Magnetoresistance of La<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> epitaxial films grown on a substrate with low lattice mismatch

The structure, electrical resistivity, and magnetoresistance of La_0.67Sr_0.33MnO₃ heteroepitaxial films (120-nm thick) practically unstrained by lattice mismatch with the substrate were studied. A strong maximum of negative magnetoresistance of ≈27% (for μ₀H = 4 T) was observed at T ≈360 K. While the magnetoresistance decreased monotonically in magnitude with decreasing temperature, it was still in excess of 2% at 150 K. For T < 250 K, the temperature dependence of the electrical resistivity ρ of La_0.67Sr_0.33MnO₃ films is fitted well by the relation ρ = ρ₀ + ρ ₁(H)T^2.3, where ρ₀ = 1.1×10^?4 Ω cm, ρ₁(H = 0) = 1.8×10^?9 Ω cm/K^2.3, and ρ₁(μ₀H = 4 T)/ρ₁(H = 0) ≈0.96. The temperature dependence of a parameter γ characterizing the extent to which the electrical resistivity of the ferromagnetic phase of La_0.67Sr_0.33MnO₃ films is suppressed by a magnetic field (μ ₀H = 5 T) was determined.     

Electrical and Optical Properties of Cu<Subscript>2</Subscript>Zn(Fe,Mn)SnS<Subscript>4</Subscript> Films Prepared by Spray Pyrolysis

We have analyzed the electrical and optical properties of Cu₂ZnSnS₄, Cu₂FeSnS₄, and Cu₂MnSnS₄ films with the p-type electrical conductivity, which were prepared by spray pyrolysis at temperature TS = 290°C using 0.1 M aqueous solutions of salts CuCl₂ · 2H₂O, ZnCl₂ · 2H₂O, MnCl₂ · 2H₂O, FeCl₃ · 6H₂O, SnCl₄ · 5H₂O, and (NH₂)CS. The energy parameters have been determined from analyzing the electrophysical properties of the films using the model of energy barriers at grain boundaries in polycrystalline materials, and the thickness of intercrystallite boundaries has been estimated. The extent of the influence of the hole concentration p₀ in the bulk of crystallites and height E _b of the energy barriers between grains on the electrical conductivity has been determined. The optical bandgap width for thin Cu₂Zn(Fe,Mn)SnS₄ films has been calculated based on analyzing the spectral dependences of the absorption coefficient.     

Antiferromagnetic Resonance in GdB<Subscript>6</Subscript>

The electron spin resonance has been measured for the first time both in the paramagnetic phase of the metallic GdB₆ antiferromagnet (T_N = 15.5K) and in the antiferromagnetic state (T < T_N). In the paramagnetic phase below T* ~ 70 K, the material is found to exhibit a pronounced increase in the resonance linewidth and a shift in the g-factor, which is proportional to the linewidth Δg(T) ~ ΔH(T). Such behavior is not characteristic of antiferromagnetic metals and seems to be due to the effects related to displacements of Gd³⁺ ions from the centrosymmetric positions in the boron cage. The transition to the antiferromagnetic phase is accompanied by an abrupt change in the position of resonance (from μ₀H₀ ≈ 1.9 T to μ₀H₀ ≈ 3.9 T at ν = 60 GHz), after which a smooth evolution of the spectrum occurs, resulting eventually in the formation of the spectrum consisting of four resonance lines. The magnetic field dependence of the frequency of the resonant modes ω₀(H₀) obtained in the range of 28–69 GHz is well interpreted within the model of ESR in an antiferromagnet with the easy anisotropy axis ω/γ = (H ₀ ² +2H_AH_E)^1/2, where H_E is the exchange field and H_A is the anisotropy field. This provides an estimate for the anisotropy field, H_A ≈ 800 Oe. This value can result from the dipole?dipole interaction related to the mutual displacement of Gd³⁺ ions, which occurs at the antiferromagnetic transition.     

Electrophysical parameters of <Emphasis Type="Italic">c</Emphasis>-oriented Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> films with a low concentration of antistructural defects

Epitaxial c-oriented Bi₂Te₃ films 1.2 μm in thickness are grown by the hot wall method for a low supersaturation of the vapor phase over the surface of mica substrates. The hexagonal unit cell parameters a = 4.386 Å and c = 30.452 Å of the grown films almost coincide with the corresponding parameters of stoichiometric bulk Bi₂Te₃ crystals. At T = 100 K, the Hall concentration of electrons in the films is on the order of 8 × 10¹⁸ cm^?3, while the highest values of the thermoelectric coefficient (α ≈ 280 μV K^?1) are observed at temperatures on the order of 260 K. Under impurity conduction conditions, conductivity σ of the films increases upon cooling in inverse proportion to the squared temperature. In the temperature range 100–200 K, thermoelectric power parameter α²σ of Bi₂Te₃ films has values of 80–90 μW cm^?1 K^?2.     

High-pressure induced magnetoresistance in <Emphasis Type="Italic">p</Emphasis>-InAs:Mn and <Emphasis Type="Italic">p</Emphasis>-CdGeAs<Subscript>2</Subscript>:Mn

The baric (P ≤ 5GPa) and magnetic-field (H ≤ 5 kOe) dependences of the transverse magnetore-sistance Δρ _xx /ρ₀ have been measured for p-InAs (R _H = 22.5 cm³/C, ρ = 0.15 Ω cm) and the new ferromag-netic semiconductor p-CdGeAs₂ (R _H = 5 cm³/C, ρ = 0.62 Ω cm), doped with a magnetic impurity (Mn), near the temperature T = 297 K. The dependences Δρ _xx /ρ₀ (P, H) for p-InAs:Mn and p-CdGeAs₂:Mn exhibit a magnetoresistive effect with an increase in pressure, and a pressure-induced magnetoresistance hysteresis is observed in p-CdGeAs₂:Mn with a pressure drop.     

Conduction through localized states in a single crystal of the TlGa<Subscript>0.5</Subscript>Fe<Subscript>0.5</Subscript>Se<Subscript>2</Subscript> alloy

Layered single crystals of the TlGa_0.5Fe_0.5Se₂ alloy in a dc electric field at temperatures ranging from 128 to 178 K are found to possess variable-range-hopping conduction along natural crystal layers through states localized in the vicinity of the Fermi level. The parameters characterizing the electrical conduction in the TlGa_0.5Fe_0.5Se₂ crystals are estimated as follows: the density of states near the Fermi level N_F = 2.8 × 10¹⁷ eV^?1 cm^?3, the spread in energy of these states ΔE = 0.13 eV, the average hopping length R_av = 233 Å, and the concentration of deep-lying traps N _t = 3.6 × 10¹⁶ cm^?3.     

Relaxation phenomena in TlGa<Subscript>0.99</Subscript>Fe<Subscript>0.01</Subscript>Se<Subscript>2</Subscript> single crystals

The relaxation electronic phenomena occurring in TlGa_0.99Fe_0.01Se₂ single crystals in an external dc electric field are investigated. It is established that these phenomena are caused by electric charges accumulated in the single crystals. The charge relaxation at different electric field strengths and temperatures, the hysteresis of the current-voltage characteristic, and the electric charge accumulated in the TlGa_0.99Fe_0.01Se₂ single crystals are consistent with the relay-race mechanism of transfer of a charge generated at deep-lying energy levels in the band gap due to the injection of charge carriers from the electric contact into the crystal. The parameters characterizing the electronic phenomena observed in the TlGa_0.99Fe_0.01Se₂ single crystals are determined to be as follows: the effective mobility of charge carriers transferred by deep-lying centers μ_f=5.6×10^?2 cm²/(V s) at 300 K and the activation energy of charge transfer ΔE=0.54 eV, the contact capacitance of the sample C _c =5×10^?8 F, the localization length of charge carriers in the crystal d _c =1.17×10^?6 cm, the electric charge time constant of the contact τ=15 s, the time a charge carrier takes to travel through the sample t _t =1.8×10^?3 s, and the activation energy of traps responsible for charge relaxation ΔE _σ = ΔE _Q = 0.58 eV.     

Improved Scaling of the Magnetic Heat Capacity in La<Subscript>0.85</Subscript>Ag<Subscript>0.15</Subscript>MnO<Subscript>3</Subscript> Manganite

The heat capacity in a La_0.8 Ag_0.15 MnO₃ manganite has been measured near the Curie temperature T _C in applied magnetic fields up to 26 kOe to study the scaling critical behavior and to obtain the universality class. The conventional scaling fails in application to the manganites with a hysteresis and the strong sensitivity of T _C to a magnetic field. However, the application of the improved scaling procedure designed by us allows yielding the good scaling the magnetic heat =0.23 capacity in La_0.85Ag_0.15MnO₃, which may belong to a new universality class for systems with the strong spin-orbital coupling of t _2g -electrons, namely, double -Heisenberg with the critical exponent of the heat capacity α = ?0.23 and the critical exponent of the correlation radius v=0.7433. This new universality class is consistent with the crystal, magnetic and orbital symmetries for the La_0.85Ag_0.15MnO₃. Scaling failure in the vicinity of T _C in the range of t/H ^1/2ν ≈ [?0.033;0.024] is understood by finite-size and other disordering effects when T →T _C. It is remarkable that finite-size effect is consistent with grain size, L ≈ 50 μm, in the La_0.85Ag_0.15MnO₃. The correlation radius, Lt ^ν ≈ 30.28 Å, estimated from the finite-size effect is of the same order of magnitude with the sizes of the ferromagnetic fluctuations and drops in manganites.     

High-frequency EPR of Cr<Superscript>2+</Superscript> ions in CdGa<Subscript>2</Subscript>S<Subscript>4</Subscript>

High-frequency broad-band (65–240 GHz) EPR is used to study impurity centers of bivalent chromium in a CdGa₂S₄ crystal. It is found that the EPR spectra correspond to tetragonal symmetry. The spin Hamiltonian H = βB · g · S + B ₂ ⁰ O ₂ ⁰ + B ₄ ⁰ O ₄ ⁰ + B ₄ ⁴ O ₄ ⁴ with the parameters B ₂ ⁰ =23659±2 MHz, B ₄ ⁰ =1.9±1 MHz, |B ₄ ⁴ |=54.2±2 MHz, g_‖=1.93±0.02, and g_⊥=1.99±0.02 is used to describe the observed spectra. It is concluded that chromium ions occupy one of the tetrahedrally coordinated cation positions.     

Crystallographic characteristics and phase transitions in the [N(C<Subscript>2</Subscript>H<Subscript>5</Subscript>)<Subscript>4</Subscript>]<Subscript>2</Subscript>CdBr<Subscript>4</Subscript> crystal in the low-temperature range

The results of x-ray structural studies of the [N(C₂H₅)₄]₂CdBr₄ crystal at low temperatures are presented. The unit cell parameters and the thermal expansion coefficients along the main crystallographic directions are measured at temperatures in the range from 90 to 320 K. The integrated intensities of the diffraction reflections are investigated as a function of the temperature. It is shown that the curves a = f(T), c = f(T), I ₅₀₀ = f(T), and I ₀₀₆ = f(T) at temperatures T ₁ ≈ 174 K and T ₂ ≈ 226 K exhibit anomalies in the form of abrupt changes in the lattice parameters and the diffraction reflection intensities. This indicates that the [N(C₂H₅)₄]₂CdBr₄ crystal undergo phase transitions at these temperatures. Moreover, there is an anomaly in the form of a small maximum at the temperature T ₃ = 293 K.     

Comparative study of solid-state reaction and sol-gel process for synthesis of Zr-doped Li<Subscript>0.5</Subscript>La<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript> solid electrolytes

We investigated the synergistic influences of synthesis methods (solid-state reaction vs. sol-gel process) and Zr⁴⁺ doping on the structure and ionic conductivity of perovskite-structured Li_0.5La_0.5TiO₃ (LLTO) solid electrolytes. The lithium-ion conductivity of Li_0.5La_0.5Ti_1???x Zr _x O₃ ceramic specimens was evaluated as a function of x value and compared carefully between those two synthesis methods. Regarding the conductivity, sol-gel process is better for the synthesis of LLTO than solid-state reaction. As a result, the highest grain conductivity is obtained in the sol-gel-derived pure LLTO sample with x?=?0, reaching 1.10?×?10^?3 S?·?cm^?1. Partial substitution of Zr⁴⁺ enlarges the LLTO’s grain aggregate size and increases the total superficial area of aggregates. Consequently, Zr⁴⁺ substitution not only affects the grain (bulk) conductivity, but more importantly, also improves the grain boundary conductivity and the total conductivity. The highest total conductivity is 5.84?×?10^?5 S?·?cm^?1 with x?=?0.04 by sol-gel process.     

Nonergodic state of relaxation ferroelectric Cd<Subscript>2</Subscript>Nb<Subscript>2</Subscript>O<Subscript>7</Subscript> in a constant electric field

The temperature dependence of the residual polarization of the nonergodic relaxation state (NERS) obtained from the measurements of pyroelectric current during zero-field heating (ZFH) in the temperature interval from 10 to 295 K is investigated for the Cd₂Nb₂O₇ relaxation system in two cases: (1) after sample cooling in a constant electric field E (FC) from T = 295 K to a preset temperature, which is much lower than the “freezing” temperature of the relaxation state (T _f ≈ 182 K), field removal, and subsequent cooling in zero field (ZFC) to T = 10 K and (2) after ZFC from T = 295 K to the same temperature below T _f , application of the same field, and FC to T = 10 K. The behavior of the P _r ^FC (T) and P _r ^ZFC (T) dependences is analyzed. In the field E < 2 kV/cm, the P _r ^ZFC curves as functions of 1/T have a broad low-intensity peak in the region T ≈ T _f , which vanishes in stronger fields, when the P _r ^FC (1/T) curves intersect at T ≈ T _f and have no anomalies. The difference in the behavior of P _r ^ZFC (T) and P _r ^FC (T) indicates the difference in the nature of NERS formed during ZFC and FC of the system upon a transition through T _f . In the ZFC mode, NERS exhibits glasslike behavior; in the FC regime, features of the ferroelectric behavior even in the weak field. Analogous variations of P _r ^ZFC (T) and P _r ^FC (T) in a classical ferroelectric KDP are also given for comparison.     

Absorption spectra of some radiation-doped A<Subscript>3</Subscript>B<Subscript>5</Subscript> compounds

Temperature dependences of the absorption coefficient in A₃B₅ crystals before and after irradiation by electrons with an energy of 6 MeV and a dose of Ф = 2 × 10¹⁷ electron/cm² are studied. A low-lying E_v + 0.4 eV center of a nonimpurity origin is found in both undoped GaAs crystals and those doped with various impurities (Te, Zn, Sn, Ga_1–xIn_xAs, InP, and InP〈Fe〉).     

Formation of lithium-like boron and nitrogen ions in the <Superscript>4</Superscript><Emphasis Type="Italic">P</Emphasis><Subscript>5/2</Subscript> state in gaseous media

We experimentally determined the fraction of α_v of lithium-like boron B²⁺ and nitrogen N⁴⁺ ions in the ⁴ P _5/2 state having a velocity of 3.6 au that are formed upon capture of two (α₂) electrons by hydrogen-like B⁴⁺ and N⁶⁺ ions and upon capture of one (α₁) electron by helium-like (1s2s)^1,3 S metastable B³⁺ and N⁵⁺ ions in gaseous media (H₂, He, N₂, Ar), as well as upon passage through a celluloid film. In light-element media (H₂, He), α₂ increases proportional to the target thickness T _g and reaches a maximum at T _g ≈ 10¹⁶ atom/cm² (for B ions, α₂ ≈ 0.2 in H₂ and α₂ ≈ 0.4 in He). For boron and nitrogen ions passing through thin layers of heavier gases (N₂, Ne), α₂ depends considerably more weakly on T _g , and, in Ar, becomes practically constant. It is assumed that, since hydrogen and helium do not contain electrons with parallel spins, autoionizing lithium-like ions are formed as a result of successive (one by one) capture of electrons, whereas, in the heavier gases, simultaneous capture of two electrons predominates. At T _g ～ 10¹⁵ atom/cm², the fraction α₁ of boron ions is the highest in He, ～0.15, and the lowest in Ar, ～0.07, being in qualitative agreement with calculations.     

Physical properties of FeSe<Subscript>0.5</Subscript>Te<Subscript>0.5</Subscript> single crystals grown under different conditions

We report on structural, magnetic, conductivity, and thermodynamic studies of FeSe_0.5Te_0.5 single crystals grown by self-flux and Bridgman methods. The lowest values of the susceptibility in thenormal state, the highest transition temperature T _c of 14.4 K, and the largest heat-capacity anomaly at T _c were obtained for pure (oxygen-free) samples. The criticalcurrent density j _c of 8.6 × 10⁴A/cm² (at 2 K) achieved in pure samples is attributed to intrinsic inhomogeneity due to disorder at the anion sites. The samples containing an impurity phase of Fe₃O₄ show increased j _c up to2.3 × 10⁵A/cm² due to additional pinning centers. The upper critical field\(H_{c2}\)of ~500 kOe is estimated from the resistivity studyin magnetic fields parallel to the c-axis using a criterion of a 50%drop of the normal state resistivity R _n . The anisotropy ofthe upper critical fieldγ _{H c2} =H ^ab _c2/H _c2 ^c reaches a value ~6 at\(T\longrightarrow T_c\). Extremely low values of the residualSommerfeld coefficient \(\gamma_r\) of about 1 mJ/mol K²,compared to the normal state Sommerfeld coefficient γ _n = 25mJ/mol K² for pure samples indicate a high volume fraction of thesuperconducting phase (up to 97%). The electronic contribution to the specific heat in thesuperconducting state is well described within a single-band BCS model with a temperature dependent gapΔ(0 K) = 27(1) K. A broad cusp-like anomaly in the electronic specific heat observed at low temperatures in samples with suppressed bulk superconductivity is ascribed to a splitting of the ground state of the Fe²⁺ ions at the 2c sites. This contribution is fully suppressed in the ordered state in samples with bulk superconductivity.     

Study of the heavy-fermion compound CeRu<Subscript>2</Subscript>Si<Subscript>2</Subscript> by the small-angle neutron scattering method

In order to directly observe neutron scattering by heavy fermion quasiparticles at low temperatures, a CeRu₂Si₂ single crystal has been studied by the small-angle neutron scattering method. In the experiment, neutron scattering is observed at T = 0.85 K for momentum transfers q ≤ 0.04 Å^?1, which is treated as the orbital component of magnetic scattering by heavy fermion quasiparticles. It has been found that the application of a magnetic field H = 1 T leads to both an increase in the observed scattering and its anisotropy with respect to the field direction. Moreover, measurements in the magnetic field reveal additional scattering for q > 0.04 Å^?1, which is well described by a Lorentzian and is interpreted as neutron magnetic scattering by spin-density fluctuations with a correlation radius R_c ≈ 30 Å.     

Surface superconductivity and<Emphasis Type="Italic">H</Emphasis><Subscript><Emphasis Type="Italic">c3</Emphasis></Subscript> in UPt<Subscript>3</Subscript>

Ginzburg-Landau (GL) theory is used to study surface superconductivity for UPt₃ for various order parameter symmetries (OPS), andH _c3 is found for all principal directions of the surface normal\(\hat n\) and the field [1]. Assuming specular reflection, and allowing for reorientation of the antiferromagnetic symmetry breaking field in the models withE _1g ,E _2g ,E _1u , orE _2u symmetry, the experiments of Keller et al. [2] with\(\hat n = \hat a\) can be qualitatively explained for all OPS except possiblyA _1u ⊕B _1u . The implied GL parameters then predict qualitatively different and OPS dependent behavior for\(\hat n = \hat a^* \) and\(\hat n = \hat c\). Study ofH _c3 for these surfaces would give strong clues about the OPS of UPt₃.     

Peculiarities of magnetic,galvanomagnetic, elastic,and magnetoelastic properties of Eu<Subscript>0.55</Subscript>Sr<Subscript>0.45</Subscript>MnO<Subscript>3</Subscript>

Magnetic, elastic, magnetoelastic, transport, and magnetotransport properties of the Eu_0.55Sr_0.45MnO₃ ceramics have been studied. A break was detected in the temperature dependence of electrical resistivity ρ(T) near the temperature of the magnetic phase transformation (41 K), with the material remaining an insulator down to the lowest measurement temperature reached (ρ=10⁶ Ω cm at 4.2 K). In the interval 4.2≤T≤50 K, the isotherms of the magnetization, volume magnetostriction, and ρ were observed to undergo jumps at the critical field H_C1, which decreases with increasing T. For 50≤T≤120 K, the jumps in the above curves persist, but the pattern of the curves changes and H_C1 grows with increasing T. The magnetoresistance Δρ/ρ = (ρ _H ?ρ_H=0)/ρ _H is positive for H<H_C1 and passes through a maximum at 41 K, where Δρ/ρ = 6%. For H>H_C1, the magnetoresistance is negative, passes through a minimum near 41 K, and reaches a colossal value of 3×10⁵ % at H=45 kOe. The volume magnetostriction is negative and attains a giant value of 4.5×10^?4atH=45 kOe. The observed properties are assigned to the existence of three phases in Eu_0.55Sr_0.45MnO₃, namely, a ferromagnetic (FM) phase, in which carriers are concentrated because of the gain in s-d exchange energy, and two antiferromagnetic (AFM) phases of the A and CE types. Their fractional volumes at low temperatures were estimated to be as follows: ～3% of the sample volume is occupied by the FM phase; ～67%, by the CE-type AFM phase; and ～30%, by the A-type AFM phase.     

Thermopower in the region of hopping conduction in TlNiS<Subscript>2</Subscript>

Samples of the composition TlNiS₂ in the hexagonal system with the unit cell parameters a=12.28 Å, c=19.32 Å, and ρ=6.90 g/cm³ are synthesized. The results of the investigation into the electrical and thermoelectrical properties of TlNiS₂ samples in the temperature range 80–300 K indicate that TlNiS₂ is a p-type semiconductor. It is found that, at temperatures ranging from 110 to 240 K, TlNiS₂ samples in a dc electric field possess variable-range-hopping conduction at the states localized in the vicinity of the Fermi level. The density of localized states near the Fermi level is determined to be N_F=9×10²⁰ eV^?1 cm^?3, and the scatter of the states is estimated as J≈2×10^?2 eV. In the temperature range 80–110 K, TlNiS₂ exhibits activationless hopping conduction. At low temperatures (80–240 K), the thermopower of TlNiS₂ is adequately described by the relationship α(T)=A+BT, which is characteristic of the hopping mechanism of charge transfer. In the case when the temperature increases to the temperature of the onset of intrinsic conduction with the activation energy ΔE=1.0 eV, there arise majority intrinsic charge carriers of both signs. This leads to an increase in the electrical conductivity σ and, at the same time, to a drastic decrease in the thermopower α; in this case, the thermopower is virtually independent of the temperature.     

Raman scattering spectroscopy of inclusions of carbon in Al<Subscript>2</Subscript>O<Subscript>3</Subscript> films and its solid solutions with HfO<Subscript>2</Subscript>

We apply Raman scattering spectroscopy to study the nature of carbon inclusions in Al₂O₃ and (HfO₂) _x (Al₂O₃)_{1 ? x} films deposited using volatile complex compounds. Raman spectra of the films under investigation contain D and G vibrational modes, which indicate that carbon clusters of the sp ² configuration tend to form in the films. We estimate the size of clusters from the integrated intensity ratio I _D /I _G and find it to be in the range of 14–20 Å. The content of hydrogen in carbon clusters is calculated from the height of the photoluminescence pedestal and is found to vary from 14 to 30 at % depending on the regime of the film’s synthesis.