Electronic properties of adsorbates on GaAs(001)-c(2x8)/(2x4)

A systematic experimental and theoretical study was performed to determine the causes of oxide-induced Fermi level pinning and unpinning on GaAs(001)-c(2 x 8)/(2 x 4). Scanning tunneling spectroscopy (STS) and density functional theory (DFT) were used to study four different adsorbates' (O(2), In(2)O, Ga(2)O, and SiO) bonding to the GaAs(001)-c(2 x 8)/(2 x 4) surface. The STS results revealed that out of the four adsorbates studied, only one left the Fermi level unpinned, Ga(2)O. DFT calculations were used to elucidate the causes of the Fermi level pinning. Two distinct pinning mechanisms were identified: direct (adsorbate induced states in the band gap region) and indirect pinnings (generation of undimerized As atoms). For O(2) dissociative chemisorption onto GaAs(001)-c(2 x 8)/(2 x 4), the Fermi level pinning was only indirect, while direct Fermi level pinning was observed when In(2)O was deposited on GaAs(001)-c(2 x 8)/(2 x 4). In the case of SiO on GaAs(001)-c(2 x 8)/(2 x 4), the Fermi level pinning was a combination of the two mechanisms.     

The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2 x 8)/(2 x 4)

The surface structures formed upon deposition of In2O and Ga2O by molecular beam epitaxy onto the arsenic-rich GaAs(001)-c(2 x 8)/(2 x 4) surface have been studied using scanning tunneling microscopy and density functional theory. In2O initially bonds, with indium atoms bonding to second layer gallium atoms within the trough, and proceeds to insert into or between first layer arsenic dimer pairs. In contrast, Ga2O only inserts into or between arsenic dimer pairs due to chemical site constraints. The calculated energy needed to bend a Ga2O molecule approximately 70 degrees, so that it can fit into an arsenic dimer pair, is 0.6 eV less than that required for In2O. The greater flexibility of the Ga2O molecule causes its insertion site to be 0.77 eV more exothermic than the In2O insertion site. This result shows that although trends in the periodic table can be used to predict some surface reactions, small changes in atomic size can play a significant role in the chemistry of gas/surface reactions through the indirect effects of bond angle flexibility and bond length stiffness.     

Identification of color centers on MgO(001) thin films with scanning tunneling microscopy

Localized electronic defects on the surface of a 4 monolayer (ML) thin MgO(001) film deposited on Ag(001) have been investigated by low-temperature scanning tunneling microscopy and spectroscopy. Depending on the location of the defect, we observe for the first time different defect energy levels in the band gap of MgO. The charge state of defects can be manipulated by interactions with the scanning tunneling microscope tip. Comparison with ground state energy levels of color centers on the MgO surface obtained from embedded cluster calculations corroborates the assignment of the defects to singly and doubly charged color centers.     

Diffusion of an Extra Ga Atom in GaAs(001)(2*4) Rich-As Surface

The potential energy surface for the migration of an extra Ga atom on the GaAs(001) β2(2×4) surface was mapped out by performing calculations at the level of analytical bond-order potential. Based on this calculations, we found some lower-energy sites for the adsorption of an extra Ga atom in the surface, which were in agreement with the experimental datMoreover, many possible pathways for an extra Ga atom diffusing in this surface were revealed. According to the relative energies of the possible pathways, the individual Ga adatoms preferably keep their diffusion in two pathways parallel to the As dimers. This result can be understood using the strain caused by the diffusing Ga atom in the pathways. In addition, the simulated kinetic processes of the extra Ga atom diffusing in different pathways at finite temperatures support the prediction from our calculated potential energy surface.     

Dissociation mechanism of 2-propanol on a Si(111)-(7x7) surface studied by scanning tunneling microscopy

Adsorption of 2-propanol, (CH3)2CHOH, on a Si(111)-7x7 surface was studied by scanning tunneling microscopy. (CH3)2CHOH adsorbs equally on the faulted and unfaulted half unit cells by forming Si-OCH(CH3)2 and Si-H on an adatom and rest atom pair. Si-OCH(CH3)2 is consecutively increased in each half unit cell, and the adsorption is saturated when every half unit cell has three Si-OCH(CH3)2, which corresponds to 0.5 of the adatom coverage. The sticking probability for the dissociation of (CH3)2CHOH is independent of the adatom coverage from 0 to 0.4, but it depends on coverage at higher than 0.4. By counting the darkened adatoms, Si-OCH(CH3)2 on the center adatom (m) and that on the corner adatom (n), it was found the m/n ratio is ca. 4 for the first dissociation of (CH3)2CHOH in virgin half unit cell, but it becomes ca. 1.9 and 1.8 when two and three Si-OCH(CH3)2 are contained in a half unit cell. This result reveals that the dissociation probability of (CH3)2CHOH at the adatom-rest atom pair site is influenced by the nearest Si-OCH(CH3)2 in the half unit cell.     

Electronic and structural properties of Ti vacancies on the (001) surface of TiS2: theoretical scanning tunneling microscopy images

Various defects--either bright or dark triangular defects--are observed on the (001) titanium disulfide surface by ultrahigh vacuum scanning tunneling microscopy. The experimental interpretations of the images available in the literature suggest that a fraction of Ti atoms could be displaced from the octahedral site they occupied to vacant sites of the crystal structure, leading to more or less correlated defects. In this paper, the authors have performed ab initio periodic linear combination of atomic orbitals-generalized gradient approximation (LCAO-GGA) calculations on (5x5) and (4x4) biperiodic supercells to model the electronic and geometrical involvements of Ti vacancy. The relaxed atomic structures of each system and the wave-function character of the defect states are carefully analyzed before the theoretical scanning tunneling microscopy images are generated within the Tersoff-Hamann approximation. The relaxed structure of the Ti vacancy shows an inward movement of the neighboring sulfur atoms at the surface. However, the occupied electronic states of the vacancy at the Fermi level are mainly developed on the atomic orbitals of the first sulfur neighbors at the surface, leading to bright triangular zones on the simulated image.     

A three-dimensional, noninterpenetrating metal--organic framework with the moganite topology: a simple (4(2)x6(2)x8(2))(4x6(4)x8)(2) net containing two kinds of topologically nonequivalent points

Self assembly of Cu(2+) with the multifunctional ligand 2-(4-pyridyl)thiazole-4-carboxylic acid (Pytac) affords the neutral 3D coordination polymer [Cu(3)(Pytac)(6)](H(2)O)(14) (hereafter, SZL-1), which has the rare moganite topology. The mineral moganite has a topology that is closely related to the well-known quartz topology, but the two topologies are differentiated by the number of topologically inequivalent nodes. Whereas only one kind of node is present in quartz, two types of topologically inequivalent nodes are present in moganite. The title compound, which has three vertices in its repeat unit, has two types of topologically inequivalent nodes with the overall vertex symbol (4(2)x6(2)x8(2))(4x6(4)x8)(2) corresponding to the moganite net. Prior to this report, few metal-organic framework materials (MOFs) have been found to contain more than one type of node, and SZL-1 is the first MOF with the moganite topology.     

Phonon-assisted second harmonic generation in As(1)(-)(x)Bi(x)Te(3)-CaBr(2)-PbBr(2) glasses

We have found experimentally the IR-induced second harmonic generation (SHG) in glasses possessing different degrees of electron-phonon interactions. For the investigations, we have chosen As(1)(-)(x)()Bi(x)Te(3)-CaBr(2)-PbBr(2) (0 < x <1) glasses. General formalism is based on consideration of fifth-order nonlinear optical susceptibility. The effect is observed in the middle IR region (spectral range 0.92-10.5 microm) where the value of the electronic energy gap is commensurable to the energies of actual quasi-phonons participating in the anharmonic (non-centrosymmetric) electron-phonon interactions. Varying the As/Bi ratio allows us to operate by the degree of electron-phonon anharmonicity in a wide spectral range. The second harmonic generation (SHG) output signal shows a correlation with IR-induced anharmonic phonon modes within the 1.5-4.8 microm spectral range. A maximum value of SHG is achieved at pump-probe delaying times of about 12.5-20 ps, which are typical for relaxation of the anharmonic electron-quasi-phonon subsystem. The maximally achieved value of the phonon-assisted optical susceptibility was about 6 x 10(-38) m(4)/V(4). The SHG signal was saturated for the IR pump power densities of about 1.73 GW/cm(2), corresponding to output SHG signals of about 9.8 x 10(-4) with respect to the fundamental ones. By varying the degree of electron-phonon anharmonicity and changing content of glasses, it was unambiguously shown that the IR-induced SHG signal correlates well with changes of oscillator strengths of IR-induced anharmonic phonon modes.     

Ti vacancies on the (001) surface of TiS2 detected by scanning tunneling microscopy: A combined experimental and theoretical study

Various defects – either bright or dark triangular defects – are observed on the titanium disulfide surface (001) by ultra high vacuum scanning tunneling microscopy. The experimental interpretations of the images available in the literature suggest that a fraction of Ti atoms could be displaced from the octahedral site they occupied to vacant sites of the crystal structure, leading to more or less correlated defects. In this paper, we have performed ab initio periodic LCAO-B3LYP calculations on a (5 × 5) biperiodic supercell to model the electronic and geometrical involvements of Ti vacancies and to generate the theoretical STM images within the Tersoff–Hamann approximation. The relaxed structure of the Ti vacancy shows an inward movement of the neighboring sulfur atoms at the surface. However, the occupied vacancy electronic states at the Fermi level are mainly developed on the atomic orbitals of the first S neighbors at the surface, leading to bright triangular zones on the simulated image.     

4-Mercaptopyridine on Au(111): a scanning tunneling microscopy and spectroscopy study

The adsorption of 4-mercaptopyridine (4MPy) molecules on reconstructed Au(111) is investigated by Scanning Tunneling Microscopy (STM) and Spectroscopy (STS) at low temperature and under ultra-high vacuum (UHV) conditions. As made visible by STM, at low coverage (<10%) 4MPy adsorbs preferentially at elbow sites of the Herringbone reconstruction and at step edges of the Au(111). Increasing coverage (but still <30%) results in formation of molecular chains followed, at even higher coverage, by a 3-dimensional growth. Detailed analysis of z-V spectroscopy (ramping the tunneling bias V while keeping the tunneling current constant) provides information on the bias dependent apparent height of a single 4MPy/Au(111) as well as on the local density of states (LDOS) of single and chain 4MPy molecules in comparison to the bare Au(111) surface revealing a significant shift of the lowest unoccupied molecular orbital (LUMO) towards lower energy for molecules within chains. Additionally, the data provide no evidence that for these samples prepared in UHV the adsorption of 4MPy on Au(111) requires mediating Au adatoms. Also, clear indications are given that the adsorption does not induce a strong reduction of the Au DOS close to its Fermi energy. Finally, in context of the apparent STM height of 4MPy molecules, the behavior of the differential barrier height Φ(diff)(V) = (?(z)?(V)I/?(V)I)(2) on bare Au(111) and 4MPy/Au(111) is analyzed and the corresponding experimental values are applied to recover the LDOS of the molecule for unoccupied states according to a previously published numerical recipe [B. Koslowski, H. Pfeifer and P. Ziemann, Phys. Rev. B, 2009, 80, 165419 and M. Ziegler, N. Néel, A. Sperl, J. Kr?ger, and R. Berndt, Phys. Rev. B, 2009, 80, 125402]. In this way, one obtains a spectrum comprising a constant DOS of the Shockley-like surface state of Au(111) and a Lorentzian line attributed to the LUMO of 4MPy.     

Structural and thermochemical chemisorption of CO2 on Li(4+x)(Si(1-x)Al(x))O4 and Li(4-x)(Si(1-x)V(x))O4 solid solutions

Different Li(4)SiO(4) solid solutions containing aluminum (Li(4+x)(Si(1-x)Al(x))O(4)) or vanadium (Li(4-x)(Si(1-x)V(x))O(4)) were prepared by solid state reactions. Samples were characterized by X-ray diffraction and solid state nuclear magnetic resonance. Then, samples were tested as CO(2) captors. Characterization results show that both, aluminum and vanadium ions, occupy silicon sites into the Li(4)SiO(4) lattice. Thus, the dissolution of aluminum is compensated by Li(1+) interstitials, while the dissolution of vanadium leads to lithium vacancies formation. Finally, the CO(2) capture evaluation shows that the aluminum presence into the Li(4)SiO(4) structure highly improves the CO(2) chemisorption, and on the contrary, vanadium addition inhibits it. The differences observed between the CO(2) chemisorption processes are mainly correlated to the different lithium secondary phases produced in each case and their corresponding diffusion properties.     

Ca(1)(-)(x)Na(2)(x)Al(2)B(2)O(7): a structure with tunable density of Na(+) vacancies

A series of samples with the composition Ca(1)(-)(x)Na(2)(x)Al(2)B(2)O(7) (0 < x < or = 1) was investigated and a hexagonal structure with unusually large range of homogeneity (at least from x = 0.01 to 0.95) was revealed. The hexagonal phase consists of [Al(2)B(2)O(7)](infinity)(2)(-) lamellae stacked along the c axis, as in CaAl(2)B(2)O(7) and Na(2)Al(2)B(2)O(7). Nevertheless, the configuration and stacking sequence of the [Al(2)B(2)O(7)](infinity)(2)(-) lamellae are different in these three structures. In the hexagonal structure of Ca(1)(-)(x)()Na(2)(x)()Al(2)B(2)O(7), Ca and half Na cations (Na1) statistically occupy the same crystallographic site which is located between the [Al(2)B(2)O(7)](infinity)(2)(-) lamellae, the other half Na cations (Na2) distribute in the planes bisecting the [Al(2)B(2)O(7)](infinity)(2)(-) lamellae. Depending on the composition, the site occupation factor of Na2 site can vary in the same range as x, leading to a tunable density of Na(+) vacancies in the structure. The AlO(4) tetrahedra and BO(3) triangles in the structure tilt in appropriate ways to improve the bond valence sum of Na2 cations which are not sufficiently bonded to the anions.     

Scanning tunneling microscopy of sulfur and benzenethiol chemisorbed on Ru(0001) in 0.1 M HClO4

In situ scanning tunneling microscopy (STM) combined with linear sweep voltammetry was used to examine spatial structures of sulfur adatoms (SA) and benzenethiol (BT) molecules adsorbed on an ordered Ru(0001) electrode in 0.1 M HClO4. The Ru(0001) surface, prepared by mechanical polishing and electrochemical reduction at -1.5 V (vs RHE) in 0.1 M HClO4, contained atomically flat terraces with an average width of 20 nm. Cyclic voltammograms obtained with an as-prepared Ru(0001) electrode in 0.1 M HClO4 showed characteristics nearly identical to those of Ru(0001) treated in high vacuum. High-quality STM images were obtained for SA and BT to determine their spatial structures as a function of potential. The structure of the SA adlayer changed from (2 x mean square root of 3)rect to domain walls to (mean square root of 7 x mean square root of 7)R19.1 degrees and then to disordered as the potential was scanned from 0.3 to 0.6 V. In contrast, molecules of BT were arranged in (2 x mean square root of 3)rect between 0.1 and 0.4 V, while they were disordered at all other potentials. Adsorption of BT molecules was predominantly through the sulfur headgroup. Sulfur adatoms and adsorbed BT molecules were stable against anodic polarization up to 1.0 V (vs RHE). These two species were adsorbed so strongly that their desorption did not occur even at the onset potential for the reduction of water in 0.1 M KOH.     

First-principles study of the adsorption of cesium on Si(001)(2 x 1) surface

First-principles calculations based on density functional theory-generalized gradient approximation method have been performed on cesium adsorption on Si(001)(2 x 1) surface. The optimized geometries and adsorption energies have been obtained and the preferred binding sites have been determined for the coverage (Theta) of one monolayer and half a monolayer. At Theta = 0.5 ML the most stable adsorption site is shown to be T3 site. At Theta = 1 ML two Cs atoms are adsorbed at HH and T3 sites, respectively. It was found that the saturation coverage of Cs for the Si(001)(2 x 1)-Cs surface is one monolayer instead of half a monolayer. This finding supports the majority of experimental observations but does not support recent coaxial impact collision ion scattering spectroscopy investigations [Surf. Sci. 531, L340 (2003)] and He(+) Rutherford backscattering spectroscopy studies [Phys. Rev. B 62, 4545 (2000)]. Mulliken charge and overlap population analysis showed that the Cs-Si bond is indeed ionic rather than polarized covalent as generally assumed for alkali metal (AM) on Si(001)(2 x 1) surface. Geometrical structure analysis seems to have limitations in determining the nature of AM-substrate bond. We also found that the silicon surface is metallic and semiconducting for the coverages of 0.5 and 1 ML, respectively.     

KNi3(AsO4)(As2O7)

The structure of the title compound, potassium trinickel arsenate diarsenate, is built up from corner‐ and edge‐sharing NiO₆ octahedra, AsO₄ tetrahedra and As₂O₇ groups, giving rise to a polyhedral connectivity which produces large tunnels running along the crystallographic [010] direction. The K⁺ cations are located within these tunnels.     

Photoelectron imaging of Ag(-)(H2O)x and AgOH(-)(H2O)y (x=1,2, y=0-4)

The photoelectron images of Ag(-)(H(2)O)(x) (x=1,2) and AgOH(-)(H(2)O)(y) (y=0-4) are reported. The Ag(-)(H(2)O)(1,2) anionic complexes have similar characteristics to the other two coinage metal-water complexes that can be characterized as metal atomic anion solvated by water molecules with the electron mainly localized on the metal. The vibrationally well-resolved photoelectron spectrum allows the adiabatic detachment energy (ADE) and vertical detachment energy (VDE) of AgOH(-) to be determined as 1.18(2) and 1.24(2) eV, respectively. The AgOH(-) anion interacts more strongly with water molecules than the Ag(-) anion. The photoelectron spectra of Ag(-)(H(2)O)(x) and AgOH(-)(H(2)O)(y) show a gradual increase in ADE and VDE with increasing x and y due to the solvent stabilization.     

Rectangular (3 x 2 square root of 3) superlattice of a dodecanethiol self-assembled monolayer on Au(111) observed by ultra-high-vacuum scanning tunneling microscopy

A rectangular (3 x 2 radical3) surface lattice for long-term-annealed dodecanethiol self-assembled monolayers on Au(111) is observed by ultra-high-vacuum scanning tunneling microscopy. The new lattice has the same density and a unit cell of the same size as the well-known c(4 x 2) reconstruction. In contrast, it does not show hexagonal symmetry but rather a sort of thiol pairing, leading to a shift in the binding position of every second molecule. The described structure is believed to be an intermediate phase close to desorption.