Differential magnetoreflection spectroscopy of doped and undoped II–VI semiconductor quantum wells

A method has been developed for recording and analyzing the differential magnetoreflection (magnetotransmission) spectra of semiconductor structures with quantum wells. The method was used to determine the exciton g-factor in semimagnetic CdTe/(Cd, Mn)Te heterostructures with quantum wells. In nonmagnetic structures with quantum wells containing a two-dimensional electron gas, the excitonic damping depends on the spin state of the exciton. This effect is explained by the exchange contribution to exciton-electron scattering. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 1, 44–49 (10 January 1997)     

Properties of strontium titanate in the SrTiO3/CeO2/Al2O3 multilayered structure

Studies of the crystal structure, elemental composition, and dielectric properties of strontium titanate films in SrTiO₃/CeO₂/Al₂O₃ multilayered structures are reported. Data on the crystal lattice and impurity contents have been obtained, and temperature and electric field dependences of the dielectric properties of SrTiO₃ films in the microwave range have been measured. An analysis of the results is made to establish the reason for the nonmonotonic dependence of the small-signal dielectric permittivity of SrTiO₃ films on temperature. Fiz. Tverd. Tela (St. Petersburg) 39, 1024–1029 (June 1997)     

Calculation of the dielectric permittivity tensor for the surface layer of a cubic crystal

The dielectric permittivity tensor has been calculated by the effective-field method with inclusion of spatial inhomogeneities in the crystal surface layer. Cubic crystals have been shown to have natural optical activity within a layer a few lattice constants thick. Fiz. Tverd. Tela (St. Petersburg) 40, 645–647 (April 1998)     

Dielectric relaxation in deuterated triglycine sulfate crystals

A study has been made of the slow relaxation of the dielectric permittivity of deuterated triglycine sulfate (DTGS) initiated by application of a dc electric field. The field and temperature dependences of the relaxation time associated with domain-wall motion were obtained. The effect of the internal electric field on relaxation processes is seen in different behavior of the field and temperature dependences under different orientations of the external field. The existence in DTGS crystals of two temperature regions of domain-structure rearrangement lying 7–8 and 15–18 °C below the Curie point has been established. Fiz. Tverd. Tela (St. Petersburg) 40, 1542–1545 (August 1998)     

Mechanisms of dielectric polarization in perovskite ceramics of the relaxor ferroelectrics (1 ? x)(NaBi)1/2TiO3?x Bi(ZnTi)1/2O3 (x < 0.2)

This paper reports on the results of the investigation into the dielectric properties of perovskite ceramics of the relaxor ferroelectrics (1 ? x)(NaBi)_1/2TiO_3?x Bi(ZnTi)_1/2O₃ (x < 0.2) with the use of the impedance spectra measured in the frequency range from 25 to 106 Hz at temperatures from 100 to 1000 K. It has been found that the temperature dependence of the real part of the permittivity is characterized by a maximum at a temperature T?? _m (590?C610 K). It has been shown that, in the temperature region of the existence of the relaxor state (T < T?? _m ), the permittivity ? is determined by the sum of the contributions from the matrix and dipole clusters. The temperature dependence of the contribution from the clusters, which is determined by the kinetics of their formation and freezing, is characterized by a curve with a maximum. It has been revealed that, in the temperature range T > T?? _m , there are two mechanisms of polarization. One mechanism is associated with the thermal hopping motion of charges, whereas the other mechanism provides an induction-type response (system with a negative capacitance). The latter makes a negative contribution to the real part of the permittivity ? and a positive contribution to the imaginary part of the permittivity. A quantitative analysis of the experimental data has been carried out with the use of an equivalent circuit that includes a constant-phase element of the induction type.     

Proprietes electriques du chlorure d'argent monocristallin et charge d'espace

Very high dielectric permittivity and polarisation in AgCl crystals are observed in d.c. and very low frequencies (from 10^?4 Hz to 100 KHz) with different electrodes (silver painting and solid chrome). The potential distribution is also studied with vibrating wire method.Near 100°C and for frequencies below 1 Hz, non-linear phenomenon appear for a.c. voltages greater than 0,1 V. When a.d.c. voltage is superposed, we observe three kinds of behaviour: for low voltages and low frequencies, adsorption predominates; for some volts, space charge appears and beyond surface states produce high permittivity.Shape of potential distribution and dielectric permittivity can be explained by space charge polarisation, adsorption of Ag⁺ ions at the electrodes and filling of surface states.     

Anomalous behavior of dielectric permittivity of Li2Ge7O15 crystals at a phase transition

It is shown that the Curie-Weiss relation describes unsatisfactorily the temperature dependence of dielectric permittivity at the transition from orthorhombic paraphase to polar phase. Fiz. Tverd. Tela (St. Petersburg) 40, 1698–1700 (September 1998)     

Dielectric relaxation in the weak ferroelectric Li2Ge7O15 near the ferroelectric phase transition

The dielectric permittivity of Ni-doped Li₂Ge₇O₁₅ crystals was studied in the vicinity of the ferroelectric phase transition. Introduction of Ni has been shown to suppress the dielectric anomaly and to reduce substantially the transition temperature. A temperature hysteresis in ɛ (T) has been observed in nominally pure and Ni-doped Li₂Ge₇O₁₅ crystals near the transition point. Measurements performed under cooling from the paraphase reveal dispersion of dielectric permittivity at Debye relaxation frequencies of the order of 10⁴–10⁵ Hz at T _c . It is proposed that the hysteresis phenomena and the low-frequency dispersion are caused by residual defects (of the type of random local fields), which become polarized in the ferroelectric phase and become disordered above T _c . Fiz. Tverd. Tela (St. Petersburg) 40, 2198–2201 (December 1998)     

Investigations on the soft-mode mechanism of the ferroelectric phase transition in

Dielectric and Raman spectroscopic measurements have been performed to investigate the ferroelectric phase transition in . Single crystals were grown by the zone melting method. The frequency dependence of the dielectric permittivity from 1 MHz to 1 GHz has been studied in a temperature range between 265 and 285 K. A Debye like dielectric dispersion was found, showing a critical slowing down around K. Polarized Raman spectra have been taken between 220 and 310 K. Two softening modes have been found, one of A- and another one of B / B g-symmetry. The phase transition mechanism in can be classified as partially order-disorder and partially displacive, confirming former structural results. It resembles strongly that of monoclinic . Received: 7 April 1998 / Revised: 5 June 1998 / Accepted: 16 June 1998     

The trion as an exciton interacting with a carrier

The X⁻ trion is essentially an electron bound to an exciton. However, due to the composite nature of the exciton, there is no way to write an exciton-electron interaction potential. We can overcome this difficulty by using a commutation technique similar to the one we introduced for excitons interacting with excitons, which allows to take exactly into account the close-to-boson character of the excitons. From it, we can obtain the X⁻ trion creation operator in terms of excitons and electrons. We can also derive the X⁻ trion ladder diagram between an exciton and an electron. These are the basic tools for future works on many-body effects involving trions.     

L-α-alanine doped TGS under hydrostatic pressure

Abstract

A phenomenological model describing spontaneous polarization, pyroelectric, pressure-electric properties and dielectric permittivity of pure and 1-α-alanine doped TGS crystals is presented. Conclusions resulting from the model is illustrated by experimental data. Basic parameters of pressure-electric detectors and transducers made of doped or irradiated ferroelectric crystals can be estimated from the data determined for respective pure crystals.     

Effect of conductivity on the dielectric characteristics of cyano-ethyl ester of poly(vinyl alcohol)

Frequency dependences of the real and imaginary parts of the dielectric permittivity of films prepared from cyano-ethyl ester of poly(vinyl alcohol) have been studied within a frequency range of 25 Hz to 1 MHz at temperatures from 266 to 323 K. The frequency dependence of the total conductivity of the polymer dielectric has been calculated. At T < T _g , it has been established to follow a power law course with an exponent close to unity, which evidences hopping pattern of the conductivity. The anomalous increase of the dielectric losses and dielectric permittivity in the low-frequency range at T ≥ T _g is attributed to formation of double electric layers at the electrode-polymer boundary.     

Effects of CNT inclusions on structure and dielectric properties of PVDF/CNT nanocomposites

ABSTRACT

The effects of multiwall carbon nanotube (CNT) inclusions on the crystalline structure of poly(vinylidene fluoride) (PVDF), and on the dielectric properties of PVDF/CNT nanocomposites (NCs), prepared by melt mixing, were investigated by employing X-ray diffraction, differential scanning calorimetry, and dielectric spectroscopy techniques. Our results imply that, in the NCs, the formation of β-phase crystals depends on specific compression treatment in the melt and fast cooling. Dielectric measurements on NCs, with CNT concentrations below the electrical percolation threshold, reveal that the dielectric strength of the two relaxation processes in the amorphous phase and dielectric permittivity, ?′, measured within the broad temperature range from ?150 °C to 60 °C, increase strongly with increasing CNT concentration. This enhancement of amorphous PVDF polarizability has been attributed to the increase of the local electric field, due to local polarization generated at the surface of conductive inclusions/CNT clusters.     

Magneto-optical phenomena in MnAs/CaF2/Si(111) epitaxial films in a transverse magnetic field

Field and angular dependences of the rotation of the plane of polarization in a transverse magnetic field H⊥k under normal reflection of light (λ=633 nm) have been studied in MnAs ferromagnetic epitaxial films grown by MBE on CaF₂/Si(111) substrates. The angle of rotation of the plane of polarization a is shown to be determined by contributions even and odd in the magnetization M. The odd contribution is associated with the deviation of the easy plane of magnetic anisotropy from the film plane, which originates from misorientation of the Si surface from the (111) plane, or from a presence of small regions of ( )-oriented MnAs. The even contribution is due to the optical anisotropy of films connected with quadratic-in-M terms in the dielectric permittivity tensor ɛ _ij of manganese arsenide. A method based on measuring the angular dependences of a in a rotating magnetic field is proposed to separate these contributions. Fiz. Tverd. Tela (St. Petersburg) 41, 110–115 (January 1999)     

Dielectric relaxation and magnetic field dependent alternating current conductivity of nanocrystalline cadmium-zinc ferrite below room temperature

The dielectric permittivity of nanocrystalline cadmium-zinc ferrite prepared by the ball milling method has been investigated within a temperature range 77≤T≤300 K in presence of a magnetic field up to 1 T and in the frequency range 20 Hz-1 MHz. The dielectric permittivity follows the power law ε^/(f)∝Tⁿ where the temperature exponent ‘n’ is found to be frequency dependent. The dielectric properties of the samples have been analyzed in terms of electric modulus vector. The dielectric relaxation has been explained by interfacial polarization. The variation of the relaxation time with temperature indicates the presence of two different activation energies. The ac magnetoconductivity is positive for the milled sample and becomes negative for the unmilled sample. This behavior can be explained in terms of grain and grain boundary contribution to impedance of the samples.     

A study of the microwave dielectric permittivity of liquid crystals in electric and magnetic fields

A microwave detector based on a self-sustained oscillator circuit is proposed as a means to investigate the real and imaginary components of the dielectric permittivity of liquid crystals in external electric and magnetic fields. Results are given for measurements of a 500 MHz oscillator frequency for two types of nematic crystals, 5CBP and MBBA. Fundamental regularities are identified in the behavior of the microwave dielectric permittivity of samples in electric and magnetic fields. It is shown that the minimum of the high-frequency dielectric loss in liquid crystals correspond to a situation in which the long axes of the molecules are oriented parallel to the direction of the microwave electric field. Zh. Tekh. Fiz. 68, 117–121 (January 1998)     

A comparison of the effectiveness of GaAs surface passivation with sodium and ammonium sulfide solutions

To explore the possibility of improving the effectiveness of chemical and electronic passivation, a study has been made of the properties of GaAs surface treated with solutions of inorganic sulfides [Na₂S and (NH₄)₂S] in various amphiprotic solvents (water, alcohols). X-ray photoelectron and photoluminescence spectroscopy shows that the efficiency of both chemical and of electronic passivation of GaAs surface increases with decreasing dielectric permittivity of the solvent. The degree of this increase reached with solutions of the sulfide of a strong base (Na₂S) is larger than that of a weak-base sulfide [(NH₄)₂S]. Fiz. Tverd. Tela (St. Petersburg) 39, 63–66 (January 1997)     

Dielectric properties and phase transition of zinc tris(thiourea) sulfate single crystal

The dielectric properties and the ferroelectric to paraelectric phase transition of zinc tris(thiourea) sulfate (ZTS) single crystal have been investigated in a wide range of temperatures and frequencies. In the lower frequency region the real part of dielectric permittivity of the ZTS crystal shows a sudden increase at 323 K. Prominent first-order ferroelectric to paraelectric phase transition at 323 K has been observed in the plot of dielectric permittivity versus temperature at different frequencies. It has been observed that the phase transition occurs in ZTS crystal with a low degree of disorder. Surprisingly, it has been observed for ZTS that the value of the dielectric permittivity is only about 10 at high frequencies and is found to increase to 50 at low frequencies. Dielectric loss has higher values in the paraelectric region.     

Increasing the sensitivity of resistive and capacitive external-action sensors

The contribution from the relaxation process to the permittivity of a dielectric at high frequencies is shown to depend on the square of the total contribution from this process to the conductivity. The contribution from the relaxation process to the conductivity of a dielectric at low frequencies depends on the square of the total contribution from the relaxation process to the real part of the dielectric permittivity. On this basis, we suggest a method for increasing the sensitivity of resistive and capacitive external-action sensors.     

Effect of organic dyes on the dielectric properties of KH<Subscript>2</Subscript>PO<Subscript>4</Subscript> crystals

The effect of organic dyes on the dielectric properties of KH₂PO₄ (KDP) crystals is studied over a wide range of temperatures. The dielectric properties of KDP crystals doped with molecules of the Chicago Sky Blue and Amaranth organic dyes are investigated for the first time. The dye molecules can be incorporated into the crystal lattice of KDP and selectively paint the pyramidal growth sectors of the crystal. The influence of dye organic impurities on the domain contribution to the permittivity is analyzed with due regard for the sectoral crystal structure. It is demonstrated that, upon doping of KDP crystals with organic dyes, the blocking effect of background impurities on domain walls is substantially weakened in the prismatic growth sector of the crystal in the polar phase. This leads to a noticeable change in the dielectric properties, specifically to an increase in the domain contribution to the permittivity of the crystal.