气孔率、吸水率和对水的渗透通量相应增加.添加30wt;石墨、1450℃烧结的多孔陶瓷,抗弯强度为9 MPa,显气孔率为48.28;,大气压下,对水的渗透通量达到714 L·m-2·h-1.     

过滤用镁渣多孔陶瓷的制备与渗透性能

本文以镁渣,粉煤灰等为原料制备了镁渣基多孔陶瓷,评价了多孔陶瓷的孔隙参数,烧结性能,力学性能,渗透性能等,观察了多孔陶瓷的微观结构,研究了烧结温度、成型压力、原料配比和添加剂等因素等对多孔陶瓷理化性能的影响.结果表明,烧结温度1150℃,保温4 h可制得固废掺比为90;的镁渣基多孔陶瓷,成型压力对多孔陶瓷的气孔率、吸水率和体积密度具有较大影响.镁渣和粉煤灰的配比为7:2时,多孔陶瓷产品的综合性能较好.添加电石渣和碳粉为造孔剂能够匀化气孔分布,细化孔径,提高多孔陶瓷的气孔率和气体过滤性能.     

叔丁醇基凝胶注模成型制备ZTA多孔陶瓷

采用叔丁醇基凝胶注模成型工艺,以丙烯酰胺为单体制备了ZTA多孔陶瓷.优化了固含量、预混液浓度、引发剂用量和固化温度等成型工艺参数.分析了烧结温度和保温时间对多孔陶瓷气孔率及孔径分布的影响.研究发现固含量为10vol;、预混液浓度为15wt;、引发剂用量为20wt;、固化温度为40℃,在1500c℃条件下保温2h烧结得到的ZTA多孔陶瓷气孔率可达59.05;,最可及孔径为0.72 μm,孔径分布在0.40 ～5.00μm的气孔占总气孔的87.22;,压缩强度达到56.09MPa.     

La2O3对氧化铝/高岭土复合定向多孔陶瓷性能的影响

以微米级α-Al2O3、陶瓷水体分散剂为主要原料,以La2O3-水洗高岭土为烧结助剂,采用冰模板法制备了一种具有高孔隙率和较高抗压强度的氧化铝/高岭土复合定向多孔陶瓷.研究了不同添加量的La2O3对多孔陶瓷的显气孔率、体积密度、抗压强度和微观形貌的影响.结果表明:添加适量的稀土La2O3能降低多孔陶瓷烧结温度、提高体积密度和抗压强度.通过高能机械球磨法添加La2O3,在1350℃烧结制备的多孔材料样品显气孔率为82;,样品的抗压强度达到10 MPa以上.当La2O3加入量达到3;时,可使多孔陶瓷抗压强度提高到15.2 MPa,较不掺加La2O3提高了约53;.     

高温烟气过滤陶瓷的制备与性能研究

本论文以堇青石为过滤陶瓷骨料,以高岭土、钾长石、锂辉石为结合剂,以木炭粉为造孔剂,通过半干压成型工艺成型,研制了高温烟气过滤陶瓷.详细研究了结合剂、造孔剂添加量以及成型压力、烧成温度对高温烟气过滤陶瓷的体积密度、显气孔率、抗压强度等性能的影响,并对原料配方进行了优化,优化配方为:堇青石75wt;、结合剂25wt;、炭粉造孔剂50wt;、三聚磷酸钠0.5wt;.研究结果表明:试样的显气孔率随造孔剂添加量的增加而升高、随结合剂添加量的增加而减小;抗压强度和烧结密度随造孔剂添加量的增加而减小、随结合剂添加量的增加而升高;随成型压力的增大,过滤陶瓷的显气孔率呈逐渐减小的趋势,抗压强度则不断增大.随烧成温度的升高,过滤陶瓷的显气孔率呈先升高后减小的趋势,而抗压强度则逐渐增大.     

商洛钒尾矿烧制轻质高强陶粒的研究

采用80wt;商洛钒尾矿为主要原料,加入钾长石、粘土为辅助原料,以SiC为发泡剂,制备性能优异的轻质高强陶瓷颗粒.采用单因素变量分析法研究钒尾矿含量、SiC添加量、烧成温度和保温时间对陶粒结构及性能的影响.研究结果表明:随着发泡剂SiC含量的增加、烧成温度的提高和保温时间的延长,陶粒的堆积密度和筒压强度均降低,吸水率均升高.最终加入2wt;SiC为发泡剂,在1125℃下保温30min制得堆积密度631kg/m3,筒压强度9.1MPa,吸水率3.1;的轻质高强陶瓷颗粒.     

Al2O3/Y2O3复合助剂对碳化硅蜂窝陶瓷烧结性能的影响研究

以碳化硅为主要原料,以羟丙基甲基纤维素(HPMC)为粘结剂,以Al2O3和Y2O3作为复合烧结助剂,采用挤出成型工艺制备出碳化硅多孔蜂窝陶瓷.探究了复合助剂Al2O3/Y2O3的加入量对蜂窝陶瓷物相组成和微观形貌的影响;研究了烧结温度对碳化硅陶瓷物相、微观形貌以及孔隙率、线收缩率、体积密度、抗压强度的影响规律.结果表明:Al2O3/Y2O3复合助剂的加入量增大和烧结温度的提高,陶瓷液相量增多;在钇铝石榴石(YAG)的共晶点1760 ℃附近,更易于析出结晶形成YAG相.烧结温度升高,陶瓷收缩率增大;体积密度和抗压强随烧结温度变化规律接近;体积密度和抗压强度在1750℃达到最大值分别为1.8 g/cm3和14.09 MPa.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.