Electrical transport in rings of single-wall nanotubes: one-dimensional localization

We report low-temperature magnetoresistance (MR) measurements on rings of single-wall carbon nanotubes. Negative MR characteristic of weak one-dimensional localization is clearly observed from 3.0 to 60 K, and the coherence length L(varphi) is obtained as a function of temperature. The dominant dephasing mechanism is identified as electron-electron scattering. Below 1 K, we observe a transition from weak to strong localization, and below 0.7 K a weak antilocalization is induced by spin-orbit scattering.     

Competition between weak localization and antilocalization in topological surface states

A magnetoconductivity formula is presented for the surface states of a magnetically doped topological insulator. It reveals a competing effect of weak localization and weak antilocalization in quantum transport when an energy gap is opened at the Dirac point by magnetic doping. It is found that, while random magnetic scattering always drives the system from the symplectic to the unitary class, the gap could induce a crossover from weak antilocalization to weak localization, tunable by the Fermi energy or the gap. This crossover presents a unique feature characterizing the surface states of a topological insulator with the gap opened at the Dirac point in the quantum diffusion regime.     

Weak-localization magnetoresistance and valley symmetry in graphene

Because of the chiral nature of electrons in a monolayer of graphite (graphene) one can expect weak antilocalization and a positive weak-field magnetoresistance in it. However, trigonal warping (which breaks p-->-p symmetry of the Fermi line in each valley) suppresses antilocalization, while intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore conventional negative magnetoresistance. We show this by evaluating the dependence of the magnetoresistance of graphene on relaxation rates associated with various possible ways of breaking a "hidden" valley symmetry of the system.     

Spin-orbit coupling,antilocalization, and parallel magnetic fields in quantum dots

We investigate antilocalization due to spin-orbit coupling in ballistic GaAs quantum dots. Antilocalization that is prominent in large dots is suppressed in small dots, as anticipated theoretically. Parallel magnetic fields suppress both antilocalization and also, at larger fields, weak localization, consistent with random matrix theory results once orbital coupling of the parallel field is included. In situ control of spin-orbit coupling in dots is demonstrated as a gate-controlled crossover from weak localization to antilocalization.     

Al0.22Ga0.78N/GaN二维电子气中的弱局域和反弱局域效应

通过磁输运测量研究了Al_0.22Ga_0.78N/GaN二维电子气的电子相干散射中的弱局域和反弱局域化现象.在外加弱磁场的情况下，该系统表现出正-负磁阻的变化，说明在Al_0.22Ga_0.78N/GaN异质结中存在晶体场引起的电子自旋-轨道散射.同时讨论了二维电子气中不同的散射时间对温度的依赖关系，实验得到的非弹性散射时间与温度成反比，表明非弹性散射机理主要来源于小能量转移的电子-电子散射. 关键词： 二维电子气 弱局域 磁阻     

Anomalous temperature dependence of the dephasing time in mesoscopic kondo wires

We present measurements of the magnetoconductance of long and narrow quasi-one-dimensional gold wires containing magnetic iron impurities in a temperature range extending from 15 mK to 4.2 K. The dephasing rate extracted from the weak antilocalization shows a pronounced plateau in a temperature region of 300-800 mK, associated with the phase breaking due to the Kondo effect. Below the Kondo temperature, the dephasing rate decreases linearly with temperature, in contradiction with standard Fermi-liquid theory. Our data suggest that the formation of a spin glass due to the interactions between the magnetic moments is responsible for the observed anomalous temperature dependence.     

Quantum corrections to resistance of microblock tellurium at ultralow temperatures under phonon freezing conditions

The low-temperature magnetoresistance of bulk tellurium samples with a microcrystalline structure is investigated. At ultralow temperatures T ≤ 1 K, an anomalous positive magnetoresistance (APMR), viz. the antilocalization effect, is observed. It is shown that this effect can be explained using the weak localization theory. The characteristic parameters of the theory are determined. It is concluded that charge carriers produce a predominant effect on the phase breakdown time in the APMR mode of elastic scattering from structure defects, which leads to intervalley transitions without spin flip.     

Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements

The various scattering times of two-dimensional electron gas were investigated in modulation-doped Al_0.22Ga_0.78N/GaN quantum wells by means of magnetotransport measurements. The ratio of transport and quantum scattering times, τ_t/τ_q∼1, shows that the dominant mobility-limiting mechanisms are short-range scattering potentials. The low-field magnetoresistance shows the weak antilocalization and localization phenomenon from which the spin-orbit scattering and inelastic scattering times are obtained. The inelastic scattering time is found to follow the T⁻¹ law, indicating that electron-electron scattering with small energy transfer is the dominant inelastic process.     

Role of orbital dynamics in spin relaxation and weak antilocalization in quantum dots

We develop a semiclassical theory for spin-dependent quantum transport to describe weak (anti)localization in quantum dots with spin-orbit coupling. This allows us to distinguish different types of spin relaxation in systems with chaotic, regular, and diffusive orbital classical dynamics. We find, in particular, that for typical Rashba spin-orbit coupling strengths, integrable ballistic systems can exhibit weak localization, while corresponding chaotic systems show weak antilocalization. We further calculate the magnetoconductance and analyze how the weak antilocalization is suppressed with decreasing quantum dot size and increasing additional in-plane magnetic field.     

Weak localization in ferromagnetic (Ga,Mn)as nanostructures

We report on the observation of weak localization in arrays of (Ga,Mn)As nanowires at millikelvin temperatures. The corresponding phase coherence length L phi is typically between 100 and 200 nm at 20 mK. Strong spin-orbit interaction in the material is manifested by a weak antilocalization correction around zero magnetic field.     

Weak antilocalization and interaction-induced localization of Dirac and Weyl Fermions in topological insulators and semimetals

Weak localization and antilocalization are quantum transport phenomena that arise from the quantum interference in disordered metals.At low temperatures,they can give distinct temperature and magnetic field dependences in conductivity,allowing the symmetry of the system to be explored.In the past few years,they have also been observed in newly emergent topological materials,including topological insulators and topological semimetals.In contrast from the conventional electrons,in these new materials the quasiparticles are described as Dirac or Weyl fermions.In this article,we review our recent efforts on the theories of weak antilocalization and interaction-induced localization for Dirac and Weyl fermions in topological insulators and topological semimetals.     

Weak antilocalization in thin films of the Bi<Subscript>2</Subscript>Te<Subscript>2.7</Subscript>Se<Subscript>0.3</Subscript> solid solution

A technology has been developed for the preparation of thin films of the Bi₂Te_2.7Se_0.3 solid solution through the thermal evaporation in a vacuum using the “hot-wall” method. The high quality of the thin films thus prepared has been confirmed by the X-ray diffraction and Raman scattering data. The electron transport has been investigated over wide ranges of temperatures (1.4–300 K) and magnetic fields (up to 8 T). It has been assumed that the observed weak antilocalization is associated with the dominant contribution from the surface states of a topological insulator. The dephasing length has been estimated.     

Classical Effects in the Weak-Field Magnetoresistance of InGaAs/InAlAs Quantum Wells

We observe an unusual behavior of the low-temperature magnetoresistance of the high-mobility two-dimensional electron gas in InGaAs/InAlAs quantum wells in weak perpendicular magnetic fields. The observed magnetoresistance is qualitatively similar to that expected for the weak localization and antilocalization but its quantity exceeds significantly the scale of the quantum corrections. The calculations show that the obtained data can be explained by the classical effects in electron motion along the open orbits in a quasiperiodic potential relief manifested by the presence of ridges on the quantum well surface.     

Gate-voltage control of chemical potential and weak antilocalization in Bi₂Se₃

We report that Bi?Se? thin films can be epitaxially grown on SrTiO? substrates, which allow for very large tunablity in carrier density with a back gate. The observed low field magnetoconductivity due to weak antilocalization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest a much suppressed bulk conductivity at large negative gate voltages and a possible role of surface states in the WAL phenomena.     

Electron transport properties of three-dimensional topological insulators

We review experimental advances in the study of the electron transport in three-dimensional topological insulators with emphasis on experiments that attempted to identify the surface transport. Recent results on transport properties of topological insulator thin films will be discussed in the context of weak antilocalization and electron-electron interactions. Current status of gate-voltage control of the chemical potential in topological insulators will also be described.     

Anomalous polarization of Raman scattering spectra from porous silicon

A violation of the polarization selection rules for Raman scattering is observed in porous silicon. This effect is caused by a weak disorientation of the quasi-one-dimensional silicon wires, with the crystal structure of the wires themselves and the macroscopic homogeneity of the material in optical experiments remaining intact. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 2, 95–100 (25 January 1998)     

Anomalous spin-orbit effects in a strained InGaAs/InP quantum well structure

There is currently a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We report results of a study of spin-orbit effects in a strained InGaAs/InP quantum well. The spin-orbit relaxation time, determined from the weak antilocalization effect, was found to depend nonmonotonically on gate voltage. The spin-orbit scattering rate had a maximum value of 5×10¹⁰ s^?1 at an electron density of n=3×10¹⁵ m^?2. The scattering rate decreased from this for both increasing and decreasing densities. The smallest measured value was approximately 10⁹ s^?1 at an electron concentration of n=6×10¹⁵ m^?2. This behavior could not be explained by either the Rashba or the bulk Dresselhaus mechanisms but is attributed to asymmetry or strain effects at dissimilar quantum well interfaces.     

Transport properties of topological insulators films and nanowires

The last several years have witnessed the rapid developments in the study and understanding of topological insulators. In this review, after a brief summary of the history of topological insulators, we focus on the recent progress made in transport experiments on topological insulator films and nanowires. Some quantum phenomena, including the weak antilocalization, the Aharonov-Bobm effect, and the Shubnikov-de Haas oscillations, observed in these nanostructures are described. In addition, the electronic transport evidence of the superconducting proximity effect as well as an anomalous resistance enhancement in topological insulator/superconductor hybrid structures is included.     

A systematic study of the electron mobility in V-shaped quantum wires at low temperatures

We present a systematic study of the electron mobility in V-shaped AlGaAs/GaAs quantum wires taking into account the impurity (background, remote and interface) and the acoustic-phonon scattering. The electron scattering rates are calculated for wires with electron concentrations up to 10⁶ cm⁻¹ and temperatures up to 40 K by using Fermi’s golden rule. The effects of the interface roughness scattering and the alloy scattering are also discussed. The energy eigenstates and eigenvalues of the system under study are calculated using a finite difference method. We analyze the importance of each scattering mechanism on the mobility of several quantum wires of different qualities as a function of the electron concentration and the temperature.