Investigation of molar concentration effect on structural,optical, electrical,and photovoltaic properties of spray‐coated Cu2O thin films

High quality copper oxide thin films were prepared by nebulizer spray pyrolysis technique using different concentrations of copper precursor solution. Concentration‐dependent structural, morphological, optical, and electrical properties of the prepared films are discussed. X‐ray diffraction studies done for the samples confirmed that the deposited films are in Cu₂O phase with polycrystalline cubic structure. Atomic force microscopy analysis revealed that all the films are composed of nano sheet shaped grains covering the substrate surface. Optical studies done on the samples showed band gap values 2.42, 2.31, and 2.02 eV for the solution concentration 0.01, 0.05, and 0.1 M, respectively. Photoluminescence spectral analysis showed the emission band at 620 nm confirming the formation of cuprous oxide. Electrical analysis of the films showed p‐type conductivity with a low resistivity 2.19 × 10² Ω.cm and high carrier concentration 16.76 × 10 ¹⁵ cm⁻³ for the molar concentration 0.1 M. In this work, Cu₂O/ZnO heterojunctions were also prepared, and solar cell properties were studied; they were found to show increased open circuit voltage and short circuit current for higher copper concentration.     

Effect of Annealing on the Electrical Properties of CuxS Thin Films

Copper sulphide CuS was deposited on three substrates; glass, Indium Tin Oxide (ITO) and Ti by using spray pyrolysis deposition (SPD). After depositing CuS thin films on the substrates at 200 °C, they were annealed at 50, 100, 150, and 200 °C for 1 hour. Structural measurements revealed covellite CuS and chalcocite Cu₂S phases for thin films before and after annealing at 200 °C with changes in intensities, and only covellite CuS phase for thin films after annealing at 50, 100, and 150 °C. Morphological characteristics show hexagonal-cubic crystals for the CuS thin film deposited on glass substrate and plates structures for films deposited on ITO and Ti substrates before annealing, these crystals became bigger in size and there were be oxidation and some agglomerations in some regions with formation of plates for CuS on glass substrate after annealing at 200 °C. For Hall Effect measurements, thin films sheet resistivity and mobility increased after annealing while the carrier concentration decreased. Generally, the thin film deposited on ITO substrate had the lowest resistivity and the highest carrier concentration before and after annealing. The thin film deposited on Ti substrate had the highest mobility before and after annealing, which makes it the best thin film for device performance. The objective of this research is to show the improvement of thin films electrical properties especially the mobility after annealing those thin films.     

Synthesis of Bi/Sr doped zinc sulphide by spray pyrolysis technique: Effects of doping tempertures on solar cell application

With the aim of determining the best synthesizing substrate temperature that will improve the optical properties of Bi/Sr doped ZnS thin film, spray coated Bi/Sr doped ZnS thin films were deposited at a varying glass substrate temperature of 200 °C–350 °C using an interval of 50 °C. A constant volume of 40 ml of precursor solution was created by adding 10 ml of each of the following solutions: 0.045 M solution of zinc acetate dihydrate C4H6O4Zn.2H2, 0.1 M solution of thioacetamide CH3CSNH2, 0.02 M solution of bismuth nitrate Bi(NO3)3.5H2O, and 0.07 M solution of Strontium hydroxide Sr(OH).₂. UV–Visible Spectrophotometry, scanning electron microscope (SEM), EDX, X-ray diffraction (XRD), photoluminescence, and Fourier transform infrared (FTIR) were all used to investigate the samples. 53.84 and 193.26% increment in carrier concentration and mobility, a 36.36% and 17.77% reduction in resistivity, and a band gap were obtained at a doping temperature of 300 °C. An open-circuit voltage (Voc) of 0.30 V and a power conversion efficiency of 0.58% were achieved. It was established that a doping temperature of 300 °C on Bi/Sr doped ZnS thin films can be used to lower the band gap of ZnS for solar cell applications.     

The morphological,optical and electrical properties of SnO2:F thin films prepared by spray pyrolysis

Combining the spray pyrolysis and the sol–gel techniques gives the possibility to produce Fluorine doped Tin oxide (SnO₂:F) thin films. Transparent conducting SnO₂:F thin films have been deposited on glass substrates by the spray pyrolysis technique. This technique for the fabrication of SnO₂:F filmsby combining sol–gel process and the spray pyrolysis technique ispresented in this paper. The Sol–gel precursors have been successfully prepared using SnCl₂·5H₂O and (Ac)F₃. The structural, electrical, and optical properties of these films were investigated. The high resolution transmission electron microscopy (HRTEM) and selected area diffraction (SAD) patterns of SnO₂:F films show that the gel films lead to a tetragonal structure. The X‐ray diffraction pattern of the films deposited at substrate temperature 530° , the orientation of the films was predominantly [110]. In addition, the surface chemical components were also examined by X‐ray photoelectron spectroscopy (XPS) showing the SnO₂:F deposited with the atomic concentration ratios Sn/F 1.82:1. The minimum sheet resistance was 50 Ω and average transmission in the visible wavelength range of 300 to 800 nm was 87.25%. Copyright © 2008 John Wiley & Sons, Ltd.     

Optimization of erbium percentage molarity on cobalt selenide semiconductor material via spray pyrolysis deposition technique for photovoltaic application

The spray pyrolysis approach was used to successfully synthesize cobalt selenide (CoSe) and cobalt selenide doped erbium (CoSe/Er) materials. The XRD patterns of cobalt selenide (CoSe) and cobalt selenide doped erbium (CoSe/Er) semiconductor materials show strong crystalline peaks at 2θ = 16.03°, 20.29°, 23.89°, 31.92°, and 41.32°, corresponding to diffraction planes (110), (111), (200), (203), and (220). The formation of cobalt selenide material can be determined from the X-ray spectrum angle 16.03°, which corresponds to diffraction plane (110) while the remaining 2 theta angles and diffraction peak demonstrate the formation of cobalt selenide doped erbium. The average size of the crystallites was calculated to be 55.08 nm. Surface morphology analyses indicated homogenous flat nanocrystals at low doping concentrations and massive nanocrystal clusters as doping concentrations increased. The transmittance spectra show that the transmittance of both the CoSe and the Er-doped CoSe thin films significantly increases below 400 nm. The estimated direct bandgap, which is in the 1.53–2.01 eV range and rises with concentration due to a strong quantum effect, makes it appropriate for use in photovoltaic cells.     

Preparation of nitrogen doped zinc oxide nanoparticles and thin films by colloidal route and low temperature nitridation process

Nitrogen doped zinc oxide (ZnO) nanoparticles have been synthesized using a colloidal route and low temperature nitridation process. Based on these results, 200 nm thick transparent ZnO thin films have been prepared by dip-coating on SiO₂ substrate from a ZnO colloidal solution. Zinc peroxide (ZnO₂) thin film was then obtained after the chemical conversion of a ZnO colloidal thin film by H₂O₂ solution. Finally, a nitrogen doped ZnO nanocrystalline thin film (ZnO:N) was obtained by ammonolysis at 250 °C. All the films have been characterized by scanning electron microscopy, X-ray diffraction, X-Ray photoelectron spectroscopy and UV–Visible transmittance spectroscopy.     

Cu-particle-dispersed (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript> composite thin films derived from sol–gel processing

Sol–gel processing of Cu-particle-dispersed (K_0.5Na_0.5)NbO₃ (Cu/KNN) thin films was studied in an attempt to develop a method producing piezoelectric composite films with good mechanical performance. The Cu/KNN films were prepared via crystallization annealing at 650–750 °C for 1 min in air, followed by reduction annealing at 400–500 °C for 1–2 h in a 5% H₂ and 95% Ar gas mixture. The resultant composite films consisted of perovskite KNN, metallic Cu, and Cu₄O₃. This suggests that the decomposition of Cu sources takes two different ways in this study. The Cu/KNN composite films containing Cu₄O₃ phases were produced by the crystallization annealing at 700 °C for 1 min followed by the reduction annealing at 500 °C for 1 h. Surface morphology observations reveal that these films have dense KNN matrix with a grain size of ~200 nm and uniformly dispersed Cu or Cu₄O₃ particles with a size of <500 nm.     

Enhancement of the power conversion efficiency for inverted polymer solar cells due to an embedded CuxO interlayer formed by using Cu(I) acetate and Cu(II) acetate

Structural, optical, and photovoltaic properties of copper-oxide (Cu_xO) thin films formed by using a sol–gel method were investigated. X-ray diffraction patterns showed that the Cu_xO films prepared utilizing Cu(I) acetate or Cu(II) acetate and annealed under ambient atmosphere at various temperatures were polycrystalline with two phases, Cu₂O and Cu₆₄O. Transmittance spectra showed that the energy band gaps of the Cu_xO thin films formed by using Cu(II) acetate were smaller than those formed by using Cu(I) acetate. Current–voltage results showed that the power conversion efficiencies of the inverted polymer solar cells utilizing the Cu_xO interlayer formed by using Cu(II) acetate were better than those utilizing the Cu_xO interlayer formed by using Cu(I) acetate due to the multiple band gaps of the Cu(II) acetate.     

X-ray photoelectron spectroscopy-based valence band spectra of passive films on titanium

Titanium (Ti) is always covered by thin passive films. Thus, valence band (VB) spectra, obtained using X-ray photoelectron spectroscopy (XPS), are superpositions of the VB spectra of passive films and that of the metallic Ti substrate. In this study, to obtain the VB spectra only of passive films, angular resolution (for eliminating the substrate Ti contribution) and argon ion sputtering (for removing passive films) were used along with XPS. The passive film on Ti was determined to consist of a very thin TiO₂layer with small amounts of Ti₂O₃, TiO, hydroxyl groups, and water with a thickness of 5.9 nm. The VB spectra of Ti were deconvoluted into four peak components: a peak at ~1 eV, attributed to the Ti metal substrate; a broad peak in the 3–10 eV range, mainly attributed to O 2p (~6 eV) and O 2p-Ti 3d hybridized states (~8 eV), owing to the π (non-bonding) and σ (bonding) orbitals in the passive oxide film; and a peak at ~13 eV, attributed to the 3σ orbital of O 2p as OH⁻or H₂O. The VB region spectrum between approximately 3 and 14 eV from Ti is originating from the passive film on Ti. In particular, characterization of VB spectrum obtained with a takeoff angle of less than 24° is effective to obtain VB spectrum only from the passive film on Ti. The property as n-type semiconductor of the passive film on Ti is probably higher than that of rutile TiO₂ceramics.     

Structure and multiferroic properties of Bi<Subscript>5</Subscript>FeTi<Subscript>3</Subscript>O<Subscript>15</Subscript> thin films prepared by the sol–gel method

The Bi₅FeTi₃O₁₅ (BFTO) films of layered structure have been fabricated on Pt/Ti/SiO₂/Si substrates by the sol–gel method. The thermal decomposition behaviors of precursor powder were examined using thermo-gravimetric and differential scanning calorimeters analysis. The optimal heat treatment process for BFTO films were determined to be low-temperature drying at 200 °C for 4 min and high-temperature drying at 350 °C for 5 min followed by annealing at 740 °C for 60 min, which led to the formation of compact films with uniform grains of ~300 nm. The structural, surface topography, ferroelectric and magnetic properties of the films were investigated. The remnant polarization (2P _r) of BFTO thin films under an applied electric field of ~550 kV/cm are determined to be 67.5 μC/cm² . Meanwhile, the weak ferromagnetic properties of the BFTO films were observed at room temperature.     

Synthesis of Cu2Mo6S8 powders and thin films from intermediate oxides prepared by polymeric precursor method

Powders and thin films of the copper molybdenum sulfide Cu₂Mo₆S₈ were synthesized from intermediate oxides prepared by polymeric precursor method based on Pechini process. In the case of the thin films, deposition was performed onto R-plane sapphire single crystal by spin coating. The influence of temperature and duration of the 3 step heat treatment cycle (calcination, sulfurization and reduction) were investigated to optimize the synthesis conditions. The first step of calcination under air atmosphere performed for 3 h at 450 °C and 400 °C is suitable to obtain the intermediate oxides powders and thin films, respectively. The sulfurization treatment at 600 °C for 2 h under H₂S/H₂ gas flow followed by reduction at 650 °C for 4 h under H₂ gas flow allowed to obtain Cu₂Mo₆S₈ in powder or thin film form. In the last case, a multilayer process led to dense and homogeneous films. Moreover, the insertion and superconducting behaviour of the final powders allowed to validate the Cu₂Mo₆S₈ synthesis by this moderate temperature process.     

Sol–gel-derived titania-hydroxypropylcellulose hybrid thin films of high refractive indices: solution components affecting the refractive index and uncracking critical thickness

Optically transparent, ca. 200–800 nm thick TiO₂-hydroxypropylcellulose (HPC) hybrid thin films were prepared from Ti(OC₃H₇ⁱ)₄–HPC–HCl–H₂O–C₃H₇ⁱOH solutions by the sol–gel method, where the as-deposited films were dried at 120 °C. The effects of the amount of HPC, H₂O and HCl in the starting solutions on the refractive index and uncracking critical thickness of the films were studied, where the effects on the critical thickness was discussed on the basis of in situ stress measurements during heating. The increase in HPC content increased the critical thickness and lowered the refractive index. The increase in HCl content resulted in a decrease in critical thickness and an increase in refractive index. Larger H₂O contents gave rise to a maximum in critical thickness while the refractive index was unaffected. Such variation in critical thickness with varying solution compositions was demonstrated to result from the differences in in-plane stress generated during heating. By optimizing the processing parameters an 810 nm thick TiO₂–HPC hybrid film of a refractive index of 1.84 was obtained.     

Structural and optical properties of sprayed Zn1−xMnxO films

In recent years the dilute magnetic semiconductors have received much attention due to the complementary properties of semiconductor and ferromagnetic behaviour. Zn_1−xMn_xO thin films have been synthesized by chemical spray pyrolysis at a substrate temperature of 400 °C with different manganese compositions that vary in the range, 0.0 ≤ x ≤ 0.25, on Corning 7059 glass substrates. The X-ray diffraction studies revealed that all the films were strongly oriented along the (002) orientation corresponding to the hexagonal wurtzite structure. The crystalline quality of the layers was found to decrease with the increase of x, however, no structural changes were observed over the ‘Mn’ composition range investigated. The optical absorption studies revealed that the energy band gap of the films followed the Vegard's law. The optical band gap of the films prepared at x = 0.15 was found to be ∼3.35 eV. The photoluminescence characteristics of Zn_1−xMn_xO films showed an emission peak at around 390 nm with a broad band about 530 nm. The details of these results were reported and discussed.     

Mesoporous and nanocrystalline sol–gel derived NiTiO3 at the low temperature: Controlling the structure,size and surface area by Ni:Ti molar ratio

Nanocrystalline nickel titanate (NiTiO₃) thin films and powders with mesoporous structure were produced at the low temperature of 500 °C by a straightforward particulate sol–gel route. The sols were prepared in various Ni:Ti molar ratios. X-ray diffraction and Fourier transform infrared spectroscopy revealed that the powders contained mixtures of the NiTiO₃ and NiO phases, as well as the anatase-TiO₂ and the rutile-TiO₂ depending on the annealing temperature and Ni:Ti molar ratio. Moreover, it was found that Ni:Ti molar ratio influences the preferable orientation growth of the nickel titanate, being on (202) planes for the nickel dominant powders (Ni:Ti ≥ 75:25) and on (104) planes for the rest of the powders (Ni:Ti: ≤ 50:50). The average crystallite size of the powders annealed at 500 °C was in the range 1.5–2.4 nm and a gradual increase occurred up to 8 nm by heat treatment at 800 °C. The activation energy of crystal growth decreased with an increase of Ni:Ti molar ratio, calculated in the range 24.93–37.17 kJ/mol. Field emission scanning electron microscope analysis revealed that the deposited thin films had mesoporous and nanocrystalline structure with the average grain size of 20–35 nm. Moreover, atomic force microscope images presented that the thin films had a hill-valley like morphology with roughness mean square in the range 41–57 nm. Based on Brunauer–Emmett–Taylor analysis, the synthesized powders showed mesoporous structure containing pores with needle and plate like shapes. The mesoporous structure of the powders was stable at high annealing temperatures and one of the highest surface areas (i.e., 156 m²/g) reported in the literature was obtained for the powder containing Ni:Ti = 50:50 at 500 °C.     

The effect of polyvinyl alcohol (PVA) on the optical,electrical and solid state properties of copper zinc tin sulfide (CZTS) deposited by sensitive spray pyrolysis (SSP)

Recently, the use of CZTS as the basis for other generation of low cost thin films solar cells has stimulated further researches. Its excellent p-type absorber nature, relatively high absorption coefficient and ideal energy band-gap of 1.5eV motivated these efforts. Additionally, CZTS consist of earth-abundant, cheap and non-toxic elements with very low manufacturing cost. Initially, copper indium gallium selenide (CIGS) solar cell device emerged but suffered limitations in further development because of rare indium and gallium in the device structure therefore, CZTS is recently preferred as an alternative to CIGS commercial solar cell absorber layer. In this work, solution mixture of CZTS and PVA was deposited on a substrate at temperature of 150 °C. Sensitive spray pyrolysis was used to grow the thin films where calculated amount of the precursor mixture was allowed to fall and be deposited on a heated substrate to form CZTS/PVA thin films. Subsequently, the thin film samples were annealed at a temperature of 200^oCfor 1 h to achieving pure crystalline thin film formation. SEM, XRD analysis, Optical, Solid State properties and Raman analysis were studied. The XRD analysis showed that the thin films fell into the pure kesterite structure of CZTS. Results show that produced thin films exhibited higher absorption coefficient and optical conductivity than pure CZTS, 10⁶ m^?1 and 10¹⁴(S^?1) against 10⁴cm^?1 and 10¹²(S^?1) respectively. The band-gap is between 1.53eV and 1.73eV. Using a PVA concentration of 0.05 M yielded highest absorbance and optical conductivity with lowest real dielectric constant and transmittance. These improved optical, electrical and solid state properties suitably qualify these thin films as absorber layer material for solar cell applications.     

Correlation between structural and optical properties of TiO<Subscript>2</Subscript>:ZnO thin films prepared by sol–gel method

We have studied structural and optical properties of thin films of TiO₂, doped with 5% ZnO and deposited on glass substrate (by the sol–gel method). Dip-coated thin films have been examined at different annealing temperatures (350–450 °C) and for various layer thicknesses (89–289 nm). Refractive index, porosity and energy band gap were calculated from the measured transmittance spectrum. The values of the index of refraction are in the range of 1.97–2.44, the porosity is in the range of 0.07–0.46 and the energy band gap is in the range of 3.32–3.43. The coefficient of transmission varies from 50 to 90%. In the case of the powder of TiO₂, doped with 5% ZnO, and aged for 3 months in ambient temperature, we have noticed the formation of the anatase phase (tetragonal structure with 20.23 nm grains). However, the undoped TiO₂ exhibits an amorphous phase. After heat treatments of thin films, titanium oxide starts to crystallize at the annealing temperature 350 °C. The obtained structures are anatase and brookite. The calculated grain size, depending on the annealing temperature and the layer thickness, is in the range of 8.61–29.48 nm.     

Fabrication of self-organized TiO2 nanotubes from columnar titanium thin films sputtered on semiconductor surfaces

Self-organized nanotube arrays of TiO₂ have been grown from titanium (Ti) thin films deposited on p-type Si(1 0 0) substrates. Structural and morphological characterizations carried out by X-ray diffraction and scanning electron microcopy indicate that the sputtered crystalline Ti thin films used for subsequent anodization are hexagonally closed packed (hcp-Ti) and show a columnar morphology. Electrochemical anodization of the Ti films was carried out by potentiostatic experiments in 1 M H₃PO₄ + 1 M NaOH + 0.5 wt% HF electrolyte at room temperature. The TiO₂ nanotubes on a semiconductor substrate have an average tube length of approximately 560 nm, diameter in the order of 80 nm and wall thickness approximately 20 nm.     

Application of monodisperse TiO2 nanoparticles with the size of 8–10 nm in dye-sensitized solar cells

In this paper, the commercial monodisperse TiO₂ nanoparticles with the size of 8–10 nm were successfully applied to the photoelectrode for dye-sensitized solar cells (DSCs) and the influence of the thickness of the TiO₂ thin films on the photovoltaic performance of the DSCs was investigated. The result revealed that the DSCs with the TiO₂ thin film thickness of 3.6, 8.0, 11.6 and 20.0 μm gave the photoelectric conversion efficiency of 3.67%, 5.92%, 6.71% and 7.03%, respectively, under the illumination of simulated AM 1.5 sunlight (100 mW cm⁻²).     

Preparation and photoelectric properties of mesoporous ZnO films

Mesoporous ZnO films doped with Ti⁴⁺ (M-ZnO) have been prepared by doping process and sol–gel method. The films have mesoporous structures and consist of nano-crystalline phase, as evidenced from small angle X-ray diffraction and high resolution transmission electron microscopy. The wide angle X-ray diffraction of M-ZnO films confirms that M-ZnO has hexagonal wurtzite structure and ternary ZnTiO₃ phases. Ultraviolet–visible transmittance spectra, absorbance spectra and energy gaps of the films were measured. The Eg of M-ZnO is 3.25 eV. Photoluminescence intensity of M-ZnO centered at 380 nm increases obviously with the excitation power, which is due to the doping process and enhanced emission efficiency. M-ZnO thin films display a positive photovoltaic effect compared to mesoporous TiO₂ (M-TiO₂) films.     

Preparation and Characterization of Thin-Film Solar Cells with Ag/C60/MAPbI3/CZTSe/Mo/FTO Multilayered Structures

New solar cells with Ag/C₆₀/MAPbI₃/Cu₂ZnSnSe₄ (CZTSe)/Mo/FTO multilayered structures on glass substrates have been prepared and investigated in this study. The electron-transport layer, active photovoltaic layer, and hole-transport layer were made of C₆₀, CH₃NH₃PbI₃ (MAPbI₃) perovskite, and CZTSe, respectively. The CZTSe hole-transport layers were deposited by magnetic sputtering, with the various thermal annealing temperatures at 300 °C, 400 °C, and 500 °C, and the film thickness was also varied at 50~300 nm The active photovoltaic MAPbI₃ films were prepared using a two-step spin-coating method on the CZTSe hole-transport layers. It has been revealed that the crystalline structure and domain size of the MAPbI₃ perovskite films could be substantially improved. Finally, n-type C₆₀ was vacuum-evaporated to be the electronic transport layer. The 50 nm C₆₀ thin film, in conjunction with 100 nm Ag electrode layer, provided adequate electron current transport in the multilayered structures. The solar cell current density–voltage characteristics were evaluated and compared with the thin-film microstructures. The photo-electronic power-conversion efficiency could be improved to 14.2% when the annealing temperature was 500 °C and the film thickness was 200 nm. The thin-film solar cell characteristics of open-circuit voltage, short-circuit current density, fill factor, series-resistance, and Pmax were found to be 1.07 V, 19.69 mA/cm², 67.39%, 18.5 Ω and 1.42 mW, respectively.