High power Q-switched TEM<Subscript>00</Subscript> Nd:YVO<Subscript>4</Subscript> laser with self-adaptive compensation of thermal lensing effect

a high power dual-end-pumped Nd:YVO₄ laser with adaptive compensation of thermal lensing effect by adjusting HR mirror along the optical axis was proposed. In Q-switching operation at 70 kHz, the laser worked at different pump power (from 90 W to 70 W) with stable beam quality (M ² ∼ 1.15) and high output power (from 39 to 28.4 W), corresponding to the absorbed-output conversion efficiency of 55%. In the meantime, the pulse duration was increased from 24 to 31.7 ns. At various repetition rate from 60 to 100 kHz, the beam quality factors were all measured less than 1.2.     

Compact diode-directly-pumped passively mode-locked TEM<Subscript>00</Subscript> Nd:GdVO<Subscript>4</Subscript> laser at 1341 nm using a semiconductor saturable absorber mirror

We report on a compact 880-nm diode-directly-pumped passively mode-locked TEM₀₀ Nd:GdVO₄ laser at 1341 nm with a semiconductor saturable absorber mirror (SESAM) for the first time. Under the absorbed pump power of 14.6 W, the maximum output power of 1.27 W was obtained at the repetition rate of 85.3 MHz with the pulse width of 45.3 ps, corresponding to an optical-optical efficiency of 8.8% and the slope efficiency of 33.3%, respectively. The beam quality factor was measured to be M ² = 1.18, indicating a TEM₀₀ mode.     

High-efficiency 17 W, 80 MHz repetition rate,passively mode-locked TEM<Subscript>00</Subscript> Nd:YAG oscillator pumped at 885 nm

We report on a passively mode-locked TEM₀₀ Nd:YAG oscillator with the beam quality at M ² = 1.1 by a semiconductor saturable absorber mirror under 885 nm laser diode direct pumping for the first time. A maximum average output power of 17 W at a repetition rate of 80 MHz with 39 ps pulse width was obtained under the absorbed pump power of 38 W, corresponding to an optical-optical efficiency of 44% and the slope efficiency of 69%, respectively.     

Passive picosecond and femtosecond mode-locking laser action of Yb<Superscript>3+</Superscript>:LuYSiO<Subscript>5</Subscript>

Efficient passive mode locking of a diode-pumped Yb³⁺:LuYSiO₅ (Yb:LYSO) laser is first demonstrated in experiment using a semiconductor saturable absorber mirror (SESAM), to the best of our knowledge. A stable pulse train with a repetition rate of 101 MHz is generated. The average output power of 2.13 W and the pulse duration of 3.9 ps. With a pair of SF10 uncoated prisms for dispersion compensation, we obtained pulses as short as 780 fs with center wavelength around 1042 nm, the average output power of 1.03 W and the peak power of 13.1 kW.     

Diode-pumped high-efficiency passively Q-switched Yb:CaYAlO<Subscript>4</Subscript> laser

We experimentally demonstrated a high-efficiency passively Q-switched Yb:CaYAlO₄ (Yb:CYA) laser based on a semiconductor-saturable absorber mirror (SESAM), and the output characteristics of the laser including the average output power, repetition frequency, pulse duration, pulse energy and pulse peak power were investigated by adopting output mirrors with different transmittances. When the transmittance of the output mirror was 5% and the pump power was set at about 7.76 W, a maximum average output power of as high as 2.480 W was achieved with a slope efficiency and light-to-light efficiency of the Q-switched Yb:CYA laser of up to 37.1% and 31.2%, respectively.     

High slope efficiency and low threshold in a laser-diode-pumped passively Q-switched ion-implanted Nd:YVO<Subscript>4</Subscript> planar waveguide laser with GaAs saturable absorber

A passively Q-switched waveguide laser, to our knowledge, has been firstly demonstrated in Nd: YVO₄ crystal formed by 3 MeV Si⁺ ion implantation at a dose of 1 × 10¹⁵ ions/cm² at room temperature, in which GaAs was used as saturable absorber. The dependences of the average output power, pulse width, pulse repetition rate on absorbed pump power have been measured at different output plane mirror transmissions. At an absorbed pump power of 78.8 mW and output transmission of 20%, the shortest pulse width of 3.88 ns was obtained, corresponding to the peak power and single pulse energy of 212 W and 0.82 μJ, respectively. The threshold pump power was as low as 40 mW, and the slope efficiency was about 64.5% when the absorbed pump power was lower than 70 mW.     

A high efficiency Ho:YAlO<Subscript>3</Subscript> laser pumped by Tm:YLF laser with a Volume Bragg Grating

We report a CW Ho:YAlO₃ (Ho:YAP) laser at room temperature pumped by a Tm:YLF laser with a Volume Bragg Grating (VBG) instead of the conventional mirror. The Ho:YAP laser operated at 2117.9 nm with output power 9.12 W. The optical-to-optical conversion efficiency is 60.4% and slope efficiency is 71.2%. The Ho:YAP output wavelength is centered at 2117.9 nm with bandwidth of about 1 nm. The beam quality factor is M ² ∼ 1.29 measured by the traveling knife-edge method.     

Diode-pumped passively mode-locked Nd:CaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> laser

We have experimentally demonstrated a diode-pumped passively mode-locked Nd:CaNb₂O₆ laser for the first time to our best knowledge. With a semiconductor saturable absorber mirror (SESAM) as a passive mode locker, the laser generated stable mode-locked pulses with pulse duration of 17.3 ps and repetition rate of 88.4 MHz. With a singe-emitter laser diode pumping, the maximum average output power of the mode-locked laser was 0.843 W, with a slope efficiency of 23%. The experimental results show the Nd:CaNb₂O₆ crystal is a promising laser gain medium for picosecond pulse generation.     

Millijoule intracavity OPO driven by a passively Q-switched Nd:YVO<Subscript>4</Subscript> laser with AlGaInAs quantum-well saturable absorber

We originally demonstrate the use of an AlGaInAs periodic quantum-well absorber to achieve a quasi-continuous-wave (QCW) diode-pumped passively Q-switched Nd:YVO₄ laser with an intracavity optical parametric oscillator (OPO). With a diode-pumping energy of 35 mJ, the output pulse energy and the pulse width at 1573 nm are found to be 1.58 mJ and 26 ns, respectively. The pulse repetition rate can be up to 100 Hz with the overall OPO beam quality M² factor to be better than 1.5.     

Q-switched Ho:YAlO<Subscript>3</Subscript> laser pumped by Tm:YLF laser at room temperature

A Q-switched high efficient Ho:YAlO₃ (Ho:YAP) laser pumped by a diode-pumped Tm:YLF laser at room-temperature is realized. The maximum output energy reaches 1.58 mJ under the repetition frequency of 5 kHz, when the incident pump power is 15.6 W. The pulse width is 22 ns. The wavelength is 2118 nm when the transmission of output coupler is 30%. The beam quality factor is M ² ∼ 1.39 measured by the traveling knife-edge method.     

High average power and short pulse duration continuous wave mode-locked Nd:GdVO<Subscript>4</Subscript> laser with a semiconductor absorber mirror

Passive mode locking of a solid-state Nd:GdVO₄ laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd³⁺ doped Nd:GdVO₄ crystal is used to mitigate the thermal lens effect of the laser crystal at a high pump power. The maximum average output power is up to 6.5 W, and the pulse duration is as short as 6.2 ps. The optic-to-optic conversion efficiency is 32.5% and the repetition rate is about 110 MHz.     

Continuous-wave passively mode-locked Nd:YVO<Subscript>4</Subscript>/KTP green laser with a semiconductor saturable absorber mirror

A diode-pumped passively mode-locked low-doped Nd:YVO₄ green laser with a semiconductor saturable absorber mirror (SESAM) and an intracavity frequency-doubling KTP crystal is demonstrated. In order to efficiently release the thermal effect, a low-doped Nd:YVO₄ crystal with the Nd³⁺ concentration of 0.1 at % is employed as the gain medium. The maximum average output power of 3.1 W at 532 nm with a repetition rate of 102 MHz is obtained under the pump power of 25 W, corresponding to an optical conversion efficiency of 12.4%. The 532 nm mode locked pulse width is estimated to be approximately 6.1 ps.     

Compact passively Q-switched green laser with periodically poled MgO:LiNbO<Subscript>3</Subscript>

Passively Q-switched green output with Cr⁴⁺:YAG as saturable absorber and PPMgLN as the frequency doubling crystal was realized in a compact diode end-pumped Nd:YVO₄ laser. The green light output power, pulse width, pulse repetition rate, pulse energy and peak power with three Cr⁴⁺:YAG of different initial transmissions were investigated. The maximum average output power was 1.2 W at the pump power of 4.0 W and the maximum conversion efficiency was 30% with the Cr⁴⁺:YAG of 90% initial transmission. The maximum pulse energy and minimum pulse width were 10.9 μJ and 12 ns with the Cr⁴⁺:YAG of 75% initial transmission.     

7 W laser diode end-pumped Nd:YVO<Subscript>4</Subscript> passively mode-locking laser with a semiconductor saturable absorber mirror

A powerful and stable LD end pumped Nd:YVO₄ passively mode-locking oscillator by SESAM was demonstrated. At the pumping power of 30 W, 7 W output was obtained with repetition rate of 79.5 MHz and pulse duration of 15 ps. The beam quality factors M ² were measured to be 1.30 and 1.33, respectively.     

888 nm pumped 1342 nm Nd:YVO<Subscript>4</Subscript> oscillator Kerr-lens mode-locked using cascaded second-order nonlinearities

We report on a parametric Kerr-lens mode-locked 888 nm pumped Nd:YVO₄ 1342 nm oscillator using cascaded second-order nonlinearities in LBO. Stable ps-pulse-operation was achieved. For an output coupling of T=25% high average output power of 6.5 W, emitting Fourier-limited pulses with a duration of 10 ps was reached. By changing the output coupling to T=10%, we achieved much shorter pulses with a pulse duration of 4 ps for less lower average power of 4.8 W. The beam was diffraction limited with an M ² parameter better than <1.05.     

Resonator effects of Ar<Stack><Subscript>2</Subscript><Superscript>+</Superscript></Stack> ionic excimer pumped by electron beam

The third continuum of argon from 200 to 270 nm is obtained by electron beam pumping argon. With the front mirror and the rear mirror, the resonator effects are observed at 240 and 220 nm. Compared with the intensity of fluorescence, the intensity near 240 nm increases more than 10 times when the resonator is formed. In order to explain the origin of the continuum, the kinetic model on Ar₂⁺ and Ar₂²⁺ ionic excimers pumped by electron beam is built and calculated. Based on the theoretical results, the Ar₂⁺ ionic excimer should be responsible for the continuum around 240 nm.     

A 20.1 W solid-state laser pumped by 887 nm with high efficiency and TEM<Subscript>00</Subscript> mode

High efficiency, TEM₀₀ mode, high repetition rate laser pumped by 887 nm is reported. 20.1 W output laser emitting at 1064 nm is achieved in a 0.3 at % Nd-doped Nd:YVO₄, which absorbs pumping light of 30.7 W at 887 nm. The opto-optic efficiency and the slope efficiency are 65.5 and 88.5%, respectively. The stable Q-switching operation worked well at 100 kHz and the beam quality is near diffraction-limit with M² factor measured as M² ≈ 1.2. And the pulse waveform is analyzed in this paper.     

Passively Q-Switched and mode-locked Nd:YVO<Subscript>4</Subscript> laser with sandwich structured wallpaper graphene oxide absorber

We report on a passively Q-switched and mode-locked Nd:YVO₄ laser using a novel low-cost wall-paper graphene oxide absorber. Sandwich structured wallpaper graphene oxide absorber was constructed by a high transmission mirror, a piece of wallpaper graphene oxide absorber and a reflective mirror. The average output power of 310 mW of passively Q-switched and mode-locked laser was successfully achieved. The repetition rate and pulse width of the Q-switched envelope were 213 kHz and 770 ns, respectively. The repetition rate of passively mode-locked pulse within the Q-switched envelope was 81.3 MHz with the pulse energy of 3.8 nJ.     

Experimental study on doubly QML Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with AO modulator and central SESAM

By using double-mixed crystal Nd:Lu_0.15Y_0.85VO₄ as laser medium, a diode-pumped doubly Q-switched and mode-locked (QML) Nd:Lu_0.15Y_0.85VO₄ laser with acousto-optic (AO) modulator and central semiconductor saturable absorption mirror (SESAM) is realized for the first time. The Q-switched envelope modulation depth is nearly 100%.The average output power and the pulse width of the Q-switched envelope etc. for different AO modulator repetition rates have been measured. The experimental result show that Nd:Lu_0.15Y_0.85VO₄ crystal is an excellent laser medium for doubly QML lasers.     

Diode-pumped Nd<Superscript>3+</Superscript>:YAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> laser at 1338 nm

A high-power diode -pumped Nd³⁺:YAl₃(BO₃)₄ (Nd:YAB) laser emitting at 1338 nm is described. At the incident pump power of 9.8 W, as high as 734 mW of continuous-wave (CW) output power at 1338 nm is achieved. The slope efficiency with respect to the incident pump power was 9.0%. To the best of our knowledge, this is the first demonstration of such a laser system. The output power stability over 60 min is better than 2.6%. The laser beam quality M ² factor is 1.21.