Mn/GaAs(100)界面电子结构的同步辐射光电子能谱研究

利用同步辐射光电子能谱,研究了室温下在GaAs(100)表面上淀积的Mn的超薄膜的电子结构.实验发现,在θ<2ML的覆盖度下,Mn3d电子的能量态密度分布与体金属α-Mn差别很大当θ>2ML之后,便逐步接近α-Mn的体电子结构.这一结果可由Mn3d电子的自旋向上带和自旋向下带的交换分裂很好地解释.由此推断,当覆盖度θ<2ML时,在GaAs(100)表面上淀积的Mn的超薄膜具有磁有序结构 关键词：     

O在预覆盖K的Ag(110)表面的共吸附及其性质

本文用X射线光电子能谱(XPS),紫外光电子能谱(UPS),电子能量损失谱(EELS)和低能电子衍射(LEED)研究了O与预覆盖K的Ag(110)表面相互作用及其性质。在低覆盖度K下,发现有两种O的吸附态,经鉴别为溶解到表面下的O^2-和表面上吸附的O^x-增加K的覆盖度,出现分子状态的吸附物O₂^δ-,它与表面下存在的K相联系。XPS和UPS均清楚地显示出对应于三种不同吸附态的光电子发射峰。Ag(110)表面预覆盖K后的粘滞系数大大增加。K和O的共吸附引起它们彼此向Ag(110)表面下的溶解。LEED实验结果表明,清洁Ag(110)表面覆盖单层K原子后衍射图形从(1×1)变到(1×2),再吸附O后表面吸附层结构变为(2×1)。另外,结合UPS和EELS测量初步考察了O/K/Ag(110)共吸附系统的电子结构。本文还提出了一个共吸附模型来解释这些现象。 关键词：     

助催化剂Co与单晶MoS2边缘面区域及离子溅射解理面相互作用

为了阐明Co原子在钼硫化态催化剂表面上的助催化作用,本文利用UPS,XPS和LEED,研究了Co-Mo催化剂活性相的层状硫化物半导体MoS₂单晶边缘面区域的成分较高的表面以及离子溅射解理面上过渡金属Co的亚原子单层淀积过程。在覆盖度为某个亚原子单层时,表面上存在的与淀积上去的Co有关的界面态,改变了E_F能级的钉扎位置(提高了0.30—0.35eV),使表面势垒下降,表面功函数减小。在E_F附近电子结构的明显变化和LEED研究的结果表明,在MoS₂表面的无序缺陷位置上,可能形成了有利于催化过程的Co-Mo-S类合金键型的活性相。 关键词：     

Ga在Ni(111)表面上形成的超结构

使用自制的简易蒸发源,将金属Ga蒸镀在Ni(111)表面上。在亚单层时,用低能电子衍射(LEED)和俄歇电子能谱(AES)观测到Ga在Ni(111)面上形成(3^(1/2)×3^(1/2))R30°和(2×2)两种超结构。并建立起近似平衡图,粗略地确定了这两种超结构存在的覆盖度和温度范围。 关键词：     

用多步激发技术测定锶的(5p3/2ns)1及(5p3/2nd)3自电离谱

用分步激发方法及偏振光技术,测定了锶的(5p_3/2ns)₁(n=13-21)及(5p_3/2 nd)₃(n=13-24)各自电离谱,在低于5p_1/2电离限的(5p_3/2ns)₁态的实电子激发谱中,出现对应于(5p_1/2ns)₁及(5p_1/2nd)₁的畸变峰,畸变峰也出现于(5p_3/2nd)₃的实电子激发谱中。这说明(5p_jns)(5p_jnd)自电离系列间存在相互作用。 关键词：     

掺Bi钨酸镉单晶体发光特性的研究

用坩埚下降法(Bridgman)生长出了Bi离子掺杂的CdWO₄单晶.测定了晶体不同部位的吸收光谱、发射光谱和X射线电子能谱(XPS).Bi离子的掺入引起CdWO₄晶体的吸收边从345 nm红移到399 nm.在311 nm, 373 nm,808 nm和980 nm光的激发下,分别观测到中心波长为470 nm,528 nm,1078 nm和较弱的1504 nm四个不同发射带.Bi:CdWO₄单晶的XPS谱分别与Bi₂ 关键词： Bi离子 荧光光谱 X射线电子能谱 4单晶')" href="#">CdWO₄单晶     

Gd掺杂的Bi系2212相单晶电子状态的X射线光电子能谱研究

利用X射线光电子能谱(XPS)研究了Bi系纯2212相超导单晶和Gd掺杂的2212相绝缘体单晶的电子状态的区别。实验结果表明Gd掺杂引起超导电性的变化是由于D_2p轨道空穴填充引起。本文还对Cu2p_3/2XPS卫星峰与主峰强度之比(I_s/I_m),Bi-O层性质以及Bi系Fermi能级附近态密度的来源等问题进行了讨论。 关键词：     

用HREELS,XPS,LEED研究Al-GaAs(100)(4×1)界面反应

高分辨率电子能量损失谱(HRFELS)能直接判定Al-GaAS(100)界面反应的生成物。本文结合X射线光电子能谱(XPS)的测量,采用HREELS来测量界面的禁带宽度,研究了Al-GaAs(100)(4×1)界面的形成过程。结果判定了室温下Al-GaAs(100)界面生成的为AlAs。而退火后,界面上生成AlCaAs合金。实验中还用低能电子衍射(LEED)观察了室温下Al在GaAs(100)(4×1)面上的淀积过程,发现随着Al淀积量的增加,表面是从无序到有序转化的。 关键词：     

P2S5/NH4OH处理GaAs(100)表面的电子能谱研究

采用俄歇电子能谱(AES)和X射线光电子能谱(XPS)研究了P₂S₅/NH₄OH钝化液处理的GaAs(100)表面的微观特性。AES测量表明,在钝化膜和GaAs衬底之间的界面处无O组分,只有P和S组分。XPS测量分析指出,经过P₂S₅/NH₄OH溶液处理后,GaAs表面处Ga₂O₃和As₂O_{3关键词：}     

Au/a-Si:H界面X射线光电子能谱和俄歇电子能谱研究

采用x射线光电子能谱(XPS)和俄歇电子能谱(AES)对Au/a-Si:H界面进行了研究。实验表明,Au/a-Si:H界面最初形成过程是以金属团生长形式出现,当Au淀积量超过一定值后,Au和Si开始互扩散并进行化学反应,结果形成Au-Si互溶区。利用光发射方法证实,热处理Au/a-Si:H界面导致淀积膜中Si岛形成。 关键词：     

The Fe/ZnO(0 0 0 1) interface: Formation and thermal stability

The room temperature growth mode and the interface reaction of Fe films on single crystalline ZnO(0 0 0 1) substrates prepared in ultra high vacuum (UHV) has been investigated by means of X-ray photoelectron and Auger electron spectroscopy (XPS, AES), low energy electron diffraction (LEED) and low energy ion scattering spectroscopy (LEIS). The results show that Fe grows in the pseudo layer-by-layer mode. At ambient temperature the deposited Fe film reduces the underlying ZnO single crystal resulting in FeO at the interface and metallic Zn, which partially diffuses into the remaining Fe overlayer. Annealing leads to a stepwise oxidation of the Fe to FeO (670 K) and Fe₂O₃ (820 K). The Fe₂O₃ mixes with the substrate resulting in two (1 1 1) oriented textures of a spinel phase found by electron backscatter diffraction analysis (EBSD). Fe-based spin-injection may play a vital role for ZnO-based spintronic devices.     

α-P/GaAs(100)界面的光电子能谱研究

本文采用X射线光电子能谱、紫外光电子能谱和低能电子衍射对室温下P在GaAs(100)表面上的生长进行了研究。结果表明,在生长初期P是成团吸附的,随着淀积量的增加而生长成α-P薄膜,该薄膜的价带结构与等离子体淀积的α-P:H薄膜的价带结构相似。在界面处有约一单层的P与衬底表面的Ga成键。α-P覆盖层使GaAs表面势垒下降约0.2eV。 关键词：     

Initial oxidation of the Mg(0001) surface,an electron spectroscopy study

The initial oxidation of Mg(0001) has been studied using AES (Auger electron spectroscopy), LEED (low energy electron diffraction), and EELS (electron energy loss spectroscopy). The oxidation proceeds through different stages; first oxygen atoms are incorporated to chemisorption sites below the top layer magnesium. This chemisorption phase is followed by the formation of an oxide layer. The oxide layer covers the Mg surface after an oxygen exposure of ～ 10 L O₂. After this exposure the bulk-like MgO formation slowly increases the oxide thickness. The oxide layer formed for exposures up to ≤ 10 L O₂ gives rise to a diffuse LEED pattern of the same symmetry as the original “clean” LEED pattern; the possibility of an epitaxial oxide formation at this stage is discussed.     

The epitaxial growth of thallium on copper (100): A study by LEED,AES, UPS and EELS

LEED, AES, UPS and EELS have been used to observe the growth of thallium in the Stranski-Krastanov mode on copper(100). In the sub-monolayer range, thallium forms three commensurate ordered overlayer structures. The transition from the first overlayer structure to the second involves a transition from a one-dimensional to a two-dimensional structure. The resulting change in co-ordination number reduces the binding energy of the thallium 5d core levels and increases their width.     

The chemisorption of carbon monoxide on a Co(0001) single crystal surface; studied by LEED,UPS, EELS,AES and work function measurements

The chemisorption of CO on Co(0001) has been investigated by LEED, UPS, EELS, Auger and sp measurements. CO is molecularly adsorbed on Co(0001) in the investigated temperature range from 100 to 450 K. This is deduced from the UPS and EELS results and the reversibility of the sp and LEED data. The isosteric heat of adsorption has a constant value of 128 kJ/mol up to a coverage of $\text{1}\text{3}$ and drops then to about 96 kJ/mol. This coincides with the completion of a (√3 × √3)R30° overlayer structure and the formation of a (2√3 × 2√3)R30° CO overlayer which is fully developed at 100 K.     

Growth of Sb overlayers on GaAs(110)

The GaAs(110)-Sb system is studied with AES, EELS, LEED, ellipsometric spectroscopy and SEM. As indicated by EELS Sb atoms are adsorbed first on Ga sites. The AES spectra can be explained by assuming a simultaneous growth of multiple layers on top of a well ordered homogeneous first monolayer (MSM growth mode). The results of ellipsometric spectroscopy confirm the inhomogeneity of the Sb-film as proposed by the MSM mode. Desorption experiments and EELS demonstrate a strong chemical bonding between the first Sb monolayer and the substrate.     

Ni2MnGa(100) ferromagnetic shape memory alloy: A surface study

Ni₂MnGa(100) single crystal studied using low energy electron diffraction (LEED) and ultraviolet photoemission spectroscopy (UPS) exhibits interesting modification of the surface properties that are mainly influenced by surface composition as well as intrinsic effects. In the martensite phase, the LEED spot profiles show presence of an incommensurate modulation for the stoichiometric surface. In contrast, a commensurate modulation is observed for Mn-excess Ni–Mn–Ga surface. A pre-martensite phase is identified at the surface. Both the surface martensitic and pre-martensitic transition temperatures decrease as the Mn content increases. The UPS spectra in the austenite phase exhibit systematic change in shape as a function of surface composition that can be related to changes in the hybridization between Ni and Mn 3d states. The spectra in the martensite phase exhibit interesting modifications near the Fermi level, which has been compared to density of states calculated for a modulated structure by ab-initio density functional theory. Intrinsic surface properties dissimilar from the bulk are enhanced hysteresis width of the martensite transition and increased pre-martensitic transition temperature.     

The adsorption of fluor-carbon complexes on GaAs(110) studied by electron energy loss spectroscopy

The room temperature adsorption of CF₃COOH, CH₃COOH and CO on cleaved GaAs(110) surfaces has been studied by vibrational electron energy loss spectroscopy (HRELS), second derivative electron energy spectroscopy (ELS) and electron diffraction (LEED). CO does not adsorb on the GaAs surfaces in measurable quantities. Acetic acid CH₃COOH is dissociatively adsorbed as an acetate bonded to Ga surface atoms with the split-off hydrogen on As surface atoms. The fluorated acid CF₃COOH decomposes via an acetate intermediate CF₃COO into active CF₃ groups which adsorb on Ga surface atoms. The split-off hydrogen sticks to surface As atoms while the generated CO₂ desorbs. The adsorption models are consistent with the LEED c(2×2) superstructure observed after saturated adsorption of both acids.     

Alloy formation of Co/Ni/Pt(1 1 1)

The initial growth and alloy formation of ultrathin Co films deposited on 1 ML Ni/Pt(1 1 1) were investigated by Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and ultraviolet photoelectron spectroscopy (UPS). A sequence of samples of d_Co Co/1 ML Ni/Pt(1 1 1) (d_Co = 1, 2, and 3 ML) were prepared at room temperature, and then heated up to investigate the diffusion process. The Co and Ni atoms intermix at lower annealing temperature, and Co-Ni intermixing layer diffuses into the Pt substrate to form Ni-Co-Pt alloys at higher annealing temperature. The diffusion temperatures are Co coverage dependent. The evolution of UPS with annealing temperatures also shows the formation of surface alloys. Some interesting LEED patterns of 1 ML Co/1 ML Ni/Pt(1 1 1) show the formation of ordered alloys at different annealing temperature ranges. Further studies in the Curie temperature and concentration analysis, show that the ordered alloys corresponding to different LEED patterns are Ni_xCo_1−xPt and Ni_xCo_1−xPt₃. The relationship between the interface structure and magnetic properties was investigated.