Stability of the magnetic domain structure of nanoparticle thin films against external fields

We investigate the effect of external magnetic fields on the magnetic structure of thin films from magnetic nanoparticles (MNP) with dipolar interaction. Such fields are present, for example, if samples are scanned with magnetic probes. Numerical simulations and experimental magnetic force microscopy (MFM) studies are presented. Numerically, we have calculated the magnetization pattern of single-layer and multilayer MNP thin films. The calculations show that unperturbed single-layer MNP films have an in-plane orientation of the magnetization with a flux-closure-domain pattern. An external field generated by a point dipole above the film induces locally an out-of-plane configuration of the magnetization. In the corresponding MFM images, the domain pattern in the film is erased and a stripe-like contrast enhancement at the edges appears. Multilayer films are found to be more robust against external fields than monolayers.     

Magnetization reversal observed by the deflection of magnetic actuator

A magnetic actuator consisting of a silicon oxide microcantilever and a silicon oxide plate deposited on ferromagnetic multilayer thin films is fabricated using electron beam lithography and electron beam evaporation, and placed in various magnetic fields to observe its flexure. The magnetic actuator is bent by magnetic torque produced by ferromagnetic multilayer thin films under an external magnetic field owing to the fabrication of a highly sensitive microcantilever and the design of elliptic ferromagnetic thin films with high magnetic shape anisotropy. The magnetic actuator is placed in four kinds of magnetic field directions to investigate the diversity of deflections; the angles between the easy axis of the ferromagnetic multilayer thin films and the direction of the external magnetic field are 90°, 70°, 45° and 20°.     

Electromagnetic field perturbation by an internal void in a conducting cylinder excited by a wire loop

A thin prolate spheroidal void in an infinite conducting circular cylinder is used to model an internal flaw in a wire rope. The rope is excited by an electric ring current which is a model for a thin solenoid or multi-turn wire loop. The anomalous external fields are computed from the induced electric and magnetic dipole moments of the void. For this type of excitation, the induced axial magnetic dipole moment is the dominant contributor to the scattered field. The results have application to nondestructive testing of wire ropes.     

p型半导体金刚石膜的磁阻效应

在p型硅(100)衬底上,采用衬底负偏压微波等离子体CVD方法进行了p型异质外延金刚石膜的生长.用O₂等离子体刻蚀技术将金刚石膜刻蚀成长条形,利用四探针法在0—5T的磁场范围内测量了样品的磁阻.实验结果表明,p型异质外延金刚石膜可以产生较大的磁阻.在Fuchs-Sondheimer(F-S)薄膜理论的基础上考虑晶格散射、杂质散射和表面散射,通过求解Boltzmann方程,利用并联电阻模型研究了p型异质外延金刚石膜的磁阻效应,给出了磁阻和金刚石膜厚度、迁移率、空穴密度及磁场的关系.讨论了表面散射和价带形变对p型异质外延金刚石膜磁阻的影响,初步解释了p型异质外延金刚石膜产生较大磁阻的原因 关键词： 金刚石膜 异质外延 磁阻效应 电导率     

Polar exit angle distributions of slow H<Superscript>+</Superscript> ions,related to the presence of a regular domain structure,calculated within the diffuse scattering approximation upon interaction of ions with the sample surface

The angular distributions of slow H ions scattered from the surface of a magnetic film with a stripe domain structure have been calculated. The calculations were performed within the models of specular and diffuse scattering upon collisions of ions with surface. It is shown that the magnetic fields of the stripe domain structure block the ions scattered at small exit angles. It is established that, within the more adequate model of diffuse scattering, the anisotropy of interaction of ions with the magnetic field of the stripe structure manifests itself in a wider angular range.     

Magnetic force microscopy study of domain structures in magnetic films

Magnetic force microscopy is used to investigate two different types of samples: thin metal films and ferrite garnet films. It is pointed out for garnet films that magnetic force microscopy allows us only to judge the domain structure of surface layers. Problems associated with conducting measurements in external magnetic fields, the effect of the magnetic field of the probe on the investigated domain structure, and using magneto-polarized optics in combination with magnetic force microscopy are considered.     

Ultrawide frequency linewidth of the permeability spectra of FeCoN thin film sputtered on the flexible substrate

Analysis shows that it is possible to make use of dispersed magnetic ripple fields to obtain a wide frequency linewidth of permeability spectra of soft magnetic thin films. As-sputtered FeCoN thin film sputtered on flexible Kapton substrate is studied as an example. It has ultrawide frequency linewidths of its resonance peaks in the permeability spectra, compared to its counterpart deposited on Si substrate. The frequency linewidth of FeCoN on Kapton substrate decreases with external magnetic field, showing a different field dependence from that of FeCoN on Si substrate. The ultrawide frequency linewidth and its decrease with external magnetic field are ascribed to the dispersed magnetic ripple fields caused by the flexible substrate. This work shows that the flexible substrate is effective in obtaining a wide frequency linewidth of the permeability spectra of soft magnetic thin films.     

Angular dependence of the magnetic-field driven superconductor-insulator transition in thin films of amorphous indium-oxide

A significant anisotropy of the magnetic-field driven superconductor-insulator transition is observed in thin films of amorphous indium-oxide. The anisotropy is largest for more disordered films which have a lower transition field. At higher magnetic fields the anisotropy reduces and even changes sign beyond a sample specific and temperature independent magnetic field value. The data are consistent with the existence of more than one mechanism affecting transport at high magnetic fields.     

A new strip line broad-band measurement evaluation for determining the complex permeability of thin ferromagnetic films

In the present paper, a new method for determining the frequency dependent complex permeability of thin magnetic films, designed for measurements up to 5 GHz, is presented. The measurement technique described here was carried out by a one-port permeameter, which is based on a short-circuited strip line. The complex permeability was deduced by a new analytical approach from the measured reflection coefficient of a strip line (S₁₁) with and without a ferromagnetic film material inside. An adaptive error correction was applied in the measurement procedure. The spectral permeability of thin FeCoAlN films with an in-plane uniaxial anisotropy of μ₀^*H_a=3.2 mT induced by annealing at CMOS temperatures in a static magnetic field was investigated. The measurements were compared with a theoretical model taking the Landau–Lifshitz and eddy current theories into account. A resonant frequency of about 1.6 GHz was observed.     

Probing the anisotropy constants of SmCo5 and PrCo5 by Hall resistance measurements in pulsed high magnetic fields up to 47 T

In order to assess the anisotropy constants of highly anisotropic thin film samples with anisotropy fields well above 10 T, Hall resistance measurements were conducted in pulsed magnetic fields. These measurements also deliver the anomalous Hall data, which are proportional to the perpendicular magnetisation. This specific approach combines the high field values obtainable by pulsed fields with a measurement technique sensitive enough to be applied to thin film samples. Two epitaxial Rare Earth-Cobalt thin films with large in-plane uniaxial magnetocrystalline anisotropy at room temperature were studied. The resulting anisotropy fields and constants are discussed with respect to measurements on single crystals and similar films investigated in quasi-static magnetic fields well below the anisotropy field. The present technique proved to be very valuable to highly anisotropic samples, as the approach to saturation is fully monitored and the data thus provides a more extended view on the hard axis magnetisation process.     

Electrical transport of spin-polarized carriers in disordered ultrathin films

Slow, nonexponential relaxation of electrical transport accompanied by memory effects has been induced in quench-condensed ultrathin amorphous Bi films by the application of a parallel magnetic field. This behavior, which is very similar to space-charge limited current flow, is found in extremely thin films well on the insulating side of the thickness-tuned superconductor-insulator transition. It may be the signature of a collective state that forms when the carriers are spin polarized at low temperatures and in high magnetic fields.     

多层光学薄膜矢量散射的理论与实验研究

本文提出一种用以计算多层光学薄膜的矢量散射波场分布的新方法。并应用统计学原理,详细讨论了不同膜层界面的互相关模型及相应的光学薄膜散射特性。推导中应用了薄膜光学的惯用概念,所得公式亦比较简洁。还实验测量了光学薄膜的散射波场分布,并根据所建立的模型确定了所测光学薄膜的界面互相关特性。 关键词：     

磁场中的超导膜

本文将文献[1]的理论推广到较厚的超导膜。首先采用能隙是常数的模型,借助于Schrief-fer方法,导出磁场中超导膜的补偿方程和电流方程。利用所得的方程,研究了均匀外磁场对金属膜超导性质的影响,讨论了超导膜在磁场中的相变,给出了确定超导膜的能隙、磁矩、平衡临界场H_c,以及分别相应于过冷和过热区域边界的临界场H_(c1)和H_(c2)的一般公式。所有这些表达式,在局域极限下,化为Гинзбург-Ландау理论的相应结果;在薄膜情形下,回到文献[1]的结果,文中对一般情形下的非局域效应作了具体的讨论。     

Ferromagnetism modulation by phase change in Mn-doped GeTe chalcogenide magnetic materials

In this work, an effective method to modulate the ferromagnetic properties of Mn-doped GeTe chalcogenide-based phase change materials is presented. The microstructure of the phase change magnetic material Ge_1?x Mn _x Te thin films was studied. The X-ray diffraction results demonstrate that the as-deposited films are amorphous, and the crystalline films are formed after annealing at 350 °C for 10 min. Crystallographic structure investigation shows the existence of some secondary magnetic phases. The lattice parameters of Ge_1?x Mn _x Te (x = 0.04, 0.12 and 0.15) thin films are found to be slightly different with changes of Mn compositions. The structural analysis clearly indicates that all the films have a stable rhombohedral face-centered cubic polycrystalline structure. The magnetic properties of the amorphous and crystalline Ge_0.96Mn_0.04Te were investigated. The measurements of magnetization (M) as a function of the magnetic field (H) show that both amorphous and crystalline phases of Ge_0.96Mn_0.04Te thin film are ferromagnetic and there is drastic variation between amorphous and crystalline states. The temperature (T) dependence of magnetizations at zero field cooling (ZFC) and field cooling (FC) conditions of the crystalline Ge_0.96Mn_0.04Te thin film under different applied magnetic fields were performed. The measured data at 100 and 300 Oe applied magnetic fields show large bifurcations in the ZFC and FC curves while on the 5,000 Oe magnetic field there is no deviation.     

Anomalous pinning behaviour in thin Nb3Ge films

Results concerning the pinning behaviour of thin Nb₃Ge films prepared by sputtering and evaporation onto hot sapphire substrates are reported. The validity of scaling laws in the range of magnetic fields up to 13 T has been verified. We have found that the pinning dependence in evaporated films obeys these laws, however, the maximum of the volume pinning force occurs at constant magnetic field value for sputtered Nb₃Ge films. A different microstructure of these two types of films is made responsible for the anomalous pinning behaviour described.     

Experiments on the reflection of cold atoms from magnetic thin films

We report the results from a series of experiments in which ferromagnetic thin films were used as atom mirrors for laser-cooled rubidium atoms released from a magneto-optical trap. The thin films were made of cobalt and lanthanum calcium manganite (LCMO) with thicknesses between 20 and 300 nm. The magnetic domains in these thin films have a periodic structure where the spatial period is of the order of the thickness of the film, and the field decays exponentially above the film over a length scale comparable to the domain size. Thus, the neutral atoms reflect off these films from distances comparable to the thickness of the film, resulting in modification of the reflectivity due to the competition between the repulsive magnetic force and the attractive short-range forces such as van der Waals and Casimir forces. The smoothness of the atom mirror is also modified due to the proximity of the magnetic domains. The reflectivity is sensitive to the domain structure and size, which can be modified in LCMO by applying a modest external magnetic field. In this paper, we discuss the evaluation of the thin films as magnetic mirrors for atom optics, and the measurement of the van der Waals force with an accuracy of about 15%, using cobalt thin films. We also discuss some preliminary results on the temperature-dependent reflectivity for atoms near the ferromagnetic transition at 250 K in the LCMO film, and on the domain dynamics and relaxation.     

Ginzberg-Landau理论对超导薄膜的适用性

本文指出虽然三十年来Ginzberg-Landau理论(以下简称G-理论)被人们广泛地用于描述超导薄膜的临界场,而且它还是描述强耦合超导薄膜临界场的唯一理论,但G-L关于薄膜临界场的理论不仅一直未得到实验证明,而且它既不能用于描述结晶态的弱耦合超导薄膜的临界场,也不适用于描述强耦合超导薄膜的临界场。本文还提出了一个在薄膜极限下定域的新判据:ξ<<λ,ξ<关键词：     

应变对钴铁氧体电子结构和磁性能影响的第一性原理研究

尖晶石型钴铁氧体(CoFe₂O₄)因具有良好的电磁性质, 广泛应用于计算机技术、航空航天及医学生物等领域. 特别是钴铁氧体薄膜在磁电复合材料中具有良好的应用前景. 本文基于密度泛函理论的第一性原理平面波赝势法, 结合广义梯度近似, 通过采用更接近于实验上外延生长的二维应变模型, 研究了钴铁氧体薄膜的结构稳定性、电子结构和磁性能. 结果表明: 在二维应变作用下, 反尖晶石结构的钴铁氧体比正尖晶石结构的稳定, 但是与平衡基态相比, 两者能量差减小, 这表明在应变作用下, 八面体晶格中的Co²⁺离子与四面体晶格中的Fe³⁺离子更容易进行位置交换, 形成混合型结构的钴铁氧体; 同时随着应变的增大, 钴铁氧体的能带带隙减小, 晶格中的原子磁矩发生变化, 但总磁矩变化不明显. 关键词： 尖晶石型钴铁氧体 第一性原理 电子结构 磁性能     

Precessional frequency of ferromagnetic elements: Influence of magnetic domain width

A model is presented that semi-quantitatively describes the dependence of precessional frequency on magnetic domain width in ferromagnetic thin film elements. With decreasing domain width an increase of precessional frequency at zero-bias field by a factor of about 1.5 is found experimentally and from the calculations. The modelled value of change of precessional frequency is in agreement with the experimental results. The simple model offers the opportunity to relate the drastic effects of domain structure on the dynamic magnetic properties of soft-magnetic thin films by a straightforward approach.     

Magnetic properties of field-annealed FeCo thin films

Fe₅₀Co₅₀ thin films with thickness of 30 and 4 nm have been produced by rf sputtering on glass substrates, and their surface has been observed with atomic force microscopy (AFM) and magnetic force microscopy (MFM); MFM images reveal a non-null component of the magnetization perpendicular to the film plane. Selected samples have been annealed in vacuum at temperatures of 300 and 350 °C for times between 20 and 120 min, under a static magnetic field of 100 Oe. DC hysteresis loops have been measured with an alternating gradient force magnetometer (AGFM) along the direction of the field applied during annealing and orthogonally to it. Samples with a thickness of 4 nm display lower coercive fields with respect to the 30 nm thick ones. Longer annealing times affect the development of a harder magnetic phase more oriented off the film plane. The field applied during annealing induces a moderate magnetic anisotropy only on 30 nm thick films.