Ohmic contact and space-charge-limited current in molybdenum oxide modified devices

The effect of indium-tin oxide (ITO) surface treatment on hole injection of devices with molybdenum oxide (MoO₃) as a buffer layer on ITO was studied. The Ohmic contact is formed at the metal/organic interface due to high work function of MoO₃. Hence, the current is due to space charge limited when ITO is positively biased. The hole mobility of N, N′-bis-(1-napthyl)-N, N′-diphenyl-1, 1′biphenyl-4, 4′-diamine (NPB) at various thicknesses (100–400 nm) has been estimated by using space-charge-limited current measurements. The hole mobility of NPB, 1.09×10⁻⁵ cm²/V s at 100 nm is smaller than the value of 1.52×10⁻⁴ cm²/V s at 400 nm at 0.8 MV/cm, which is caused by the interfacial trap states restricted by the surface interaction. The mobility is hardly changed with NPB thickness for the effect of interfacial trap states on mobility which can be negligible when the thickness is more than 300 nm.     

Effect of temperature of annealing on optical, structural and electrochromic properties of sol-gel dip coated molybdenum oxide films

The sol-gel dip-coating method is used for the preparation of MoO₃ thin films. The 6 layered MoO₃ films were prepared and annealed at various temperatures in the range of 200-350 °C. The band gap value for MoO₃ films were calculated from optical absorption measurements and it is in the range of 3.55-3.73 eV. XRD spectrum reveals (0 2 0) is the major diffraction plane for the films prepared above 250 °C, which reveals the formation of MoO₃ in α-orthorhombic phase. The films prepared at 200 °C and 250 °C exhibits amorphous nature. The FTIR spectrum confirms the presence of Mo-O-Mo and MoO bonds. Nanorods were observed in the SEM images in the case of MoO₃ films prepared above 250 °C. The films prepared at 250 °C exhibit maximum anodic diffusion coefficient of 9.61 × 10⁻¹¹ cm²/s. The same film exhibits the change in optical transmission of 58.4% at 630 nm with the optical density of 0.80.     

Growth and surface characterization of sputter-deposited molybdenum oxide thin films

Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of an argon-oxygen gas mixture under varying conditions of substrate temperature (T_s) and oxygen partial pressure (pO₂). The effect of T_s and pO₂ on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy-dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of T_s and pO₂ on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 °C under 62.3% O₂ pressure were stoichiometric and polycrystalline MoO₃. Films grown at lower pO₂ were non-stoichiometric MoO_x films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO₃ films.     

Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide (Ta-doped ITO) films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $\sim 5.65\times 10^{ - 5}$~$\Omega \cdot$cm$^{2}$ and show the transmittance of $\sim $98% at a wavelength of 440~nm when annealed at 500~\du. Blue light emitting diodes (LEDs) fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21~V at an injection current of 20~mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20~mA in comparison with that of LEDs with conventional Ni/Au contacts.     

A photoelectron spectroscopic study of the carburization of MoO3

MoO₃ and Mo samples containing copper were treated with different hydrocarbon/hydrogen gas mixtures. The formation of Mo₂C was followed by X-ray photoelectron spectroscopy (XPS). Spectra taken in the Mo 3d, C 1s, O 1s, Cu 2p and Cu KLL regions demonstrated that the treatment with the hydrocarbon/hydrogen gas mixtures led to the formation of Mo₂C. From the comparison of the effects of various hydrocarbons on the XP spectra of Mo 3d we can state that the reduction of MoO₃ starts at the lowest temperature for C₂H₆/H₂ (600 K) followed by CH₄/H₂ (700 K) and C₄H₁₀/H₂ (723 K). Binding energies of Mo 3d_5/2 characteristic for Mo₂C are measured in the range of 227.7-228.0 eV. These values were attained at 900 K for CH₄/H₂, at 800 K for C₂H₆/H₂ and at 873 K for C₄H₁₀/H₂. Addition of copper to MoO₃ catalyzed its reduction and promoted the carburization process.     

p-GaN/p-AlxGa1-xN异质结界面处二维空穴气的性质及其对欧姆接触的影响

通过自洽求解一维泊松方程和薛定谔方程,得到了p-GaN/p-Al_xGa_1-xN异质结界面处的价带结构和二维空穴气（2DHG）分布,研究了A1组分和压电极化效应对界面处2DHG性质的影响,给出了异质界面处2DHG的面密度、浓度分布以及价带结构.实验结果表明:随着Al组分的增加,异质结界面处势阱明显加深变窄,这使得2DHG的峰值密度加速上升,也使得面空穴密度近直线上升;压电极化效应也明显使界面处势阱加深变窄,并且使费米能级向势垒顶端移动,峰值浓度的位置向界面处移动;另外,价带带阶高度和受主杂质浓度对2DHG的影响较小.利用这层2DHG制作的p-Al_xGa_1-xN的欧姆接触,电流电压特性明显好于直接制作的电极,说明了2DHG可以显著改善p-Al_xGa_1-xN的欧姆接触性能.     

Reduction of driving voltage in organic light-emitting diodes with molybdenum trioxide in CuPc/NPB interface

A novel structure of organic light-emitting diode was fabricated by inserting a molybdenum trioxide (MoO₃) layer into the interface of hole injection layer copper phthalocyanine (CuPc) and hole transport layer N,N′-diphenyl-N,N′-bis(1-napthyl-phenyl)-1,1′-biphenyl-4,4′-diamine (NPB). It has the configuration of ITO/CuPc(10 nm)/MoO₃(3 nm)/NPB(30 nm)/ tris-(8-hydroxyquinoline) aluminum (Alq₃)(60 nm)/LiF(0.5 nm)/Al. The current density-voltage-luminance (J-V-L) performances show that this structure is beneficial to the reduction of driving voltage and the enhancement of luminance. The highest luminance increased by more than 40% compared to the device without hole injection layer. And the driving voltage was decreased obviously. The improvement is ascribed to the step barrier theory, which comes from the tunnel theory. The power efficiency was also enhanced with this novel device structure. Finally, “hole-only” devices were fabricated to verify the enhancement of hole injection and transport properties of this structure.     

Tandem organic light-emitting diode with molybdenum tri-oxide thin film interconnector layer

A 10-nm thickness molybdenum tri-oxide (MoO₃) thin film was used as the interconnector layer in tandem organic light-emitting devices (OLEDs). The tandem OLEDs with two identical emissive units consisting of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB)/tris(8-hydroxyquinoline) aluminum (Alq₃) exhibited current efficiency-current density characteristics superior to the conventional single-unit devices. At 20 mA/cm², the current efficiency of the tandem OLEDs using the interconnector layers of MoO₃ thin film was about 4.0 cd/A, which is about twice of that of the corresponding conventional single-unit device (1.8 cd/A). The tandem OLED showed a higher power efficiency than the conventional single-unit device for luminance over 1200 cd/m². The experimental results demonstrated that a MoO₃ thin film with a proper thickness can be used as an effective interconnector layer in tandem OLEDs. Such an interconnector layer can be easily fabricated by simple thermal evaporation, greatly simplifying the device processing and fabrication processes required by previously reported interconnector layers. A possible explanation was proposed for the carrier generation of the MoO₃ interconnector layer.     

High surface area thermally stabilized porous iron oxide/silica nanocomposites via a formamide modified sol-gel process

Iron oxide/silica (Fe:Si as 1:10 atomic ratio) composite materials have been prepared by calcination for 3 h at different temperatures (400-900 °C) of xerogel precursor obtained via a formamide modified sol-gel process. The process involved TEOS and iron(III) nitrate, nitric acid and formamide. Genesis of the composite materials from the xerogel precursor has been investigated by TGA, DSC, FTIR, XRD, SEM and EDX. Results indicated that all the calcined composites are mainly composed of amorphous iron oxide dispersed as finely divided particles in amorphous silica matrixes. Nitrogen adsorption/desorption isotherms revealed a reversible type I of isotherms indicative of microporosity. However, high S_BET surface area and microsporosity were observed for the calcined composite materials (e.g. S_BET = 625 m² g⁻¹, and S_αs = 556 m² g⁻¹ for the composite calcined at 400 °C). Formation of the porous texture was discussed in terms of the action of formamide, which enhanced strengthening of the silica gel network during evaporation of the more volatile components within the composite body during the drying process.     

Sonochemical preparation and characterization of photochromic MoO3 nanoparticles

The effect of ultrasound irradiation on molybdenum trioxide has been investigated. Under ultrasonic irradiation, spherical-like MoO₃ nanoparticles were obtained, while bulk-like MoO₃ nanoparticles were prepared without ultrasonic irradiation. The changes in the physicochemical properties of MoO₃ have been investigated using techniques such as X-ray powder diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and ultraviolet and visible spectroscopy (UV-vis). The physicochemical changes of MoO₃ due to ultrasound irradiation have been attributed to the sonochemical cavity collapse onto the molybdenum trioxide particles. The ultrasonically prepared particles can also greatly improve the photochromism efficiency.      

Electrospinning of complex oxide nanofibers

Electrospinning is a versatile process for drawing fibers of diverse materials including polymers, ceramics, and composites. We demonstrate here its application in the synthesis of complex ceramic oxide materials. The phase formation and morphology of BaTiO₃ nanofibers synthesized via electrospinning is investigated as a function of heat treatment conditions. Fully crystallized BaTiO₃ nanofibers with the perovskite structure are obtained after annealing at 750 °C and show an average grain size of about 30 nm. Tetragonal crystal structure of the fibers is indicated by XRD peak splitting (calculated c/a ratio=1.007), and confirmed by Raman spectroscopy. Furthermore, the advancement in heat treatment of the electrospun fibers yields single crystalline BaTiO₃ nanofibers with 50 nm in diameter and lengths up to 1 μm.     

Hydrothermal treatment of gadolinium oxide in presence of silica

Abstract

Hydrothermal and solvothermal (isopropanol) treatments of gadolinium oxide and silica were investigated under different pressure and temperature conditions. Products were examined by infrared vibrational spectroscopy (IR), x-ray powder diffraction (XRD) and thermal analysis (DTA, TG). Hexagonal gadolinium hydroxide was obtained in hydrothermal conditions, even in presence of silica, while no change was observed from isopropanolic medium treatment. Hydrothermally treated samples are more reactive as precursors for solid state reactions in inorganic synthesis.     

Studies of iron and iron oxide layers by electron spectroscopes

Thin iron oxide layers prepared “in situ” in the ultra high vacuum on polycrystalline iron substrate were investigated by electron spectroscopy methods—X-ray photoelectron spectroscopy (XPS) and elastic peak electron spectroscopy (EPES), using spectrometer ADES-400. The texture and the average grain size of the iron substrate foil have been examined by glancing angle X-ray diffraction (XRD). Qualitative and quantitative estimation of investigated oxide layers was made using (i) the relative sensitivity factor XPS method, (ii) comparison of binding energy shifts of Fe 2p photoelectron line and (iii) non-linear fitting procedure of Fe 2p photoelectron lines.Both, sputter-clean polycrystalline iron substrate and finally grown Fe_2.2O₃ layer, were investigated by the EPES method to measure the electron transport parameters used for quantitative electron spectroscopy, such as the electron inelastic mean free path (IMFP) values. The IMFPs were measured in the electron kinetic energy range 200-1000 eV with the Cu standard. The surface excitation parameters using Chen and Werner et al. approaches were evaluated and applied for correcting these IMFPs. The discrepancies between the evaluated parameters obtained using the above quantitative and qualitative approaches for characterising the iron oxide layers were discussed.     

Synthesis and photochromic properties of 1,3-diaminopropane-induced MoO3 powder

In the present work, molybdenum trioxide (MoO₃) powder with novel morphology and good photochromic properties was successfully synthesized via a facile chemical method. The capping agent 1,3-diaminopropane (DAP) was found to be vital in the formation of the morphology, as well as the good photochromism of MoO₃. The as-prepared products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Transmission electron microscopy (TEM), N₂ adsorption-desorption analysis (BET) and ultraviolet and visible spectroscopy (UV-vis).     

Direct current and impedance spectroscopic studies on MoO3 modified ZnPc/ITO Schottky diodes

We use experimental results of direct current and low signal impedance spectroscopy to investigate the conduction mechanism in organic semiconductor ZnPc. The experimental results demonstrate an increase in current and holes mobility by the introduction of a thin MoO₃ film at the ITO/ZnPc interface. This significantly improves the device performance. The improvement is explained in terms of the reduction in the effective barrier for charge transfer from ZnPc to ITO.     

Microwave-assisted synthesis and magnetic property of magnetite and hematite nanoparticles

Nanoparticles of magnetite (Fe₃O₄) and hematite (α-Fe₂O₃) have been prepared by a simple microwave heating method using FeCl₃, polyethylene glycol and N₂H₄·H₂O. The amount of N₂H₄·H₂O has an effect on the final phase of Fe₃O₄. The morphology of α-Fe₂O₃ was affected by the heating method. Crystalline α-Fe₂O₃ agglomerates were formed immediately at room temperature and most of these nanoparticles within agglomerates show the same orientation along [110] direction. After microwave heating, ellipsoidal α-Fe₂O₃ nanoparticles were formed following an oriented attachment mechanism. Both Fe₃O₄ and α-Fe₂O₃ nanoparticles exhibit a small hysteresis loop at room temperature.     

Effect of additives for higher removal rate in lithium niobate chemical mechanical planarization

High roughness and a greater number of defects were created by lithium niobate (LN; LiNbO₃) processes such as traditional grinding and mechanical polishing (MP), should be decreased for manufacturing LN device. Therefore, an alternative process for gaining defect-free and smooth surface is needed. Chemical mechanical planarization (CMP) is suitable method in the LN process because it uses a combination approach consisting of chemical and mechanical effects. First of all, we investigated the LN CMP process using commercial slurry by changing various process conditions such as down pressure and relative velocity. However, the LN CMP process time using commercial slurry was long to gain a smooth surface because of lower material removal rate (MRR). So, to improve the material removal rate (MRR), the effects of additives such as oxidizer (hydrogen peroxide; H₂O₂) and complexing agent (citric acid; C₆H₈O₇) in a potassium hydroxide (KOH) based slurry, were investigated. The manufactured slurry consisting of H₂O₂-citric acid in the KOH based slurry shows that the MRR of the H₂O₂ at 2 wt% and the citric acid at 0.06 M was higher than the MRR for other conditions.     

横向交、直流电流对蓝青铜K0.3MoO3的I-V特性的调制效应

通过I-V特性测量，研究了横向交、直流电流对蓝青铜K_0.3MoO₃中电荷密度波(CDW)动力学行为的影响.实验结果表明，无论是直流还是交流，随着横向调制电流的增大，CDW滑移的阈值电场均会相应地减小；但横向交流电流的调制效应较小，可能更接近本征的效应.考察了横向交流电流的调制效应与其频率的依赖关系. 关键词： 0.3MoO₃单晶')" href="#">K_0.3MoO₃单晶 电荷密度波 横向电流调制效应     

Structure and surface properties of praseodymium modified alumina

Mixed PrO₂-Al₂O₃ oxides with different PrO₂ content (1-20 wt.%) were prepared by wetness impregnation of γ-alumina with aqueous solution of praseodymium nitrate. The samples were characterized by different techniques, using surface adsorption-desorption of N₂ (S_BET), thermogravimetric analysis (TGA), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV-vis diffuse reflectance spectroscopy (DRS), temperature-programmed reduction (TPR) and temperature-programmed desorption of CO₂ (TPD-CO₂). TGA and XRD showed the presence of small praseodymium oxide species on the alumina surface. XPS and DRS detected electron deficient interaction between deposited praseodymium oxide and alumina. It was observed a lower reduction temperature for supported Pr oxide species compared to that of the bulk Pr₆O₁₁. TPD-CO₂ studies suggested that the deposition of Pr oxide on alumina leaded to increase of the basicity of mixed oxides.     

利用空间电荷限制电流方法确定三(8-羟基喹啉)铝的电子迁移率特性初步研究

材料的迁移率是其关键电学特性之一.有机材料迁移率的研究对于有机电致发光器件、 有机太阳电池、有机薄膜场效应晶体管性能的提高有重要的意义. 应用简单易行的空间电荷限制电流方法,对基于三(8-羟基喹啉)铝(Alq₃) 的四种单载流子器件电流密度-电压曲线特性进行研究, 根据空间电荷限制电流模型,拟合出Alq₃材料在四种器件中的零场电子迁移率和电场依赖因子,并且给出Alq₃电子迁移率随外加偏压的变化趋势. 实验结果表明,顶电极铝蒸镀到缓冲层氟化锂(1 nm)和Alq₃ (100 nm)的表面后, 可以明显改善Alq₃的零场迁移率和电场依赖因子. 认为产生这种现象的原因是氟化锂可以使铝和Alq₃发生络合反应, 形成Li⁺¹Alq^-1粒子,形成良好的欧姆接触,使得电子的注入效率大大提高.