Effect of uniaxial mechanical stress on Shubnikov-de Haas oscillations in hole channels of silicon field-effect transistors

A study is made of the effect of uniaxial mechanical stress on Shubnikov-de Haas oscillations in two-dimensional hole channels of silicon field-effect transistors. It is shown that the main effect of the stress is a shift of the node of the beats of the oscillations. This shift corresponds in the case of compression (tension) to an increase (decrease) of the spin splitting in a zero magnetic field. In the case of two filled size-quantization subbands a mechanical stress of either sign causes a small fraction of the carriers to be transferred from the lower into the upper subband. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 9, 630–635 (10 November 1996)     

Molecular dynamic simulation of stress evolution analysis in Cu nanowire under ultra-high strain-rate simple tension

This study analyses the behaviour of atoms associated with the propagation of stress waves in Cu nanowires (NWs) during uniaxial tensile deformation using molecular dynamic simulation. Maximum local stress (MLS) and virial stress (VS) methods are adopted to express dynamic stress in ?100? Cu NWs under tension. Simulation results indicated that the VS method enhances the averaging effect at ultra-high strain rates (above 10¹⁰ s^?1), leading to serious undervaluation of yield stress. However, the MLS method provides superior prediction results for the dynamic mechanical responses of NWs under tension at the ultra-high strain rate than does the VS. At a strain rate of 7 × 10¹⁰ s^?1, the double-peak stress phenomenon was observed in the stress–strain curve using the MLS method. The response time (T_rs) to wave propagation, observed at an ultra-high strain rate, is responsible for the accumulation of the elastic stress that is applied at the beginning of tensile loading in a short period, producing the first stress peak. Following plastic deformation, the encounter of the wavefronts with the reduced tensile stress causes the fully constructive interference effect in the middle of the tensile NWs, producing the second stress peak. The results explain the dynamic mechanical behaviour of NWs, contributing to future applications of subsonic manufacturing.     

Polarization-depolarization process in glass during percussion drilling

In addition to short individual high-frequency signals and their strings, which are well known and analysed, electromagnetic radiation measured during percussion drilling of glass showed a group of lengthy pulses usually appearing in pairs (denoted a-b). In order to understand their origin a polarization-depolarization process is invoked. Thus it is assumed that, during drilling, stress is accumulated in the sample, its increase being accompanied by a polarization increase, which is undetected by the equipment. When stress reaches a critical value, large crack propagation ('chip' fragmentation) begins, and a group a signal is emitted. Crack propagation causes stress and polarization relaxation, and the latter is detected as a group b signal.     

Residual stress determination in aluminium using electromagnetic acoustic transducers

The residual stresses in a shrink-fit specimen were measured ultrasonically, using shear-horizonal (SH) waves transmitted and received by noncontacting electromagnetic acoustic transducers. The presence of stress induces a small change in the velocity of the SH-waves. The difference in velocities of orthogonally polarized SH-waves (acoustic birefringence) was measured with a simple time-interval averaging system; this velocity difference can be related to the difference of principal stresses. The presence of material anisotropy (texture) in the specimen also causes relative velocity changes comparable to stress-induced changes. A simple method was used to remove the anisotropy-dependent component of the total relative velocity change, thereby allowing a determination of residual stress. This method consisted of measuring the birefringence in unstressed reference specimens and subtracting it from the birefringence measured at stressed locations. For the specimen used here, good agreement between theoretical and experimental values of stress was obtained.     

Features of the acoustic field of angle surface-wave transducers

The influence of process features in the fabrication of angle transducers (deviation from uniform distribution of mechanical stresses/strains over their transmitting/receiving surface) on the acoustic field of excited surface waves has been investigated. Calculation was carried out within the parabolic approximation by replacing a real angle transducer of surface waves with a linear source located on the surface of a waveguide (control object) with a nonuniform (cosine) distribution of stress amplitudes. The expressions for the stress (strains) at an arbitrary observation point for a point receiver (reflector) and for the stress averaged over the receiver plane are obtained in complex form. The coordinate dependences of the stress amplitudes and phases have been calculated for typical technological modes; the calculation results are presented as plots. It is shown that the effect of deviations from uniform distribution is strongest in the transition (from the near-to far-field) zone, where nonuniformity of displacements of 10–15% at the edges of a piezoelectric cell causes a change in their amplitude by 15–30% in comparison with uniform distribution; this must be taken into account when estimating diffraction corrections. The possibilities of experimentally verifying the degree of nonuniformity of the stress distribution over the angle-transducer surface are discussed.     

Interaction of Low-Intensity Laser Radiation with Blood and Its Components

The response of the blood of rabbits to the intravenous irradiation by a He-Ne laser radiation (λ = 632.8 nm) has been investigated by the UV-visible and IR absorption spectra of the whole blood, plasma, and erythrocyte mass. It has been established that hemoglobin is a primary photoacceptor absorbing low-intensity He-Ne-laser radiation. The exposure of blood to this radiation causes clearly defined changes in the IR and visible absorption spectra of the blood and erythrocytes. These spectral changes arise as a result of partial photodissociation of hemoglobin-ligand complexes in the process of absorption of laser radiation. It is suggested that photodissociation is a primary reaction that arises in blood exposed to a low-intensity laser radiation.__________Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 2, pp. 230–235, March–April, 2005.     

A comparison of two theories of acoustoelasticity

The presence of a plane stress field causes small changes in the phase velocities of orthogonally polarized SH waves. The (small) difference in phase velocities (birefringence) can be used for non-destructive stress measurement. However, material anisotropy can affect phase velocity to the same extent as stress.Two theories have been developed which account for the effect of both stress and anisotropy. The theory of Iwashimizu and Kubomura assumes isotropy in the third-order elastic moduli and anisotropy in second-order moduli. A different approach was taken by Okada, who assumed the existence of a matrix analogous to the index of the refraction matrix in optics.In this paper, we generalize the theory of Iwashimizu and Kubomura by retaining anisotropy in third-order moduli. We show how Okada's theory can be made to agree with this more general theory.We also compare the predictions of the various theories with birefringence data obtained from uniaxial tension tests on 2024-T351 aluminium specimens. Both the Okada theory and the theory of Iwashimizu and Kubomura gave good agreement with experiment.     

Magnetic stress as a driving force of structural distortions: the case of CrN

We show that the observed transition from rock salt to orthorhombic P(nma) symmetry in CrN can be understood in terms of stress anisotropy. Using local spin density functional theory, we find that the imbalance between stress stored in spin-paired and spin-unpaired Cr nearest neighbors causes the rock-salt structure to be unstable against distortions and justifies the observed antiferromagnetic ordering. This stress has a purely magnetic origin and may be important in any system where the coupling between spin ordering and structure is strong.     

NBT导致的深亚微米PMOS器件退化与物理机理

研究了深亚微米PMOS器件在负偏压温度(negative bias temperature, NBT) 应力前后的电流电压特性随应力时间的退化，重点分析了NBT应力对PMOS器件阈值电压漂移的影响，通过实验证明了在栅氧化层和衬底界面附近的电化学反应和栅氧化层内与氢相关的元素的扩散，是PMOS器件中NBT效应产生的主要原因.指出NBT导致的PMOS器件退化依赖于反应机理和扩散机理两种机理的平衡. 关键词： 深亚微米PMOS器件 负偏压温度不稳定性 界面态 氧化层固定正电荷     

Mathematical model for a Herschel-Bulkley fluid flow in an elastic tube

The constitution of blood demands a yield stress fluid model, and among the available yield stress fluid models for blood flow, the Herschel-Bulkley model is preferred (because Bingham, Power-law and Newtonian models are its special cases). The Herschel-Bulkley fluid model has two parameters, namely the yield stress and the power law index. The expressions for velocity, plug flow velocity, wall shear stress, and the flux flow rate are derived. The flux is determined as a function of inlet, outlet and external pressures, yield stress, and the elastic property of the tube. Further when the power-law index n = 1 and the yield stress τ ₀ → 0, our results agree well with those of Rubinow and Keller [J. Theor. Biol. 35, 299 (1972)]. Furthermore, it is observed that, the yield stress and the elastic parameters (t ₁ and t ₂) have strong effects on the flux of the non-Newtonian fluid flow in the elastic tube. The results obtained for the flow characteristics reveal many interesting behaviors that warrant further study on the non-Newtonian fluid flow phenomena, especially the shear-thinning phenomena. Shear thinning reduces the wall shear stress.     

Piezoelectric voltage of barium titanate with stabilized domains

In BaTiO₃ with unidirectional stabilized domains mechanical excitation causes a piezoelectric stress that is strongly asymmetrical with respect to the orientation of the electric field applied to the sample. The magnitude of the piezoelectric stress measured in the direction of polarization of the stabilized domains is usually greater than in the opposite direction. At a cyclic change in the weak electric field the dependence of the piezoelectric stress on this field is reflected in the shape of the asymmetric hysteresis loop.     

Iron as a risk factor in neurological diseases

In this review the properties of iron in various human brain structures (e.g. Substantia nigra, globus pallidus, hippocampus) were analyzed to assess the possibility of initiation of oxidative stress leading to such diseases as Parkinson’s and Alzheimer’s disease, and progressive supranuclear palsy. Our own studies with the use of Mössbauer spectroscopy, electron microscopy and enzyme-linked immuno-absorbent assay (ELISA) were confronted with other methods used in other laboratories. Our results suggest that hippocampus is the most fragile for oxidative stress structure in human brain (the death of nervous cells in hippocampus leads to Alzheimer’s disease). Changes in iron metabolism were also found in substantia nigra (the death of nervous cells of this structure produces Parkinson’s disease) and in globus pallidus (neurodegeneration of this structure causes progressive supranuclear palsy).     

Theoretical study of the structural properties of SiC(001)—Si-terminated surface and the formation of its STM images

We present theoretical study of structural and electronic properties of SiC(001)-p(2 × 1)-Si-terminated surface and the formation of its STM images. Ab initio calculations independently performed with the use of plane-wave and local-orbital basis have shown that the structure of this surface is built up by long symmetric silicon dimers, which agrees with the results of previous ab initio studies done by other authors. STM simulations show that the variation of the tunneling current along substrate surface very well reproduces the localization properties of occupied and unoccupied surface states (π, π*). We have found that the tensile stress applied along dimers axis causes the buckling of surface dimers and transfer of the charge between dimers atoms. This result suggests that the buckling of silicon surface dimers observed in LEED measurements might be caused by external stress. Presented at the X-th Symposium on Suface Physics, Prague, Czech Republic, July 11–15, 2005.     

Thermal stress cleaving of silicon wafer by pulsed Nd：YAG laser

The applied laser energy absorbed in a local area in laser thermal stress cleaving of brittle materials using a controlled fracture technique produces tensile thermal stress that causes the material to separate along the moving direction of the laser beam. The material separation is similar to crack extension, but the fracture growth is controllable. Using heat transfer theory, we establish a three-dimensional （3D） mathematical thermoelastic calculational model containing a pre-existing crack for a two-point pulsed Nd：YAG laser cleaving silicon wafer. The temperature field and thermal stress field in the silicon wafer are obtained by using the finite element method （FEM）. The distribution of the tensile stress and changes in stress intensity factor around the crack tip are analyzed during the pulse duration. Meanwhile, the mechanism of crack propagation is investigated by analyzing the development of the thermal stress field during the cleaving process.     

Dynamics and internal stress at the nanoscale related to unique thermomechanical behavior in polymer nanocomposites

A small amount of alumina nanoparticles in polymethylmethacrylate causes a sharp depression of the glass transition temperature (Tg) accompanied by a toughening of the composite. We investigated this phenomenon using multispeckle x-ray photon correlation spectroscopy. Measurements reveal a dynamic structure factor that has the form exp[-(t/taua)beta], with beta greater than 1. We show for the first time that beta(T) tracks the internal stress at the polymer-particle interface. The internal stress, which we propose arises due to the entropic penalty that the polymer faces in the presence of the nanoparticles, engenders temporally heterogeneous dynamics. In the jammed glassy state, we show that the dominant fast relaxation mode--taumax--aided by a weak dewetting interface relieves the stress and follows the variations in Tg.     

Closed form solutions for thermal stress field due to non-equilibrium heating during laser short-pulse irradiation

Non-equilibrium heating in the lattice sub-system results in high temperature gradients in the surface region. This in turn causes thermal stress waves propagating into the substrate material. In the present study, a closed form solution for thermal stress developed in the substrate material due to volumetric pulse heating is presented. The stress free and stress continuity boundary conditions at the surface are incorporated in the closed form solutions. It is found that thermal stress wave is tensile in the surface region and it becomes compressive at some depth below the surface for stress free condition at the surface; however, it remains compressive for the condition of stress continuity at the surface.     

Role of external impacts in nanostructured titanium alloys

Specifics of the effects of electroplastic deformation, ion implantation (II), and ultrasonic treatment (UST) on the structure and characteristics of coarse-grained (CG) and ultrafine-grained (UFG) VT1-0, VT6 and TiNi titanium alloys are investigated. The introduction of pulse current during cold rolling promotes increased deformability and causes stress jumps during tension that result from phase transformations or the electroplastic effect (EPE). It is shown that EPE is a structurally sensitive property dependent on the size of grains. Methods of surface II and UST change the phase composition and lead to additional structural refinement in layers with a thickness of 0.1–10 microns.     

Chain Straightening During Constant-Strain Relaxation in Melt-Crystallized Polyethylene Films

Abstract

The low-frequency Raman study of the chain-straightening process during stress relaxation in melt-crystallized polyethylene with molecular weight 10⁵ is presented. The application of tensile stress to low- and mid-drawn films causes the formation of “short” (as compared with crystal cores) straight-chain-segments (SCS). During the subsequent stress relaxation, while keeping the strain constant, the amount of SCS in the λ = 7 sample (λ is the draw ratio) gradually increases, while in the λ = 22 sample, a fraction of “short” SCS diminishes to zero within 3 days. This difference in the behavior of the low- and mid-drawn samples was ascribed to the difference in the contribution of the chain-breaking process. In the ultimately drawn sample (λ = 31), the length of the newly formed SCS is close to the crystal size, and they are situated, mainly, in the axially ordered interfibrillar phase. The formation of taut-tie molecules was not observed.     

Degradation characteristics and mechanism of PMOSFETs under NBT--PBT--NBT stress

Degradation characteristics of PMOSFETs under negative bias temperature--positive bias temperature--negative bias temperature (NBT--PBT--NBT) stress conditions are investigated in this paper. It is found that for all device parameters, the threshold voltage has the largest shift under the first NBT stress condition. When the polarity of gate voltage is changed to positive, the shift of device parameters can be greatly recovered. However, this recovery is unstable. The more severe degradation appears soon after reapplication of NBT stress condition. The second NBT stress causes in linear drain current to degrade greatly, which is different from that of the first NBT stress. This more severe parameter shift results from the wear out of silicon substrate and oxide interface during the first NBT and PBT stress due to carrier trapping/detrapping and hydrogen related species diffusion.     

Influence of stress and unidirectional field annealing on structural and magnetic performance of PtMn bottom spin-filter spin valves

The influence of unidirectional field annealing (UDA) and subsequent stress annealing (SA) on the structure and magnetic response of PtMn bottom spin-filter spin-valve sensors with a NiFeCr/NiFe seed layer was investigated. A time constant of 1.17 h for the FCC–FCT phase transition of the PtMn layer was obtained upon UDA at 265°C in an external magnet field of 13 kOe, which is consistent with 1.1 h observed for the GMR. A lower time constant of 0.7 h was determined for the exchange interaction field. The SA with similar conditions as in the manufacturing environment leads to a UDA time-dependent alteration of sensor performance. A SA up to 38 h causes a GMR value reduction, which becomes more pronounced with increasing UDA duration prior to SA. Furthermore, SA causes a progressive oxidation of the Ta cap layer; in contrast, the exchange field remains nearly unaffected, particularly for the sensors with 5 or 6 h UDA. From the point view of application, an UDA treatment of (5–6) h yields the optimal sensor performance for the finished read-write head.