Formation of palladium silicide by rapid thermal annealing

The formation of palladium silicide Pd₂Si by rapid thermal annealing of Pd layers on silicon has been studied as a function of annealing time (1–60s) in the temperature range 350–500 °C. It is shown that the results found for conventional furnace annealing (long duration, low temperature) can be extrapolated for rapid thermal annealing (shorter time, higher temperature) when taking into account the exact time dependence of the short temperature cycle. The growth rate is essentially diffusion limited and the activation energy is close to 1.1±0.1 eV. Silicide resistivity of about 30–40 cm was obtained for 200–400 nm thick Pd₂Si layers formed at 400 °C for a few seconds.     

Physical properties of vacuum evaporated CdTe thin films with post-deposition thermal annealing

This paper presents the physical properties of vacuum evaporated CdTe thin films with post-deposition thermal annealing. The thin films of thickness 500 nm were grown on glass and indium tin oxide (ITO) coated glass substrates employing thermal vacuum evaporation technique followed by post-deposition thermal annealing at temperature 450 °C. These films were subjected to the X-ray diffraction (XRD),UV-Vis spectrophotometer, source meter and atomic force microscopy (AFM) for structural, optical, electrical and surface morphological analysis respectively. The X-ray diffraction patterns reveal that the films have zinc-blende structure of single cubic phase with preferred orientation (111) and polycrystalline in nature. The crystallographic and optical parameters are calculated and discussed in brief. The optical band gap is found to be 1.62 eV and 1.52 eV for as-grown and annealed films respectively. The I–V characteristics show that the conductivity is decreased for annealed thin films. The AFM studies reveal that the surface roughness is observed to be increased for thermally annealed films.     

Synthesis of Ge nanocrystals by atom beam sputtering and subsequent rapid thermal annealing

Ge nanocrystals embedded in an SiO₂ matrix were prepared by the atom beam co-sputtering (ABS) method from a composite target of Ge and SiO₂. The as-deposited films were rapid thermally annealed at the temperatures 700 and 800 °C in nitrogen ambience. The structure of the films was evaluated by using X-ray diffraction (XRD) and Raman spectroscopy. XRD results reveal that as-deposited films are amorphous in nature whereas annealed samples show crystalline nature. Raman scattering spectra showed a peak of Ge–Ge vibrational mode shifted downwards to 297 cm^?1, presumably caused by quantum confinement of phonons in the Ge nanocrystals. Rutherford backscattering spectrometry has been used to measure the thickness and Ge composition of the composite films. Size variation of Ge nanocrystals with annealing temperature has been discussed. The advantages of ABS over other methods are highlighted.     

Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

We have deposited a 12 nm thick Ge layer on Si(1 0 0) held at 200 °C by thermal evaporation under high vacuum conditions. Upon subsequent thermal annealing in vacuum, self-assembled growth of nanostructural Ge islands on the Ge layer occurred. Atomic force microscopy (AFM) and grazing incidence small-angle X-ray scattering (GISAXS) were used to characterize such layers. GISAXS measurements evidenced the formation of cylinder shaped structures upon annealing at 700 °C, which was confirmed by AFM measurements with a very sharp tip. A Ge mass transport from the layer to the islands was inferred by X-ray reflectivity and an activation energy of 0.40 ± 0.10 eV for such a process was calculated.     

Effects of thermal oxidation temperature on vacuum evaporated tin dioxide film

In order to investigate the effect of thermal oxidation temperature on tin dioxide (SnO₂), tin dioxide films were obtained on quartz substrates by vacuum evaporation of tin metal. The films were characterized by X-ray diffraction (XRD) analyses, scanning electron microscopy (SEM), temperature dependent electrical resistivity measurement and optical absorption spectroscopy. The SEM images showed that the films are dense, continuous and are composed of nanoparticles and particle sizes are increased after thermal oxidation. From the X-ray measurement results, the films indicated two strong reflection peaks of tetragonal structure in the orientations of (1 0 1) and (2 0 0) at 2θ = 33.89° and 37.95°, respectively. Intensity of the peaks increased with increasing thermal oxidation temperature. We found resistivity values of about 10⁻⁴ Ω-cm. Optical absorption spectra of the films in the UV–Vis spectral range revealed that optical band gap (E_g) value of the films increases with increasing thermal oxidation temperature.     

Silicon epitaxy by pulsed laser annealing of evaporated amorphous films

Epitaxial growth of amorphous silicon layers deposited on Si-(100) substrates at room-temperature has been achieved by irradiation with very short laser pulses, as was evidenced from Rutherford backscattering analysis in combination with the channeling effect technique.     

The effects of thermal annealing in self-assembled Ge/Si quantum dots

The effects of thermal annealing in Si base self-assembled Ge dots have been investigated by Raman spectra and PL spectra. An obvious Raman frequency shift under different annealing temperature can be observed. There are two main effects during the annealing procession: one is the inter-diffusion of the Si and Ge quantum dots; the other is the relaxation of the elastic strain. With the calculated results, PL blue shift can be related to strain relaxation effects, and/or a general decrease of Ge content due to the Ge-Si intermixing.     

高温快速退火对重掺锑硅单晶中流动图形缺陷的影响

对大直径重掺锑硅单晶中流动图形缺陷（FPDs）进行了研究.利用高温快速退火工艺（RTA） ，将重掺锑硅片在N₂，Ar，H₂三种不同气氛下进行热处理，对退 火前后FPDs的密度变化进行了研究，分析了重掺锑硅单晶中FPDs在不同高温RTA过程中的热 稳定性.并从重掺杂原子锑与间隙氧之间的关系，分析了重掺锑硅片中FPDs在高温快速退火 工艺下的消除机制，认为重掺锑硅单晶中大量的锑原子，影响了硅片中间隙氧的浓度分布， 进而影响了原生微缺陷的形成及热行为. 关键词： 重掺锑硅单晶 快速退火（RTA） 流动图形缺陷（FPDs） 空洞缺陷     

Rapid thermal annealing of high dose arsenic-implanted silicon

A model for rapid thermal annealing of high dose arsenic-implanted silicon layers is proposed. The kinetics of arsenic clustering was taken into account. Assuming that all arsenic is initially electrically active, the clustering rate is found to be enhanced during the early stage of annealing in comparison with results reported for conventional furnace tempering [1]. An influence of a low temperature preannealing on the diffusion behaviour of arsenic has not been observed.     

Enhanced infrared response of Si base p-n diode with self-assembled Ge quantum dots by thermal annealing

The effects of thermal annealing in Si base p-n diode with self-assembled Ge dots stacked in eight layers structure are investigated. The effects of annealing are discussed based on the photovoltage spectra, the PL spectra and the Raman spectra. Three main effects occur after thermal annealing: the reduction of point defects, the intermixing of Si-Ge and the strain relaxation. The experimental result shows that 800 °C might be a suitable annealing temperature for photovoltaic applications.     

Densification study of ITO films during high temperature annealing by GISAXS

Three thermal routes were treated on the sol-gel ITO films, i.e. conventional thermal annealing (CTA), rapid thermal annealing (RTA) and thermal cycle annealing (TCA). The near surface and internal structures of films were characterized by grazing incidence small angle X-ray scattering (GISAXS) technique. It is found that slit-like pores show fractal structures laterally and the near surface is sparser with bigger pores. Ordered pore structure normal to the film appears when films are annealed at high heating rate. The shrinkage of pores is mainly owing to structural relaxation and diffusion during the superheating process. However, the supercooling process has no significant effect on the structures. Furthermore, CTA samples have the greatest porosity and surface roughness due to the prevailing crystallization as well as the coarsening procedure. However small pores inside the films are eliminated at low temperature.     

Introducing voids around the interlayer of AlN by high temperature annealing

Introducing voids into AlN layer at a certain height using a simple method is meaningful but challenging. In this work, the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic chemical vapor deposition. Then, the AlN template was annealed at 1700 ℃ for an hour to introduce the voids. It was found that voids were formed in the AlN layer after high-temperature annealing and they were mainly distributed around the AlN interlayer. Meanwhile, the dislocation density of the AlN template decreased from 5.26×10⁹ cm^-2 to 5.10×10⁸ cm^-2. This work provides a possible method to introduce voids into AlN layer at a designated height, which will benefit the design of AlN-based devices.     

循环氧化/退火制备GeOI薄膜材料及其性质研究

采用超高真空化学气相淀积系统在SOI(绝缘体上硅)衬底上生长了Si_0.82Ge_0.18外延层,通过循环氧化/退火工艺,制备出Ge组分从0.24到1的绝缘体上锗硅(SGOI)材料.采用高分辨透射电镜、拉曼散射光谱和光致发光谱表征了其结构及光学性质,对氧化过程中SiGe层中的Ge组分和应变的演变进行了分析.最后制备出11 nm厚的绝缘体上Ge材料(GeOI),具有完整的晶格结构和平整的界面.室温下观测到绝缘体上Ge直接带跃迁光致发光,发光峰值位于1540 nm,发光 关键词： GeOI 氧化 退火 光致发光谱     

Charge-storage effects in a metal-insulator-semi-conductor structure containing germanium nano-crystals formed by rapid thermal annealing of an electron-beam evaporated germanium layer

Charge-storage effects in a metal-insulator-semi-conductor device containing germanium (Ge) nano-crystals were investigated. The Ge nano-crystals were formed by rapid thermal annealing (RTA) of an evaporated, ultra-thin Ge layer at 1000 °C in argon. Capacitance–voltage measurements shows that the amount of electrical charge which can be stored in the device varies with the duration of the RTA treatment. The charge shows a maximum value for 200 s RTA treatment, and then decreases with longer annealing time up to 400 s. Atomic force microscopy analysis indicates that there is a correlation between the density of Ge nano-crystals in the devices, and the amount of electrical charge stored. For an RTA treatment of 300 s, capacitance–time measurements show a time dependence, which indicates a dispersive carrier relaxation. The retention time is dependent on the applied bias, and a maximum retention time of 115 s was observed at -7 V. The value of the stored electrical charges in the device decreases with increasing ambient temperature. A possible charging/discharging mechanism for the device was discussed to explain the capacitance–time measurements and the temperature stored charge results. PACS 81.07.Ta; 81.15.Jj; 73.63.Kv; 85.35.Be; 81.40.Ef     

Enhancement of saturation magnetization in Cr-ion implanted silicon by high temperature annealing

Magnetic properties and microstructure of Cr-implanted Si have been investigated by alternating gradient magnetometer (AGM), superconducting quantum interference device (SQUID) magnetometer, and transmission electron microscopy (TEM). p-Type (1 0 0) Si wafers were implanted at 200 keV at room temperature with a dosage of 1 × 10¹⁶ cm⁻² Cr ions and then annealed at 600-900 °C for 5 min. The effect of annealing on the structure and magnetic properties of Cr-implanted Si is studied. The as-implanted sample shows a square M-H loop at low temperature. Magnetic signal becomes weaker after short time annealing of the as-implanted sample at 600 °C, 700 °C, and 800 °C. However, the 900 °C annealed sample exhibits large saturation magnetization at room temperature. TEM images reveal that the implanting process caused amorphization of Si, while annealing at 900 °C led to partial recovery of the crystal. The enhancement of saturation magnetization can be explained by the redistribution and accumulation of Cr atoms in the vacancy-rich region of Si during annealing.     

Infrared spectra of carbon monoxide on evaporated nickel films: A low temperature thermal detection technique

A novel thermal detection scheme has been developed and combined with the techniques of rapid scan Fourier transform infrared spectroscopy to make sensitive, high resolution measurements of the vibrational spectrum of carbon monoxide molecules on evaporated nickel films. Adsorbed molecules are detected by attaching a germanium resistance thermometer to the sample, cooling the assembly to liquid helium temperatures, and measuring the temperature changes which occur when infrared radiation is absorbed. Spectra are presented for a range of CO coverages on an evaporated nickel film and a film damaged by ion bombardment. The positions, shapes, and intensities of the spectral lines from linear and bridge bonded CO molecules give information about the surface structure of the metal films and about the different ordered phases of the adsorbed molecules.     

Formation of ZnGa_2O_4 films by multilayer deposition and subsequent thermal annealing

The Ga203/ZnO multilayer films are deposited on quartz substrates by magnetron sputtering, the thickness values of Ga203 layers are in a range of 19 nm-2.5 nm and the thickness of ZnO layer is a constant of 1 nm. Formation of spinel ZnGa204 film is achieved via the annealing of the Ga203/ZnO multilayer film. The influences of original Ga203 sublayer thickness on the optical and structural properties of Ga203/ZnO multilayer films and annealed films are studied. With the decrease of the thickness of Ga203 sublayer, the optical band-gap of Ga203/ZnO multilayer film decreases, the intensity of UV emission diminishes and the intensity of violet emission increases. The annealed film displays the enlarged optical band gap and the quenched violet emission. UV fluorescence bands are observed from Ga203 and ZnGa204.     

Formation of Cu nanoparticles in GaAs using MeV ion implantation followed by thermal annealing

Analytical electron microscopy, high-resolution X-ray diffraction and combined Rutherford backscattering spectrometry and channeling experiments have been used to investigate the radiation damage and the effect of post-implantation annealing on the microstructure of GaAs(100) single crystals implanted with 1.00 MeV Cu⁺ ions to a dose of ≈ 3×10¹⁶ cm^-2 at room temperature. The experiments reveal the formation of a thick and continuous amorphous layer in the as-implanted state. Annealing up to 600 °C for 60 min does not result in the complete recovery of the lattice order. The residual disorder in GaAs has been found to be mostly microtwins and stacking fault bundles. The redistribution of implanted atoms during annealing results in the formation of nano-sized Cu particles in the GaAs matrix. The X-ray diffraction result shows a cube-on-cube orientation of the Cu particles with the GaAs lattice. The depth distribution and size of the Cu particles have been determined from the experimental data. A tentative explanation for these results is presented. Received: 15 February 1999 / Accepted: 18 February 1999 / Published online: 28 April 1999     

Influence of annealing temperature on the performance of Ge film and photon-counting imaging system

<正>Compared with the traditional image intensifier with phosphor screen readout,the photon-counting imaging detector with charge induction readout is more beneficial in several aspects(e.g.,good imaging properties and time resolution) to astronomy,reconnaissance,bioluminescence,and materials research.However, the annealing temperature during the tube-making process can affect the properties of the Ge film,and consequently impair the performance of the detector.Therefore,the influence of annealing temperature on Ge film and on the detector is studied in order to determine the crucial parameters.The Ge films are prepared on ceramic and quartz glass by the use of an electron gun.They are analyzed by scanning electron microscope(SEM),high-resistance meter,and X-ray diffraction(XRD).The results show that the optimum substrate and annealing temperature are ceramic plate and 250℃,respectively.     

Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate

Polycrystalline Ge_(1-x)Sn_x(poly-Ge_(1-x)Sn_x) alloy thin films with high Sn content( 10%) were fabricated by cosputtering amorphous GeSn(a-GeSn) on Ge(100) wafers and subsequently pulsed laser annealing with laser energy density in the range of 250 mJ/cm~2 to 550 mJ/cm~2. High quality poly-crystal Ge_(0.90) Sn_(0.10) and Ge_(0.82) Sn_(0.18) films with average grain sizes of 94 nm and 54 nm were obtained, respectively. Sn segregation at the grain boundaries makes Sn content in the poly-GeSn alloys slightly less than that in the corresponding primary a-GeSn. The crystalline grain size is reduced with the increase of the laser energy density or higher Sn content in the primary a-GeSn films due to the booming of nucleation numbers. The Raman peak shift of Ge-Ge mode in the poly crystalline GeSn can be attributed to Sn substitution, strain,and disorder. The dependence of Raman peak shift of the Ge-Ge mode caused by strain and disorder in GeSn films on full-width at half-maximum(FWHM) is well quantified by a linear relationship, which provides an effective method to evaluate the quality of poly-Ge_(1-x)Sn_x by Raman spectra.