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1.
用多弧离子镀技术在不同金属基材上进行TiN镀膜实验 ,制备了TiN/Fe、TiN/Cu和TiN/Cr/Cu复合膜 .借助扫描电子显微镜 (SEM)、X射线衍射仪 (XRD)和光电子能谱 (XPS) ,研究了TiN与Fe、Cu和Cr/Cu三种不同衬底接触界面的形貌、结构及其表面特性 .SEM观察发现 ,在一定离子镀膜条件下 ,TiN涂层可与Fe、Cu和Cr/Cu金属基材形成均匀平整的接触界面 ,在铜基上TiN界面清晰 ,在Fe与Cr/Cu界面有明显的层状晶界微结晶分布 .XRD分析显示 ,Fe、Cu和Cr/Cu表面生成的薄膜都包含TiN、Ti2 N等多晶相 ,在Cr/Cu界面还包含Ti-Cr的金属间化合物 .XPS结果表明 ,表面除了TiN膜外 ,还生成TiO2 和TiOxNy 等氧化膜 .Ar+ 刻蚀 5min后 ,TiO2 消失 ,TiOxNy 减少 ,TiN则呈增加趋势 .TiN与Cr/Cu界面形成明显的Ti-Cr和Cr-Ni互扩散层 ,这有助于增强薄膜附着力 ,形成较牢固的TiN涂层 .  相似文献   

2.
TiN和Ti1-xSixNy薄膜的微观结构分析   总被引:2,自引:0,他引:2       下载免费PDF全文
使用x射线衍射(XRD)、x射线光电子谱(XPS)、高分辨透射电子显微镜(HRTEM)和原子力显微镜(AFM)多种观测手段分析了TiN薄膜和Ti1-xSixNy纳米复合薄膜的微观结构.实验分析证明Ti1-xSixNy薄膜是由直径为3—5nm的纳米晶TiN和非晶Si3N4相构成,并且Ti1-xSix关键词: 纳米复合薄膜 自由能 表面粗糙度 TiN 1-xSixNy')" href="#">Ti1-xSixNy  相似文献   

3.
Ti与莫来石陶瓷衬底的界面反应   总被引:2,自引:0,他引:2       下载免费PDF全文
在抛光的200℃莫来石陶瓷衬底上电子束蒸发淀积200nm的Ti膜,并在高真空中退火,利用二次离子质谱(SIMS)、俄歇电子能谱(AES)和X射线衍射分析(XRD)研究了从200—650℃Ti与莫来石的固相界面反应.结果表明,在淀积过程中,最初淀积的Ti与衬底表面的氧形成Ti—O键,并有微量元素态Al,Si原子析出,界面区很窄;450℃,1h退火后,界面区有所展宽,但变化不大;650℃,1h退火后,界面发生强烈反应,样品主要由TiO+Ti,Ti3Al,Ti3Al+TiSi2和莫来石陶瓷衬底四层结构组成 关键词:  相似文献   

4.
纳米Cu3N薄膜的制备与性能   总被引:6,自引:0,他引:6       下载免费PDF全文
采用柱状靶多弧直流磁控溅射法,100℃基底温度下在玻璃衬底上制备了纳米氮化铜(Cu33N)薄膜.用x射线衍射研究了不同氮气分压对Cu33N薄膜晶体结构 及晶粒尺寸的影响.结果显 示薄膜由Cu33N和Cu的纳米微晶复合而成,其中Cu33N纳米微晶具有 立方反ReO33结构.通 过原子力显微镜对薄膜表征显示,膜表面比较光滑,具有较低的粗糙度.x射线光电子能谱对 薄膜表面的成分分析表明,Cu3 关键词: 氮化铜薄膜 多弧直流磁控溅射 3结构')" href="#">立方反ReO33结构  相似文献   

5.
添加Y改善离子镀氮化钛膜的结构与性能   总被引:4,自引:0,他引:4       下载免费PDF全文
刘长清  吴维?  金柱京 《物理学报》1991,40(9):1520-1524
评价了离子镀氮化钛(TiN)和Y改性氮化钛(Ti(Y)N)膜的结合强度和在酸性介质中的耐蚀性能;用X射线衍射,离子探针质谱分析(IMA),透射电子显微镜(TEM)研究它们的显微结构特征;结果表明,添加Y元素富集在Ti(Y)N与A3钢基材界面区域,并形成厚度约为20nm的亚层,Y的界面改性导致Ti(Y)N膜的X射线衍射线形略有宽化和明显的TiN相(111)面的择优生长取向;这些显微结构特征的改善导致Ti(Y)N膜比TiN膜具有更高的界面结合强度和更好的耐蚀性能。 关键词:  相似文献   

6.
李健  宋功保  王美丽  张宝述 《物理学报》2007,56(6):3379-3387
采用溶胶凝胶法制备了Ti1-xCrxOδ体系系列样品.利用扫描电子显微镜(SEM),X射线光电子能谱(XPS),粉末X射线衍射分析(XRD)方法研究了Ti1-xCrxOδ系列样品的颗粒尺寸、形貌、组分化学态、相关系和固溶区范围;并利用超导量子干涉磁强计对样品的磁性能进行了研究.采用Rietveld结构精修的方法研究了Cr的不同掺杂量对TiO2晶体结构的影响,研究表明,1000℃烧结的样品的固溶区范围是x=0—0.03,为金红石单相;随着Cr掺杂量的增加,金红石相晶胞参数规律性地减小;当x>0.03,为金红石相和CrO2相两相共存.综合XRD和磁性测量结果,500℃烧结的样品的固溶区范围是x=0—0.02,为锐钛矿单相;随着Cr掺杂量的增加,锐钛矿相晶胞参数规律性地减小;当x≥0.04,为锐钛矿相和绿铬矿相(Cr2O3)两相共存.XPS实验结果表明,500℃和1000℃退火的样品中Cr都是以Cr+3和Cr+6两种化学态存在,1000℃烧结的样品中可能有更多的Cr3+转化为Cr6+.根据M-HM-T曲线的测试结果发现,本文500℃烧结的Ti1-xCrxOδ体系样品当x=0—0.02时,为室温铁磁性.当x≥0.04时,由铁磁相和顺磁相所组成,在低温下有较强的铁磁性;室温下主要是顺磁相,铁磁相只占据很小的体积分数. 关键词: 1-xCrxOδ体系')" href="#">Ti1-xCrxOδ体系 相关系 固溶区 磁性能  相似文献   

7.
马锡英  贺德衍  陈光华 《物理学报》2001,50(10):2023-2027
应用热丝辅助等离子体化学气相沉积法(CVD)合成了表面呈柱状的BC2N薄膜,X射线、红外及X射线电子能谱分析表明,薄膜的化学组分主要为BC2N,B,C和N原子间互相结合成键.扫描电镜观察到,薄膜表面形貌呈排列整齐、取向一致的柱体,并且发现这种生长方式与沉积参数密切相关.最后从结合能方面讨论了柱状BC2N的生长机理. 关键词: 2N')" href="#">BC2N 柱状生长 CVD法  相似文献   

8.
陈玉红  杜瑞  张致龙  王伟超  张材荣  康龙  罗永春 《物理学报》2011,60(8):86801-086801
采用第一性原理方法研究了H2分子在Li3N(110)晶面的表面吸附. 通过研究H2/Li3N(110)体系的吸附位置、吸附能和电子结构发现: H2分子吸附在N桥位要比吸附在其他位置稳定,此时在Li3N(110)面形成两个-NH基,其吸附能为1.909 eV,属于强化学吸附;H2与Li3N(110)面的相互作用主要是H 1s轨道与N 关键词: 第一性原理 3N(110)')" href="#">Li3N(110) 2')" href="#">H2 吸附和解离  相似文献   

9.
PIIID复合强化处理轴承钢表面TiN膜层的XPS表征   总被引:1,自引:0,他引:1  
用等离子体浸没离子注入与沉积(PIIID)复合强化新技术在AISI52100轴承钢基体表面成功合成了硬而耐磨的氮化钛薄膜。膜层表面的化学组成和相结构分别用X射线衍射(XRD)和X射线光电子能谱(XPS)表征;膜层表面的原子力显微镜(AFM)形貌显示出TiN膜结晶完整,结构致密均匀。XRD测试结果表明,TiN在(200)晶面衍射峰最强,具有择优取向。Ti(2p)的XPS谱峰泰勒拟合分析揭示出,Ti(2p1/2)峰和Ti2p3/2峰均有双峰出现,表明氮化物中的Ti至少存在不同的化学状态;N(1s)的XPS谱峰在396.51, 397.22和399.01 eV附近出现了三个分峰,分别对应于TiNOy,TiN和N—N键中的氮原子。结合O(1s)的XPS结果,证实膜层中除生成有稳定的TiN相外,还有少量钛的氧化物和未参与反应的单质氮。整个膜层是由TiN,TiO2,Ti—O—N化合物和少量单质氮组成的复合体系。  相似文献   

10.
顾诠  王佑祥  崔玉德  陈新  陶琨 《物理学报》1996,45(5):832-843
在超高真空中用电子束蒸发在抛光的(1102)取向的蓝宝石(α-Al2O3)衬底上蒸镀500nm的Ti膜,在恒温炉中退火,然后用XRD(包括一般的和小角度的X射线衍射),AES(俄歇电子谱,包括深度剖面分布和通过界面的谱形分析)和SIMS(二次离子质谱)等表面分析技术详细研究了从室温至850℃,Ti与α-Al2O3的固相界面反应.结果表明室温及300℃,30min退火已有反应,Al2O3< 关键词:  相似文献   

11.
研究了在高压条件下Ti2Al N-Al的热稳定性。X射线衍射(XRD)和扫描电镜(SEM)的实验结果表明,Ti2Al N-Al的稳定性与压力的关系较小。在不同压力(3、4和5 GPa)下,Ti2Al N-Al反应的最低温度在500~600℃之间,反应产物主要依赖于温度。900℃保温、保压20 min,Ti2Al N-Al基本反应完全,反应的最终产物主要为Al3Ti和Ti N。  相似文献   

12.
Ba(Zr0.05Ti0.95)O3 (BZT) thin films grown on Pt/Ti/SiO2/Si(1 0 0) substrates were prepared by chemical solution deposition. The structural and surface morphology of BZT thin films has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). The results showed that the random oriented BZT thin film grown on Pt/Ti/SiO2/Si(1 0 0) substrate with a perovskite phase. The SEM surface image showed that the BZT thin film was crack-free. And the average grain size and thickness of the BZT film are 35 and 400 nm, respectively. Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The XPS results show that Ba, Ti, and Zr exist mainly in the forms of BZT perovskite structure.  相似文献   

13.
In this work, the effect of modulation period (Λ) on Ti/TiN multilayer films deposited on high-speed-steel (HSS) substrates using pulse biased arc ion plating is reported. The crystallography structures and cross-sectional morphology of Ti/TiN multilayer films were characterized by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM), respectively. Their mechanical properties were determined via nanoindentation measurements, while the film/substrate adhesion via the scratch test. It was found that the highest hardness value reached 43 GPa for the modulation period of 54 nm, while the film/substrate adhesion also reached the highest value of 83 N. Furthermore, the hardness enhancement mechanism in the multilayer films is discussed.  相似文献   

14.
Thin films of Ti-B-N with different N contents were deposited on Si(1 0 0) at room temperature by reactive unbalanced close-field dc-magnetron sputtering using three Ti targets and one TiB2 target in an Ar-N2 gas mixture. The effect of N content on bonding structure, microstructure, phase configuration, surface roughness and mechanical properties have been investigated using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), cross-sectional scanning electron microscopy (SEM), plan-view and cross-sectional high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM) and microindentation measurements. It was found that the N content significantly affected phase segregation and microstructure. The nitrogen-free TiB0.65 films showed an amorphous compound consisting of Ti and TiB2 (Ti-TiB2). After adding about 28 at.% N, Ti was preferentially bonded to N to form TiN, accompanying with formation of small amounts of TiB and BN bonds. At this stage they combined TiB2 to form a two-phase nanocomposite with microstructures comprising of nanocrystalline (nc-) TiN phase in nitrogen-containing amorphous (a-) TiB2 matrix. Addition of more N promoted formation of BN bonding at cost of TiB2, which resulted in formation of nanocomposite nc-TiN/a-(TiB2, BN) thin films. A small grain less than 8 nm in size was found at low N content, and the grain size increased with increasing N content. A low microhardness value of about 20 GPa was obtained in the amorphous Ti-TiB2 compound, and a maximum microhardness value of about 50 GPa was achieved in nc-TiN/a-TiB2. A decrease of microhardness took place after formation of BN (i.e. amorphous matrix composed by both TiB2 and BN) with further increasing N content, and a hardness value of about 35 GPa was followed at high N contents. The surface roughness strongly depended on the phase configuration. The higher the mole fraction of nanocrystalline TiN phase, the rougher the surface became.  相似文献   

15.
曾凡浩  章晓中 《物理学报》2007,56(1):522-528
用脉冲激光沉积(PLD)的方法在硅单晶基片上制备了Ti90Cr10和Co80Cr20/Ti90Cr10薄膜,用XRD研究了Ti90Cr10薄膜的晶体结构与制备温度的关系,结果表明随着温度升高,薄膜从非晶态逐步向晶态转化,并且计算了Ti90Cr10薄膜的晶粒大小以及晶格常数. 利用透射电镜对Ti90Cr10薄膜进行了表面和截面形貌的表征. 采用纳米压痕仪对Ti90Cr10薄膜的硬度和膜基界面结合力进行了分析,表明薄膜的硬度和膜基结合力随制备条件改变有所变化,制备温度增加,薄膜的硬度和膜基结合力随之增加. 利用Ti90Cr10薄膜作为中间层,用PLD制备了Co80Cr20磁性层,获得了很好的垂直磁化性质,膜厚减小,矫顽力和矩形比有所增加,600℃真空条件下制备的Co80Cr20(8 nm)/Ti90Cr10(14 nm)薄膜的矫顽力为65.25 kA/m,矩形比为0.86,并且讨论了Co80Cr20/Ti90Cr10薄膜的磁化性质.  相似文献   

16.
Porous nanocrystalline Ti(C0.7N0.3) film on Ti6Al4V substrate was prepared by plasma electrolytic carbonitriding (PECN). The film was characterized and analyzed by using a variety of analytical techniques, such as XRD, SEM, EDX, TEM, FESEM, Rockwell C indenter, scratch tester, Vickers microhardness tester and ring-on-block tribometer. The results showed that the film was about 15 μm thick and its hardness was Hv 2369 at a load of 0.2 N. The adhesion of the film was characterized by Lc and Pc value, and was found to be about 42 N and more than 800 N, respectively. The friction coefficients and wear volume loss of the PECN-treated samples sliding against a steel counterpart were much less than those of the untreated Ti6Al4V. The film possessed a good wear-resistance and antifriction under oil-lubricated condition due to its high hardness, adhesion and fracture toughness. Also, the porous surface morphology of the Ti(C0.7N0.3) film contributed to the enhanced tribological resistance by promoting the formation of lubricant film and entrapping wear debris.  相似文献   

17.
The lattice parameters, cell volume, elastic constants, bulk modulus, shear modulus, Young's modulus and Poisson's ratio are calculated at zero pressure, and their values are in excellent agreement with the available data, for TiN, Ti2N and Ti3N2. By using the elastic stability criteria, it is shown that the three structures are all stable. The brittle/ductile behaviors are assessed in the pressures from 0 GPa to 50 GPa. Our calculations present that the performances for TiN, Ti2N and Ti3N2 become from brittle to ductile with pressure rise. The Debye temperature rises as pressure increase. With increasing N content, the enhancement of covalent interactions and decline of metallicity lead to the increase of the micro-hardness. Their constant volume heat capacities increase rapidly in the lower temperature, at a given pressure. At higher temperature, the heat capacities are close to the Dulong–Petit limit, and the heat capacities of TiN and Ti2N are larger than that of c-BN. The thermal expansion coefficients of titanium nitrides are slightly larger than that of c-BN. The band structure and the total Density of States (DOS) are calculated at 0 GPa and 50 GPa. The results show that TiN and Ti2N present metallic character. Ti3N2 present semiconducting character. The band structures have some discrepancies between 0 GPa and 50 GPa. The extent of energy dispersion increases slightly at 50 GPa, which means that the itinerant character of electrons becomes stronger at 50 GPa. The main bonding peaks of TiN, Ti2N and Ti3N2 locate in the range from −10 to 10 eV, which originate from the contribution of valance electron numbers of Ti s, Ti p, Ti d, N s and N p orbits. We can also find that the pressure makes that the total DOS decrease at the Fermi level for Ti2N. The bonding behavior of N–Ti compounds is a combination of covalent and ionic nature. As N content increases, valence band broadens, valence electron concentration increases, and covalent interactions become stronger. This is reflected in shortening of Ti–N bonds.  相似文献   

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